JPS6068617A - Ion milling method for semiconductor device - Google Patents
Ion milling method for semiconductor deviceInfo
- Publication number
- JPS6068617A JPS6068617A JP17743383A JP17743383A JPS6068617A JP S6068617 A JPS6068617 A JP S6068617A JP 17743383 A JP17743383 A JP 17743383A JP 17743383 A JP17743383 A JP 17743383A JP S6068617 A JPS6068617 A JP S6068617A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion milling
- junction
- filament
- milling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000992 sputter etching Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000005555 metalworking Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000272201 Columbiformes Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229920000704 biodegradable plastic Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は加速されたイオンにより半導体装置をエツチン
グするいわゆる。半導体装置のイオンミリング方法に−
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention involves etching a semiconductor device using accelerated ions. Ion milling method for semiconductor devices
It is something to do.
加速されたアルゴンイオメトク種々の物質全エツチング
する際物質表面上でイオンによる電荷蓄積が生じクーロ
ン反発力によりエツチング割カ合いが低下する。これを
防止するため、イオンミリング装置では熱フィラメント
がら熱電子全放出して、基板上で電気的に中和するよう
に考慮しである。When accelerated argon ions are used to completely etch various materials, charge accumulation by ions occurs on the surface of the material, and the etching rate decreases due to Coulomb repulsion. To prevent this, the ion milling device is designed to emit all thermionic electrons from the hot filament and electrically neutralize them on the substrate.
しかし被エツチング物質の表面がＰ−型を示すＰ／Ｎ接
合を有する時、プラスイオンのアルゴンはＰ／Ｎ接合に
おいて順方向゛電流が流れる。このように電流はＰ／Ｎ
接合の電気的に流れやすい部分に集中的に流れる為接合
破壊が生じる０通常の半導体装置はスクライプ線がＰ／
Ｎ接合で形成されておタイオンミリング全行うと前述の
接合破壊がスクライプ線において発生し製造上大きな問
題となる。However, when the surface of the material to be etched has a P/N junction exhibiting P-type, positive ion argon causes a forward current to flow in the P/N junction. In this way, the current is P/N
Junction breakdown occurs because the flow is concentrated in the electrically easy-to-flow parts of the junction.In normal semiconductor devices, the scribe line is P/
If the N-junction is formed and all tie ion milling is performed, the aforementioned junction breakdown will occur in the scribe line, causing a major manufacturing problem.
不発明の目的は、これらの接合破壊を改善するものであ
Ｖ安定にイオンミリングが実行する方法を提供すること
にある・
接合破壊の原因は前述のようにＰ／Ｎ接合のある極部に
集中的にイオン電流が流れる為でめハこの電流の流れを
防ぐことに、ｌ：り接合破壊を防止出来る。The purpose of the invention is to improve these junction breakdowns and to provide a method for performing ion milling in a V-stable manner.As mentioned above, the cause of junction breakdown is at the extreme part of the P/N junction. Since the ionic current flows in a concentrated manner, by preventing this current flow, it is possible to prevent junction breakdown.
そこで本発明によれば＃！−導体装置のスクライプ線の
Ｐ／Ｎ接合を有する基板ｔ１イオンミリング装置の基板
ホルダーから電気的に絶縁すること全特徴とする半導体
装置のイオンミリング方法を得る・
次に、図面？参照して不発明をより詳細に説明する・
本発明の一実施例によれば、第１図に示すよう、イオン
ミリング装置はコイルｌで囲まれたアノード２内にフィ
ラメント３上層しており、フィラメント３からのイオン
はカソード４お工び中性化フィラメント５全通して千尋
体基板７の載置された基板６に照射される。半導体基板
７は基板６に与えられている接地電位から電気的に絶縁
させるために、第２図に示すように、２層１７． １９
，２０およびＮ７輪１８の形成されたＮ型基板１６の裏
面にシリコン酸化膜２４ｖｆ−形成しておく、尚２１は
表面酸化膜、２２．２３は金属配線層である。このよう
ＩｃＮ型基板１６の裏面を酸化膜２４でおおっておくこ
とにより、イオンミリング装置ン板ホルダー６に電流が
流れず、従って接合破壊は発生せず歩留が非常に安定す
る。イオノミリング終了後、牛導体基板表面全レジスト
膜で保１ウェトエッチ法でシリコン酸イト膜２４′Ｉ！
−エツチング除去することで半導体装置の選択エツチン
グが完成する。Therefore, according to the present invention, #! - To obtain an ion milling method for a semiconductor device, which is characterized in that the substrate t1 having a P/N junction of the scribe line of the conductor device is electrically insulated from the substrate holder of the ion milling device. Next, what about the drawings? The invention will be explained in more detail with reference to: According to an embodiment of the present invention, as shown in FIG. Ions from the filament 3 pass through the cathode 4 and the neutralized filament 5 and are irradiated onto the substrate 6 on which the chihiro body substrate 7 is placed. In order to electrically insulate the semiconductor substrate 7 from the ground potential applied to the substrate 6, as shown in FIG. 2, two layers 17. 19
, 20 and the N7 ring 18 are formed on the back surface of the N-type substrate 16, a silicon oxide film 24vf- is formed. Reference numeral 21 is a surface oxide film, and 22 and 23 are metal wiring layers. By covering the back surface of the IcN type substrate 16 with the oxide film 24 in this manner, no current flows through the plate holder 6 of the ion milling device, and therefore, no junction breakdown occurs and the yield is extremely stable. After the ionomiring is completed, the entire resist film on the surface of the conductor substrate is wet-etched to form a silicon oxide film 24'I!
- Selective etching of the semiconductor device is completed by etching removal.
このように不発明によるイオンミリングによれば、接合
破壊が起きないでイオンミリングによるエツチング？す
ることが出来る。In this way, according to the uninvented ion milling, it is possible to perform etching by ion milling without causing junction breakdown. You can.
第１図はイオンミリング装置を闇単に示した図である。
第２凶は不発明の一実施例に用いられる半導体装置の断
面図である。
１・・・・・・コイル、２・・・・・・アノード、３・
・・・・・フイラメ／ト、４・・・・・・カソード、５
・・・・・・中１生化フィラメント、６・・・・・・基
板ホルダー、７・・・・・・半導体装置。
１６・・・・・・へ型基板、１７・・・・・・Ｐ層、１
８・・・・・Ｎ鳩、１９．２０・・・・・・Ｐ／Ｎ接合
スクライプ線、２１゜２４・・・・・・シリコン酸化膜
、２２．２３・・・・・・メタル層。FIG. 1 is a schematic diagram of an ion milling device. The second example is a cross-sectional view of a semiconductor device used in an embodiment of the invention. 1... Coil, 2... Anode, 3.
...Film/G, 4...Cathode, 5
. . . Medium bioplastic filament, 6 . . . Substrate holder, 7 . . . Semiconductor device. 16...Hem-shaped substrate, 17...P layer, 1
8...N pigeon, 19.20...P/N junction scribe line, 21°24...silicon oxide film, 22.23...metal layer.
Claims (1)
法においてＰ／Ｎ接合’１１する半導体装置を絶縁膜を
フ「シて接地を位に保持された基板上におき、加速され
たイオンでエツチングすることを特徴とするイオンミリ
ング方法。In a method of metalworking and etching semiconductor devices using accelerated ions, a semiconductor device forming a P/N junction is placed on a substrate held at ground level with the insulating film removed, and then etched using accelerated ions. An ion milling method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17743383A JPS6068617A (en) | 1983-09-26 | 1983-09-26 | Ion milling method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17743383A JPS6068617A (en) | 1983-09-26 | 1983-09-26 | Ion milling method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6068617A true JPS6068617A (en) | 1985-04-19 |
Family
ID=16030853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17743383A Pending JPS6068617A (en) | 1983-09-26 | 1983-09-26 | Ion milling method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068617A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104334A (en) * | 1986-10-21 | 1988-05-09 | Nec Corp | Manufacture of semiconductor device |
| KR100706788B1 (en) | 2005-11-17 | 2007-04-12 | 삼성전자주식회사 | Filament member and ion source of an ion implantation apparatus having the filament member |
| KR100706799B1 (en) | 2005-10-07 | 2007-04-12 | 삼성전자주식회사 | Filament member and ion source of an ion implantation apparatus having the filament member |
-
1983
- 1983-09-26 JP JP17743383A patent/JPS6068617A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104334A (en) * | 1986-10-21 | 1988-05-09 | Nec Corp | Manufacture of semiconductor device |
| KR100706799B1 (en) | 2005-10-07 | 2007-04-12 | 삼성전자주식회사 | Filament member and ion source of an ion implantation apparatus having the filament member |
| KR100706788B1 (en) | 2005-11-17 | 2007-04-12 | 삼성전자주식회사 | Filament member and ion source of an ion implantation apparatus having the filament member |
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