JPS6139293A - Magnetic bubble memory element and its manufacture - Google Patents

Abstract

PURPOSE:To enhance a driving force of a bubble without decreasing a bubble detecting force of a detector by forming a soft magnetic material pattern with different thickness. CONSTITUTION:A soft magnetic material pattern 8 is formed by the first and second soft magnetic material layers 5 and 7 and its thicknss is thick (3,000Angstrom + 1,000Angstrom =4,000Angstrom and a soft magnetic pattern 9 is formed by the first magnetic material layer 5 only and its thickness is thin (3,000Angstrom ). Consequently, the soft magnetic pattern with different film thickness is formed on the same element, and the thick soft magnetic material is used for a minor part of an information memory and the thin soft magnetic material is used for a detector. Thus, a bubble driving force can be enhanced without decreasing bubble detection.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic bubble memory element used as a storage device for electronic computing devices and the like, and a method for manufacturing the same.

Magnetic bubble memory devices that utilize magnetic bubbles have many features such as non-volatility, high storage density, and low power consumption.Furthermore, because they are solid-state devices that do not contain any mechanical elements, they have extremely high reliability. It is used as large capacity memory.

[Problems to be solved by conventional technology and invention]

Such magnetic bubble memory is also required to have an increased amount of information and miniaturization of devices, and as the memory capacity becomes higher density, the size of the soft magnetic material pattern for bubble transfer becomes smaller, and the driving force of the bubble becomes smaller. There is a problem with weakening. As a countermeasure for this, there is a method of increasing the film thickness of the soft magnetic material pattern, and a dual spacer method of reducing the spacer (the distance between the crystal surface and the soft magnetic material pattern) only in the portion where the driving force is weak. However, the former method of increasing the film thickness has the disadvantage that the resistance value of the detector that detects bubbles using the magnetoresistive effect 1 becomes low and the bubble detection output becomes small, and the latter dual spacer method is difficult to manufacture. It has the disadvantage of being ugly.

[Means for solving problems]

The present invention provides a magnetic bubble memory element that solves the above-mentioned problems and a method for manufacturing the same. The soft magnetic material pattern is formed by a magnetic bubble memory element characterized in that a plurality of types of patterns having different film thicknesses are provided.

In addition, a first soft magnetic layer is formed on the bubble crystal via a spacer, followed by a nonmagnetic layer, and a second soft magnetic layer is formed on top of the nonmagnetic layer.
By a method of manufacturing a magnetic bubble memory element, the second soft magnetic layer is partially etched and removed after forming a second soft magnetic layer, and then the entire soft magnetic material pattern is formed. It will be done.

[Effect]

The magnetic bubble memory element and its manufacturing method include forming two soft magnetic layers with a non-magnetic layer in between, etching away the upper soft magnetic layer only in the area that will become the detector, and then etching the entire soft magnetic layer. By forming soft magnetic patterns to obtain soft magnetic patterns with different thicknesses, it is possible to increase the bubble driving force without reducing the bubble detection ability and realize a bubble memory element with high density capacity.

〔Example〕

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram for explaining the magnetic bubble memory element and its manufacturing method according to the present invention, and alpha to f are cross-sectional views showing the manufacturing process. In the figure, 1 is a bubble crystal, 2 is a spacer, 3 is a conductor pattern, 4 is a POIIS (polyladder organosiloxane) resin layer,
Reference numeral 5 indicates a first soft magnetic layer, 6 indicates an 8102 layer, 7 indicates a second soft magnetic layer, 8.9 indicates a soft magnetic material pattern, and 10 indicates a film, a film, and a film, respectively.

To explain this example with the drawings, first, as shown in the figure α, 5102 is sputtered on the bubble crystal 1 to form the spacer 2 (thickness 500A), and then TaMo/Au/Ta
Mo (thickness 150A/3300A/1ook) is electron beam deposited and then patterned to form a conductor pattern 3. Next, as shown in figure h, apply Si-based POLS and heat cure it at 350C to form the Poll5 resin layer 4 (thickness 2
50OA). Next, as shown in FIG.
Then, 51o2I layer 6 (thickness 300A) and second soft S material layer 7 (thickness 1[+00A
) is sequentially electron-beam evaporated. Next, mask with photoresist as shown in figure d, and only the detector part is exposed to the second mask.
etching the soft magnetic layer. In this case, use the etching solution as HIJO3-? If you use eOLJ etching solution, 8
Since the 102nd layer 6 remains without being etched, the soft magnetic material Jf15 is intact. Next, as shown in figure #, a photoresist (Al-microposit, thickness about 700K) is applied, and after exposure and development, soft magnetic patterns 8 and 9 are formed by ion milling.

In this case, the 5102 layer 6 is etched. then 1
As shown in the figure, a magnetic bubble memory element of the present invention is obtained by applying and curing POLS resin to form a permeable film 10 (thickness: 1 μm).

According to this embodiment, as shown in FIG.
=4oooX), the soft magnetic pattern 9 is formed only from the first soft magnetic integral layer 5, and its thickness is thin <(30D
OA). Therefore, soft magnetic patterns with different film thicknesses are formed on the same element, and if the thicker one is used for the minor part of information storage and the thinner one is used for the detector, it is possible to drive bubbles without reducing the bubble detection ability. You can increase your power.

The above embodiment has an intermediate layer 6r between the two soft magnetic layers 5 and 7.
However, magnetic bubble memory elements having soft magnetic material patterns of different thicknesses can be manufactured without providing this intermediate layer. FIG. 2 is a diagram for explaining the manufacturing method.

In this figure, the same parts as in FIG. 1 are designated by the same reference numerals.

The difference between this example and the previous example is that the steps shown in Figures 0 and D are different, and the rest are the same.
) is electron beam evaporated to a thickness of 40 [110 Å], then masked with photoresist as shown in Figure d, and only the detector portion of the soft magnetic layer 5' is removed by ion milling to a thickness of 100 Å. By carrying out the steps shown below and in FIG. 1, a magnetic bubble memory element having soft magnetic patterns 8 and 9 of different thicknesses is obtained. Note that the effects of this embodiment are similar to those of the previous embodiment.

〔Effect of the invention〕

As described above, according to the present invention, by forming soft magnetic patterns having different thicknesses, the bubble driving force can be increased without reducing the bubble detection ability of the detector. Further, according to the present invention, the above-described magnetic bubble memory element can be easily manufactured.

[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining one embodiment of the magnetic bubble memory element of the present invention and its manufacturing method, and FIG. 2 is a diagram for explaining another embodiment of the present invention. 2 is a bubble crystal, 2 is a spacer, 3 is a conductor pattern, 4 is Pox, s@ fat layer, 5 is a first soft magnetic layer, 6 is a 51o2 layer, 7 is a second soft magnetic layer, 8. 9
10 indicates a magnetic free material pattern, and 10 indicates a paddock film. Figure 1 - Figure 2

Claims (1)

[Claims] 1. In a magnetic bubble memory element in which a bubble transfer path is provided with a soft magnetic material pattern on a bubble crystal, the soft magnetic material pattern is provided with a plurality of types of patterns having different film thicknesses. A magnetic bubble memory element characterized by: 2. The soft magnetic material pattern includes a pattern formed from the first soft magnetic material layer and a SiO material layer formed on the first soft magnetic material layer.
2. The magnetic bubble memory element according to claim 1, wherein the magnetic bubble memory element has a pattern formed from a second soft magnetic layer formed through a nonmagnetic layer such as CrO_3. 3. Form a first soft magnetic layer on the bubble crystal via a spacer, then form a nonmagnetic layer, and then form a second soft magnetic layer on top of the nonmagnetic layer.
1. A method for manufacturing a magnetic bubble memory element, comprising: forming a second soft magnetic layer, etching a part of the second soft magnetic layer, and then forming an entire soft magnetic pattern.