JPS6056308A - Method of patterning transparent conductive electrode film - Google Patents

Method of patterning transparent conductive electrode film

Info

Publication number
JPS6056308A
JPS6056308A JP16348883A JP16348883A JPS6056308A JP S6056308 A JPS6056308 A JP S6056308A JP 16348883 A JP16348883 A JP 16348883A JP 16348883 A JP16348883 A JP 16348883A JP S6056308 A JPS6056308 A JP S6056308A
Authority
JP
Japan
Prior art keywords
transparent conductive
film
conductive electrode
patterning
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16348883A
Other languages
Japanese (ja)
Inventor
悟 川井
安宏 那須
梁井 健一
淳 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16348883A priority Critical patent/JPS6056308A/en
Publication of JPS6056308A publication Critical patent/JPS6056308A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明はディスプレイ装置等における金属酸化物透明電
極膜のバターニング方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for patterning a metal oxide transparent electrode film in a display device or the like.

(2)技術の背景 電子式数字等表示は産業用の装置のみでなく、ポケット
型電卓、ディジタルII′Jl計、電子式腕時剖等に多
用されている。かかる表示には例えば電界発光ディスプ
レイが用いられ、それはガラス基板上の螢光体の薄いフ
ィルムからなり、螢光体と前面の電極は透明である。こ
の電極は一般に透明導電電極膜と呼称されるが、本発明
はそれのパターニングに関するものである。
(2) Background of the Technology Electronic numeric displays are widely used not only in industrial equipment, but also in pocket calculators, digital II'Jl meters, electronic wristwatches, and the like. Such displays use, for example, electroluminescent displays, which consist of a thin film of phosphor on a glass substrate, the phosphor and the front electrode being transparent. This electrode is generally called a transparent conductive electrode film, and the present invention relates to its patterning.

(3)従来技術と問題点 従来の透明導電膜のパターニングにおいては、その透明
導電膜上にそのままレジストを塗布し、このレジストの
露光、現像処理によりパターニングして透明導電膜のエ
ツチングを行い、透明電極を形成していたが、このよう
な方法によるとエツチング後の目視等によるパターン検
査において、パターンが透明であることから、パターン
同志のショートあるいはパターンのオープン(穴などの
隙間があること)等の目視による欠陥検査が困難である
ことが経験された。
(3) Conventional technology and problems In conventional patterning of a transparent conductive film, a resist is applied directly onto the transparent conductive film, and the resist is exposed and developed to pattern the transparent conductive film and then the transparent conductive film is etched. However, with this method, when inspecting the pattern by visual inspection after etching, since the pattern is transparent, short circuits between patterns or open patterns (gaps such as holes), etc. may be detected. It has been experienced that visual inspection for defects is difficult.

(4)発明の目的 本発明は上記従来の問題に泥み、透明な導電電極膜のエ
ツチングにおりるパターン検査を容易にし、しかも透明
導電膜の抵抗値になんら影響を与えない透明導電膜のパ
ターニング方法を提供することを目的とする。
(4) Purpose of the Invention The present invention addresses the above-mentioned conventional problems, and provides a transparent conductive film that facilitates pattern inspection during etching of a transparent conductive electrode film, and that does not affect the resistance value of the transparent conductive film in any way. The purpose is to provide a patterning method.

(5)発明の構成 そしてこの目的は本発明によれば、透明基板上に形成さ
れたディスプレイ装置用の透明導電電極膜をパターニン
グする方法において、該透明電極股上に金属薄膜を全面
に被着した後にフォトレジストを用いたパターニングを
行い、金属膜および透明導電膜のエツチングを順次行い
、フォトレジスト除去後に上部金属膜の選択的エツチン
グを行うことを特徴とする透明導電電極膜のパターニン
グ方法を提供することによって達成される。
(5) Structure and object of the invention According to the present invention, in a method for patterning a transparent conductive electrode film for a display device formed on a transparent substrate, a metal thin film is entirely coated on the crotch of the transparent electrode. To provide a method for patterning a transparent conductive electrode film, which is characterized in that patterning is subsequently performed using a photoresist, the metal film and the transparent conductive film are sequentially etched, and after the photoresist is removed, the upper metal film is selectively etched. This is achieved by

(6)発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.

本発明においてはNiCr、 Ti+ Ta、 Mo、
 W等の金属と透明導電膜を構成する酸化インジウム間
に選択性に優れたエツチング液、エツチング法があるこ
とを利用して目視検査時には、パターニングされた金属
/透明導電電極という211構成で検査を容易にし、検
査後前記の金属膜を選択的にエツチング除去するもので
ある。金属としてNjCrを用いた本発明の第1実施例
を第1図を参照して示す。
In the present invention, NiCr, Ti+Ta, Mo,
Taking advantage of the fact that there are etching solutions and etching methods that have excellent selectivity between metals such as W and indium oxide, which constitutes the transparent conductive film, visual inspection can be performed using a 211 configuration of patterned metal/transparent conductive electrode. After inspection, the metal film is selectively etched away. A first embodiment of the present invention using NjCr as the metal is shown with reference to FIG.

ガラス基板1上に形成されたIIA厚1000人の透明
導電電極膜ずなわち1n203(Sn)膜2上に(第1
図(a)) 、500人の金属膜ずなわちNiCr膜3
を真空蒸着法(またはスパッタ法)により被着形成する
(第1図(b))。
A transparent conductive electrode film with an IIA thickness of 1000 mm, that is, a 1n203 (Sn) film 2 formed on a glass substrate 1 (first
Figure (a)), 500 metal films, namely NiCr films 3
is deposited by vacuum evaporation (or sputtering) (FIG. 1(b)).

その後、感光性レジストII欠4. (それはポジ型で
もネガ型でもよい)を用いたフォトリソグラフィにより
パターン形成を行う。パターン形成後のレジスト膜4は
第2図の平面図に示される。
After that, photosensitive resist II is removed.4. The pattern is formed by photolithography (which may be of a positive type or a negative type). The resist film 4 after pattern formation is shown in the plan view of FIG.

次いで硝酸第2セリウムアンモン((Nh )2 Ce
(NO3)6)を含んだ水溶液でNiCr膜3を、塩化
第2鉄(FeCP!、3)を含んだ水溶液でIn203
(Sn)膜2のエツチングを順次行い、引続きレジスト
膜4の除去を行う。この後、目視によりショート、オー
プンの検査を行い必要に応じて修整を行う。この検査は
黄色のNtCr膜3があるため目視によって容易にかつ
確実に行うことができる。
Then ceric ammonium nitrate ((Nh)2Ce
NiCr film 3 was formed using an aqueous solution containing (NO3)6), and In203 was formed using an aqueous solution containing ferric chloride (FeCP!, 3).
The (Sn) film 2 is sequentially etched, and the resist film 4 is subsequently removed. After that, visually inspect for shorts and opens and make corrections as necessary. This inspection can be carried out easily and reliably by visual inspection because of the presence of the yellow NtCr film 3.

この検査と修整後に硝酸第2セリウムアンモン液でNi
Cr膜3のみの選択エツチングを行い透明導電電極膜の
パターンを得る。NiCrエッチャントのIn2Q3(
Sn)抵抗値にの影響は5時間の浸漬に対して5%程度
の増加があるだ&jであり、NiCrのエツチング時間
は数十秒程度であるので実用上全く問題がないことが確
認された。
After this inspection and repair, Ni was treated with ceric ammonium nitrate solution.
Selective etching is performed only on the Cr film 3 to obtain a pattern of a transparent conductive electrode film. NiCr etchant In2Q3 (
The effect on the resistance value (Sn) is that there is an increase of about 5% for 5 hours of immersion, and since the etching time for NiCr is about several tens of seconds, it was confirmed that there is no practical problem at all. .

次に1’aを用いた本発明の第2実施例を示す。前例と
同様に1000人の透明導電電極膜すなわち1n203
(Sn)膜上に500人の金属膜すなわち1’a股を真
空蒸着により被着形成する。パターニング後、フレオン
(CF4)ガスの円筒形プラズマエツチング装置でガス
圧I Torr、高周波電力200 Wで金属IQ(1
’a>のエツチング(ドライエツチング)を行う。エツ
チング時間は50秒である。その後、前記のIn2Q3
(Sn)エッチャントでエツチングを行い、レジストの
除去、目視検査、修整を行う。Taは黒灰色であるため
、第1実施例の場合と同様に目視検査が容易にかつ確実
になされる。
Next, a second embodiment of the present invention using 1'a will be described. Similar to the previous example, 1000 transparent conductive electrode films, i.e. 1n203
A metal film of 500 layers, ie, a 1'a layer, is deposited on the (Sn) film by vacuum deposition. After patterning, the metal IQ (1
Perform etching (dry etching) of 'a>. Etching time is 50 seconds. Then, the above In2Q3
Etching is performed using a (Sn) etchant, and the resist is removed, visually inspected, and repaired. Since Ta is black-gray, visual inspection can be easily and reliably performed as in the case of the first embodiment.

この後に前記条件のプラズマエツチングでTa1lRの
除去を行い、パターニングが完了する。このようなガス
プラズマエツチングのIn2O3(Sn)抵抗−値への
影響は10分間のエツチングに対して20%程度の増加
があるだけであり、Taのエツチング時間は50秒程度
であるので、多少のオーバーエツチングがあっても実用
上殆ど問題ない。なお、第2実施例のトライエツチング
は、サイトエツチングを伴わないレジストパターン通り
のエツチングがなされる利点がある。
Thereafter, Ta11R is removed by plasma etching under the above conditions, and patterning is completed. The effect of such gas plasma etching on the In2O3 (Sn) resistance value is only about a 20% increase compared to etching for 10 minutes, and since the etching time for Ta is about 50 seconds, there is a slight increase in the resistance value of In2O3 (Sn). Even if there is overetching, there is almost no practical problem. The trial etching of the second embodiment has the advantage that etching is performed in accordance with the resist pattern without site etching.

(7)発明の効果 以上詳細に説明した如く、本発明によれば、ディスプレ
イ装置に用いる透明導電電極膜のパターン検査が容易に
なるので検査時間を大幅に短縮することが可能となる効
果がある。
(7) Effects of the Invention As explained in detail above, according to the present invention, pattern inspection of transparent conductive electrode films used in display devices is facilitated, and therefore inspection time can be significantly shortened. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の方法を実施する工程を示す断面図、第
2図は第1図の工程により得られたレジスト膜のパター
ンを示す平面図である。 ■−ガラス基板、2−透明導電電極膜 (In203(Sn) ) 、3−金1!膜(NiCr
)、4− レジスト膜
FIG. 1 is a sectional view showing the steps of carrying out the method of the present invention, and FIG. 2 is a plan view showing the pattern of the resist film obtained by the steps shown in FIG. ■-Glass substrate, 2-Transparent conductive electrode film (In203(Sn)), 3-Gold 1! Film (NiCr
), 4- resist film

Claims (1)

【特許請求の範囲】[Claims] 透明基板上に形成されたディスプレイ装置用の透明導電
電極膜をパターニングする方法において、該透明電極股
上に金属薄膜を全面に被着した後にフォトレジストを用
いたパターニングを行い、金属膜および透明導電1挨の
エツチングを順次行い、フォトレジスト除去後に上部金
属膜の選択的エツチングを行うことを特徴とする透明導
電電極膜のパターニング方法。
In a method of patterning a transparent conductive electrode film for a display device formed on a transparent substrate, a metal thin film is coated on the entire surface of the transparent electrode, and then patterning is performed using a photoresist to form a pattern of the metal film and the transparent conductive electrode film. 1. A method for patterning a transparent conductive electrode film, which comprises sequentially etching the photoresist and selectively etching the upper metal film after removing the photoresist.
JP16348883A 1983-09-06 1983-09-06 Method of patterning transparent conductive electrode film Pending JPS6056308A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16348883A JPS6056308A (en) 1983-09-06 1983-09-06 Method of patterning transparent conductive electrode film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16348883A JPS6056308A (en) 1983-09-06 1983-09-06 Method of patterning transparent conductive electrode film

Publications (1)

Publication Number Publication Date
JPS6056308A true JPS6056308A (en) 1985-04-01

Family

ID=15774814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16348883A Pending JPS6056308A (en) 1983-09-06 1983-09-06 Method of patterning transparent conductive electrode film

Country Status (1)

Country Link
JP (1) JPS6056308A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769179A (en) * 1985-03-20 1988-09-06 Mitsubishi Cable Industries, Limited Flame-retardant resin compositions
JPH02207418A (en) * 1989-02-06 1990-08-17 Nippon Telegr & Teleph Corp <Ntt> Copper thin film patterning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769179A (en) * 1985-03-20 1988-09-06 Mitsubishi Cable Industries, Limited Flame-retardant resin compositions
JPH02207418A (en) * 1989-02-06 1990-08-17 Nippon Telegr & Teleph Corp <Ntt> Copper thin film patterning method

Similar Documents

Publication Publication Date Title
US4218532A (en) Photolithographic technique for depositing thin films
TW518445B (en) Liquid crystal device and method for manufacturing the same
JP2002141512A (en) Patterning method of thin film, tft array substrate using the patterning method, and manufacturing method of the tft array substrate
US4451554A (en) Method of forming thin-film pattern
JPS5851412B2 (en) Microfabrication method for semiconductor devices
JPS6056308A (en) Method of patterning transparent conductive electrode film
JP2003121989A (en) Method for modifying halftone phase shifting mask
JPH022519A (en) Production of liquid crystal display element
US6261723B1 (en) Transfer layer repair process for attenuated masks
JPS6235361A (en) Photomask material
JP3280407B2 (en) How to prevent deterioration of transparent electrode material
JPH03263331A (en) Manufacture of self alignment type thin film transistor
JP2580681B2 (en) Method for manufacturing semiconductor device
KR100737637B1 (en) Method for manufacturing thin film transistor lcd
JPS61198156A (en) Improved photomask blank
JPH043044B2 (en)
JPH0234966A (en) Patterning of metal electrode on amorphous semiconductor thin film
JPH01154060A (en) Production of photomask
JPH04109223A (en) Manufacture of liquid crystal display element
JP2934731B2 (en) Nonlinear resistance element and manufacturing method thereof
JPS6032203A (en) Method of patterning transparent thin film
JP2878516B2 (en) Photoresist developer, developing method, and thin film transistor manufacturing method
JPS6146520Y2 (en)
JPS6294927A (en) Checking blank
JP2000056468A (en) Method for forming thin film pattern