JP2796121B2 - Electron beam drawing method and electron beam drawing apparatus - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam lithography technique, and more particularly to a technique which is effective when applied to an electron beam exposure technique in a manufacturing process of a semiconductor integrated circuit device.

[Conventional technology]

For example, in the manufacturing process of a semiconductor integrated circuit device, in order to cope with the miniaturization of the circuit pattern due to the further integration of the semiconductor integrated circuit device, instead of the conventional light, the circuit pattern is transferred with higher resolution and precision. An electron beam exposure method capable of performing the above has been used.

By the way, such electron beam exposure methods include, for example, Nikkan Kogyo Shimbun, published on January 30, 1988, edited by the 132nd Committee of the Japan Society for the Promotion of Science, “Electron / Ion Beam Handbook”, P424-P435, etc. As described in the document, while roughly moving, while continuously moving the sample stage on which the semiconductor wafer is mounted in one predetermined direction, while scanning the electron beam with a small amplitude in a direction intersecting the sample stage, A raster scan method that draws a desired figure by controlling the irradiation and stop of irradiation of the electron beam, and a small converged electron beam can be positioned freely within a deflectable area several mm square around the optical axis of the electron optical system There is a vector scanning method in which a drawing operation is performed, and a sample table on which an object to be drawn is sequentially moved to transfer a desired figure.

By the way, in the latter vector scan method, enlarging the deflectable area around the optical axis of the electron optical system reduces the number of movements of the sample stage, which accounts for a large proportion of the drawing operation time, and reduces the unit time. This is important from the viewpoint of, for example, increasing the number of semiconductor wafers to be drawn.

On the other hand, when the deflectable area is enlarged, the error of the deflection control becomes larger at the periphery of the deflectable area farther from the optical axis of the electron optical system. It is indispensable to secure.

For this reason, conventionally, a reference mark is provided on a sample stage whose feed amount is precisely controlled by a laser length measurement technique or the like, and the reference mark is positioned at a plurality of representative points in a deflectable area, and the reference mark is used. Aiming to control the deflection of the electron beam, detecting secondary electrons generated from the reference mark at that time, detecting the position of the reference mark by the principle of a scanning electron microscope, and using the detected position and the feed amount of the sample stage Is calculated for each representative point, and substituted into a predetermined correction formula based on the deflection control theory of the electron beam to calculate a correction coefficient that minimizes the error. It is conceivable to control the deflection amount of the electron beam by a theoretical formula using a coefficient.

[Problems to be solved by the invention]

However, in the above-described conventional technique, the deflection amount is calibrated with respect to the average of the errors of a plurality of representative points in the deflectable area. The present inventor has found that there is a problem that calibration is not performed.

SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam drawing method capable of improving the accuracy of the deflection position of an electron beam.

Another object of the present invention is to provide an electron beam lithography apparatus capable of improving the accuracy of electron beam deflection position.

Still another object of the present invention is to provide an electron beam writing method capable of increasing the number of objects to be written per unit time by enlarging a deflectable area.

Still another object of the present invention is to provide an electron beam lithography apparatus capable of increasing the number of objects to be written per unit time by expanding a deflectable area.

The above and other objects and novel features of the present invention are as follows.
It will be apparent from the description of this specification and the accompanying drawings.

[Means for solving the problem]

The outline of a typical invention disclosed in the present application is briefly described as follows.

That is, the electron beam lithography method according to the present invention is provided on a part of the sample stage for performing the positioning operation of the object to be drawn, and is provided in the first deflectable area of the electron beam controlled by the electron optical system.
And detecting the difference between the reference mark detection position obtained by capturing charged particles generated from the reference mark positioned at the representative point and the actual positioning position of the first representative point based on the amount of movement of the sample stage. A first step of obtaining a deflection control correction coefficient of the electron beam by the electron optical system, and a deflection control calibrated by using the deflection control correction coefficient, whereby the electron beam is positioned at an arbitrary second representative point in the deflectable area. The difference between the reference mark detection position obtained by positioning the electron beam on the reference mark and the actual position of the second representative point based on the amount of movement of the sample table is calculated for each of the plurality of second representative points. And a remaining correction for proportionally dividing the deflection position of the electron beam by the deflection control calibrated using the deflection control correction coefficient based on the positional relationship between the deflection position and the second representative point. By correcting using the amount, Third for drawing operation for drawing product
The drawing operation is performed through the steps (1) and (2).

Further, an electron beam lithography apparatus according to the present invention is provided with a reference table, a sample stage for performing a positioning operation of a placed workpiece, an electron beam source for irradiating the workpiece with an electron beam, and an electron beam source. An electron optical system that controls the presence / absence and deflection amount of lines to the object to be drawn and the shape of the photoelectron surface, and generates control information to be given to the electron optical system based on the target graphic information to be drawn on the object to be drawn 3. An electron beam drawing apparatus comprising: a control unit for performing a drawing operation by an electron beam drawing method according to claim 1; and a charged particle detection unit for detecting a charged particle generated from a reference mark by irradiation of an electron beam. It is something to do.

[Action]

According to the electron beam lithography method of the present invention described above, finer errors that could not be avoided by deflection control based on a mere electron beam deflection control theoretical formula can be accurately removed by apportioning the remaining correction amount, The deflection position accuracy of the electron beam can be improved.

As a result, the deflectable area of the electron beam can be expanded without worrying about the deflection position error of the electric wire, and the drawing range at a single positioning position of the sample table on which the object to be drawn is placed is expanded. As a result, the number of movements of the sample stage, which accounts for a large proportion of the time required for the writing operation, is reduced, and the number of objects to be written per unit time can be increased without impairing the writing accuracy.

Further, according to the electron beam lithography apparatus of the present invention described above, it is possible to accurately remove finer errors inevitable by deflection control based on a mere theory of electron beam deflection control by apportioning the remaining correction amount. As a result, the deflection position accuracy of the electron beam can be improved.

As a result, the deflectable area of the electron beam can be enlarged without worrying about the deflection position error of the electron beam, and the drawing range at a single positioning position of the sample table on which the object to be drawn is placed is expanded. As a result, the number of movements of the sample stage, which accounts for a large proportion of the time required for the writing operation, is reduced, and the number of objects to be written per unit time can be increased without impairing the writing accuracy.

〔Example〕

Hereinafter, an electron beam lithography technique according to an embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a flowchart showing an example of an electron beam drawing method according to an embodiment of the present invention. FIGS. 2 to 7 are explanatory diagrams showing an example of the execution procedure, and FIG. FIG. 2 is a block diagram illustrating an example of a configuration of an electron beam writing apparatus according to the present embodiment.

First, the configuration of an electron beam lithography apparatus in which the electron beam lithography method of the present embodiment is performed will be described.

A semiconductor wafer 2 having a surface coated with an electron-sensitive resist is placed on a sample table 1 made of an XY table or the like movable in a horizontal plane.

The amount of displacement of the sample stage 1 is precisely specified by a laser length meter (not shown) or the like.

An electron beam source 3 is provided above the sample stage 1 so that an electron beam 4 is emitted toward the semiconductor wafer 2 placed on the sample stage 1.

At a position surrounding the path of the electron beam 4 from the electron beam source 3 to the semiconductor wafer 2, an electron optical system including a molding device 5, a sub deflector 6, a main deflector 7, an objective lens 8, and the like is provided. .

Then, as shown in FIG. 5, the electron beam 4 emitted from the electron beam source 3 is transmitted to an arbitrary field F _i within the deflectable area Z of the electron beam 4 by the main deflector 7 on the surface of the semiconductor wafer 2. a plurality of sub-fields f _i1 constituted by dividing a, f _i2, ... reference position S _i1 in each of f _in,
The main deflection for positioning the electron beam 4 to S _i2 ,... S _in by the main deflector 7 and focusing by the objective lens 8 are performed, and the shape of the photoelectron surface of the electron beam 4 by the shaper 5 And the sub-field f _i1 ,
By superimposing the sub-deflection for positioning inside f _i2 ,... f _in , a predetermined circuit pattern is drawn by the electron beam 4 over the entire area of an arbitrary field F _i ,
An exposure process for exposing the electron beam resist applied to the surface of the semiconductor wafer 2 to a predetermined circuit pattern by the electron beam 4 is performed.

On the other hand, the shaping device 5 is connected to a shaping signal generator 10 via a shaping device controller 9, and the sub deflector 6 and the main deflector 7 are connected to a sub deflector controller 11 and a main deflector controller 12. Are connected to the position signal generator 13 via the
Is connected to the position signal generator 13 via the objective lens controller 14.

The shaping signal generator 10 and the position signal generator 13 are connected to an arithmetic circuit 15.

The arithmetic circuit 15 is connected to the control computer 17 via a buffer memory 16 made of a semiconductor memory that can be accessed at high speed, and is directly connected to and controlled by the control computer 17. .

The control computer 17 is connected, for example, to a drawing data storage unit 18 composed of a large-capacity porcelain disk or the like and storing a large amount of graphic data to be transferred to the semiconductor wafer 2. The predetermined graphic data is transferred to the buffer memory 16 as necessary.

In the arithmetic circuit 15, control information on the deflection amount of the electron beam 4 and the shape of the photoelectron surface is calculated based on the graphic data held in the buffer memory 16, and the position signal generator 13, the main deflector control The control of the main deflector 7 and the objective lens 8 via the section 12 and the objective lens control section 14, the control of the sub deflector 6 via the position signal generating section 13 and the sub deflector control section 11, and the formation signal The control of the molding machine 5 is performed via the generation unit 10 and the molding machine control unit 9.

The sample stage 1 is controlled by a control computer via a sample stage controller 20.
As shown in FIG. 6, a plurality of unit element forming areas C ₁ , C ₂ ,... Arranged regularly on the surface of the semiconductor wafer 2 in a predetermined rectangle are arranged as shown in FIG. An operation of positioning an arbitrary region extending over one or more of C _n below the deflectable region Z by the main deflector 7 is performed.

That is, in the case of this embodiment, as shown in FIG. 7, for example, each unit element forming region C _i is equally divided into four fields F _i , and each of the reference positions O _i while sequentially position the optical axis of the optical system, rendering the work in the relevant field F _i is adapted to be performed.

Further, in the vicinity of the semiconductor wafer 2 placed on the sample stage 1, a reference mark M formed on a part of the sample stage 1, secondary electrons generated by irradiation of the semiconductor wafer 2 with the electron beam 4, and the like. And a detector 19 for detecting the charged particle of the electron optical system. The position of the reference mark M with respect to the optical axis of the electron optical system is detected by the well-known principle of a scanning electron microscope.

Hereinafter, the operation of the electron beam lithography technique in the present embodiment will be described.

First, prior to a normal drawing operation, by driving the sample stage 1 as appropriate, as shown in Figure 4, the first representative point m _i plurality of internal deflectable region Z by electron optics
While each positioning successive reference marks M, based on the amount of movement of the sample stage 1, which is precisely grasped by laser length measuring meter, electron beam aimed at the first representative point m _i 4
Position information Xm _i , Ym _i
To control the deflection of the electron beam 4, and at this time, form a secondary electron image of the reference mark M based on the amount of secondary electrons from the reference mark M obtained via the detector 19, Find the position of the electron optical system with respect to the optical axis.

Then, the position information Xm _i ,
And Ym _i, the difference between the position based on the secondary electron image of the reference mark M, determined as a strain amount ΔXm _i, ΔYm _i in deflection control of the electron beam 4 by the electron optical system, is ideal respective parts of the electron optical system as in the state, for _{example, ΔXm i = a 0 + a} 1 Xm i + a 2 Ym i + a 3 Xm i 2 + a 4 Xm i Ym i + a 5 Ym i 2 + a 6 Xm i 3 + a 7 Xm i 2 Ym i + a 8 Xm _i Ym _i ² + A ₉ Ym _i ³ (1) ΔYm _i = B ₀ + B ₁ Xm _i + B ₂ Ym _i + B ₃ Xm _i ² + B ₄ Xm _i Ym _i + B ₅ Ym _i ² + B ₆ Xm _i ^{3 _{+ B 7 Xm i 2 Ym i}} + B 8 Xm i Ym i 2 + B 9 Ym i 3 ΔXm i which is expressed as (2), with respect _{ΔYm i, ΔXm i = 0,} ΔYm i =
Factor A ₀ as closest to ₀ ~A _9, B 0 ~B ₉ the control computer 17 is calculated.

Here, in the conventional case, the control computer 17 calculates the coefficient
A _{0 to} A ₉ and B _{0 to} B ₉ are provided to the position signal generator 13, which receives the position control information X _i , Y _{i of the} main deflector 7 from the arithmetic circuit 15, X _i ′ = X _i + A ₀ + A ₁ X _i + A ₂ Y _i + A ₃ X _i ² + A ₄ X _i Y _i + A ₅ Y _i ² + A ₆ X _i ³ + A ₇ X _i ² Y _i + A ₈ X _i Y _{i ^{2 + A 9 Y i 3 ···}} (3) Y i '= X i + B 0 + B 1 X i + B 2 Y i + B 3 X i 2 + B 4 X i Y i + B 5 Y i 2 + B 6 X i 3 + B ₇ X _i ² Y _i + B ₈ X _i Y _i ² + B ₉ Y _i ³ After performing the correction represented by (4), X _i ′ and Y _i ′ are changed to the main deflector controller 12 and the objective. It was provided to the lens control unit 14 to control the main deflector 7 and the objective lens 8.

However, such a conventional correction method can perform the correction with sufficient accuracy when the control of the electron beam 4 by the electron optical system has only distortion that can be theorized by electro-optics. Is affected by the processing accuracy of the main deflector 7 and the objective lens 8 and the like and uncertain factors such as a magnetic field and an electric field in a passage of the electron beam 4 from the forming unit 5 to the semiconductor wafer 2. The deflection range by the device 7 is several
In the case of mm □, a correction residual of about 0.1 μm occurs,
There is a problem that high-precision drawing of a desired figure cannot be guaranteed.

Such an uncorrected portion becomes particularly remarkable in the peripheral portion of the deflectable region Z where the amount of deflection of the electron beam 4 becomes large.

Therefore, in the case of the present embodiment, as shown in FIG.
At the representative point m _i ′, the control computer 17 calculates the above equation (1)
And the deflection control of the electron beam 4 is performed while performing the correction shown in (2) to detect the positions of the reference marks M which are sequentially positioned at the plurality of second representative points _mi '. The difference between the true position of the reference mark M and the true position of the reference mark M based on the amount of movement of the sample table 1 accurately grasped by the laser length meter or the like at the representative point m _i ′ is obtained by calculating the remaining correction amounts ΔXm _i ′ and ΔYm _i ′. It is stored in the arithmetic circuit 15.

Then, the arithmetic circuit 15 generates position information X _i , Y _i for each field F _i of the electron beam 4 to be given to the position signal generator 13 to the reference position O _{i at the time} of drawing an actual figure as described later. Equations (3) and (4) using the correction coefficients A _i and B _i
After obtaining the corrections X _i ′ and Y _i ′ as shown in FIG. 2, as shown in FIG. 2, arbitrary measurement points m _i ′ and m _{i +} surrounding the position information X _i and Y _i are further obtained. _{1 ', m i + 2'} , m i + 3 ', m i + 4' known remaining correction amount in _{(Xm i ', Ym i'} ), (Xm i + 1 ', Y
(mi _{+ 1} '), (Xmi _{+ 2} ', Ymi _{+ 2} '), (Xmi _{+ 3} ', Ymi _{+ 3} ')
Using, Where S ₁ = (X _i ′ −Xm _i ′) (Y _i ′ −Ym _i ′) S ₂ = (X _i ′ −Xm _i ′) (Ym _{i + 1} ′ −Y _i ′) S ₃ = ( _{X i + 2 '-X i'} ) (Ym i + 1 '-Y i') S 4 = (X i + 2 '-Xm i') arbitrary position obtained as (Y _i '-Ym _i') X _i ″, Y _i ″ obtained as X _i ″ = X _i ′ −ΔX _i Y _i ″ = Y _i ′ −ΔY _i using the residual correction amount in the deflection control to the information X _i , Y _i . used by controlling the main deflector 7 through the main deflector controller 12 to the position signal generator 13, obtained by applying a measure of one of the first representative point m _i on the theoretical formula only modified by the correction factor to eliminate the errors that can not be removed, and positioned relative to the reference position S _in the individual sub-fields f _i of the electron beam 4 with high accuracy.

That is, in the actual drawing operation, firstly, by moving the sample stage 1 as appropriate, any field F constituting the desired unit element forming region C _i of the semiconductor wafer 2 placed on the sample stage 1 the reference position O _i of _i is positioned on the optical axis of the electron optical system.

Thereafter, the arithmetic circuit 15 on the basis of the graphic data to be drawn to the field F _i that is transferred to the buffer memory 16 from the drawing data storage unit 18 via the control computer 17, a plurality of constituting the field F _i sub-field f _in
Reference position S _in accordance with the main deflector 7 of the electron beam 4 for performing the drawing operation in each of the said sub-field f _in
, Position information of the photoelectron surface of the electron beam 4 and position control information for the drawing operation by the sub deflector 6 are calculated.

Arithmetic circuit 15, obtained by performing the sub-field f _in each of the reference position S location information for _in X _i, Y _i in the aforementioned correction coefficient A _n and B _n correction based on the theoretical formula using the The position signal generation unit 13 and the main deflection unit use the position information X _i ″, Y _i ″ obtained by apportioning the remaining correction amounts ΔX _i , ΔY _i to the position information X _i ′, Y _i ′. through a vessel control unit 12, by controlling the main deflector 7 performs precise positioning of the respective reference position S _in the individual sub-fields f _i of electron beam 4,
Further, the control of the objective lens 8 via the position signal generation unit 13 and the objective lens control unit
Focus the electron beam 4 on f _i .

Thereafter, the arithmetic circuit 15 performs a sub-field f _i electron beam 4 in the sub-deflection based on the position information by the position signal generating unit 13 in the control of the sub-deflector 6 through the sub-deflector control unit 11, the sub-field f _i at the same time to perform a fine deflection control superimposed on the main deflection in the interior of the molded signal generator 10 based on the shape of the photoelectric surface, the shaper 5 via the shaper controller 9 controlling, by drawing a figure inside the object of the individual sub-fields f _i, is sensitive to the desired shape and electron beam sensitive resist is coated on the surface of the semiconductor wafer 2.

Thereafter, sequentially sample stage so as to match the optical axis of the electron optical system relative to the reference position O _i of the other adjacent fields F _i 1
And the same operation is repeated.

As described above, according to the electron beam drawing method of the present embodiment, the plurality of first representative points in the deflectable area Z of the electron beam 4
correction coefficient A _n as a measure of m _i by applying the theoretical formula to minimize error, after obtaining the B _n, further correction factor A _n, B _n
By measuring the second representative point _mi 'in the peripheral portion of the deflectable area Z again by the deflection control of the electron beam 4 corrected by using the above, the remaining correction amounts ΔX _i and ΔY _i are obtained. Since the actual drawing operation is performed by apportioning this value and correcting it again according to the positional relationship between the target control position and the second representative point _mi ', the accuracy in the deflection control of the electron beam 4 is greatly improved. .

As a result, each unit element formation region of the semiconductor wafer 2
Easily it can cope with further miniaturization of a circuit pattern constituting the semiconductor integrated circuit device formed on C _i.

Furthermore, deflectable region without freezing concern for deterioration of drawing information of a desired shape inside the Z, it is possible to enlarge the area of the deflectable region Z i.e. individual fields F _i, forming the individual unit elements improved degree of freedom of arrangement of the optimum field F _i corresponding to various dimensions of the regions Ci, the semiconductor wafer 2 that useless movement times of the sample table 1 is reduced, the writing (exposure) processed per unit time Can be increased.

Thereby, the productivity in the exposure step of the semiconductor wafer 2 by electron beam lithography in the manufacture of the semiconductor integrated circuit device is improved.

Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and can be variously modified without departing from the gist of the invention. Not even.

For example, the deflection control of the electron beam is not limited to the method of superimposing the sub deflection on the main deflection, but may be the control by simple single-stage deflection.

Further, the configuration of the electron beam lithography apparatus is not limited to the configuration illustrated in the above-described embodiment, but may be another configuration.

〔The invention's effect〕

The effects obtained by typical aspects of the invention disclosed in the present application will be briefly described as follows.

That is, according to the electron beam lithography method of the present invention, the electron beam lithography method is provided on a part of the sample stage for performing the positioning operation of the object to be drawn,
The reference mark detection position obtained by capturing charged particles generated from the reference mark positioned at the first representative point in the deflectable region of the electron beam controlled by the electron optical system and the movement amount of the sample stage A first step of detecting a difference between the first representative point based on the actual positioning position and an actual electron beam deflection control correction coefficient by the electron optical system, and performing calibration using the deflection control correction coefficient. The deflection control is performed based on a reference mark detection position obtained by positioning the electron beam on the reference mark positioned at an arbitrary second representative point in the deflectable area and the moving amount of the sample table. A second step of storing the difference between the actual position of the second representative point as a residual correction amount for each of the plurality of second representative points, and a deflection control calibrated using the deflection control correction coefficient. Deflection of the electron beam Correcting the position using the remaining correction amount proportionally distributed based on the positional relationship between the deflection position and the second representative point, thereby performing a drawing operation on the object to be drawn. Therefore, finer errors that could not be avoided by deflection control based on the theoretical formula of electron beam deflection control can be accurately removed by apportioning the remaining correction amount, and the electron beam deflection position accuracy is improved. Can be.

As a result, the deflectable area of the electron beam can be enlarged without worrying about the deflection position error of the electron beam, and the drawing range at a single positioning position of the sample table on which the object to be drawn is placed is expanded. As a result, the number of movements of the sample stage, which accounts for a large proportion of the time required for the writing operation, is reduced, and the number of objects to be written per unit time can be increased without impairing the writing accuracy.

Further, according to the electron beam lithography apparatus of the present invention, there is provided a sample stage provided with a reference mark and performing a positioning operation of a placed workpiece, and an electron beam source for irradiating the workpiece with an electron beam. An electron optical system that controls the presence / absence of irradiation of the electron beam on the object and a deflection amount and a shape of a photoelectron surface, and the electron optical system based on target graphic information to be drawn on the object. 3. An electron beam drawing apparatus comprising: a control unit for generating control information to be given to a target; and a charged particle detection unit for detecting a charged particle generated from the reference mark by irradiation of the electron beam. Since the drawing operation is performed by using the electron beam drawing method, finer errors that could not be avoided by mere deflection control based on the theoretical formula of electron beam deflection control can be accurately removed by apportioning the remaining correction amount. It can, it is possible to improve the deflection position accuracy of the electron beam.

As a result, the deflectable area of the electron beam can be enlarged without worrying about the deflection position error of the electron beam, and the drawing range at a single positioning position of the sample table on which the object to be drawn is placed is expanded. As a result, the number of movements of the sample stage, which accounts for a large proportion of the time required for the writing operation, is reduced, and the number of objects to be written per unit time can be increased without impairing the writing accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart showing an example of an electron beam drawing method according to an embodiment of the present invention. FIG. 2 is an explanatory diagram showing an example of a method of apportioning the remaining correction amount. The figure shows an example of the setting position of the second representative point in the deflectable area. FIG. 4 is an explanatory view showing the arrangement of the first representative point in the deflectable area. FIG. 6 is a perspective view showing an example of line deflection control. FIG. 6 is a plan view showing an example of the arrangement of unit element formation regions in a semiconductor wafer. FIG. FIG. 8 is a block diagram showing an example of the configuration of an electron beam drawing apparatus. 1 ... sample stage, 2 ... semiconductor wafer, 3 ... electron beam source,
4 ... Electron beam, 5 ... Former, 6 ... Sub-deflector, 7 ...
Main deflector, 8 Objective lens, 9 Molder controller, 10
... Molding signal generator, 11 ... Sub deflector controller, 12 ... Main deflector controller, 13 ... Position signal generator, 14 ... Objective lens controller, 15 ... Operation circuit, 16 ... Buffer memory, 17
... Control computer, 18 ... Drawing data storage unit, 19 ... Detector, 20 ... Sample stage control unit, M ... Reference mark, C _i ... Unit element formation area, F _i ... Field, f _i …… Sub field, O _i …… Reference position of field, S _in …… Sub
Reference position of field, Z... Deflectable area, m _i ... First representative point, m _i ′... First representative point, _An , B _n ... Correction coefficient, ΔXm _i , ΔYm _i. Deviation amount, ΔX _i , ΔY _i … remaining correction amount,
X _i , Y _i …… Position information, X _i ′, Y _i ′… Position information after correction by the correction coefficient obtained from the theoretical equation, X _i ″, Y _i ″ ... By the correction coefficient obtained from the theoretical equation Position information corrected by apportioning the remaining correction amount to the corrected position information.

Continuation of the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/027 G03F 7/20 504 G03F 7/20 521

Claims (3)

(57) [Claims] 1. A reference mark which is provided on a part of a sample stage for performing a positioning operation of an object to be drawn and is positioned at a first representative point in a deflectable area of an electron beam controlled by an electron optical system. Detecting a difference between a reference mark detection position obtained by capturing charged particles to be measured and an actual positioning position of the first representative point based on the amount of movement of the sample stage, and using the electron beam by the electron optical system. To obtain the deflection control correction coefficient of
And a reference obtained by positioning the electron beam at the reference mark positioned at an arbitrary second representative point in the deflectable area by the deflection control calibrated using the deflection control correction coefficient. A second step of storing a difference between a mark detection position and an actual position of the second representative point based on the moving amount of the sample table as a residual correction amount for each of the plurality of second representative points; A deflection position of the electron beam by deflection control calibrated using a deflection control correction coefficient is corrected using the residual correction amount proportionally distributed based on a positional relationship between the deflection position and the second representative point. And a third step of performing a drawing operation on the object to be drawn. 2. The method according to claim 1, wherein the drawing operation on the object to be drawn by the electron beam is performed by dividing a field that is equal to the deflectable area or that is formed by dividing the deflectable area into a plurality of sub-fields. The main deflection for positioning the electron beam with respect to the reference position of the sub-field and the sub-deflection for controlling the arrival position of the electron beam in each sub-field are performed by superimposing, and the main deflection is performed. 2. The electron beam writing method according to claim 1, wherein the correction is performed by the remaining correction amount. 3. A sample stage having a fiducial mark for performing a positioning operation of a placed object to be drawn, an electron beam source for irradiating the object with an electron beam, and the object to be drawn by the electron beam. An electron optical system for controlling whether or not to irradiate an object, a deflection amount, and a shape of a photoelectron surface; and a control for generating control information to be given to the electron optical system based on target graphic information to be drawn on the object to be drawn. Means, and an electron beam drawing apparatus comprising charged particle detection means for detecting charged particles generated from the reference mark by irradiation of the electron beam,
An electron beam lithography apparatus which performs a drawing operation using the electron beam lithography method according to claim 1.