JPS6065799A - 結晶成長方法 - Google Patents

結晶成長方法

Info

Publication number
JPS6065799A
JPS6065799A JP58171174A JP17117483A JPS6065799A JP S6065799 A JPS6065799 A JP S6065799A JP 58171174 A JP58171174 A JP 58171174A JP 17117483 A JP17117483 A JP 17117483A JP S6065799 A JPS6065799 A JP S6065799A
Authority
JP
Japan
Prior art keywords
melt
solution
compound
compound semiconductor
semiconductor crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58171174A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357076B2 (enrdf_load_stackoverflow
Inventor
Kazuo Nakajima
一雄 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58171174A priority Critical patent/JPS6065799A/ja
Priority to EP84306410A priority patent/EP0140565B1/en
Priority to DE8484306410T priority patent/DE3479523D1/de
Priority to US06/652,239 priority patent/US4620897A/en
Priority to KR8405728A priority patent/KR890002000B1/ko
Publication of JPS6065799A publication Critical patent/JPS6065799A/ja
Priority to US06/864,982 priority patent/US5021224A/en
Publication of JPH0357076B2 publication Critical patent/JPH0357076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58171174A 1983-09-19 1983-09-19 結晶成長方法 Granted JPS6065799A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP58171174A JPS6065799A (ja) 1983-09-19 1983-09-19 結晶成長方法
EP84306410A EP0140565B1 (en) 1983-09-19 1984-09-19 Method for growing multicomponent compound semiconductor crystals
DE8484306410T DE3479523D1 (en) 1983-09-19 1984-09-19 Method for growing multicomponent compound semiconductor crystals
US06/652,239 US4620897A (en) 1983-09-19 1984-09-19 Method for growing multicomponent compound semiconductor crystals
KR8405728A KR890002000B1 (en) 1983-09-19 1984-09-19 Method for growing multicomponent compound semiconductor crystals
US06/864,982 US5021224A (en) 1983-09-19 1986-05-20 Apparatus for growing multicomponents compound semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58171174A JPS6065799A (ja) 1983-09-19 1983-09-19 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS6065799A true JPS6065799A (ja) 1985-04-15
JPH0357076B2 JPH0357076B2 (enrdf_load_stackoverflow) 1991-08-30

Family

ID=15918370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58171174A Granted JPS6065799A (ja) 1983-09-19 1983-09-19 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS6065799A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008280225A (ja) * 2007-05-14 2008-11-20 Sumitomo Metal Ind Ltd 単結晶の製造方法および製造装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845193A (ja) * 1981-09-14 1983-03-16 Fujitsu Ltd エピタキシヤル成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845193A (ja) * 1981-09-14 1983-03-16 Fujitsu Ltd エピタキシヤル成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008280225A (ja) * 2007-05-14 2008-11-20 Sumitomo Metal Ind Ltd 単結晶の製造方法および製造装置

Also Published As

Publication number Publication date
JPH0357076B2 (enrdf_load_stackoverflow) 1991-08-30

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