JPS6064471A - High voltage insulated gate type field-effect transistor - Google Patents

High voltage insulated gate type field-effect transistor

Info

Publication number
JPS6064471A
JPS6064471A JP58172555A JP17255583A JPS6064471A JP S6064471 A JPS6064471 A JP S6064471A JP 58172555 A JP58172555 A JP 58172555A JP 17255583 A JP17255583 A JP 17255583A JP S6064471 A JPS6064471 A JP S6064471A
Authority
JP
Japan
Prior art keywords
region
drain region
opposing
high voltage
corner part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58172555A
Inventor
Mikiko Saito
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP58172555A priority Critical patent/JPS6064471A/en
Publication of JPS6064471A publication Critical patent/JPS6064471A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

PURPOSE:To prevent the permanent breakdown generating on the titled transistor by a method wherein the region, to be turned to the source region 13 opposing to the corner part of a drain region 12, is converted to an earth lead-out region 22, thereby enabling to stop the injection of electrons to a substrate from the above-mentioned part. CONSTITUTION:A high voltage insulated gate type FET is constituted in such a manner that the plane shape wherein the region to be turned to a source region 13 opposing to the corner part of a drain region 12 will be included is an earth lead-out region 22, and that the high withstand voltage drain region opposing to the corner part of the drain region 12 will be pushed out in the direction of the end part on the source region side of an offset gate region 14. As a result, the injection of carrier from the source region opposing to the corner part of the drain region is completely stopped, the source substrate junction is brought in the state where it is hardly forward-biased, and the current concentration in the high voltage drain region is relieved.
JP58172555A 1983-09-19 1983-09-19 High voltage insulated gate type field-effect transistor Pending JPS6064471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172555A JPS6064471A (en) 1983-09-19 1983-09-19 High voltage insulated gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172555A JPS6064471A (en) 1983-09-19 1983-09-19 High voltage insulated gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6064471A true JPS6064471A (en) 1985-04-13

Family

ID=15944024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172555A Pending JPS6064471A (en) 1983-09-19 1983-09-19 High voltage insulated gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6064471A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
JP2005093696A (en) * 2003-09-17 2005-04-07 Matsushita Electric Ind Co Ltd Lateral mos transistor
JP2005311211A (en) * 2004-04-26 2005-11-04 Fuji Electric Device Technology Co Ltd Horizontal semiconductor device
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6504209B2 (en) 2001-01-24 2003-01-07 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6818490B2 (en) 2001-01-24 2004-11-16 Power Integrations, Inc. Method of fabricating complementary high-voltage field-effect transistors
US6501130B2 (en) 2001-01-24 2002-12-31 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6882005B2 (en) 2001-09-07 2005-04-19 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6750105B2 (en) 2001-09-07 2004-06-15 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6781198B2 (en) 2001-09-07 2004-08-24 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6787847B2 (en) 2001-09-07 2004-09-07 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6667213B2 (en) 2001-09-07 2003-12-23 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6838346B2 (en) 2001-09-07 2005-01-04 Power Integrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6987299B2 (en) 2001-09-07 2006-01-17 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6815293B2 (en) 2001-09-07 2004-11-09 Power Intergrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US7115958B2 (en) 2001-10-29 2006-10-03 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
JP2005093696A (en) * 2003-09-17 2005-04-07 Matsushita Electric Ind Co Ltd Lateral mos transistor
JP2005311211A (en) * 2004-04-26 2005-11-04 Fuji Electric Device Technology Co Ltd Horizontal semiconductor device
US9601613B2 (en) 2007-02-16 2017-03-21 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

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