JPS6063789A - 記憶装置 - Google Patents

記憶装置

Info

Publication number
JPS6063789A
JPS6063789A JP59157561A JP15756184A JPS6063789A JP S6063789 A JPS6063789 A JP S6063789A JP 59157561 A JP59157561 A JP 59157561A JP 15756184 A JP15756184 A JP 15756184A JP S6063789 A JPS6063789 A JP S6063789A
Authority
JP
Japan
Prior art keywords
line
current
transistor
digit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59157561A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63876B2 (enrdf_load_stackoverflow
Inventor
Kenji Taniguchi
研二 谷口
Koetsu Chiba
千葉 光悦
Atsuo Hotta
堀田 厚生
Ichiro Imaizumi
今泉 市郎
Teruo Isobe
磯部 輝雄
Masahiko Yamamoto
正彦 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59157561A priority Critical patent/JPS6063789A/ja
Publication of JPS6063789A publication Critical patent/JPS6063789A/ja
Publication of JPS63876B2 publication Critical patent/JPS63876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP59157561A 1984-07-30 1984-07-30 記憶装置 Granted JPS6063789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59157561A JPS6063789A (ja) 1984-07-30 1984-07-30 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59157561A JPS6063789A (ja) 1984-07-30 1984-07-30 記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57142090A Division JPS5847794B2 (ja) 1982-08-18 1982-08-18 記億装置

Publications (2)

Publication Number Publication Date
JPS6063789A true JPS6063789A (ja) 1985-04-12
JPS63876B2 JPS63876B2 (enrdf_load_stackoverflow) 1988-01-08

Family

ID=15652368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59157561A Granted JPS6063789A (ja) 1984-07-30 1984-07-30 記憶装置

Country Status (1)

Country Link
JP (1) JPS6063789A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS63876B2 (enrdf_load_stackoverflow) 1988-01-08

Similar Documents

Publication Publication Date Title
US4369503A (en) Decoder circuit
EP0023792B1 (en) Semiconductor memory device including integrated injection logic memory cells
JPS6013119Y2 (ja) 電子回路
US4984207A (en) Semiconductor memory device
US4394657A (en) Decoder circuit
US5016214A (en) Memory cell with separate read and write paths and clamping transistors
EP0055551A2 (en) Output buffer circuit
US4385370A (en) Decoder circuit
US4424582A (en) Semiconductor memory device
EP0018192B1 (en) Bipolar programmable read only memory device including address circuits
JPH0345478B2 (enrdf_load_stackoverflow)
EP0055409A1 (en) A semiconductor memory
EP0090186B1 (en) Complementary logic circuit
JPS6063789A (ja) 記憶装置
KR100227300B1 (ko) 반도체 기억 장치
US3441912A (en) Feedback current switch memory cell
JPS62262295A (ja) ランダム・アクセス・メモリ
US4168540A (en) Register building block with series connected cells to save dissipation loss
JPS6047665B2 (ja) スタティック半導体メモリ
US4964081A (en) Read-while-write ram cell
US4570238A (en) Selectable write current source for bipolar rams
US4899311A (en) Clamping sense amplifier for bipolar ram
US4703458A (en) Circuit for writing bipolar memory cells
JPS595992B2 (ja) 記億装置
JPH0152834B2 (enrdf_load_stackoverflow)