JPH043044B2 - - Google Patents
Info
- Publication number
- JPH043044B2 JPH043044B2 JP57138248A JP13824882A JPH043044B2 JP H043044 B2 JPH043044 B2 JP H043044B2 JP 57138248 A JP57138248 A JP 57138248A JP 13824882 A JP13824882 A JP 13824882A JP H043044 B2 JPH043044 B2 JP H043044B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- conductive film
- transparent conductive
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 31
- 238000000034 method Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
この発明は、透明な導電膜と金属膜とが積層さ
れた二層構造の電極の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming an electrode having a two-layer structure in which a transparent conductive film and a metal film are laminated.
一般に、表示セルには表示を制御するための表
示用電極が設けられている。例えば、ドツト表示
を行なう液晶表示セルにあつては、液晶を介して
対向配置される一対のガラス基板１，２のうち一
方のガラス基板１の内面には、第１図ａに示すよ
うに縦方向に延びる帯状電極３が透明な導電材で
形成され、また他方のガラス基板２の内面には第
１図ｂに示すように縦方向に共通接続された複数
のドツト電極４が透明な導電材で形成されてい
る。そして、このドツト電極４を有するガラス基
板２にあつては、電気的導通性を向上させるた
め、第２図に示すように、ドツト電極４及びその
リード４ａの上にクロム（Cr）等の金属からな
る金属リード５を形成している。 Generally, display cells are provided with display electrodes for controlling display. For example, in the case of a liquid crystal display cell that displays dots, one of the pair of glass substrates 1 and 2, which are arranged opposite to each other with the liquid crystal interposed in between, is provided with vertical lines on the inner surface of one of the glass substrates 1, as shown in FIG. 1a. A strip electrode 3 extending in the direction is formed of a transparent conductive material, and a plurality of dot electrodes 4 commonly connected in the vertical direction are formed of a transparent conductive material on the inner surface of the other glass substrate 2, as shown in FIG. It is formed of. In order to improve the electrical conductivity of the glass substrate 2 having the dot electrodes 4, a metal such as chromium (Cr) is coated on the dot electrodes 4 and their leads 4a, as shown in FIG. A metal lead 5 is formed.
この様な透明導電膜と金属膜とが積層された電
極からなる表示用電極を形成する場合、従来にお
いては、ガラス基板２の表面に酸化インジウム
（In2O3）等の透明導電膜を形成し、この透明導電
膜上にクロム等の金属膜を蒸着形成し、更にこの
金属膜上にフオトレジスト膜を塗布形成し、この
後にフオトレジスト膜をリードパターンに対応し
て露光し、現像により上記リード部に対応しない
箇所のフオトレジスト膜を除去し、この除去した
部分に対応する金属膜のみをエツチングにより除
去することにより、まず、金属膜からなる金属リ
ード５を形成し、この後再び、金属リード５及び
透明導電膜上にフオトレジスト膜を塗布形成し、
電極パターンに対応させて露光し、現像により電
極パターンに対応しない不要部分のフオトレジス
ト膜を除去し、エツチングにより更に透明導電膜
の不要部分を除去することにより、パターン電極
（ドツト電極４及びそのリード４ａ）を形成して
いた。 When forming a display electrode made of such a laminated electrode of a transparent conductive film and a metal film, conventionally, a transparent conductive film such as indium oxide (In 2 O 3 ) is formed on the surface of the glass substrate 2. Then, a metal film such as chromium is formed by vapor deposition on this transparent conductive film, and a photoresist film is further applied and formed on this metal film, and then the photoresist film is exposed to light corresponding to the lead pattern, and developed to form the above-mentioned film. First, a metal lead 5 made of a metal film is formed by removing the photoresist film in a portion that does not correspond to the lead portion, and removing only the metal film corresponding to the removed portion by etching. Coating and forming a photoresist film on the leads 5 and the transparent conductive film,
The patterned electrodes (dot electrodes 4 and their leads) are formed by exposing to light corresponding to the electrode pattern, removing unnecessary parts of the photoresist film that do not correspond to the electrode pattern by development, and further removing unnecessary parts of the transparent conductive film by etching. 4a) was formed.
しかしながら、電極相互或いはリード間の絶縁
幅を狭くした微細なパターンを形成する場合に
は、エツチングの不均一、及び光学マスクもしく
は基板面に付着した塵埃等によつてエツチング不
良が生じ、電極間の短絡欠陥が生じる。特に、透
明導電膜はエツチング性が悪いためにエツチング
が不均一になりやすく、また塵埃等による短絡欠
陥が生じ易いと言う問題があつた。また、この透
明電極に生じた欠陥は、視覚的に検査することが
困難であり、製造の不良率が高くなると言う問題
があつた。 However, when forming a fine pattern with a narrow insulation width between electrodes or leads, etching defects may occur due to non-uniform etching and dust adhering to the optical mask or substrate surface. A short circuit defect occurs. In particular, transparent conductive films have poor etching properties and tend to be etched non-uniformly, and short-circuit defects due to dust and the like are likely to occur. Furthermore, defects occurring in the transparent electrode are difficult to visually inspect, resulting in a problem that the defective rate during manufacturing is high.
この発明は、上述した事情に鑑みてなされたも
ので、その目的とするところは、透明な導電膜を
エツチングする際の塵埃等による欠陥を簡単な工
程によつて無くすようにした電極の製造方法を提
供することである。 This invention was made in view of the above-mentioned circumstances, and its purpose is to eliminate defects caused by dust and the like during etching of a transparent conductive film through a simple process. The goal is to provide the following.
以下、この発明に係る電極の形成方法を液晶セ
ルの表示用電極に適用した場合の実施例について
第４図、第５図を参照して具体的に説明する。ま
ず、第４図イに示すように、透明ガラス基板１０
の表面に酸化インジウム等からなる透明な導電膜
１１を形成し、この導電膜１１上にクロム等から
なる金属膜１２を形成し、更にこの金属膜１２を
洗浄してその上にフオトレジスト膜１３を塗布形
成する。 Hereinafter, an example in which the method for forming an electrode according to the present invention is applied to a display electrode of a liquid crystal cell will be specifically described with reference to FIGS. 4 and 5. First, as shown in FIG. 4A, a transparent glass substrate 10
A transparent conductive film 11 made of indium oxide or the like is formed on the surface of the conductive film 11, a metal film 12 made of chromium or the like is formed on the conductive film 11, this metal film 12 is further cleaned, and a photoresist film 13 is formed on it. Form by applying.
そして、フオトレジスト膜１３を表示用電極及
びそのリードのパターンに対応させて露光し、現
像によりフオトレジスト膜１３の不要部分（電極
パターンに対応しない部分）を除去する。第４図
ロはこの状態を示したもので、このとき、フオト
レジスト膜１３がネガタイプのものである場合に
は、未露光部のフオトレジストが除去され、また
ポジタイプのものがある場合には、露光部のフオ
トレジストが除去される。 Then, the photoresist film 13 is exposed to light in a manner corresponding to the pattern of the display electrodes and their leads, and unnecessary portions of the photoresist film 13 (portions not corresponding to the electrode pattern) are removed by development. FIG. 4B shows this state. At this time, if the photoresist film 13 is of a negative type, the photoresist in the unexposed area is removed, and if the photoresist film 13 is of a positive type, the photoresist is removed. The photoresist in the exposed areas is removed.
このようにして不要部分のフオトレジスト膜１
３を除去した後は、フオトレジスト膜１３を硬化
し、エツチング液によるエツチングで、フオトレ
ジスト膜１３が取り除かれた箇所の金属膜１２及
び導電膜１１を順次除去する。 In this way, the unnecessary parts of the photoresist film 1 are
After removing the photoresist film 13, the photoresist film 13 is cured, and the metal film 12 and the conductive film 11 at the locations where the photoresist film 13 was removed are sequentially removed by etching using an etching solution.
なお、金属膜１２をエツチングするエツチング
液は金属膜１２の材質によつて異なるが、クロム
の場合、硝酸第２セリウムアンモニウムと過塩素
酸とを混合した水溶液であり、また酸化インジウ
ムからなる透明導電膜１１をエツチングするエツ
チング液は塩酸と塩化第２鉄の混合液である。第
４図ハは金属膜１２及び導電膜１１を除去した状
態を示したもので、金属膜１２及び導電膜１１は
電極パターンに応じた箇所が残るようになる。 The etching solution for etching the metal film 12 differs depending on the material of the metal film 12, but in the case of chromium, it is an aqueous solution containing a mixture of ceric ammonium nitrate and perchloric acid, and a transparent conductive solution made of indium oxide is used. The etching solution for etching the film 11 is a mixed solution of hydrochloric acid and ferric chloride. FIG. 4C shows a state in which the metal film 12 and the conductive film 11 have been removed, and portions of the metal film 12 and the conductive film 11 that correspond to the electrode pattern remain.
その後、残留するフオトレジスト膜１３を第４
図ニに示す用に剥離し洗浄する。 After that, the remaining photoresist film 13 is removed by a fourth film.
Peel and clean as shown in Figure D.
次に、塵埃等による透明な導電膜１１のエツチ
ング不良を無くすために、第６図に示す工程に移
る。先ず第６図イに示すように、基板１０の表面
に金属膜１２の上からフオトレジスト膜１７を形
成する。第６図イは短絡部Ｃが形成された状態を
示し、この場合、フオトレジスト膜１７が形成さ
れた後に、基板１０の裏面側（矢印方向）からそ
の全面を露光する。これによつて、フオトレジス
ト膜１７は透明な基板１０及び導電膜１１を介し
て露光されるが、金属膜１２に対応する部分は光
が透過しないので、露光されず、未露光部とな
る。このため、フオトレジスト膜１７がポジタイ
プのものであれば、現像により露光部が除去さ
れ、第６図ロに示すようになる。 Next, in order to eliminate etching defects of the transparent conductive film 11 due to dust or the like, the process moves to the step shown in FIG. 6. First, as shown in FIG. 6A, a photoresist film 17 is formed on the surface of the substrate 10 from above the metal film 12. FIG. 6A shows a state in which a short-circuit portion C is formed. In this case, after the photoresist film 17 is formed, the entire surface of the substrate 10 is exposed from the back side (in the direction of the arrow). As a result, the photoresist film 17 is exposed to light through the transparent substrate 10 and the conductive film 11, but the portion corresponding to the metal film 12 is not exposed to light and becomes an unexposed portion since no light is transmitted therethrough. Therefore, if the photoresist film 17 is of a positive type, the exposed portion is removed by development, resulting in the result as shown in FIG. 6B.
このようにして基板１０の裏面側から露光を行
つて現像すると、フオトレジスト膜１７は金属膜
１２が露光用マスクとなるので、そのパターンに
応じて除去される。その後、第６図ハに示すよう
に導電膜１１をエツチングすると、短絡部Ｃが除
去される。続いて、残留するフオトレジスト膜１
７を第６図ニに示すように剥離し洗浄する。この
後は、第４図ホ〜チに示した金属リードのパター
ニング工程に移る。 When the substrate 10 is exposed to light from the back surface side and developed in this way, the photoresist film 17 is removed according to the pattern since the metal film 12 serves as an exposure mask. Thereafter, as shown in FIG. 6C, the conductive film 11 is etched to remove the short circuit portion C. Next, the remaining photoresist film 1
7 is peeled off and washed as shown in FIG. 6D. After this, the process moves to the metal lead patterning process shown in FIG.
第４図ホ〜チは、金属リードの製造過程を示し
ている。すなわち、金属膜１２の上から基板１０
の表面に再びフオトレジスト膜１４を形成し、そ
してこのフオトレジスト膜１４をリードパターン
に対応させて露光し、現像により第４図ヘに示す
ようにフオトレジスト膜１４の不要部分（リード
パターンに対応しない部分）を除去する。この
後、エツチング液にてエツチングし、フオトレジ
スト膜１４が取り除かれた箇所の金属膜１２のみ
を除去する。この後、フオトレジスト膜１４を剥
離し洗浄すると、第４図チに示すように透明電極
１５（導電膜１１）上のリード部に金属膜１２の
金属リード１６が形成される。 Figures 4 to 4 show the manufacturing process of the metal lead. That is, the substrate 10 is
A photoresist film 14 is again formed on the surface of the photoresist film 14, and this photoresist film 14 is exposed to light in a manner corresponding to the lead pattern, and by development, unnecessary portions of the photoresist film 14 (corresponding to the lead pattern) are (parts that do not apply) are removed. Thereafter, etching is performed using an etching solution to remove only the portions of the metal film 12 where the photoresist film 14 has been removed. Thereafter, when the photoresist film 14 is peeled off and washed, metal leads 16 of the metal film 12 are formed on the lead portions on the transparent electrode 15 (conductive film 11) as shown in FIG. 4H.
このように上記表示用電極の形成方法によれ
ば、電極パターンを形成したのち金属リードパタ
ーンを形成するようにしたから、リードパターン
形成用マスクの位置が、先に形成した電極パター
ンに対してずれたとしても、第５図に示すよう
に、本来のリード幅Ｌに比べて実際のリード幅Ｍ
はリードパターン形成用マスクのずれ幅Ｎ分小さ
くなるが、絶縁幅は変らず、短絡は起り難くな
る。このようにリード幅が小さくなる点に関して
は、本質的な問題にはならないし、また金属リー
ド１６に良導電性のもの、例えば、クロムにニツ
ケル（Ni）を積層させたもの或いは更に金を積
層させたものを使用するとか、或いは透明導電層
或いは金属層を肉厚にしておくとかの手段により
解決できる。 According to the method for forming display electrodes described above, since the metal lead pattern is formed after forming the electrode pattern, the position of the mask for forming the lead pattern may be misaligned with respect to the previously formed electrode pattern. Even if the actual lead width M is smaller than the original lead width L, as shown in FIG.
is reduced by the shift width N of the lead pattern forming mask, but the insulation width remains unchanged and short circuits are less likely to occur. This reduction in lead width is not an essential problem, and the metal lead 16 should be made of a material with good conductivity, such as chromium laminated with nickel (Ni), or gold further laminated. This problem can be solved by using a transparent conductive layer or by making the transparent conductive layer or metal layer thicker.
これに比べて、従来の製造では、第３図に示す
ように金属リード５下の透明導電膜は金属リード
５により保護されてエツチングされないので、マ
スクの位置ずれ幅Ｘだけ透明電極のリード４ａ及
びドツト電極４の幅が広くなり、本来の絶縁幅Ｙ
に比べて実際の絶縁幅Ｚは狭くなり、それだけ短
絡を生じ易い。 In contrast, in conventional manufacturing, as shown in FIG. 3, the transparent conductive film under the metal lead 5 is protected by the metal lead 5 and is not etched. The width of the dot electrode 4 becomes wider, and the original insulation width Y
The actual insulation width Z is narrower than that, and short circuits are more likely to occur.
なお、前述した実施例においては、各エツチン
グをエツチング液で行なう形で説明したが、この
発明はエツチングをプラズマにより行なうことも
可能であり、その他種々の変形応用が可能であ
る。 In the above-mentioned embodiments, each etching is performed using an etching solution, but the present invention can also perform etching using plasma, and various other modifications are possible.
以上説明した様に、この発明に係る電極の製造
方法によれば、基板上に順次形成された透明な導
電膜と金属膜とを同一パターンに形成した後、そ
の上にレジストを塗布形成し、前記基板の裏面側
から前記レジストを露光するようにしたので、既
にパターンニングされた金属膜が光学マスクとし
て作用するから、格別な露光用のマスクを用いる
ことなく透明な導電膜の不要な残存部分をエツチ
ングによつて除去することができ、電極間の短絡
欠陥の発生率を低下することができる。 As explained above, according to the method for manufacturing an electrode according to the present invention, a transparent conductive film and a metal film are sequentially formed on a substrate in the same pattern, and then a resist is applied thereon. Since the resist is exposed from the back side of the substrate, the already patterned metal film acts as an optical mask, so unnecessary remaining portions of the transparent conductive film can be removed without using a special exposure mask. can be removed by etching, reducing the incidence of short-circuit defects between electrodes.
第１図は液晶セルを示し、第１図ａはその帯状
電極、第１図ｂはドツト電極の平面図、第２図
ａ，ｂは第１図ａ，ｂの要部断面図、第３図は従
来に係る表示用電極形成方法によつて製造された
リード部とドツト電極部間の大きさを示す図、第
４図イ〜チはこの発明に係る電極形成方法におけ
る製造過程図、第５図はこの発明に係る形成方法
で製造されたリード部とドツト電極部間の大きさ
を示す図、第６図イ〜ニは金属膜が除去された部
分に残存する透明な導電膜を除去するためのパタ
ーンニング工程を示す図である。
１０……基板、１１……導電膜、１２……金属
膜、１３，１４，１７……フオトレジスト膜、１
５……透明電極、１６……金属リード、Ｃ……短
絡部。
FIG. 1 shows a liquid crystal cell, FIG. The figure is a diagram showing the size between the lead part and the dot electrode part manufactured by the conventional display electrode forming method, and FIGS. Figure 5 is a diagram showing the size between the lead part and the dot electrode part manufactured by the forming method according to the present invention, and Figures 6A to 6D show the removal of the transparent conductive film remaining in the area where the metal film has been removed. It is a figure which shows the patterning process for doing. 10... Substrate, 11... Conductive film, 12... Metal film, 13, 14, 17... Photoresist film, 1
5...Transparent electrode, 16...Metal lead, C...Short circuit part.
Claims (1)
電膜上に金属膜を順次形成する成膜工程と、これ
らの金属膜及び導電膜を所定の電極パターンにエ
ツチングする電極パターン形成工程と、前記基板
の一方の表面に前記金属膜上からポジタイプのレ
ジスト膜を塗布形成した後このレジスト膜に基板
の他方の面側から光を照射することにより前記電
極パターン形成工程でエツチングされた金属膜を
光学的マスクとして露光し、現像して前記電極パ
ターンに対応するレジストパターンを形成し、こ
のレジストパターンにより、前記金属膜が除去さ
れた部分に残存する前記透明な導電膜を除去する
工程とを有する電極の形成方法。1. A film forming step of sequentially forming a transparent conductive film and a metal film on the conductive film on one surface of the substrate; an electrode pattern forming step of etching these metal films and the conductive film into a predetermined electrode pattern; After a positive type resist film is applied and formed on one surface of the substrate from above the metal film, this resist film is irradiated with light from the other side of the substrate to remove the metal film etched in the electrode pattern forming step. forming a resist pattern corresponding to the electrode pattern by exposing and developing as an optical mask, and using this resist pattern to remove the transparent conductive film remaining in the portion where the metal film has been removed. How to form electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13824882A JPS5927409A (en) | 1982-08-09 | 1982-08-09 | Method of forming electrode for display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13824882A JPS5927409A (en) | 1982-08-09 | 1982-08-09 | Method of forming electrode for display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5927409A JPS5927409A (en) | 1984-02-13 |
| JPH043044B2 true JPH043044B2 (en) | 1992-01-21 |
Family
ID=15217522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13824882A Granted JPS5927409A (en) | 1982-08-09 | 1982-08-09 | Method of forming electrode for display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5927409A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6215353A (en) * | 1985-07-08 | 1987-01-23 | カネボウ株式会社 | Air permeable waterproof cloth |
| JP2559684B2 (en) * | 1990-07-04 | 1996-12-04 | 鐘紡株式会社 | Cashmere fabric and method for producing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58145014A (en) * | 1982-02-22 | 1983-08-29 | 株式会社日立製作所 | Method of producing electrode plate |
-
1982
- 1982-08-09 JP JP13824882A patent/JPS5927409A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58145014A (en) * | 1982-02-22 | 1983-08-29 | 株式会社日立製作所 | Method of producing electrode plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5927409A (en) | 1984-02-13 |
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