JPH022610A - Method and apparatus for photoelectron transfer - Google Patents

Abstract

PURPOSE:To enable the successive photoelectron transfer of each region of a pattern by only aligning a mask and a wafer even if a photoelectron transfer apparatus having an electrode plate with a slit is used, by equipping a specific operation unit and a specific electric/magnetic field controller and other units. CONSTITUTION:This apparatus includes an operation unit 13 to detect the relative positions of first and second matching patterns on a photoelectron transfer mask 2 having a pattern emitting a light received from a light source 1 and corresponding first and second matching patterns on a wafer 8, perform an operation of the first exposure conditions of the first matching pattern and the second exposure conditions of the second matching pattern, and when exposing the area corresponding to a slit to a light while changing the relative positions of the photoelectron transfer mask 2 and a wafer supporter 6, and an electrode plate with the slit 3, to find the exposure conditions of the exposed part from the relative distances between the exposed part and the first and the second matching patterns and from the first and the second exposure conditions, and an electric/magnetic field controller 7 to correct an electron based on the result sent from the operation unit 13.

Description

[Detailed Description of the Invention] [Summary] Regarding the improvement of a photoelectronic transfer device and a photoelectronic transfer method, particularly an improvement of a photoelectronic transfer device in which a pickpocket 7) is provided between a photoelectronic transfer mask and a wafer, a photoelectronic transfer mask. A mark is provided for each pattern on the wafer and the photoelectronic transfer mask is used to align the wafer, and the transfer conditions and correction conditions for each area of the pattern are calculated. The purpose of the present invention is to provide a photoelectronic transfer device capable of photoelectronically transferring each region continuously, and a photoelectronic transfer method using this photoelectronic transfer device, and the invention includes a light source and a photoelectronic transfer method that uses the photoelectronic transfer device to transfer electrons by receiving the light from the light source. an exposure pattern area having a pattern to emit and a first one provided on both sides of the exposure pattern area;
a photoelectronic transfer mask 2 having a second matching pattern;
The corresponding first rays are exposed to the emitted electrons. a wafer support for supporting a wafer having a second matching pattern; an electrode plate with a slit disposed between the wafer and the photoelectron transfer mask and having a slit through which the electrons can pass; a driving means M for changing the relative position between the wafer support stand and the slit-equipped 1i electrode plate; and a driving means M for changing the relative position between the wafer support base and the slit-equipped 1i electrode plate, and the first and second alignment patterns on the photoelectronic transfer mask and the corresponding first and second alignment patterns on the wafer. Detecting the relative position with respect to the pattern and calculating the first exposure condition for the first alignment pattern and the second n-light condition for the second alignment pattern, When exposing the area corresponding to the slit while changing the relative position with the slit electrode plate, the relative distance between the exposed area and the first and second matching patterns and the first and second exposure A photoelectronic transfer device characterized by comprising: a calculation means for determining the exposure conditions of the exposed area from the conditions; and means for correcting the electrons based on the output of the calculation means; It consists of a photoelectronic transfer method.

[Industrial application field]

The present invention relates to an improvement in a photoelectronic transfer device and a photoelectronic transfer method using the photoelectronic transfer device, and particularly to an improvement in a photoelectronic transfer device in which a slit is provided between a photoelectronic transfer mask and a wafer, and a photoelectronic transfer method using this photoelectronic transfer device. This invention relates to improvements in photoelectronic transfer methods made using the present invention.

[Prior Art] Referring to FIG. 5, photoelectron transfer technology is a technique for transferring a mask image onto a wafer using a photoelectron beam, and its principle will be explained with reference to the drawings. A photoelectron transfer mask 2 and a wafer 8 coated with an electron beam sensitizer 81 are placed facing each other in parallel in a parallel magnetic field H (vertical direction in the figure) generated by a converging coil 5, perpendicular to the magnetic field H. A voltage is applied by the power source 4 so that the photoelectronic transfer mask 2 has a negative potential and the wafer 8 has a positive potential. The photoelectronic transfer mask 2 includes an ultraviolet absorber 22 such as chrome on a transparent substrate zl such as a quartz plate.
A pattern to be transferred is formed, and a film 23 made of a photoelectron emitting material such as cesium iodide, platinum, or the like, which emits electrons when irradiated with ultraviolet rays, is deposited thereon. When the transparent substrate 21 is irradiated with ultraviolet rays generated by the light beam generating means 1, the film 23 made of the photoelectron emitting material deposited on the area without a pattern, that is, the area where the ultraviolet absorber 22 is not formed, is irradiated onto the transparent substrate 21. From, electron 2
4 is released. Electrons 24 emitted from one point on the photoelectron transfer mask 2 travel in a spiral toward the wafer 8 due to the electric field generated by the power source 4 and the magnetic field H generated by the converging coil 5, and move toward the wafer 8 at one point on the wafer 8. The pattern of the photoelectronic transfer mask 2 is accurately transferred onto the wafer 8 by focusing on a point.

Referring to FIG. 4, there is shown a configuration diagram of a photoelectronic transfer device according to the prior art. 1
2 is a light beam generating means consisting of an ultraviolet lamp and a light focusing system; 2 is a photoelectronic transfer mask disposed movably with respect to the light beam generated by the light beam generating means 1;
3 is an electrode plate with slits, and 4 is an electrode plate 3 with slits.
and the photoelectronic transfer mask 2, 5 is a magnetic field generating means that generates a magnetic field H in a direction perpendicular to the photoelectronic transfer mask 2, and 6 is a magnetic field generating means that supports the wafer 8 and has a slit. A wafer support stand movable parallel to the electrode plate 3; 7 is an electric field/magnetic field control means for correcting gain, offset, rotation, trapezoidal deformation, etc. of the pattern to be transferred; 0.9 is a means for controlling the magnetic field, electric field and It is a focusing system control means for adjusting the distance between the photoelectronic transfer mask 2 and the electrode plate 3 with slits, and 10 is a mark position reading means for reading reflected electrons from the marks provided on the wafer 8.

Before this photoelectronic transfer device was developed, an electrode plate 3 with slits was not provided, and a potential difference applying means 4 for applying a potential difference between the photoelectronic transfer mask 2 and the wafer support 6 was not provided.
A potential difference is given by, and the electric field generated by this and the magnetic field generated by the magnetic field generating means 5,
Electrons emitted from the photoelectron transfer mask 2 are accelerated and deflected by light irradiation, and are focused onto the wafer 8 supported by the wafer support 6, exposing the resist film coated on the wafer 8 to form a desired pattern. It was transcribing.

However, due to the high voltage applied between the photoelectronic transfer mask 2 and the wafer 8, spark discharge occurs between them.
Problems such as the resist coated on the wafer 8 scattering and contaminating the photoelectronic transfer mask 2 occurred. Therefore, as described above, the slitted electrode plate 3 is provided between the photoelectronic transfer mask 2 and the wafer 8, and the potential difference is applied by the potential difference applying means 4 that applies a potential difference between the photoelectronic transfer mask 2 and the slitted electrode plate 3. This electric field and the magnetic field generated by the magnetic field generating means 5 accelerate and deflect the electrons emitted from the photoelectron transfer mask, and once they are focused at the slit portion of the slit electrode 13, the electrons are further A photoelectronic transfer device has been developed that focuses exposure onto a wafer 8 by the action of a magnetic field.

[Problem to be solved by the invention]

When transferring a pattern onto the wafer 8, conventionally, marks provided around the pattern on a photoelectronic transfer mask,
The marks provided on the wafer are aligned accordingly, the transfer conditions are calculated, and with these transfer conditions,
The entire pattern was exposed and transferred at once. However, when using a photoelectronic transfer device having an electrode plate with slits, the range that can be exposed and transferred at one time is limited to the area of the slit, for example, 1 x 30 m in width, and the entire pattern can be transferred.
Batch exposure transfer is not possible.

An object of the present invention is to eliminate this drawback, and in a photoelectronic transfer device having a slit III plate, the photoelectronic transfer mask and the wafer are connected in the same way as in the conventional method.
By simply setting a mark for each pattern and using this mark to align the mask and wafer, the transfer conditions and correction conditions for each area of the pattern are calculated, and each area of the pattern is continuously photoelectronically transferred. It is an object of the present invention to provide a photoelectronic transfer device capable of performing photoelectronic transfer, and a photoelectronic transfer method using this photoelectronic transfer device.

[Means to solve the problem]

The above object is achieved by a photoelectronic transfer device and a photoelectronic transfer method having the following configurations.

The photoelectronic transfer device according to the present invention includes a light source (1) and a cough light g.
, a photoelectronic transfer mask (2) having an exposure pattern area having a pattern that emits electrons upon receiving the light of (1), and first and second matching patterns provided on both sides of the exposure pattern area; the corresponding first and second
a wafer support (6) supporting a wafer (8) having a matching pattern of; a slit disposed between the acid wafer (8) and the photoelectronic transfer mask (2) and having a slit through which the electrons can pass; Driving means for changing the relative positions of the electrode plate (3) with the slit, the photoelectronic transfer mask (2), the wafer support (6), and the electrode plate (3) with the slit;
M), detecting the relative positions of the first and second matching patterns on the photoelectronic transfer mask (2) and the corresponding first and second matching patterns on the wafer (8); 1st
The first exposure condition in the matching pattern and the second exposure condition in the second matching pattern are calculated, and the photoelectronic transfer mask (2), the cough wafer support stand (6), and the slitted electrode plate (3 ) When exposing the area corresponding to the slit while changing the relative position with respect to the first and second matching patterns, the relative distance between the exposed area and the first and second matching patterns and the first,
Is the exposure based on the second exposure condition? A photoelectronic transfer device characterized by comprising a calculation means (13) for determining the exposure conditions in the region (1), and an electric field/magnetic field control means (7) for correcting the electrons based on the output of the calculation means (13). It is.

The photoelectronic transfer method according to the present invention includes a light source (1), an exposure pattern area having a pattern that emits electrons upon receiving light from the light source (1), and first and second alignment areas provided on both sides of the exposure pattern area. a photoelectronic transfer mask (2) having a pattern; a wafer support (6) supporting a wafer (8) that has been exposed to the emitted electrons and has corresponding first and second matching patterns; 8) and the photoelectronic transfer mask (2), an electrode plate (3) with a slit having a slit through which the electrons can pass, and the photoelectronic transfer mask (2) and the wafer support (6). The photoelectronic transfer mask (
2) the first and second matching patterns on the wafer (8);
), detecting the relative positions of the first and second matching patterns on the corresponding first and second matching patterns on the basis of the relative positions;
a step of determining the first and second exposure conditions for the matching pattern, and a step of determining the slit position based on the first and second exposure conditions when exposing while moving the slit position by the driving means (M); irradiating the wafer with the electrons under exposure conditions obtained based on the position of the exposure area.

In the above photoelectronic transfer method, when the first and second exposure conditions are T, , T, the exposure condition T of the exposure area corresponding to the slit position is T=(1-χ)TI+χ
T2 (However, the distance between the first and second matching patterns is 1,
It is assumed that the position of the exposure area is at a distance of χ from the second matching pattern. ) is advantageous.

[Operation] In front of the moving direction (indicated by an arrow in the figure) of the pattern PM provided on the photoelectronic transfer mask 2, see FIGS. 3a and 3b, and on a line parallel to the slits S of the slitted electrode plate 3. , mark A
, B, and similarly, marks C and D are provided behind the moving direction of the pattern PM (indicated by an arrow in the figure), and the positions of these marks are stored in the mask mark position storage means 1] (FIGS. 1 and 2). reference). As shown in FIG. 3a, marks aN s bN %c, dN are provided in the Nth pattern on the wafer 8 corresponding to the marks A, B, C, and D, and the photoelectronic transfer mask 2 and the wafer support 6 are As shown by two arrows in the figure, the wafer 8 supported by When the slits S of the slit electrode plate 3 overlap, the mark position reading means 10 (see FIGS. 1 and 2) is used to read the positions of the marks aN and bN on the wafer 8, and the information is stored. The wafer mark position is stored in the wafer mark position storage means 12 (see FIGS. 1 and 2). Furthermore, as shown in FIG. 3b, the photoelectronic transfer mask 2 and the wafer 8 are moved in the same direction as shown by the two arrows in the figure.
Similarly, the positions of the marks CM and dN on the wafer 8 are read and recorded in the wafer mark position storage means 12 (see FIGS. 1 and 2).

Before exposure, mask mark positions are stored in the mask mark position storage means 1 (see FIGS. 1 and 2) and the wafer mark position storage means 12 (see FIGS. 1 and 2). Based on the information, the calculation means 13 (see FIGS. 1 and 2) calculates the mark aN.
The transfer conditions and correction conditions for sbH, marks CM, and dN are calculated, and the transfer conditions and correction conditions corresponding to the line area sandwiched between the line connecting the mark aNxbN and the line connecting the mark CHSdH are calculated using an interpolation method. The transfer conditions are calculated using the focusing system control means 9 (see Figs. 1 and 2).
Then, the correction conditions are input to the electric field/magnetic field control means 7 (see FIGS. 1 and 2). By exposing the photoelectronic transfer mask 2 and the wafer 8 through the slit while moving them in the same direction (arrows in the figure), the focusing system control means 9 (FIGS. 1 and 2)
The transfer conditions are continuously controlled by the electric field/magnetic field control means 7 (see Figs. 1 and 2), and the correction conditions are continuously controlled in accordance with each region of the pattern to be exposed.
Appropriate exposure transfer is performed over the entire range of the pattern PM. When exposing and transferring a large number of patterns onto the wafer 8, the above steps may be repeated for each pattern, but first the mark positions of all patterns are detected and stored in the wafer mark position storage means 12 (FIG. 1). , see Fig. 2), and at the time of exposure, the transfer conditions and correction conditions for the entire area to be transferred are calculated by the calculating means 13 (see Figs. 1 and 2), and the output is used for focusing. By controlling the system control means 9 (see FIGS. 1 and 2) and the electric field/magnetic field control means 7 (see FIGS. 1 and 2),
All patterns can be exposed and transferred in succession.

[Embodiments] Photoelectronic transfer devices according to two embodiments of the present invention and photoelectronic transfer methods using the same will be described below with reference to the drawings.

1 is a light beam generating means consisting of an ultraviolet lamp and a light focusing system, and 2 is a photoelectronic transfer mask arranged movably with respect to the light beam generated by the light beam generating means l. A pattern made of a light absorber such as chrome is formed on a transparent substrate, a film made of a photoelectron emitting material such as cesium iodide, silver, or platinum is formed on the pattern, and when irradiated with light,
This is a photoelectronic transfer mask that emits photoelectrons from a photoelectron emitting material in an area where there is no light absorber. 3 is an electrode plate with slits, 4 is means for applying a potential difference between the electrode plate 3 with slits and the photoelectronic transfer mask 2, and 5 is a magnetic field generating means for generating a magnetic field in a direction perpendicular to the photoelectronic transfer mask 2. 6 is a wafer support stand that supports the wafer 8 and is movable in parallel with the electrode plate 3 with slits, and 7 is an electric field that corrects gain, offset, rotation, trapezoidal deformation, etc. of the pattern to be transferred. A magnetic field control means 9 includes a magnetic field, an electric field, a photoelectronic transfer mask 2, and an electrode plate 3 with slits.
and 10 is a mark position reading means for reading reflected electrons from marks provided on the wafer 8. 14 is a vacuum container connected to a vacuum pump system, and the pressure inside the vacuum container is 10-
'It is maintained at about Torr. Further, 15 is a control unit that controls a motor M that moves the wafer support stand 6 and the mask 2 relative to the slit-equipped 1i electrode plate 3.

6a and 6b FIG. 6a is a diagram showing the position of a mark related to the gist of the present invention attached to the photoelectronic transfer mask 2, and FIG. 6b is a diagram showing the position of the mark attached to the photoelectronic transfer mask 2. FIG. 3 is a diagram showing the positions of marks placed on a wafer exposed to light in correspondence with the above marks.

In the figure, the photoelectronic transfer mask 2 is provided with, for example, two marks A and B at the front in the direction of movement (indicated by an arrow in the figure) for each pattern, and at the rear in the direction of movement (indicated by an arrow in the figure). Similarly, marks C and D are provided. When these marks are irradiated with light, electrons are emitted corresponding to these areas. Marks A, B and marks C, D are provided with their positions shifted from each other in a direction perpendicular to the mask movement direction, as shown in the figure. Mark A of the photoelectronic transfer mask 2 is also on the wafer 8.
, , B, and marks a, b, c, and d are provided corresponding to CSD. For the N-1st pattern formed on the wafer by the step-and-repeat method, marks a, ,
-1% tlN-1% CM-1, dN-1 are provided, N
Mark aN% bN% C for the th pattern
M, dN are set, and for the N+1st pattern, a
Provide w++, bs**% C++++, and dN**. In order that the mark c8-3 of the N-1st pattern and the mark aN of the Nth pattern do not overlap,
- mark aH, b so that the mark dN-1 of the first pattern and the mark bw of the N-th pattern do not overlap.
, 1 and marks CM-+ and d)1-1 must be formed with their positions shifted from each other in a direction perpendicular to the mask movement direction (indicated by an arrow in the figure) as shown in the figure.

Therefore, the corresponding marks A, B and C, D of the photoelectronic transfer mask 2 need to be formed offset as shown in the figure.

Refer again to FIGS. 3a and 3b. Position information of marks A, B, C, and D on photoelectronic transfer mask 2 is stored in mask mark position storage means 1 (see FIGS. 1 and 2). The photoelectronic transfer mask 2 and the wafer 8 are moved in the same direction (indicated by two arrows in figure c) at the same speed, and marks A, B, slit S, mark a,
. (see Figure 2). The photoelectronic transfer mask 2 and the wafer 8 are further moved, and the positions of the marks C8 and dm on the wafer 8 are also stored in the wafer mark position storage means 12 (see FIGS. 1 and 2).
is memorized. Based on the information from the mask mark position storage means 1 (see FIGS. 1 and 2) and the wafer mark position storage means 12 (see FIGS. 1 and 2), the calculation means 1
3 (see FIGS. 1 and 2), transfer conditions such as electric field and magnetic field at marks a8, bn, cs, and dM of wafer 8, and correction conditions for correcting gain, offset, rotation, and trapezoidal deformation are determined. Calculate and further mark a
Transfer conditions and correction conditions in the area sandwiched between the line connecting NsbN and the line connecting marks C8 and d8 are calculated using interpolation.

Specifically, the transfer conditions for transferring marks A and B on the mask to marks a, ..., b, on the wafer are T +
(χ,), and marks C and D are marks CN5 on the wafer.
If the transfer condition for transferring to dH is T z (χN), then the position of the n light area corresponding to the slit is mark C
The exposure condition T at the point of distance χ (the distance between marks a, , t+, and mark CHs d N is 1) from N, d, 4 is T-(1-χ)T1(χN)+χT, ( It is obtained from χ,). These transfer conditions are manually input to the focusing system control means 9 (see FIGS. 1 and 2), and the correction conditions are input to the electric field/magnetic field control means 7 (see FIGS. 1 and 2).

When exposing a pattern, if a light beam is irradiated while moving the photoelectronic transfer mask 2 and the wafer 8 in the same direction and at the same speed, the focusing system control means 9 (first
The transfer conditions are automatically controlled by the electric field/magnetic field control means 7 (see Figs. 1 and 2), and the correction conditions are automatically controlled in accordance with each region of the pattern. The entire range is properly exposed and transferred.

When exposing and transferring a plurality of patterns, the above steps may be repeated for each pattern, but first the mark positions of all wafer patterns are detected and stored in the wafer mark position storage means 12 (Figs. 1 and 2). (see),
When exposing, the calculation means 13 (first
The transfer conditions are calculated in the focusing system control means 9 (see Figs. 1 and 2), and the correction conditions are sent to the electric field/magnetic field control means 7 (see Figs. 1 and 2). It is also possible to expose all patterns consecutively by inputting the following information (see ).

Furthermore, exposure conditions for transfer conditions and correction conditions corresponding to all areas may be determined, and exposure may be performed based on the exposure conditions while moving the slit position.

In particular, see FIG. 2. Permanent magnets are used in the magnetic field generating means 5 and are arranged above and below the vacuum chamber 14, and the structure is such that the exposing light is irradiated onto the surface of the photoelectronic transfer mask 2, and the other structure is the same as in the first example. be the same.

The second example is characterized in that there is less possibility that light will be directly incident on the wafer 8, and therefore there is less possibility that the wafer 8 will be undesirably exposed to light. The photoelectronic transfer method using the photoelectronic transfer device having this configuration is the same as in the first example.

[Effects of the Invention] The photoelectronic transfer device according to the present invention provides marks at the front and rear of the movement direction for each pattern on the wafer and the photoelectronic transfer mask exposed by the photoelectronic transfer device, and the mark position information on the photoelectronic transfer mask. is stored in the mask mark position storage means, the mark position of the wafer is read by the mark position reading means prior to exposure and stored in the wafer mark position storage means, and upon photoelectronic transfer, the wafer mark position is stored in the mask mark position storage means and the wafer mark position. Based on the positional information stored in the storage means, interpolation is used to calculate transfer conditions corresponding to each area of each pattern and correction conditions for correcting gain, offset, rotation, and trapezoidal deformation. Since exposure is performed while controlling the focusing system control means using the calculated transfer conditions and the electric field/magnetic field control means using the correction conditions, the photoelectronic transfer method using this photoelectronic transfer device is According to the above, by simply aligning the mask and wafer using the above marks, the transfer conditions and correction conditions for each area of the pattern are calculated, and each area of the pattern can be exposed continuously and properly. Can be transcribed.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a photoelectronic transfer device according to a first embodiment of the present invention. FIG. 2 is a configuration diagram of a photoelectronic transfer device according to a second embodiment of the present invention. FIGS. 3a and 3b are explanatory diagrams illustrating mark alignment on a wafer. FIG. 4 is a configuration diagram of a photoelectronic transfer device according to the prior art. FIG. 5 is a conceptual diagram of the photoelectronic transfer exposure method. FIGS. 6a and 6b are diagrams showing the positions of marks placed on the photoelectronic transfer mask and the wafer. 1... Light beam generating means, 2... Photoelectron transfer mask, 3 ・ ・ 4 ・ ・ 5 ・ ・ 6 ・ ・ 7 ・ ・ 8 ・ ・ 9 ・ 10 ・ ・ 1] ・ ・ 12 ・ 13・ 14 ・ ・ 15 ・ ・ 21 ・ 22 ・ 23 ・ 24 ・ 81 means, medium wafer, - focusing system control means, - mark position reading means, - mask mark position storage means, - wafer mark position storage means, - calculation means, - vacuum chamber, - control? 1] Part, - Transparent substrate, - Ultraviolet absorbing couple, - Film made of photoelectron emitting material, - Electron flow, - Electron beam sensitizer.

Claims (1)

[Scope of Claims] [1] A light source (1), an exposure pattern area having a pattern that emits electrons upon receiving light from the light source (1), and a first area provided on both sides of the exposure pattern area;
photoelectronic transfer mask (2) having a second matching pattern;
a wafer support (6) that supports a wafer (8) that has been exposed to the emitted electrons and has corresponding first and second alignment patterns; ) and having a slit through which the electrons can pass, the photoelectronic transfer mask (2) and the wafer support (6).
and a driving means (M) for changing the relative position of the electrode plate with slits (3); and the correspondence between the first and second alignment patterns on the photoelectronic transfer mask (2) and the wafer (8). 1st, 2nd
detects the relative position of the photoelectronic transfer mask (2) and the matching pattern, calculates the first exposure condition for the first matching pattern and the second exposure condition for the second matching pattern, and When exposing the area corresponding to the slit while changing the relative position between the wafer support base (6) and the slit electrode plate (3), the area to be exposed and the first
, a calculation means (13) for determining the exposure conditions of the exposed area from the relative distance to the second matching pattern and the first and second exposure conditions; and based on the output of the calculation means (13), the electron A photoelectronic transfer device characterized in that it has an electric field/magnetic field control means (7) for correcting. [2] A light source (1), an exposure pattern area having a pattern that emits electrons upon receiving light from the light source (1), and a first area provided on both sides of the exposure pattern area;
photoelectronic transfer mask (2) having a second matching pattern;
a wafer support (6) that supports a wafer (8) that has been exposed to the emitted electrons and has corresponding first and second alignment patterns; ) and having a slit through which the electrons can pass, the photoelectronic transfer mask (2) and the wafer support (6).
and a driving means (M) that changes the relative position of the electrode plate with slits (3), and the first and second matching patterns on the photoelectronic transfer mask (2) and the wafer. (8) Detecting the relative position with the corresponding first and second matching patterns above, and determining the first and second exposure conditions for the first and second matching patterns based on the relative position. and the step of obtaining each, and when performing exposure while moving the slit position by the driving means (M), based on the exposure conditions obtained based on the position of the exposure area corresponding to the slit position from the first and second exposure conditions. , a step of irradiating the wafer with the electrons. [3] When the first and second exposure conditions are T_1 and T_2, the exposure condition T of the exposure area corresponding to the slit position is T=(1-χ)T_1+χT_2 (however, the first and second exposure conditions are Let the distance between matching patterns be 1,
It is assumed that the position of the exposure area is at a distance of χ from the second matching pattern. ) The photoelectronic transfer method according to claim 2, characterized in that: