JPS6065525A - Method of photo chemical vapor deposition and device therefor - Google Patents
Method of photo chemical vapor deposition and device thereforInfo
- Publication number
- JPS6065525A JPS6065525A JP17309683A JP17309683A JPS6065525A JP S6065525 A JPS6065525 A JP S6065525A JP 17309683 A JP17309683 A JP 17309683A JP 17309683 A JP17309683 A JP 17309683A JP S6065525 A JPS6065525 A JP S6065525A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- substrate
- light source
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は光ＣＶＤによる膜形成方法及び光ＣＶＤ装ｆ
ｔに関する。[Detailed description of the invention] [Technical field to which the invention pertains] This invention relates to a film forming method by photo-CVD and a photo-CVD equipment.
Regarding t.
光化学反応は、適当な励起波畏のもとでは、熱的反応に
叱べて効率が良く％また電磁界や荷電粒子が存在し々い
ため、プラズマＣＶＤ等におけるエネルギーを持った荷
電粒子が引き起す照射損傷の回避やプロセスの低温化の
可能性がある。Photochemical reactions are more efficient than thermal reactions under appropriate excitation waves, and because electromagnetic fields and charged particles often exist, they are caused by charged particles with energy in plasma CVD, etc. There is a possibility of avoiding radiation damage and lowering the temperature of the process.
％ Ｋ 光ＣＶ Ｄ 法によるアモルファスφシリコン
（以下ａ−８ｉと略記）膜の形成では、光エネルギーに
よるラジカル反応のみであるため、高品質な膜を得られ
る可能性があり、また装置が簡単で制御が容易であるこ
とから、大面積化も容易であると考えられる。%K Formation of amorphous φ silicon (hereinafter abbreviated as a-8i) film by photo-CVD method involves only radical reaction due to light energy, so it is possible to obtain a high-quality film, and the equipment is simple. Since it is easy to control, it is thought that it is easy to increase the area.
しかし、光ＣＶＤ法によるａ−８ｉ膜の形成・では、光
源あるいは、光が入射する窓にも膜が付着し、入射光量
が減少してａ−８ｉ膜の堆積速度が時間とともに減少す
るという問題がある。However, when forming the A-8I film using the photo-CVD method, the problem is that the film adheres to the light source or the window through which the light enters, reducing the amount of incident light and decreasing the deposition rate of the A-8I film over time. There is.
その解決法として、光入射窓に蒸気圧が低く。The solution is to use a light entrance window with low vapor pressure.
紫外線を透過する油を塗布し、膜が付着するのを防止す
る方法が提案されている。しかしこの方法では、油から
膜中に不純物が入る可能性がある。A method has been proposed to prevent the film from adhering by applying an oil that transmits ultraviolet rays. However, this method may introduce impurities from the oil into the film.
装置を２富に分け、基板と窓を分離できるようにして基
板を外気にさらさずに、窓に付着した膜を除去すること
により、何回かに分けて成長する方法も提案されている
（応物８５８春６Ｐ−Ａ−１７井上他）。A method has also been proposed in which the film is grown in several batches by dividing the equipment into two parts, allowing the substrate and window to be separated, and removing the film attached to the window without exposing the substrate to the outside air ( 858 Spring 6P-A-17 Inoue et al.).
この方法では、基板支持台に上下機構を取り付け、また
ゲートパルプも必要となり、装置が複雑で高価と々る欠
点がある。This method requires a vertical mechanism to be attached to the substrate support and also requires a gate pulp, which has the disadvantage that the apparatus is complex and expensive.
この発明は上述した従来装置及びその方法の欠点を改良
したもので、基板を外気にさらさずに厚く膜を堆積する
ことのできる安価な光ＣＶＤ方法及びその装置を提供す
ることを目的とする。The present invention improves the drawbacks of the conventional apparatus and method described above, and aims to provide an inexpensive photo-CVD method and apparatus capable of depositing a thick film without exposing the substrate to the outside air.
〔発明の概要〕
光じゃへい用開閉板を開として膜形成用原料ガスを流し
て光源を点灯し、膜を堆積する。堆積中に光源あるいは
光透過窓に膜が付着し、入射光量が減少してきた々らば
、光じゃへい用開閉板を閉として、エツチング用ガスに
切替、光源あるいは光透過窓に付着した膜を光励起エツ
チングする。[Summary of the Invention] The light blocking plate is opened, a raw material gas for film formation is allowed to flow, a light source is turned on, and a film is deposited. If a film adheres to the light source or the light-transmitting window during deposition and the amount of incident light begins to decrease, close the light blocking plate and switch to the etching gas to remove the film that has adhered to the light source or the light-transmitting window. Photo-excited etching.
エツチング終了後、続いて膜を形成する。以上の操作を
繰返してなる基板を外気にさらさずに厚く膜を堆積する
ことのできる光ＣＶＤ法による膜形成方法。After etching is completed, a film is subsequently formed. A film forming method using a photo-CVD method that allows a thick film to be deposited without exposing the substrate to the outside air by repeating the above operations.
光化学反応を起させる光源と、基板を支持する支持台と
の間に光じゃへい用開閉板を設けるか、光源と光じゃへ
い用開閉板との間に光透過窓を設けて々る光ＣＶＤ装置
。Optical CVD in which a light shielding opening/closing plate is provided between the light source that causes a photochemical reaction and a support base that supports the substrate, or a light transmitting window is provided between the light source and the light shielding opening/closing plate. Device.
基板を外気にさらさずに厚く膜を堆積でき、膜中に油か
らの不純物の入り込みがなく、高品質な膜が得られる。A thick film can be deposited without exposing the substrate to the outside air, and a high-quality film can be obtained without impurities from oil entering the film.
また、装置が単純であるため、安価に装置を作製するこ
とができる。Furthermore, since the device is simple, it can be manufactured at low cost.
実施例１
第１図に本発明の一実施例である光ＣＶＤ装置の概略構
成図を示す。図中５は容器で、この容器 □５内には光
化学反応を起させる低圧水銀ランプ１、試料６を支持す
る支持台８、光じゃへい用開閉板２が設けられている。Embodiment 1 FIG. 1 shows a schematic configuration diagram of an optical CVD apparatus which is an embodiment of the present invention. In the figure, reference numeral 5 denotes a container, and inside this container □5 are provided a low-pressure mercury lamp 1 for causing a photochemical reaction, a support stand 8 for supporting a sample 6, and an opening/closing plate 2 for blocking light.
容器５を排気系４により１１０−６［：Ｔｏｒｒ〕台ま
で排気した後、基板支持台８をヒーター７により基板６
の温度が２５０［℃］となるよう加熱する。ガス系３か
ら水銀を含んだシラン（ＳｉＨ４）を導入し、容器５内
圧力１ （Ｔｏｒｒ）に設定する。After the container 5 is evacuated to the level of 110-6 Torr by the exhaust system 4, the substrate support 8 is heated to the substrate 6 by the heater 7.
Heat to a temperature of 250 [°C]. Silane (SiH4) containing mercury is introduced from the gas system 3, and the pressure inside the container 5 is set to 1 (Torr).
低圧水銀ランプ１を点灯させ、紫外光が安定に放射され
た後、光じゃへい用開閉板２を開いて膜形成を初める。After the low-pressure mercury lamp 1 is turned on and ultraviolet light is stably radiated, the light blocking plate 2 is opened to begin film formation.
低圧水銀ランプ１表面に膜が付着し、基板６表面への入
射光量が減少したならば、光しゃへい用開閉板２を閉じ
て、ガスの導入を停屯し、排気系４により、１０−６［
Ｔ、ｏａａ１台まで排気した後、ガス系３から塩素ガス
を導入し、容器５内圧力を−１０［Ｔｏｒｒ〕に設定し
て、低圧水銀ランプ１に付着した膜をエツチングする。When a film has been deposited on the surface of the low-pressure mercury lamp 1 and the amount of light incident on the surface of the substrate 6 has decreased, the light shielding opening/closing plate 2 is closed to stop the introduction of gas, and the exhaust system 4 is used to release the 10-6 [
After evacuation to one unit of T, oaa, chlorine gas is introduced from the gas system 3, and the pressure inside the container 5 is set to -10 [Torr] to etch the film attached to the low-pressure mercury lamp 1.
エツチングにより基板６表面への入射光量が増大したな
らば、塩素ガスの導入を停止し７て、上記手順によシ膜
形成を行う。When the amount of light incident on the surface of the substrate 6 increases due to etching, the introduction of chlorine gas is stopped 7 and a film is formed according to the above procedure.
以上手順を数回繰返して形成したａ−８１膜の特性を以
下に示す。The characteristics of the a-81 film formed by repeating the above procedure several times are shown below.
膜厚 １，０〔μ〕
専’ｙＭ ＃ 宋（ＡＭ−１Ｆ）１．ＩＸｌ ０’ｒ
（Ｑ−ｃｍ）” １暗導電率 ２．３Ｘ１０ ’（（、
Ｑ−ｃｌｎ） ’：］光学的バンドキャップ １．７６
〔ｅｖ〕実施例２
第２図に本発明の一実施例である光ＣＶＤ装置の概略構
成図を示す。図中１２はランプノーウスであり、ランプ
ハウス１２内に低圧水銀ランプ１が設けられている。容
器５は光透過窓１１により密閉されており、容器５内に
は、光じゃへい用開閉板２と基板支持台８が配置されて
いる。被エツチング物が光透過窓１１に付着した膜とな
るのみで、実施例１と同様々手順でａ−８ｉ膜を形成し
たところ、実施例１と同等々膜特性が得られた。Film thickness 1.0 [μ] Specialized M # Song (AM-1F) 1. IXl 0'r
(Q-cm)" 1 dark conductivity 2.3X10' ((,
Q-cln) ':] Optical bandcap 1.76
[ev] Example 2 FIG. 2 shows a schematic configuration diagram of an optical CVD apparatus which is an example of the present invention. In the figure, 12 is a lamp house, and a low-pressure mercury lamp 1 is provided in a lamp house 12. The container 5 is hermetically sealed by a light transmitting window 11, and a light shielding opening/closing plate 2 and a substrate support stand 8 are arranged inside the container 5. When an a-8i film was formed in the same manner as in Example 1, except that the material to be etched was attached to the light-transmitting window 11, film characteristics equivalent to those in Example 1 were obtained.
なお本発明は上記実施例に限られガい。例えば堆積する
膜はａ−８ｉに限らず紫外線を透過しないよう々（例え
ば金欄膜）等でもかまわない。ａ−８ｉ膜の場合には膜
形成用原料ガスはジシラン（ＳｉｚＨｓ）、テトラメチ
ルシラン（ＴＭＳ）等でもよく、ドーピング用ガスとし
てジボラン（Ｂ２Ｈ６）、フォスフイン（ＰＨａ）、メ
タン（ＣＨ４）、アンモニア（ＮＨｓ）等を含んでもよ
い。また、エツチング用ガスはフッ素、塩素を含む化合
物ガス等でもかまわない。圧力、基板温度は所望の膜に
より適宜定めればよく、水銀を含＼
まない直接励起でもよい。捷た、光源は低圧水銀ランプ
に限るものではなく、希ガスのマイクロ波放電による光
源等でもかまわない。Note that the present invention is not limited to the above embodiments. For example, the film to be deposited is not limited to A-8I, but may also be a film that does not transmit ultraviolet rays (for example, a metal column film). In the case of a-8i film, the raw material gas for film formation may be disilane (SizHs), tetramethylsilane (TMS), etc., and the doping gas may be diborane (B2H6), phosphine (PHa), methane (CH4), ammonia ( NHs) and the like. Further, the etching gas may be a compound gas containing fluorine or chlorine. The pressure and substrate temperature may be determined as appropriate depending on the desired film, and direct excitation without mercury may be used. The light source is not limited to a low-pressure mercury lamp, but may also be a light source using microwave discharge of rare gas.
ＶＤ装置の概略構成図である。1 is a schematic configuration diagram of a VD device.
図において、
１・・・低圧水銀ランプ、２・・・光じゃへい用開閉板
、３・・ガス系、４・・・排気系、５・・容器、６・・
・基板、７・・・ヒーター、８・・・基板支持台、９・
・不活性ガスライン、１０・・・光反射板、１１・・光
透過窓、１２・・・ランプハウス。In the figure, 1...Low pressure mercury lamp, 2...Opening/closing plate for light shielding, 3...Gas system, 4...Exhaust system, 5...Container, 6...
・Substrate, 7... Heater, 8... Substrate support stand, 9.
- Inert gas line, 10... light reflecting plate, 11... light transmitting window, 12... lamp house.
代理人 弁理士 則近憲佑（他１名）Agent: Patent attorney: Kensuke Norichika (1 other person)
Claims (3)
膜形成を行い、光じゃへい用開閉板の閉鎖時に光源ある
いは、光透過窓に付着した膜の光励起によるエツチング
を行う事を特徴とする光ＣＶＤ方法。(1) A film is formed by a photochemical reaction when the light shielding opening/closing plate is opened, and a film attached to the light source or the light transmitting window is etched by photoexcitation when the light shielding opening/closing plate is closed. Optical CVD method.
持する支持台を有する光ＣＶＤ装置において、該光源と
基板支持台との間に光しゃへい用開閉板を設ける事を特
徴とする光ＣＶＤ装置。(2) An optical CVD apparatus having a light source that causes a photochemical reaction in a container and a support stand that supports a substrate, characterized in that a light shielding opening/closing plate is provided between the light source and the substrate support stand. CVD equipment.
る光を透過する窓と、容器内に設けられた基板を支持す
る支持台とからなる光ＣＶＤ装置において、該光透過窓
と基板支持台との間に光じゃへい用開閉板を設ける事を
特徴とする光ＣＶＤ装置。(3) In a photo-CVD apparatus comprising a light source that causes a photochemical reaction, a window that transmits light emitted from the light source, and a support stand that supports the substrate provided in a container, the light transmission window and the substrate support. An optical CVD device characterized by providing an opening/closing plate for light shielding between the stand and the stand.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17309683A JPS6065525A (en) | 1983-09-21 | 1983-09-21 | Method of photo chemical vapor deposition and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17309683A JPS6065525A (en) | 1983-09-21 | 1983-09-21 | Method of photo chemical vapor deposition and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6065525A true JPS6065525A (en) | 1985-04-15 |
Family
ID=15954113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17309683A Pending JPS6065525A (en) | 1983-09-21 | 1983-09-21 | Method of photo chemical vapor deposition and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6065525A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63232416A (en) * | 1987-03-20 | 1988-09-28 | Sony Corp | Formation of thin-film through photochemical vapor growth |
-
1983
- 1983-09-21 JP JP17309683A patent/JPS6065525A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63232416A (en) * | 1987-03-20 | 1988-09-28 | Sony Corp | Formation of thin-film through photochemical vapor growth |
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