JPS606893B2 - Compound having hexagonal layered structure represented by LuGaCuO↓4 and method for producing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel compound LUGaCu04 having a hexagonal layered structure and a method for producing the same.

Conventionally, a compound having a hexagonal layered structure represented by YFe204 was synthesized by the present applicant, and its existence is already known.

In this compound, the divalent and trivalent ions of iron are surrounded by five-coordinated oxygen ions, and the yttrium (Y) is
It is a compound that has coordinating oxygen ions around it and is magnetic. The present invention provides the above-mentioned Y30Fe2
10 Fe3 042 - Compound Y3 0 substitute also Lu3
10. To provide a novel compound in which Cu20 is substituted for Fe20 and Ga30 is substituted for Fe30, and a method for producing the same.

In the compound represented by LUGaCu04 of the present invention, lutetium is Lu30 ion, gallium is Ga
30, copper exists as 0 C, Lu30 Ga3
Ten C can be expressed as ten O42-.

This crystal has a hexagonal layered structure as shown in FIG. The largest circle indicates oxygen, the middle circle indicates lutetium, and the smallest black circle indicates gallium and copper. Gallium and copper are randomly distributed. The divalent ions of Cu and the trivalent ions of Ga are surrounded by five-coordinated oxygen ions. Crystallographically, they occupy the same position. Also, Lu' has hexa-coordinated oxygen around it. Oxygen, an anion, has a delicate structure. s, t and u indicate positions within the unit cell. The plane index (hkl) of this crystal,
Surface spacing (d(A)) [do is actually measured, dc is calculated value.

], the relative reflection intensity with respect to the x-ray, 1 (%), is as shown in Table 1. LUGaou04 The first table space group is Rim, its crystal habit is plate-like, and its lattice constant is as follows.

ao=3.4412 ±0.0002 (A
) CO=24.283 ±0.003 (
A) This compound is useful as a semiconductor material and a catalyst.

This compound can be produced by the following method.

Lutetium metal (Lu) or lutetium oxide (L&
03) Or a compound that is decomposed into lutetium oxide (Lu203) by heating and metallic gallium,
Alternatively, gallium oxide (Ga203), or a compound that decomposes into gallium oxide (Ga203) when heated, and copper, or oxidized steel (Cu○), or copper oxide (Cu○), which decomposes when heated. The resulting compounds are mixed in such a manner that the atomic ratio of lutetium, gallium, and copper is 1:1:1, and the mixture is heated at a temperature of 700 oo or higher in the air, in an oxidizing atmosphere, or when gallium and copper are each trivalent. It can be produced by heating in a reducing atmosphere that does not reduce the ionic state or the divalent ion state.

Commercially available starting materials used in the present invention may be used as they are, but in order for the chemical reaction between the starting materials to proceed quickly, the particle size should be as small as possible, especially 10 mm or less. is preferred.

Furthermore, when used as an electrical material, contamination with impurities is avoided, so the higher the purity of the starting material, the better.

This raw material is thoroughly mixed as is or with alcohol or acetone. The mixing ratio of these is such that the atomic ratio of lutetium, gallium, and copper is 1:1:1.

If this ratio is exceeded, the target compound cannot be obtained. This mixture is heated at a temperature of 700 oo or more in air or under an oxidizing atmosphere or a reducing atmosphere such that gallium and copper cannot be reduced from their trivalent and divalent ionic states. The heating time is one day or more. There are no restrictions on the rate of temperature increase during heating. After the reaction is completed, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The obtained LuGaCu04
The compound exhibited a black color and was found to have a crystalline structure by powder X-ray diffraction. The crystal structure was found to be the same as that of YFe204 already obtained by the applicant.
Precisely weigh the sample weights of the starting mixed sample and reaction product,
The stoichiometric number of the obtained sample was determined. Example Lutetium oxide (Lu203) with a purity of 99.9% or more
Powder, gallium oxide (Ga203) with a purity of 99.9% or more
) powder and reagent grade oxidized steel (Cu○) powder in a molar ratio of 1:1:2, add ethyl alcohol in a mortar and mix thoroughly to obtain an average particle size of several French meters. A fine powder was obtained.

The mixture was filled in a platinum rubbo and placed in a box-shaped siliconite furnace set at 102,000 ℃ and heated for 4 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was LuGaCu04, and it was confirmed by powder X-ray diffraction that it was crystallographically the same type as the already reported YFe204. The weight of the sample was precisely weighed before and after heating, and the stoichiometry of the resulting sample was determined. Table 1 shows the crystallographic properties of the samples obtained.

[Brief explanation of drawings]

The drawing is an illustration of the LUGaCuQ crystal of the present invention. The largest circle indicates oxygen, the middle circle indicates lutetium, and the smallest black circle indicates gallium and copper. Mug 1

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by LuGaCuO_4. 2 Lutetium metal (Lu) or lutetium oxide (
Lu_2O_3) or a compound that is decomposed into lutetium oxide (Lu_2O_3) by heating;
Metallic gallium (Ga) or gallium oxide (Ga_2
O_3) or a compound that decomposes into gallium oxide (Ga_2O_3) when heated, and copper (Cu)
Alternatively, copper oxide (CuO) or a compound that is decomposed to produce copper oxide (CuO) when heated,
The atomic ratio of lutetium, gallium, and copper is 1:1:1
Mix it so that it becomes
LuGaCuO characterized by heating in an oxidizing atmosphere or a reducing atmosphere to the extent that gallium and copper are not reduced from their trivalent ion state and divalent ion state, respectively.
A method for producing a compound having a hexagonal layered structure represented by _4.