JPS605517A - Method for exposure using charged particle beam - Google Patents

Abstract

PURPOSE:To enable to draw a pattern in an accurate manner by a method wherein material is divided into a circular arc-shaped elongated region or contracted region from its height distribution, and the irradiation position of a beam is corrected based on the amount of elongation or contraction of the chip which is present on the respective region, thereby enabling to eliminate the deviation of the beam shot position generating due to the deflection of material. CONSTITUTION:The electron beam emitted from an electron gun 2 is focussed by an electron lens on the material 1 held by a material holder 4 and, at the same time, the shot position is controlled by the deflection force of a deflector 5. On this deflector 5, the prescribed positional signal whereon the amount of signal corresponding to the amount of correction based on the elongation or contraction of material is superposed is sent from a CPU through the intermediary of an amplifier 7. To be more precise, said CPU 6 supplies before performing an exposure the memorized amount of elongation or contraction of the chip of material to be exposed to the deflector 5 in superposition to the intrinsic shot position signal. Accordingly, the beam can be shot at the prescribed position of the material 1.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides charged particle beam exposure that enables highly accurate exposure.
4 fj method (J related.

Recently, the electrokinetic condyle exposure/j method has been attracting attention as a method for manufacturing IsI devices and VLSI devices. Taking direct exposure, which is an electron beam exposure method, as an example, an electron beam from an electron gun is focused on a predetermined position on a material, and at the same time, the electron beam is applied to a predetermined area on the material as appropriate. Scan and draw a pattern.

Generally, the material is inserted into the holder, pushed from the lower four corners against the upper surface regulating plates provided at the four corners of the holder, and fixed to the holder, and the holder is
It is placed on a stage that can move in two directions (Y). However, if the fulcrums of the upper surface regulating plate that fix the upper surface of the plate are misaligned with the points on which the pushing force from below acts, the material will flex/j r-L/ and the predetermined electron The shot position of the line is out of order, and the exposure charge is extremely poor <'ch
That's what happens.

The purpose of the present invention is to solve this problem.

The present invention provides a method for drawing a pattern by irradiating a predetermined device with (A, -1) with a v;1 electric particle beam, and measures the Igi of (C7+m) of a large number of (4A?310). Then, calculate the ζ height distribution based on the measured value, and divide the material 1 into arc-shaped elongation regions or knitting regions (,
J, calculate the curvature half of each of the 71 regions, and then calculate the elongation fii of each of the 71 regions.
Charged particles whose irradiation position is corrected based on the amount of elongation or shrinkage of the chips existing in the i region or the width region, and a pattern is created in each chip. It provides a line exposure method.

First of all, the present invention provides a large number of 1i on a material as shown in FIG.
LR, (Xl, V+), (Xl, V2'), (x+,
V3), ...++++, (X2, V+ >, (
X2.

y2), ...... (X3.V+), (X3.
y2')・・・・・・・・・・・・・・・・・・
, the height of (Xn, yn) is known: '5 height measurement') -
Similarly, measure J. For example, find the linear quotient of the monthly interest rate at appropriate intervals in the X and Y directions. From now on, for convenience of explanation, I will explain the height distribution in the Y direction. If you look at the height distribution like a mouth, for example, as shown in Figure 2, it will draw a very gentle arc. Suppose that the distribution 11 in the y3 direction of the molecule li becomes, for example, as shown in Fig. 3. Note that 110 is the reference height.From this distribution, from x1 to xS in the y3 direction on the material. is the stretch area,
The area from 9 to XIS is considered to be a wear area, and the area from XIS to X23 is considered to be an elongation area. Such extension and contraction regions are also specified for the yGh direction, Vs direction, ×3 direction, x6 direction + X9 direction, etc. . Next, the radius of curvature of each arcuate expansion region or contraction region is determined.

Figure 4 is a diagram for calculating the radius of curvature of the elongated gl area, for example, and 1 in the figure follows the height distribution of the eyelid in the previous step (the drawn material C', the thickness is center O (point of reconnaissance arc)
If the distance from the desired point P in the Y direction (the position on the monthly rate of circumference angle θ) is X, and the deviation of the point P from the height of the monthly center O is ΔZ, then the elongation area is The radius of curvature (actually the distance from the center C of the arc to the thickness of 1/2 inch from the middle layer of the material) R of the monthly part in is R=X2/2△7+ΔZ/2-T/ 2...(
1) The entanglement ΔZ is determined by a height measuring device).

Next, the rate of elongation or [
, 1. Calculate the amount of shrinkage. Figure 5 shows the material divided into elongation areas and shrinkage areas, A1 to AI2...
...is divided area 1, each solid curve is y3
direction, Vsh direction, Vsh direction... - (Δ1* A3 + Δ4.A6 , Δ7゜△S, Δ
10. Δ12 is the elongation area, Δ2. A51Δ8. Δ11 is the shrinkage region C). For example, a () in the stretch area △1
1 to aI2 represent boot tabs, and the amount of elongation of each dizzo is measured as follows. Then, the elongation Δ1 can be expressed as Δ1-4TΔZ/2r 0. Here, Δ7 can be entered as ΔZ=r2/, 2R, so r can be entered as r=F7] "7 Kei- is completed, and the amount of elongation △1 is Δ+ = 21- ΔZ/ rY■T■...-(2>
It is possible to intertwine R, T, and ΔZ. Now, stretch 7 (
i lpj, for each chip elongation of 81, a+
, a S , il 9 for U, a, 2. i1.6
．． 'alo.

tkatsui-te, as, a7. Regarding a++, a4゜a
It is the amount of elongation of C large lz times for s and a12.

Said Zizzoil 1. elongation amount Δ of a S, a9
11 is the height of the center of one of the chips and the center O of the area A1
The deviation Δ71 from the height of is substituted into the above equation (2). Similarly, chip a2. a6. a+o, a3, a7. a
l+
12 and Δ13 are also calculated using the above (
2) It can be substituted into Eq. However, during actual pattern drawing, the amount of elongation at the circumference r of the intermediate layer is 1/2 (.DELTA.1..-'2 for pattern drawing 14).
I'll correct the position of the bump.

In this way, the elongation ω and the amount of shrinkage of each chip existing in each elongation region and each shrinkage region are measured using the above formula (1)/+=
R is divided in advance (from T and Δ7 determined by height measurement (2
) Measure J in the equation and store it in the memory of the electronic meter (CPU).
depends on the amount of elongation or shrinkage of the drawing rivet tip of the material (
Modify the position of the beam shot into the chisel. Note that the above explanation is for the X direction (although the same applies to the Y direction as well).

FIG. 6 is a schematic diagram of an electron beam exposure apparatus shown as an application example of the present invention, in which an electron beam emitted from an electron gun 2 passes through an electron lens 3 to a material 1 held in a material holder 4.
At the same time, the shot position is controlled by the deflection force from the deflector 5. This deflector has a CPU
From 6 to 1: to the elongation or contraction of the material into the predetermined position.
Modification by L: An amount of (AP) corresponding to W is superimposed and sent via the amplifier 7. That is, the CP
The IJ supplies the amount of expansion or contraction of the material to be exposed stored in memory before exposure to the deflector so as to be superimposed on the original shot position signal. The C-beam is therefore shot in place on the material.

According to the present invention, the shot position of the beam due to the deflection of vU is eliminated, and this connection S12,1.', G f
;l, you can draw a pattern at once.

[Brief explanation of drawings]

1 to 5 are diagrams used to supplement the explanation of the present invention, and FIG. 6 is a schematic diagram of an electron beam exposure apparatus shown as an example of application of the present invention. 1: Shrine 1 2: Electron gun 4: Material boulder 5: Deflector 6: Electronic calculation unit (CPU) Special R'l applicant population Motoichiko Co., Ltd. representative g + Fuji - husband Figure 1 □ Figure 5 Figure 6

Claims (1)

[Claims] In a method in which an electrokinetic particle beam is irradiated onto a predetermined position on a material to draw a C pattern, the heights at a number of positions on the material are measured, and the height of the r! Based on the distribution, the material is divided into arc-shaped elongated or contracted regions, the radius of curvature of each region is determined, and then the elongation amount or When the amount of shrinkage is determined and a pattern is drawn in each chip, the position of the C beam is adjusted according to the expansion or contraction.