JPS6063944A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPS6063944A
JPS6063944A JP58171809A JP17180983A JPS6063944A JP S6063944 A JPS6063944 A JP S6063944A JP 58171809 A JP58171809 A JP 58171809A JP 17180983 A JP17180983 A JP 17180983A JP S6063944 A JPS6063944 A JP S6063944A
Authority
JP
Japan
Prior art keywords
bonding
rails
wire
center
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58171809A
Other languages
Japanese (ja)
Inventor
Toshiyuki Yoda
敏幸 誉田
Junichi Kasai
純一 河西
Akihiro Kubota
昭弘 窪田
Katsushi Yoshitoshi
吉利　勝志
Koichi Kobayashi
幸一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58171809A priority Critical patent/JPS6063944A/en
Publication of JPS6063944A publication Critical patent/JPS6063944A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To contrive the reduction of cost and the improvement of reliability of semiconductor devices by enabling the ultrasonic bonding of aluminum wires by a method wherein the titled device is provided with a transfer table pivoting on rails and a bonding head movable toward the center of the rails, and the bonding lead transfers around a bonding region. CONSTITUTION:When the electrode of a semiconductor element 11 adhered on a lead frame 12 is wire-bonded to leads extending in the periphery of the element 11 by means of aluminum fine wires, with respect to the element 11 on the frame 12 carried immediately under the center of the rails 13, the transfer table 14 pivots on the rails 13 to the fixed position, according to e.g. the radial arrangement of electrodes formed on the element 11. Thereafter, the bonding head 15 on the transfer table 14 moves toward the center, and the electrodes on the element 11 are wire-bonded to the leads in the periphery thereof by means of aluminum wires projected out of a capillary 17 provided at the tip of a bonding arm 16.

Description

【発明の詳細な説明】 （α）発明の技術分野 本発明はワイヤボンデング装置に係り、特にアルミニウ
ムワイヤポンチングを施すワイヤボンデング装置の改良
に関する。DETAILED DESCRIPTION OF THE INVENTION (α) Technical Field of the Invention The present invention relates to a wire bonding device, and more particularly to an improvement in a wire bonding device that performs aluminum wire punching.

（ｂ）　従来技術と問題点 半導体装置における電気的接続、特に電極導出、価格な
どの面からアルミニウムワイヤが多く用いられている。(b) Prior Art and Problems Aluminum wires are often used for electrical connections in semiconductor devices, especially from the viewpoint of electrode lead-out and cost.

そしてボンデングの手段として超音波ボンデングにより
被接続部材に対する加熱が他の方法よりも低く常温にて
も達成できる。As a means of bonding, ultrasonic bonding can heat the connected members at room temperature, which is lower than with other methods.

このため半導体素子の電気的特性を損することが少なく
、ワイヤの価格が安価であるなどの利点も有するがボン
デング部の形状が第１図の斜視図に示すごとくなり一方
向の自由度しか許容されずこのためＩＯ，ＬＳＩ　など
におけるボンデング方向が放射状、直交、斜方向の如き
もののボンデングには被ボンデング部材を平面状に回転
させる必要があった。尚第１図における１は半ｉ！ｉ＋
体素子、２は半導体素子の電極、８はアルミニウムのボ
ンデングワイヤを示す。This has the advantage of less damaging the electrical characteristics of the semiconductor element and lowering the cost of the wire, but the shape of the bonding part is as shown in the perspective view of Figure 1, and only one degree of freedom is allowed. Therefore, when bonding IO, LSI, etc. in which the bonding direction is radial, orthogonal, or oblique, it is necessary to rotate the bonded member into a plane. Note that 1 in Figure 1 is half i! i+
Reference numeral 2 indicates an electrode of the semiconductor element, and reference numeral 8 indicates an aluminum bonding wire.

所でプラスチックＩＯに使用されるリードフレーム上に
上記アルミニウムワイヤボンデングを施す場合には、通
常リードフレームはたとえば１０個連結された１シート
を１単位として取り扱うためボンデングすることは非常
に難かしいという問題があり金線によるポールボンデン
グが一般に用いられていた。However, when performing the above aluminum wire bonding on a lead frame used for plastic IO, it is said that bonding is extremely difficult because normally one sheet of lead frames, for example, 10 pieces connected together, is treated as one unit. Due to this problem, pole bonding using gold wire was commonly used.

（Ｃ）発明の目的 本発明の目的はかかる問題点に鑑みなされたもので、プ
ラスチック丁Ｃに使用されるリードフレームにおいても
アルミニウムワイヤボンデングが可能なワイヤボンデン
グ装置の提供にある。(C) Object of the Invention The object of the present invention was made in view of the above-mentioned problems, and is to provide a wire bonding device capable of performing aluminum wire bonding even on a lead frame used for a plastic plate C.

（ｄ）発明の構成 その目的を達成するため本発明は、リードフレームの間
欠移送路の上のボンデング領域を囲む様にリング状のレ
ールが設けられ且つ該レール上を回動する移動台と、該
移動台上に前記レールの中心部に対し０）動するボンデ
ングヘッドが設けられ、該ボンデングヘッドが該ボンデ
ング領域の周囲を移動してワイヤボンデングがなされる
様にしたことを特徴とする。(d) Structure of the Invention In order to achieve the object, the present invention provides a moving stage which is provided with a ring-shaped rail so as to surround the bonding area above the intermittent transfer path of the lead frame and rotates on the rail; A bonding head that moves with respect to the center of the rail is provided on the movable table, and the bonding head moves around the bonding area to perform wire bonding. do.

（ｇ）　発明の実施例 以下本発明の実施例について図面を参照して股間する。(g) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.

第２図は本発明の一実施例の模式的要部概略図を示す。FIG. 2 shows a schematic diagram of essential parts of an embodiment of the present invention.

同図においてリードフレームの間欠移送路を半導体素子
】１が接着されたリードフレーム１２が所定の間隔にて
間欠移送され、前記移送路の上に２本の同心状のレール
１３が設けられている。In the figure, a lead frame 12 to which a semiconductor element 1 is bonded is intermittently transferred at predetermined intervals, and two concentric rails 13 are provided above the transfer path. .

リング状の該レール１３上には、該レール上を回動する
移動台１４が設けられており、該移動台１４上には前記
レール１３の中心部に対して可動するボンデングヘッド
１５が載置されている。A movable stage 14 that rotates on the rail is provided on the ring-shaped rail 13, and a bonding head 15 that is movable with respect to the center of the rail 13 is mounted on the movable stage 14. It is placed.

又ボンデングヘッド１５には図示したごとくボンデング
アーム１６が配設されその先端にキャピラリ１７が付設
されている。Further, as shown in the figure, a bonding arm 16 is provided on the bonding head 15, and a capillary 17 is attached to the tip of the bonding arm 16.

かかる溝造を有するワイヤボンデング装置を用いてリー
ドフレーム１２上に接着された半導体素子１１の電極と
、該半導体素子１１の周囲に延在するリードとをアルミ
ニウム細線でワイヤボンデングする場合には、前記レー
ル１３の中心部直下に移送されたリードフレーム１２上
の半導体素子１１に対し２て移動台１４が半導体素子１
１上に形成されたたとえば放射状の電極配置に対して、
前記レール１３上を所定位置まで回動し、しかる後移動
合１４上のボンデングヘッド１５が中心部に向って移動
し、ボンデングアーム１６の先端に設けられたキャピラ
リー１７ヨり突出されるアルミニウムＭ（ｌｉＵ示せず
）によって半導体素子１１上の電極とその周囲のリード
との間がワイヤボンデングされる。即ちリードフレーム
１２を回転することなくボンデングヘッド１５を回転す
ることによって一方向しか自由度のないアルミニウムワ
イヤボンデングが可能となる。When wire bonding the electrodes of the semiconductor element 11 bonded onto the lead frame 12 and the leads extending around the semiconductor element 11 using a wire bonding apparatus having such a groove structure, using a thin aluminum wire, , the moving table 14 moves the semiconductor device 11 onto the lead frame 12 directly below the center of the rail 13.
For example, for a radial electrode arrangement formed on 1,
The aluminum M is rotated on the rail 13 to a predetermined position, and then the bonding head 15 on the movable arm 14 moves toward the center, and the aluminum M protrudes from the capillary 17 provided at the tip of the bonding arm 16. (liU not shown) performs wire bonding between the electrodes on the semiconductor element 11 and the leads around them. That is, by rotating the bonding head 15 without rotating the lead frame 12, aluminum wire bonding with only one direction of freedom becomes possible.

ω　発明の詳細 な説明したごとく本発明によればリードフレーム上の半
導体素子のワイヤボンデングにおいて金線によるポール
ボンデングによることなくアルミニウムワイヤの超音波
ボンデングが可能となり高価な金線を用いることなく安
価なアルミニウム線の使用によりコストダウンが可能と
なり、かつ低温配＃！によって半導体素子の特性を損な
うことなく、更にパープルプレグの発生も防止すること
が可能となり半導体’Ｉｆｆのコストダウン及び信頼性
向上に効果がある。ω As described in detail, according to the present invention, ultrasonic bonding of aluminum wires can be performed without pole bonding with gold wires in wire bonding of semiconductor elements on lead frames, and without using expensive gold wires. The use of inexpensive aluminum wire enables cost reduction and low-temperature distribution! This makes it possible to prevent the occurrence of purple preg without impairing the characteristics of the semiconductor element, which is effective in reducing the cost and improving the reliability of the semiconductor 'Iff.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は超音波ボンデングによる電極とアルミニウムワ
イヤとの接合部を示す斜視図、第２図は本発明の一実施
例のワイヤどンデング装置の模式的要部概略構成図であ
る。 図において、１１は半導体素子、１２はリードフレーム
、】３はレール、１４は移動台、】５はボンデングヘッ
ド、１６Ｇ′ｌｉボンデングアーム、１７はキャピラリ
を示す。FIG. 1 is a perspective view showing a joint between an electrode and an aluminum wire by ultrasonic bonding, and FIG. 2 is a schematic diagram of a main part of a wire bonding apparatus according to an embodiment of the present invention. In the figure, 11 is a semiconductor element, 12 is a lead frame, ] 3 is a rail, 14 is a moving stage, ] 5 is a bonding head, 16 is a bonding arm, and 17 is a capillary.

Claims (1)

【特許請求の範囲】[Claims] リードフレームの間欠移送路の上のボンデング領域を囲
む様にリング状のレールが設けられ、且つ朶レール上を
回動する移動台と、該移動台上に前記レールの中心部に
対し可動するボンデングヘッドとが設けられ、該ボンデ
ングヘッドが該ボンデング領域の周囲を移動してワイヤ
ボンデングがなされる様にしたことを特徴とするワイヤ
ボンデング装置。A ring-shaped rail is provided so as to surround the bonding area above the intermittent transfer path of the lead frame, and a moving stage that rotates on the ring rail, and a bond that moves relative to the center of the rail are mounted on the moving stage. 1. A wire bonding apparatus comprising: a bonding head; the bonding head moves around the bonding area to perform wire bonding.
JP58171809A 1983-09-16 1983-09-16 Wire bonding device Pending JPS6063944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58171809A JPS6063944A (en) 1983-09-16 1983-09-16 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58171809A JPS6063944A (en) 1983-09-16 1983-09-16 Wire bonding device

Publications (1)

Publication Number Publication Date
JPS6063944A true JPS6063944A (en) 1985-04-12

Family

ID=15930122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58171809A Pending JPS6063944A (en) 1983-09-16 1983-09-16 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS6063944A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051232U (en) * 1991-06-21 1993-01-08 山形日本電気株式会社 Wire bonding equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051232U (en) * 1991-06-21 1993-01-08 山形日本電気株式会社 Wire bonding equipment

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