JPS6054426A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS6054426A
JPS6054426A JP58162037A JP16203783A JPS6054426A JP S6054426 A JPS6054426 A JP S6054426A JP 58162037 A JP58162037 A JP 58162037A JP 16203783 A JP16203783 A JP 16203783A JP S6054426 A JPS6054426 A JP S6054426A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
silicon
crystal layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58162037A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136973B2 (enExample
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58162037A priority Critical patent/JPS6054426A/ja
Publication of JPS6054426A publication Critical patent/JPS6054426A/ja
Publication of JPH0136973B2 publication Critical patent/JPH0136973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2926—
    • H10P14/3818—
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3411—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3422—
    • H10P14/3458—
    • H10P14/382—

Landscapes

  • Recrystallisation Techniques (AREA)
JP58162037A 1983-09-05 1983-09-05 半導体素子の製造方法 Granted JPS6054426A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58162037A JPS6054426A (ja) 1983-09-05 1983-09-05 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58162037A JPS6054426A (ja) 1983-09-05 1983-09-05 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6054426A true JPS6054426A (ja) 1985-03-28
JPH0136973B2 JPH0136973B2 (enExample) 1989-08-03

Family

ID=15746876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58162037A Granted JPS6054426A (ja) 1983-09-05 1983-09-05 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6054426A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895687A (ja) * 1981-11-30 1983-06-07 Nec Corp 薄膜の結晶粒成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895687A (ja) * 1981-11-30 1983-06-07 Nec Corp 薄膜の結晶粒成長方法

Also Published As

Publication number Publication date
JPH0136973B2 (enExample) 1989-08-03

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