JPS606895B2 - Compound having hexagonal layered structure represented by YbGaZnO↓4 and method for producing the same - Google Patents
Compound having hexagonal layered structure represented by YbGaZnO↓4 and method for producing the sameInfo
- Publication number
- JPS606895B2 JPS606895B2 JP11833181A JP11833181A JPS606895B2 JP S606895 B2 JPS606895 B2 JP S606895B2 JP 11833181 A JP11833181 A JP 11833181A JP 11833181 A JP11833181 A JP 11833181A JP S606895 B2 JPS606895 B2 JP S606895B2
- Authority
- JP
- Japan
- Prior art keywords
- compound
- gallium
- zinc
- oxide
- ytterbium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
本発明は、新規化合物であるYbGaZn04で示され
る六方晶系の層状構造を有する化合物およびその製造に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel compound YbGaZn04 having a hexagonal layered structure and its production.
従来、YFe204で示される六方晶系の層状構造を有
する化合物は、本出願人らによって合成され、その存在
が既に知られている。Conventionally, a compound having a hexagonal layered structure represented by YFe204 was synthesized by the present applicant, and its existence is already known.
この化合物は、Y3十Fe3十Fe2十042十で示さ
れるように、鉄の2価イオンと3価イオンは、5配位の
酸素イオンによって囲まれ、イットリウム(Y)は、6
配位の酸素イオンをその周わりに持っている化合物であ
り、磁性をもっている。本発明は、前記、Y3十Feが
Fe3十042‐化合物のY3十の代わりに、Yb3十
、Fe2十の代わりにZn2十を、Fe3十の代わりに
Ga3十を置きかえた新規な化合物およびその製造法を
提供するにある。In this compound, the divalent and trivalent ions of iron are surrounded by five-coordinated oxygen ions, and the yttrium (Y) is
It is a compound that has coordinating oxygen ions around it and is magnetic. The present invention provides a novel compound in which Y30 is replaced with Y30, Yb30 is replaced with Y30, Zn20 is replaced with Fe20, and Ga30 is replaced with Fe30 in the Fe30042-compound, and its production. It is in providing the law.
本発明のYbGaZn04で示される化合物は、この化
合物中、イッテルビウムはYb3十イオン、ガリウムは
Ga3十、亜鉛はZ〆十として存在しており、Yが十G
a3寸Zn2十042−として表わすことができる。In the compound represented by YbGaZn04 of the present invention, ytterbium is present as Yb30 ion, gallium is present as Ga30, zinc is present as Z〆0, and Y is present as Yb30 ion.
It can be expressed as a3 size Zn2042-.
この結晶は、第1図に示すように六方晶層状構造を持っ
ている。最大の丸は酸素、中丸はイッテルビウム、最小
の黒丸はガリウムと亜鉛を示しいる。ガリウムと亜鉛は
、ランダムに分布している。亜鉛の2価イオンとガリウ
ムの3価イオンは、5配位の酸素イオンによって囲まれ
ている。結晶学的には同一の位置を占めている。またY
bは6配位の酸素をその周わりに持っている。陰イオン
である酸素は繊密構造をとっている。s,tおよびuは
単位格子内に於ける位置を示す。この結晶の面積数(h
kD、面間隔(d(A))〔doは実測、dcは計算値
を示す。〕、×−線に対する相対反射強度、1(%)は
第1表のとおりである。第1表
空間群はRimであり、その晶癖は板状晶であり、格子
定数は次のとおりである。This crystal has a hexagonal layered structure as shown in FIG. The largest circle indicates oxygen, the middle circle indicates ytterbium, and the smallest black circle indicates gallium and zinc. Gallium and zinc are randomly distributed. The divalent ions of zinc and the trivalent ions of gallium are surrounded by five-coordinated oxygen ions. Crystallographically, they occupy the same position. Also Y
b has 6-coordinated oxygen around it. Oxygen, an anion, has a delicate structure. s, t and u indicate positions within the unit cell. Area number of this crystal (h
kD, surface spacing (d(A)) [do is actually measured, dc is calculated value. ], the relative reflection intensity with respect to the x-ray, 1 (%), is as shown in Table 1. The space group in Table 1 is Rim, its crystal habit is plate-like, and its lattice constant is as follows.
ao=3.4153±0.0005
(A)Co=25.093±0.007
(A〉この化合物は、半導体材料および触媒として
有用なものである。ao=3.4153±0.0005
(A) Co=25.093±0.007
(A) This compound is useful as a semiconductor material and a catalyst.
この化合物は、次の方法によって製造し得られる。This compound can be produced by the following method.
金属イッテルビウム(Yb)あるいは酸化イッテルビウ
ム(YQ03)もしくは「加熱されることによって酸化
イッテルビウム(YQ03)に分解される化合物と金属
ガリウム、あるいは酸化ガリウム(Ga203)もしく
は、加熱されることにより酸化ガリウム(Ga203)
に分解される化合物と亜鉛あるいは酸化亜鉛(Zn○)
もし〈は加熱されることにより分解されて酸化亜鉛(Z
n○)を生ずる化合物とを、イッテルビウム、ガリウム
、亜鉛の割合が原子比で1対1対1になるように混合し
て、120000以上の温度で、大気中「酸化性雰囲気
、あらいはガリウムおよび亜鉛が各々3価イオン状態、
2価イオン状態より還元されない程度の還元雰囲気のも
とで加熱することによって製造することが出来る。Metallic ytterbium (Yb) or ytterbium oxide (YQ03) or a compound that decomposes into ytterbium oxide (YQ03) by heating and metallic gallium, or gallium oxide (Ga203), or gallium oxide (Ga203) by heating
Compounds that are decomposed into zinc or zinc oxide (Zn○)
If < is decomposed by heating and becomes zinc oxide (Z
ytterbium, gallium, and zinc in an atomic ratio of 1 to 1 to 1. Each zinc is in a trivalent ion state,
It can be produced by heating in a reducing atmosphere that does not reduce the divalent ion state.
本発明に用いる出発物質は、市販のものをそのまま使用
してもよいが、出発物質相互間の化学反応を速やかに進
行させるためには、粒径がちいさい程よく、特にloA
m以下であることが好ましい。Commercially available starting materials used in the present invention may be used as they are, but in order to rapidly advance the chemical reaction between the starting materials, the smaller the particle size, the better.
It is preferable that it is below m.
また半導体材料、触媒として用いる場合には不純物の混
入をきらうので、出発原料物質は純度が高いほど好まし
い。Furthermore, when used as a semiconductor material or catalyst, the higher the purity of the starting material, the more preferable it is, since contamination with impurities is to be avoided.
この原料をそのまま、あるいはアルコール類もしくはア
セトンと共に充分に混合する。これらの混合割合は、イ
オテルビウム、ガリウム、亜鉛の割合が原子比として1
対1対1の割合である。This raw material is thoroughly mixed as is or with alcohol or acetone. The mixing ratio of these is such that the ratio of ioterbium, gallium, and zinc is 1 as an atomic ratio.
The ratio is 1:1.
この割合をはずすと目的とする化合物を得ることは出来
ない。この混合物を大気中、あるいは酸化性雰囲気もし
くはガリウムおよび亜鉛が3価イオン状態および2価イ
オン状態から還元され得ない程度の還元雰囲気のもとで
、1200oo以上の温度で加熱する。加熱時間は、1
日もしくはそれ以上である。加熱の際の昇温速度には制
約はない。反応終了後は、0℃に急冷するかあるいは大
気中に急激にひきだせばよい。得られたYoGaZn0
4化合物は、無色を示し、粉末X線回折法によって結晶
構造を有することがわかった。If this ratio is exceeded, the target compound cannot be obtained. This mixture is heated to a temperature of 1200 oo or more in air or under an oxidizing atmosphere or a reducing atmosphere such that gallium and zinc cannot be reduced from their trivalent and divalent ionic states. Heating time is 1
days or more. There are no restrictions on the rate of temperature increase during heating. After the reaction is completed, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The obtained YoGaZn0
The four compounds were colorless and were found to have a crystalline structure by powder X-ray diffraction.
その結晶構造は、既に本出願人が得たYFe204と同
型であることがわかった。出発混合試料と反応生成物の
試料重量を精密に秤量し、得られた試料の化学量論数を
決定した。実施例
純度99.9%以上のイッテルビウム酸化物(YQ03
)粉末、純度99.9%以上の酸化ガリウム(Ga20
3)粉末、および試薬特級の酸化亜鉛(Zn○)粉末を
、モル比で1対1対2の割合に秤量し、浮鉢内でエチル
アルコールを加えて充分に混合し、平均粒軽数仏凧の微
粉末を得た。The crystal structure was found to be the same as that of YFe204 already obtained by the applicant. The weights of the starting mixed sample and the reaction product were precisely weighed, and the stoichiometry of the resulting sample was determined. Example: Ytterbium oxide (YQ03) with a purity of 99.9% or more
) powder, gallium oxide (Ga20
3) Weigh out the powder and reagent grade zinc oxide (Zn○) powder at a molar ratio of 1:1:2, add ethyl alcohol in a floating pot and mix thoroughly to obtain an average particle size of A fine powder of kite was obtained.
該混合物を白金ルッボ内にみたして、130000に設
定されたす箱型のシリコニット炉内に入れ、2日間加熱
し、その後試料を炉外にとりだし、室温まで急速に冷却
した。得られた試料はYbGaZn04であり、既に報
告されているYFe204と結晶学的には、同型である
ことが粉末X線回折法によって確認された。試料重量が
加熱前後で精密に秤量され、得られた試料の化学量論数
が決定された。第1表に得られた試料の結晶学的性質を
示した。The mixture was filled in a platinum rubbo and placed in a box-shaped siliconite furnace set at 130,000 ℃ and heated for 2 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample was YbGaZn04, and it was confirmed by powder X-ray diffraction that it was crystallographically the same type as the previously reported YFe204. The weight of the sample was precisely weighed before and after heating, and the stoichiometry of the resulting sample was determined. Table 1 shows the crystallographic properties of the samples obtained.
図面は、本発明のYbGaZn04結晶の図である。
最大の丸は酸素、中丸はイッテルビウム、最小黒丸はガ
リウムと亜鉛を示す。務ノ凶The drawing is a diagram of the YbGaZn04 crystal of the present invention. The largest circle indicates oxygen, the middle circle indicates ytterbium, and the smallest black circle indicates gallium and zinc. misfortune of duty
Claims (1)
を有する化合物。 2 金属イツテルビウム(Yb)あるいは酸化イツテル
ビウム(Yb_2O_3)もしくは、加熱されることに
より酸化イツテルビウム(Yb_2O_3)に分解され
る化合物と、金属ガリウム(Ga)あるいは酸化ガリウ
ム(Ga_2O_3)もしくは、加熱されることにより
酸化ガリウム(Ga_2O_3)に分解される化合物と
、亜鉛(Zn)あるいは酸化亜鉛(ZnO)もしくは、
加熱されることにより分解されて酸化亜鉛(ZnO)を
生ずる化合物とを、イツテルビウム、ガリウム、亜鉛の
割合が原子比で1対1対1になるように混合して、12
00℃以上の温度で大気中、酸化性雰囲気あるいはガリ
ウムおよび亜鉛が各々3価イオン状態、2価イオン状態
より還元されない程度の還元雰囲気のもとで加熱するこ
とを特徴とするYbGaZnO_4で示される六方晶系
の層状構造を有する化合物の製造法。[Claims] 1. A compound having a hexagonal layered structure represented by YbGaZnO_4. 2 Metallic ytterbium (Yb) or ytterbium oxide (Yb_2O_3), or a compound that decomposes into ytterbium oxide (Yb_2O_3) when heated, and metallic gallium (Ga) or gallium oxide (Ga_2O_3) or a compound that is heated. a compound which is decomposed into gallium oxide (Ga_2O_3) and zinc (Zn) or zinc oxide (ZnO) or
A compound that is decomposed by heating to produce zinc oxide (ZnO) is mixed with ytterbium, gallium, and zinc in an atomic ratio of 1:1:1 to produce 12
Hexagonal YbGaZnO_4 characterized by heating in the air at a temperature of 00°C or higher in an oxidizing atmosphere or in a reducing atmosphere to the extent that gallium and zinc are not reduced to a trivalent ion state or a divalent ion state, respectively. A method for producing a compound having a crystalline layered structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11833181A JPS606895B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by YbGaZnO↓4 and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11833181A JPS606895B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by YbGaZnO↓4 and method for producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5820720A JPS5820720A (en) | 1983-02-07 |
JPS606895B2 true JPS606895B2 (en) | 1985-02-21 |
Family
ID=14734010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11833181A Expired JPS606895B2 (en) | 1981-07-28 | 1981-07-28 | Compound having hexagonal layered structure represented by YbGaZnO↓4 and method for producing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS606895B2 (en) |
-
1981
- 1981-07-28 JP JP11833181A patent/JPS606895B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5820720A (en) | 1983-02-07 |
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