JPS6063963A - Bevel type thyristor - Google Patents
Bevel type thyristorInfo
- Publication number
- JPS6063963A JPS6063963A JP17152283A JP17152283A JPS6063963A JP S6063963 A JPS6063963 A JP S6063963A JP 17152283 A JP17152283 A JP 17152283A JP 17152283 A JP17152283 A JP 17152283A JP S6063963 A JPS6063963 A JP S6063963A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- element body
- groove
- sealing material
- lower surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003566 sealing material Substances 0.000 claims abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 230000000379 polymerizing effect Effects 0.000 claims description 4
- 239000012530 fluid Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 241000269821 Scombridae Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000020640 mackerel Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明ｔｊＰ層とＮ層との接合部分を外気からシール
することによって耐圧性を向上させるベベル杉ザイリス
タに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a beveled cedar Zyristor that improves pressure resistance by sealing the joint between a tjP layer and an N layer from the outside air.
ザイリスタには、Ｐ層とＮ層との接合部分の表面を所定
の角度の斜面に形成し、表面電界を弱くして表面破壊を
避けるようにした、いわゆるベベル形のものが知られて
いる。このようなベベル形サイリスタにおいて、上記斜
面にシリコンゴムなどのシール材を塗布し、Ｐ層とＮ層
との接合部分を外気からシールすることによって、耐圧
性をさらに向上させることが行なわれている。A so-called bevel type Zyristor is known in which the surface of the junction between the P layer and the N layer is formed into a slope at a predetermined angle to weaken the surface electric field and avoid surface breakdown. In such bevel-type thyristors, the pressure resistance is further improved by applying a sealing material such as silicone rubber to the slope to seal the joint between the P layer and the N layer from the outside air. .
ところで、従来は第１図に示すように斜面ａは、Ｐ層と
Ｎ層とを順次重合して形成された素子本体すの上下面周
辺部から外周面にわたって形成されていた。そのため、
上記斜面ａにシリコンゴムのような流動性のあるシール
４１ｃを塗布すると、このシール材Ｃが凝固するまでに
斜面ａの傾斜方向に沿って流れ、斜面ａを確実にシール
できなくなるので、これを防止するために素子本体ａの
外周面に外枠ｅ Ｊｌｉ’：付けてシール材Ｃの塗布を
行なっていた。したがって、ソール材Ｃの塗布に多くの
手間が掛り、生産性の低下を招くという問題があった。Incidentally, conventionally, as shown in FIG. 1, the slope a was formed extending from the upper and lower peripheral portions to the outer peripheral surface of an element body formed by sequentially polymerizing a P layer and an N layer. Therefore,
If a fluid seal 41c such as silicone rubber is applied to the slope a, the seal material C will flow along the slope direction of the slope a before it solidifies, making it impossible to reliably seal the slope a. In order to prevent this, an outer frame e is attached to the outer circumferential surface of the element body a, and the sealing material C is applied. Therefore, there was a problem in that it took a lot of time and effort to apply the sole material C, leading to a decrease in productivity.
この発明は素子本体の外周面に外枠ｋ 取（＝ｊけずに
Ｐ層とＮ層との接合部分にシール材を確実に塗布できる
ようにしたベベル形サイリスタを提供することにある。The object of the present invention is to provide a bevel-type thyristor in which a sealing material can be reliably applied to the joint portion of the P layer and the N layer without cutting an outer frame on the outer peripheral surface of the element body.
Ｐハ４とＮ層とが重合されて形成された素子本体の上下
面周辺部に、この素子本体の上下に位置する各層の周辺
部を塔状に残す状態で埋込み溝を形成し、この埋込み溝
にシール材を充填することにより、シール材を流動させ
ずに設けることができるようにしたものである。An embedding groove is formed in the periphery of the upper and lower surfaces of the element body formed by polymerizing the P-4 and N layers, leaving the periphery of each layer located above and below the element body in a tower shape. By filling the groove with a sealant, the sealant can be installed without flowing.
以下、この発明の一実施［＋ｌＩ ＊ 第２図と第３図
’ｔ： ｍ ｉｉ＠、 Ｌ、て説明する。第２図中１は
ベベル形サイリスタの素子本体である。この素子本体１
は、図面における下側から２層２、Ｎ層３および２層４
が順次重合されているとともに、上側のＰ；彌４には中
央部にＮＩＷＩ５が設けられ、周辺部にはゲート端子６
が接続されている。また、下側のＰ１＠２には１嚇極７
が接続され、Ｎ＋Ｉ脅６には陰極８が接続されている。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 2 and 3't: m ii@, L. Reference numeral 1 in FIG. 2 is the element body of the bevel-type thyristor. This element body 1
are the 2nd layer 2, the N layer 3, and the 2nd layer 4 from the bottom in the drawing.
are sequentially polymerized, and NIWI 5 is provided in the center of the upper P;
is connected. In addition, the lower P1@2 has 1 threat pole 7
is connected, and the cathode 8 is connected to the N+I inlet 6.
つまり、素子本体ｌはＮ−Ｐ−凡−Ｐの４層構造となっ
ている。In other words, the element body 1 has a four-layer structure of N-P-B-P.
上記素子本体Ｉの上下面周辺部には、素子本体１の外周
面よりも０．２〜工龍程度径方向内側に埋込み溝９が形
成されている。この埋込み溝９は、素子本体１の外周面
側に位置する底面の一端がＮ層３に向って傾斜した斜面
１０となっており、この斜面ＩＯに各Ｐｐｄ２，４とＮ
１曽３との接合部分が露出している。また、この埋込み
溝９により、谷Ｐｊ＠２，４の周辺部は、この２層２，
４と分離されたリング１１に形成されている。そして、
上記各埋込み溝９にシリコンゴムなどの流動性のあるシ
ール材１２が塗布されている。An embedded groove 9 is formed in the peripheral portion of the upper and lower surfaces of the element main body I, radially inward from the outer circumferential surface of the element main body 1 by about 0.2 to 10 mm. One end of the bottom of the embedded groove 9 located on the outer peripheral surface side of the element main body 1 is a slope 10 that is inclined toward the N layer 3.
The joint part with 1st 3 is exposed. Also, due to this embedded groove 9, the peripheral part of the valley Pj@2, 4 is formed by the two layers 2,
4 and a separate ring 11. and,
Each of the embedded grooves 9 is coated with a fluid sealing material 12 such as silicone rubber.
上記素子本体１に埋込み溝９を加工するには、第３図に
示す加工装置１５で行なわれる。この加工装置１５は、
取付は機Ｉ６と、一対の加工機１７とから構成されてい
る。取付は機１６は軸受１８に回転自在に支持されたス
ピンドル１９と、このスピンドル１ｇの一端に設けられ
た真空チャック２０と、上記スピンドル１９の他端に嵌
着された従動グーリ２１と、この従ｈｕｂプーリ２Ｉと
モータ２２の回転軸２３に嵌着された駆動グーリ２４と
に張設されたベルト２５と力・ら構成されている。そし
て、上記真空チャック２０に素子本体ｌが真空吸涜され
、スピンドル１ｇはモータ２２によって５０〜１ＯＯｒ
、ｐ、ｍで回転駆動されるようになっている。Machining of the embedded groove 9 in the element body 1 is performed using a processing device 15 shown in FIG. This processing device 15 is
The installation consists of a machine I6 and a pair of processing machines 17. The machine 16 is installed by a spindle 19 rotatably supported by a bearing 18, a vacuum chuck 20 provided at one end of the spindle 1g, a driven googly 21 fitted on the other end of the spindle 19, and a driven googly 21 fitted to the other end of the spindle 1g. It is composed of a belt 25 stretched between a hub pulley 2I and a drive gooey 24 fitted to a rotating shaft 23 of a motor 22. Then, the device main body l is vacuum-sucked by the vacuum chuck 20, and the spindle 1g is rotated by the motor 22 at 50 to 10 Orr.
, p, and m.
−また、上記加工機１７は、ベース２６上１．（設けら
れたモータ２７と、このモータ２７０回転＋１曲２８に
取１合された研削砥石２９と、上記ベース２６を送る送
り機構３０とからなる。この送り峡構３０は、羽り覚３
Ｉによって回転自在に支持ざオとだ送りねじ３２がベー
ス２６に設けられた台片３３に螺合している。上記送り
ｘ２じ３２Ｖ（は継手３４を介して送りモータ３５の回
転軸３６がＪＦ結されている。したがって、送りモータ
３５が作動することにより上記ベース２６、つまり研削
砥石２９が回転軸２８の軸線を直交する方向に送られる
。そして、上記研削砥石２９はモータ２７によって２０
０００〜５００００ｒ−Ｄ、Ｉｎで１自１ 鯖ｈｕ＜
’ｆ＋ｒｈ ｉ ｈ−Ａ −上記構成の一対の加工機１
７は、各研削砥石２９が素子本体１の上下面に対して所
定の角度で傾斜した状態で配設されている。したがって
、各研削砥石２９を素子本体１に向けて送ることにより
、この素子本体１の上下面に同時に埋込み溝９を加工す
ることができる。- Also, the processing machine 17 is arranged such that the processing machine 17 has a 1. (It consists of a motor 27 provided, a grinding wheel 29 coupled to the motor 270 rotations + 1 rotation 28, and a feed mechanism 30 that feeds the base 26.
A feed screw 32, which is rotatably supported by I, is screwed into a base piece 33 provided on the base 26. The above-mentioned feed x2 is 32V (the rotation shaft 36 of the feed motor 35 is connected to the JF connection via the joint 34. Therefore, when the feed motor 35 operates, the base 26, that is, the grinding wheel 29 is aligned with the axis of the rotation shaft 28. The grinding wheel 29 is sent in the direction perpendicular to the grinding wheel 29 by the motor 27.
000~50000r-D, In 1 self 1 mackerel hu<
'f+rh i h-A - A pair of processing machines 1 with the above configuration
7, each grinding wheel 29 is disposed so as to be inclined at a predetermined angle with respect to the upper and lower surfaces of the element body 1. Therefore, by sending each grinding wheel 29 toward the element body 1, the embedded grooves 9 can be simultaneously machined on the upper and lower surfaces of the element body 1.
しかして、上述したごとく形成されるベベル形サイリス
タによれば、流動性のあるシール材１２を埋込÷溝９に
塗布するようにした。そのため、上記シール材１２の流
動が埋込み溝９によって規制されるから、この埋込み６
９内で凝固し、各２層２，４とＮ層３との露出した接合
部分、つまシ埋込み溝９の底面である斜面１゜を確実に
シールする。また、素子本体１の上下面周辺部にリング
ＩＩを残す念め、このリング１１によって素子本体１の
周辺部が保護される。According to the bevel-shaped thyristor formed as described above, the fluid sealing material 12 is applied to the embedded groove 9. Therefore, since the flow of the sealing material 12 is regulated by the embedded groove 9, the embedded groove 9
9, the exposed joint portions between the two layers 2 and 4 and the N layer 3, and the 1° inclined surface which is the bottom surface of the tamper embedding groove 9 are reliably sealed. Further, in order to leave the ring II around the upper and lower surfaces of the element body 1, the peripheral area of the element body 1 is protected by this ring 11.
つまり、埋込み溝９を形成した素子本体！全搬送する際
などに、上記リング１］によって２層２．４とＮ層３の
鞘当した接合部分である斜面２０に他の物が接触しずら
くなるがら、この斜而１０の損傷を妨げる。さらに、素
子本体Ｉの周辺部がリング１１によって補強されるから
、４この素子本体ｌの剛性が大きく低下するのを防げる
。In other words, the element body with the embedded groove 9 formed! When transporting the entire structure, the ring 1 prevents other objects from coming into contact with the slope 20, which is the joint portion of the second layer 2.4 and the N layer 3, and prevents damage to the slope 10. . Furthermore, since the peripheral portion of the element body I is reinforced by the ring 11, it is possible to prevent the rigidity of the element body I from decreasing significantly.
〔発明の効果Ｊ
以上述べたようにこの発明は、Ｐ層とＮ層とが重合され
て形成された素子本体の上下面周辺部に、素子本体の上
下に位置する各層の周辺部ヲ猿状に残す状態で埋込み溝
を形成し、この埋込み溝にシール材を充填するようにし
た。したかつで、シール材は埋込み溝によってその流動
が規制されるから、この埋込み溝、つまり埋込み＾４の
が（而に蕗出したＰ層とＮ層の接合部分を確実に７−ル
することができる。すなわち、従来のように外枠を用い
ずにシール材を設けることができるから、生産性の向上
が計れる。また、素子本体の上下面周辺部に上下に位置
する各層の周辺部が環状に残されるから、この環状部分
によってシール材を設ける前に埋込み病に底面が損傷さ
れずらくなるばかりか、素子本体周辺部の剛性を大幅に
低下させるのを防ぐ。[Effects of the Invention J As described above, the present invention provides a monkey-shaped periphery of each layer located above and below the element body on the periphery of the upper and lower surfaces of the element body formed by polymerizing the P layer and the N layer. An embedding groove was formed in such a state that it remained, and this embedding groove was filled with a sealing material. In addition, since the flow of the sealing material is regulated by the embedded groove, it is necessary to ensure that this embedded groove, that is, the embedded groove (and the protruding joint part between the P layer and the N layer) is properly sealed. In other words, since the sealing material can be provided without using an outer frame as in the past, productivity can be improved.In addition, the periphery of each layer located above and below the upper and lower surfaces of the element body can be Since it is left in an annular shape, this annular portion not only prevents the bottom surface from being damaged by embedding disease before the sealing material is provided, but also prevents the rigidity of the periphery of the element body from being significantly reduced.
第１図は従来のベベル形サイリスタの断面図、第２図は
この発明の一実施例を示すベベル形サイリスタの断面図
、第３図は素子本体に埋込み溝を形成するための加工装
置の平面図である。
１・・・素子本体、９・・・埋込み溝、１１・・・リン
グ、１２・・・シール材。Fig. 1 is a cross-sectional view of a conventional bevel-type thyristor, Fig. 2 is a cross-sectional view of a bevel-type thyristor showing an embodiment of the present invention, and Fig. 3 is a plan view of a processing device for forming an embedded groove in an element body. It is a diagram. DESCRIPTION OF SYMBOLS 1...Element body, 9...Embedded groove, 11...Ring, 12...Sealing material.
Claims (1)
素子本体の上下面周辺部に素子本体の上下に位置する各
層の周辺部を環状に残す状態で形成された埋込み溝と、
この埋込み溝に充填されたシール材とを具備したベベル
形サイリスタ。An element body formed by polymerizing a P layer and an N layer, and a buried groove formed in a peripheral area of the upper and lower surfaces of the element body so as to leave peripheral areas of each layer located above and below the element body in an annular shape;
The bevel-shaped thyristor is equipped with a sealing material filled in this embedded groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17152283A JPS6063963A (en) | 1983-09-17 | 1983-09-17 | Bevel type thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17152283A JPS6063963A (en) | 1983-09-17 | 1983-09-17 | Bevel type thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6063963A true JPS6063963A (en) | 1985-04-12 |
Family
ID=15924672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17152283A Pending JPS6063963A (en) | 1983-09-17 | 1983-09-17 | Bevel type thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063963A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018005907A1 (en) | 2017-09-05 | 2019-03-07 | Fanuc Corporation | Water leakage detection system for a laser device |
-
1983
- 1983-09-17 JP JP17152283A patent/JPS6063963A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018005907A1 (en) | 2017-09-05 | 2019-03-07 | Fanuc Corporation | Water leakage detection system for a laser device |
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