JPS6066879A - Semiconductor device for optical communication - Google Patents

Semiconductor device for optical communication

Info

Publication number
JPS6066879A
JPS6066879A JP58176581A JP17658183A JPS6066879A JP S6066879 A JPS6066879 A JP S6066879A JP 58176581 A JP58176581 A JP 58176581A JP 17658183 A JP17658183 A JP 17658183A JP S6066879 A JPS6066879 A JP S6066879A
Authority
JP
Japan
Prior art keywords
light
ceramic
ceramic substrate
receiving element
shell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58176581A
Other languages
Japanese (ja)
Inventor
Nariyuki Sakura
成之 佐倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58176581A priority Critical patent/JPS6066879A/en
Publication of JPS6066879A publication Critical patent/JPS6066879A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To prevent the malfunction due to noises by a method wherein a photo receiving element is shielded with a conductive layer. CONSTITUTION:A shielding conductive layer 38 is formed on the inner surface of one of apertures 33 and 34 bored in a ceramic substrate 31, and a ceramic substrate 32 is fixed on the back of the substrate 31. The photo receiving elements 30 are fixed at the positions corresponding to the apertures 33 and 34 in the upper part of the substrate 32. The shielding conductive layer 39 is formed so as to cover the front of the substrate 32, and the shielding conductive layer 40 is formed so as to cover the back. During operation, an emitted light is radiated from a photo transmitting window 36 and then transferred through an optical fiber. The transmitted light from the other optical fiber comes in from a photo transmitting window 37 and is then supplied to the element 30.

Description

【発明の詳細な説明】 このづマ゛明6:t S光通イご用半導体装置に関する
DETAILED DESCRIPTION OF THE INVENTION This article relates to a semiconductor device for use in tS optical communication.

〔発明のj.+<δ1、J的背邦とその問題点〕光逆信
で(コ、一♂″”1:に賞.気信郵を光信ぞに変換する
LED(グご,fi.ダイメード)をLI)(レーザダ
イオード)の発光ノ、子を、又イ1:勤に光・1H号を
電気イ1)刊に変換するPD(フォトダイオード)やA
PD(アバランジエ7第1・ダイオード)を[bき、両
V,ij:曲を光ファイバで結合(7て通イ言をイjな
う。少:、m6店i# II!Iで相互(・こ信駕のや
りとりをする縮合には Jl61に発光テ9とダyl÷
子を、又他端にも同様に発光素仔と受光素子を門き、両
・端部の発光f不一受光素子及び受九せう子一発光紫子
間をそれぞね511′フアイバで結合する。
[Invention j. +<δ1, J's apostasy and its problems] With light betrayal (Ko, 1♂''”1: award. LI for LED (gugo, fi. Dimade) that converts spirit mail to light faith) A PD (photodiode) or A that converts the light emitting power of a laser diode (laser diode) into an electrical one
PD (Avalanche 7 1st diode) is connected to [b, both V, ij: songs are connected with optical fiber (7 is the common word). S:, m6 shop i# II!・For the condensation that exchanges this message, Jl61, light emitting te9 and diel÷
Similarly, connect the light-emitting element and the light-receiving element at the other end, and use 511' fiber between the light-emitting element and the light-receiving element and between the light-emitting element and the light-emitting element at both ends. Join.

これらラ゛(−辿イ11に使用さノ1,る半d一体装訃
゛とU7て、第1図に示すように発光辛子2及びそJl
を駆動する1.i qjl.1回路をIC什したナツプ
4をそれぞれリードフ17−ム6に固定し7、ホンディ
ングワイヤ8で所定の結線をした後、透明なグラスチッ
クノ0でモールドした送信用の光半導体装IK1が知ら
力,ている。父、同様に受光零仔及びそのllX力信号
を増幅再生するレシーバ回路i− I C化したチ゛ン
フ″をり−1・゛フi/一ノ・に1−・1定L7、透1
(ノ+71Tフ゛ラスチツクでモールドした受信用の光
半導体装V1も知らノ1ている。
These lights (-1, 1, 1, 2, 3, 3, 3, 3, 3, 3, 3, 3, 3, 3, 3, 3, 4, 5, 4, 5, 5, 6, 5, 1, 5, 1, 2, 1, 2, 1, 2, 1, 2, 1, 2, 1, 2, 1, 5, 1, 5, and 1, respectively, as shown in Figure 1).
1. i qjl. After fixing the naps 4 each containing one IC circuit to the lead frame 17-6 and making the prescribed connections with the bonding wires 8, the transmitting optical semiconductor device IK1 molded with transparent glass glue is attached. The power is there. Similarly, the receiver circuit which amplifies and reproduces the light receiving signal and its llX power signal is converted into an IC.
(I also know of an optical semiconductor device V1 for reception molded with +71T plastic.

上述の光半導体装芥を用いて2つの鼎1間で相互に通信
を行なうための双方向モジュールは、例えば第2図及び
第3図に示さ力るように、送化゛用及び受信J−0のy
tコネクタが「;合する四部12、14を仏えた光不兄
シI′IグラスチックE −ルドl6内に、送イに用半
導体装ff?; 1 8及び勺信用半導体装昭20を接
着剤22で1・1定(2てなっている。この双ブJ向モ
シニノー−ル(、才、】欠(A1’ fil) ト’1
信部が同一のプラスチックセール)’ 7 6 内[パ
ッケージきノ1、ているのでIR Jlい易く、又、光
ファイバが2本並設されたプラグを用いることによりモ
ジュールとプラグの接続が汎即に行なえるというオリ点
を有している。
A bidirectional module for mutually communicating between two inputs 1 using the above-mentioned optical semiconductor device is, for example, as shown in FIGS. 2 and 3, for transmitting and receiving J- y of 0
Glue the semiconductor device for transmission ff?; 18 and the semiconductor device for transmission into the optical fiber I'I glass E-rud l6, which has the four parts 12 and 14 that fit together. Agent 22 is 1.1 constant (2.
The module has the same plastic sales)' 7 6 [Package size 1, so it is easy to connect the IR Jl, and by using a plug with two optical fibers installed in parallel, the connection between the module and the plug is universally possible. It has the advantage of being able to be used in many ways.

しかしながら、上述の双方向モジュールで(、11次の
欠点がある。
However, the above-mentioned bidirectional module (11th order) has a drawback.

■ 光受侶用半導体装置は数百nAという受光素子から
の微弱な信乞を141にうたλイ)、外部雑音の影響を
受け易く、特に送信相半ラ♂1体装置F”では発光素子
で数十rn Aという大電涼ζ・扱うため、この篭vi
Lのスイッチングに起因する雑務が発生し、送信用半鴎
体N=’< i=と近接装置さカる受侶用竿4Fj体峠
5・1へ飛び込み、受信/TelTel半体7.体装置
動作式 ゼ ン)。
■ Semiconductor devices for optical receivers are susceptible to external noise, with weak signals of several hundred nA from the light-receiving element (lambda) being emitted from the light-receiving element. In order to handle several tens of rn A, this basket vi
A miscellaneous task occurs due to the switching of L, and the transmitting half body N='< i= and the proximity device search receiver rod 4Fj jump into the body pass 5.1, and the reception/Tel half body 7. Body device operation type (Zen).

■ 省p4r, z,q体を°口り′は、透明プラスチ
ックによりモール1−ゐil−ていZ7ので、侶箔i 
i’=i:特に耐湿性が耐,いc,(夕:えば、ブレラ
シャフンカブスト(121’0 % 2 ajnl )
では数萌1flで故1i?5 して[、虞う。
■ The openings for the p4r, z, and q bodies are made of transparent plastic and the moldings are made of transparent plastic.
i'=i: Particularly moisture resistant, c, (Evening: For example, Brerashafunkabst (121'0% 2 ajnl)
So, Kazumoe 1fl and late 1i? 5 Then [, be afraid.

C() シ・r、7つ′イバと発ラ°C素子、受X夛士
子とは効率よ〈ブ(、I:1合きせるために、光軸75
lA&に一致している必豊かあるが、発ツL素子、受光
素子はリードii.1.j上にマウントσj1でいるた
め、リードフ1/ − Aのそりや徐少な変形により光
Q:Iずiiを起し易い。更に光年?’i 31φプラ
スチツクモールトl6内に送信用半導体装置及び受イご
用半導体装置をそれぞれ個別に固定しているので、j(
lファイバが2木並設−p itたプラグとのTl泡゛
、公差により光軸ずれが起り易い。
C(), 7' fibers, emitter °C element, receiver
Although it is necessary to match lA&, the emitting L element and the light receiving element are lead ii. 1. Since the mount σj1 is on the lead leaf 1/-A, light Q:Izii is likely to occur due to warping or gradual deformation of the lead leaf 1/-A. Another light year? 'i Since the transmitting semiconductor device and the receiving semiconductor device are individually fixed in the 31φ plastic mold l6, j(
Two optical fibers are installed side by side, and optical axis deviations are likely to occur due to Tl bubbles and tolerances between the plug and the plug.

〔発明の目的] この発明の目的は、上述の問題点を解;′1″!Jする
ものであり、特に卆r音による誤動作4防止するように
工夫さ力,た光通信用半樽体装呂を42倶することであ
る。
[Object of the Invention] The object of the present invention is to solve the above-mentioned problems, and in particular to provide a half-barrel body for optical communication that is devised to prevent malfunctions caused by noise. It is to hold 42 times of soro.

〔発明の概ガ〕[Summary of the invention]

この発明は、第1の開孔〆1(と81ル2の開孔1′!
ンを有する第1のセラミック基イルと、この第1 (r
>・ピラミック部枦のy1而に固着式れた第2グ)セラ
ミック基板と、上記第1の開孔部に対比、した上記第2
のセラミック基板上に固定された発光素子と、上記:第
2の開孔+”iS+.て対し1τ’. L.、 yこ−
[;バ〔:第2のセラミック基板−ヒに固ζ1でされた
受光素子と、上記第1のセラミックス!.オ,・・7の
表面に気密的に制光さh上記発光素子及び受光メ8子と
対向するi;!j /Jiに透孔宕を有する金蔵ν″j
ジェルと、上記第1及び第2の開孔部の少なくとも一方
の内面に形成された第1のシールド用4電層と、上記第
2のセラミック基板の表nIj上の大部分を鉛うように
形成をれた第2のシールド用溝N層と、上記第2のセラ
ミック基板のに二面上の大部分を杖うよう(i二形成心
)1.た概3のシールド用また電Je)□jとカ・らな
る光山二ノ信用牛治、イ(−装色′Sである。
This invention provides the first opening 1 (and the opening 1' of 81 2)!
a first ceramic base plate having a first (r
>・Second group fixed to y1 of the pyramid part
A light emitting element fixed on a ceramic substrate of 1τ'.L., y-
[;B[:Second ceramic substrate - A light receiving element made of solid ζ1, and the first ceramic! .. E, 7 is airtightly light controlled on the surface of h, which faces the light emitting element and light receiving element 8 i;! Kinzo ν″j with a toukou in j/Ji
gel, a first shielding quaternary layer formed on the inner surface of at least one of the first and second openings, and a large part of the surface nIj of the second ceramic substrate so as to lead to the gel; 1. The formed second shielding groove N layer covers most of the two surfaces of the second ceramic substrate (i.e. two formed cores).1. In total, for the shield of 3, it is also electric Je) □j and Ka Naru Mitsuyama Nino Shinji Ushiji, I (-coloring'S).

〔発明の天が11を1〕 この光り」の9゛C4C4帆化渚休装訂は第4図に示す
ように41;; 、lJ(:芒わ、第1のセラミック基
板3)には第1の開孔7:B 、? ;?と第2の開孔
部34が穿だ几でいる。この両開孔T11ζ3.?、、
?4のうち少4[くとも一方1シリえば第2の開孔部3
4の内面にはa器、1のシールド′用冶′ガ層、78が
形1.ニー!ζわている。又、」二H己第1のセラミッ
ク基、1(反3〕の裏17tiにilな、2のセラミッ
クマド;叛32が固ス゛fされている。このハ2のセラ
ミック基q;v 、92上のうち上記第1の開孔部33
に′y’j 16 L 2こ勺り゛ジには発光素子52
が固定ζノ1、上記第2の開孔77(≦34に対応した
位16には受デ素子30がP、)定嘔f″12ている。
[The Heaven of Invention is 11] The 9th edition of ``This Light'' is 41 as shown in Figure 4. Opening hole 7 of 1: B, ? ;? The second opening 34 is bored out. Both openings T11ζ3. ? ,,
? 4 out of 4 [If one side is 1 series, the second opening 3
On the inner surface of 4, there is an a-shaped container, a metal layer 78 for the shield 1, and a shape 1. knee! ζ is over. Further, on the back side 17ti of the first ceramic base 1 (reverse 3), a ceramic base 32 is firmly attached. The first opening 33 in the upper part
2'y'j 16 L 2 light emitting elements 52
is fixed ζ1, and the receiving element 30 is located at the position 16 corresponding to ≦34 (P,) in the second opening 77 (≦34), and the receiving element 30 is fixed at a fixed height f''12.

そして、卯、2のセラミック基板32の表面には、その
大部分を覆うように第2のシールド用導電層39が形成
され、裏面にはその大部分を覆うように第3のシールド
用縛、電層40が形成これている。更に上記第1のセラ
ミツクツi・1板31の表面には、上記発光素子52及
び」二紀伎・光紫子30と対向する1にIPj)]にそ
tしぞノ]、汐?男、236937を有する金属製シェ
ル35の周辺部が気密的に直接鑞付けにより刺着されて
いる。
A second shielding conductive layer 39 is formed on the surface of the ceramic substrate 32 (rabbit 2) so as to cover most of it, and a third shielding layer 39 is formed on the back surface of the ceramic substrate 32 to cover most of it. The electrical layer 40 is now formed. Further, on the surface of the first ceramic board 31, the light emitting element 52 and the IPj) which are opposite to the Nikki-Koshiko 30 are provided. The periphery of the metal shell 35 having a diameter of 236937 is directly soldered in a gas-tight manner.

さて動作時には、発光素子52から発ブCした光は第1
の透光窓36を通って外部に出射さり]、出射した光は
光ファイバによって伝i7: 孕;M−る。
Now, during operation, the light C emitted from the light emitting element 52 is
], and the emitted light is transmitted through an optical fiber.

一方、別の光ファイバによって伝jy−さ力でベフを光
は、第2の透光窓、?77))ら入射U5て受光素子3
0に入り、電流に変換される。
On the other hand, the light is transmitted by another optical fiber to the second light-transmitting window, ? 77)) From the incident U5, the light receiving element 3
0 and is converted into current.

〔発明の効果〕〔Effect of the invention〕

この発明によねば、受光素子30は夷電j仲によりシー
ルドサネでいるので、数百r−+ 、Aという微弱な充
電流を扱うテ;受信部(7を比穀的太算・流を高速でス
イツTングシ1、雑音を発生する介送信部に隣接して設
けられていても、雑音による81′(動作を起こす問題
がなくなった。又、夕t、 a器は、セラミック、金属
、カラスを用いた気密シール悄造となっているため、耐
高低温%性、耐湿性はプラスチックでモールドされた従
来例のものに比べ格段に向上した。例えばプレッシャフ
ッカテスト50時曲経鍋後も伺め異状も認められなかっ
た。更に、この発明によれば、5’e;送受信T;[1
が1つのセラミックZ ’□?)、? 2上に段けられ
ているため、光送信器とうY、受信器を個別に用いるも
のに比べ、光ファイバとの軸ズレを少なくすることがで
きた0− 〔他の実施例〕 第5図乃至第10図は、この発明の(jijの実か籠セ
11を示1.たもので、上記実施例と同様効果が得られ
る。
According to this invention, since the light-receiving element 30 is shielded by the electric current, the receiving section (7 is a comparatively large calculation and the current is high-speed Even if the switch is installed adjacent to an intervening transmitter that generates noise, there is no longer a problem with the noise causing the 81' (operation). Because it is manufactured using an airtight seal, the high and low temperature resistance and moisture resistance are significantly improved compared to conventional models molded with plastic. Furthermore, according to the present invention, 5'e; transmission/reception T; [1
Is there one ceramic Z '□? ),? 2, the axis misalignment with the optical fiber can be reduced compared to the case where the optical transmitter and receiver are used separately. [Other Examples] Fig. 5 1 to 10 show a fruit basket 11 of the present invention, which provides the same effects as the above-mentioned embodiment.

先ず8r1.5図は、第1のセラミック卑゛Aル31上
の周トC5にウェルドリンク41f卸付け[7、このウ
ェルドリング41にシェル35を溶接したものである。
First, Figure 8r1.5 shows the weld link 41f being attached to the circumferential ring C5 on the first ceramic base Al 31 [7], and the shell 35 being welded to this weld ring 41.

次に第6図は、第5図における先送イ言部と光受信部の
中間のシェル35と第1のセラミック基板3)の隙間に
、光送信部側からの光が光受信部側に入らないようにす
るための光不透過物体42を固定し−た例である。
Next, FIG. 6 shows that the light from the optical transmitter side is transmitted to the optical receiver side in the gap between the shell 35 and the first ceramic substrate 3) between the forward transmitter part and the optical receiver part in FIG. This is an example in which a light-impermeable object 42 is fixed to prevent light from entering.

次に卯7図は、受光素子30かrつ出力σt]る電流を
増幅するための受信用t+二に:1回踪■パ子13がへ
す2の開孔部34中に[・!1定σi]たものてイ・・
る0ご(に彫8図は、第7図における)イニ送(i部(
iiiにも、発光金子2を駆動するだめのJ、1ム月ロ
1ユ槓回路素子44が¥Jの[5:4孔部33中にII
・l宇′C王オ]、史に第2の一1ニラミ′ンク弐Yフ
ル32シ’< j?iに設けられた配線を右・うための
第3のセラミツクツ1(叛45を固着させた例である。
Next, Fig. 7 shows that the light receiving element 30 outputs the output σt] at the receiving t+2: once missing ■Path 13 is inserted into the opening 34 of the head 2 [・! 1 constant σi]
(Figure 8 is in Figure 7) Initial feed (Part i (
Also, in iii, the circuit element 44 for driving the light-emitting metal element 2 is installed in the [5:4 hole 33 of J]
・lU'C Kingo], history of the second 11'n'k2 Y full 32'< j? This is an example in which the third ceramic shoes 1 (the diaphragm 45 is fixed) are used to connect the wiring provided on the right side.

次に第9図は、第1のセラミック4.1板3)に穿たわ
たハ′3の開1i−潴(4フイリイ1し、その(lil
i而it面4の甥ハ用導電層4Gで七・、わ〕)てい・
て、ぐσ)中に5;′/、−S用集積回路素子43でb
1定びZlてシ′)るイ’ylで多・ろ。上記第7図及
び−78図の1し・・lで(ハ少′光素子30と受信用
集相回路妬子43か同−N孔部中に固定ζわているが、
J)3うイ1.チのスピードが早くなると、受信用り、
λ、(回路素子43からの電磁ノイズが受光素子30の
表面を通して帰還(7、誤動作し7たり、蜀、振したり
することがp)るカベ第9図のような肖造にすることに
Jニリ、受光素子30と受信用共!;’r回路累子4 
、? l+4jも辿lIしてきるために、更に安定(7
だ動作が可能となるO 最後に第10図は、シェルが第1の透光將50を翁する
第1のシェル48と第2の淡、光詩5)そ有する第2の
シェル49とから牛1η成ζねた例である。
Next, FIG.
I also used a conductive layer 4G for my nephew on the surface 4.
5;'/, -S integrated circuit element 43 and b
1 Determined Zl te shi')ru I'yl and many ro. In the above-mentioned Figs. 7 and 78, the optical element 30 and the receiving phase concentrating circuit element 43 are fixed in the -N hole,
J)3Ui1. As the speed of the chi increases, the reception
λ, (electromagnetic noise from the circuit element 43 returns through the surface of the light-receiving element 30. J Niri, both for light receiving element 30 and reception!;'r circuit Seiko 4
,? Since l+4j also follows lI, it is even more stable (7
Finally, FIG. 10 shows that the shell is composed of a first shell 48 that has a first transparent light 50 and a second shell 49 that has a second transparent light 50. This is an example of a cow that fell to maturity.

+1. IM! 17r−jのf;i’、i 、iP、
 fi Fffi FFJ&711図(ま従来の光う!
9信用生導体架Sを示す平面[゛h1第2図及び第3図
は光通イ8用モジュールの一例を示す正面図と断面図、
谷14図(才この発明の一実施911に係る光1(’ 
イij用半埠体1娼らを示ず断面図、第5図乃至第10
図1はこの発明の能の実施例を示す断面図である。
+1. IM! 17r-j f;i', i, iP,
fi Fffi FFJ & 711 figure (well, the conventional light!
A plane showing the 9-trust raw conductor frame S [゛h1 Figures 2 and 3 are a front view and a cross-sectional view showing an example of a module for optical communication A8,
Valley 14 (Light 1 (') according to one implementation 911 of this invention
Cross-sectional views of the semi-barrier 1 for Iij (not showing the parts), Figures 5 to 10
FIG. 1 is a sectional view showing an embodiment of the present invention.

、90・・・受光素子、31・・・第1のセラミック基
l1反、′?2・・・第2のセラミック基板、33・・
・第1の開孔部、34・・第2の開孔部、35・・・シ
ェル、36.37・・・透光窓、38・・・第1のシー
ルド用導電層、39・・・第2のシールドJ[1汎電層
、40・・・第3のシールド用溝%層、5Z・・・発光
素子。
, 90... Light-receiving element, 31... First ceramic base l1,'? 2... second ceramic substrate, 33...
- First opening, 34... Second opening, 35... Shell, 36.37... Transparent window, 38... First shielding conductive layer, 39... Second shield J[1 general purpose layer, 40...Third shield groove% layer, 5Z...Light emitting element.

出願人代理人 弁理士 鈴 江 武 彦第1図 ? 第4N 第5図 方 第6図 2Applicant's agent: Patent attorney Takehiko Suzue Figure 1 ? 4th N Figure 5 direction Figure 6 2

Claims (1)

【特許請求の範囲】 (1ンE’+ 1の開孔部と第2の開孔部を有する第1
のセラミックス!゛イνと、この第1のセラミック¥、
イ′jこのr而に固できれた第2のセラミック基4]、
と、上記り1,1の開孔部に対応した上記第2のセラミ
ック基板上に固定された発光素子と上記第2の開孔部に
対応した上記第2のセラニックノル板上に1も1定され
た受i y、”子と、上記第1のセラミック、21.板
の表面に気密的に封着き力、上記発光素子及び受光素子
と対向する1゛、・’、 r’;に正光ネを有する金屑
製シェルと、上記着’r 1. l/−0’ (4T 
2の開孔部の少なくとも一方の内ij’;i VC形戊
坏・11.た第1のシールド用砺、電層と、上記第2の
セラミック基板の表面上の大部分・2件うよ・う:て形
成きれた第2のシールド用層’t’j、 Ji5と、上
記第2のセラミック基板の裏面上の大部分を件うように
形成ζ)1.た泥3のシールド用溝1に層とを具備する
ことを特徴とした九 研J イ凸 月」 ≧1′ ξ)
イ本 装置F’ 。 (2)上記第2のGFI孔部に対応した上記第2のセラ
ミック蟇イ及上に、上記受光素子と眠気的に接続さノし
た受価用集aJr回・路素子を1.’iJ定した特許請
求の範囲第(1)Q記、j;j:の元辿信用半導体装置
0 (3)上記第1のセラミック基板に第3の開孔部を設Q
フ、このε33の開孔Ht+の内面に第4のシールド用
2A’i8二PJを形成し、−1つ第3の開孔部に対比
、した上記5゛二2のセラミック基板上に上記受光素子
と電気的に接続された受信用集積回路素子を固定した特
許請求の範囲第1項記載の九通伯用半尋体装伺。 (4)上記シェルは、上記発光素子に対向するτ1i]
に第1の透光窓を有する第1のシェルと、上記受光素子
に対向する面に第2の透光窓を有する第2のシェルとか
らなっている特許請求の範囲第(1)項乃至第(3)項
記載の光通信用半26体装h0
[Scope of Claims]
Ceramics!゛Iν and this first ceramic¥,
A second ceramic base 4 which has been hardened in this manner,
1 and 1 are fixed on the light emitting element fixed on the second ceramic substrate corresponding to the openings 1 and 1 above, and on the second ceramic plate corresponding to the second openings 1 and 1, respectively. The first ceramic plate is airtightly sealed to the surface of the plate, and a positive light source is applied to the light emitting element and the light receiving element facing the light emitting element and the light receiving element. a shell made of scrap metal having the above-mentioned
At least one of the openings of No. 2 ij'; the first shielding layer, which has been completely formed on the surface of the second ceramic substrate; Formed to cover most of the back surface of the second ceramic substrate ζ)1. The shielding groove 1 of the shield 3 is provided with a layer.
This device F'. (2) Place a receiver aJr circuit/circuit element connected to the light-receiving element in a drowsy manner on the second ceramic cap corresponding to the second GFI hole. 'iJ Claims No. (1) Q, j; j:'s original tracing semiconductor device 0 (3) Providing a third opening in the first ceramic substrate Q
F, a fourth shielding 2A'i82PJ is formed on the inner surface of this ε33 opening Ht+, and the light receiving plate is placed on the 5゛22 ceramic substrate, which is contrasted with -1 to the third opening. 1. A half-body mounting device for a nine-tone body according to claim 1, wherein a receiving integrated circuit element electrically connected to the element is fixed. (4) The shell faces the light emitting element τ1i]
Claims (1) to (1) are comprised of a first shell having a first light-transmitting window on the surface thereof, and a second shell having a second light-transmitting window on the surface facing the light-receiving element. Semi-26 optical communication system h0 described in paragraph (3)
JP58176581A 1983-09-24 1983-09-24 Semiconductor device for optical communication Pending JPS6066879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58176581A JPS6066879A (en) 1983-09-24 1983-09-24 Semiconductor device for optical communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58176581A JPS6066879A (en) 1983-09-24 1983-09-24 Semiconductor device for optical communication

Publications (1)

Publication Number Publication Date
JPS6066879A true JPS6066879A (en) 1985-04-17

Family

ID=16016060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58176581A Pending JPS6066879A (en) 1983-09-24 1983-09-24 Semiconductor device for optical communication

Country Status (1)

Country Link
JP (1) JPS6066879A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273652U (en) * 1985-10-29 1987-05-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273652U (en) * 1985-10-29 1987-05-12

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