JPS6054917B2 - 半導体の浮遊帯域溶融を開始する方法 - Google Patents

半導体の浮遊帯域溶融を開始する方法

Info

Publication number
JPS6054917B2
JPS6054917B2 JP53081412A JP8141278A JPS6054917B2 JP S6054917 B2 JPS6054917 B2 JP S6054917B2 JP 53081412 A JP53081412 A JP 53081412A JP 8141278 A JP8141278 A JP 8141278A JP S6054917 B2 JPS6054917 B2 JP S6054917B2
Authority
JP
Japan
Prior art keywords
induction heating
temperature
semiconductor material
coupled
floating zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53081412A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5418477A (en
Inventor
ノエル・デ・レオン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topsil GlobalWafers AS
Original Assignee
Topsil AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topsil AS filed Critical Topsil AS
Publication of JPS5418477A publication Critical patent/JPS5418477A/ja
Publication of JPS6054917B2 publication Critical patent/JPS6054917B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)
JP53081412A 1977-07-07 1978-07-04 半導体の浮遊帯域溶融を開始する方法 Expired JPS6054917B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DK3063/77 1977-07-07
DK306377AA DK142586B (da) 1977-07-07 1977-07-07 Apparat til zonesmeltning af en halvlederstav.

Publications (2)

Publication Number Publication Date
JPS5418477A JPS5418477A (en) 1979-02-10
JPS6054917B2 true JPS6054917B2 (ja) 1985-12-02

Family

ID=8118662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53081412A Expired JPS6054917B2 (ja) 1977-07-07 1978-07-04 半導体の浮遊帯域溶融を開始する方法

Country Status (4)

Country Link
US (1) US4292487A (US08063081-20111122-C00044.png)
JP (1) JPS6054917B2 (US08063081-20111122-C00044.png)
DE (1) DE2829772A1 (US08063081-20111122-C00044.png)
DK (1) DK142586B (US08063081-20111122-C00044.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600672A (nl) * 1986-03-17 1987-10-16 Philips Nv Generator voor hoogfrequent verhitten met een impedantie-orgaan parallel aan het stuurelement in de kathodeketen van de elektronenbuis van het oscillatorcircuit.
JPH0696478B2 (ja) * 1989-01-26 1994-11-30 科学技術庁無機材質研究所長 単結晶自動育成法
US6943330B2 (en) * 2003-09-25 2005-09-13 3M Innovative Properties Company Induction heating system with resonance detection
US7696458B2 (en) * 2005-06-03 2010-04-13 Illinois Tool Works Inc. Induction heating system and method of output power control
US7572334B2 (en) 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2916593A (en) * 1958-07-25 1959-12-08 Gen Electric Induction heating apparatus and its use in silicon production
US3064109A (en) * 1959-01-15 1962-11-13 Ohio Crankshaft Co Automatic control of induction heating circuits having a magnetic load
NL135666C (US08063081-20111122-C00044.png) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
NL258961A (US08063081-20111122-C00044.png) * 1959-12-23
DE1209551B (de) * 1961-12-07 1966-01-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines stabfoermigen Halbleiterkoerpers miteiner Steuerung seines Durchmessers- bzw. Querschnittsverlaufs und Vorrichtung zur Durchfuehrung dieses Verfahrens
NL6508506A (US08063081-20111122-C00044.png) * 1965-07-02 1967-01-03
US3567895A (en) * 1969-08-11 1971-03-02 Ibm Temperature control system
DE2220519C3 (de) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben
US4032740A (en) * 1975-04-07 1977-06-28 Illinois Tool Works Inc. Two-level temperature control for induction heating
US4093839A (en) * 1976-04-02 1978-06-06 Ajax Magnethermic Corporation Apparatus and method for inductively heating metallic tubing having an upset portion
US4078168A (en) * 1976-09-17 1978-03-07 Flinn & Dreffein Engineering Company Power control circuit

Also Published As

Publication number Publication date
US4292487A (en) 1981-09-29
DE2829772A1 (de) 1979-01-25
DK142586B (da) 1980-11-24
DK142586C (US08063081-20111122-C00044.png) 1981-07-27
JPS5418477A (en) 1979-02-10
DK306377A (US08063081-20111122-C00044.png) 1979-01-08

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