JPS6053057A - Semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a semiconductor device fitted for large power by improving the semiconductor device so as to bond an aluminum wire with a guide ring. CONSTITUTION:A guide ring 3 consists of an insulator such as ceramics, and a silver solder material 14 is brazed onto the guide ring 3. Gate aluminum electrodes 6 on the semiconductor element 5 side and the silver solder materials 14 on the guide ring 3 are wired alternately by the bonding of aluminum wires 7. Consequently, a semiconductor element 5 is fixed more positively than conventional devices. An insulating tube 10 as seen in conventional devices is unnecessitated because the electrodes are taken out directly to the outside by gate pipes 11. Since the silver solder material 14 sections and the gate pipes 11 are connected by silver lead wires 18, currents which can be flowed are made larger than conventional devices, and trouble on an assembly is reduced.

Description

[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor device, and particularly to a semiconductor device. ``It concerns the package of the Oyster conductor device.

[Prior art]

Conventionally, there has been a semiconductor device of this type as shown in No. 1 [821]. In Fig. 1, 1 is a ceramic seal;
2 is a cathode flange, and 3 is a guide ring for fixing the semiconductor element in the bankage, which is mainly made of silicone rubber, pyton rubber, ceramic, etc. 4 is an insulating rubber for banzopation of the semiconductor device, 5 is a semiconductor device such as a thyristor or a transistor, and 6 is a gate fluoride which is an auxiliary electrode for controlling the main current of the semiconductor device 5.
LI℃ pole, 7 is an aluminum wire, 8 is a honding part where the aluminum wire 7 is bonded with an ultra-wave saving bonder, 9 is a cathode electrode such as a molybdenum plate, 10 is an insulation for taking out the aluminum wire 1 to the outside eC The tube 11 is a gate pipe.

In the conventional 7 assembly, after the guide ring 3 is attached to the ceramic seal 1, the exposed ζ semiconductor $5 is inserted. After that, on the gate aluminum electrode 6 of the semiconductor element 5 /
Bond Rumi Katsu 7 to the ultrasonic bonder. As shown in the first figure, this aluminum wire 7 is honed 1 until it goes around the outer periphery of the semiconductor element 5 at equal intervals (2 to 3 mm), then passed through the insulating tube 10 at the end, and then passed through the gate pipe 11.
Then, the tip of the gate pipe 11 is welded by arc welding.

FIG. 2 is an external side view of the semiconductor device 5 subjected to JIL stand-up as described above. In this figure, 12 is a copper block, 13 is an electrode copper block C, and the conventional semiconductor device is as follows: 1. Because of the structure, the following drawbacks can easily occur: ■ If a load such as tension is applied from the outside to the insertion end of the insulating tube 10 and the aluminum boat 7 during the temporary assembly process, it will break. This aluminum wire 7 had a diameter of φ03~0.
Since it is made of a material of about 50% and has been kneaded once, it is quite weak against tension. If the aluminum wire T breaks,
Since the gate and cathode are open, the semiconductor element 5
becomes unusable.

(2) When arc welding the aluminum wire 7 at the 1M section of the gate pipe 11, the melting point is as high as 660° C., so welding requires great skill and skill.

[Summary of the invention]

This invention eliminates the drawbacks of the conventional ones as mentioned above,
Furthermore, this was done in order to obtain highly reliable characteristics, and the aim is to provide a semiconductor device suitable for high power VC by improving the guide ring so that it can be attached to the guide ring. .

[Embodiments of the invention]

Figures 3, 4 and 5 show an embodiment of the present invention.
It is a f diagram. In these figures, 14 is a silver material, 1
5 is an insulating plate made of ceramic or the like, 16 in the B part is a spring, 11 is the above-mentioned screw 1G fixed at t61, and a silver lead wire 18
This is a spacer for adhering.

It should be noted that portions A and B in FIG. 5 are shown together in this figure at the same time, or in actual use, one or the other is used.

The feature of this invention is that the aluminum wire 7 is bonded to the guide ring 3.1, this solid ring 3 is made of an insulator such as ceramic;
A silver solder material 14 is soldered onto the top. The thickness of this lower material 14 is approximately 500 μm.

As shown in FIGS. 3 and 4, the aluminum wires I are wired by bonding alternately between the gate aluminum 11L poles 6 of the five semiconductor devices and the lower silver blades 14 of the guide ring 3, as shown in FIGS. As a result, the semiconductor element 5
can be fixed more reliably than conventional ones.

Furthermore, since the electrodes are directly taken out to the outside through the gate pipe 11 as shown in FIGS. 3 and 5, the insulating tube 10 is not visible as in the conventional case.

Furthermore, by using a silver lead of about 18 VC to connect the silver lower material 14 and the gate pipe 11, arc welding of the tip of the gate pipe 11 becomes much easier than in the conventional method. Furthermore, since the insulating tube 10 is no longer necessary, there is no longer any breakage of the aluminum wire 7, which was a concern in the past.

Furthermore, a structure like the 5VCA part of the embodiment shown in FIG. 5, or a pressure-jointed wood structure like the B part is also possible.

The h'4 construction in part A is made by bonding the silver lead gland 18 to the silver solder 14 using Cerasolzer or ultrasonic bonding, and then attaching it to the gate pipe 11.

This silver lead wire 18 has a diameter of φ03 to 0.5 of the aluminum wire 7.
Compared to this, the diameter can be increased to about 1.4 to 17 mm. It is particularly effective in reducing current density and impedance in GTO cylisks, which have a gate current of about 200 to 300 A.

The structure of part B is further implemented for the purpose of taking out the gate lead wire to the outside by using the press-contact structure. This method is particularly advantageous for the above-mentioned GTO thyristor, etc., since it is possible to change from a point contact like bonding to a surface contact.

The material of the insulating plate 15 is preferably ceramic. First, the ring shape is simpler and more reliable. The material of the guide lithography 3 is preferably ceramic. Moreover, if the semiconductor elements 5 are bonded as in this embodiment and then insulated with rubber such as RTV on the aluminum wires 7 which are alternately wired, the semiconductor elements 5 are particularly fixed.

Effective for insulation between gate and cathode.

Furthermore, from the side of the semiconductor element 5, aluminum electrodes, etc.
Since the area of the electrode in the figure increases by the amount of the silver electrode 14, the density of 4K a concentrated on the gate aluminum electrode 6 can be reduced. As described above, the present invention is effective for flat thyristors having a press-contact structure, particularly GTo thyristors and flat transistors.

In the above embodiment, a pressure-connected flat type transistor VC is used, but the same effects as in the above embodiment can be obtained even if a pressure-connected flat type transistor VC is applied. -1: Alternatively, the guide ring 3 may be used to position the semiconductor element 5 and the external container of the semiconductor device.

〔Effect of the invention〕

As explained above, the invention in V involves attaching a silver lowering material to the guide ring and performing aluminum wiring, and also uses a silver lead wire for taking out the external electrode, so that it can be flowed onto this silver lead wire. The current increases compared to the conventional one,
Further, there is an advantage that a cow conductor device without assembly tangles can be obtained.

[Brief explanation of drawings]

FIG. 1 is a plan view of a conventional semiconductor device, FIG. 2 is a side view of a thyristor with a pressure-welded flat structure, and FIG. FIGS. 4 and 5 are an enlarged sectional view showing an embodiment of the present invention, in which a plan view, a sectional view, and an example of the configuration of essential parts are simultaneously displayed in a tilted manner. In the figure, 1 is a ceramic seal, 2 is a cathode flange, 3 is a guide ring, 4 is an insulating rubber, 5 is a semiconductor element, 6 is a gate aluminum electrode, 7 is a luminaire, 8 is a bonding part, and 9 is a cathode '1ii ( ji, 11 k'i gate pipe, 12 is copper block, 13 is electrode body Glock, 1
4 is a silver lower material, 15 is an insulating plate, 16 is a spring, 17 is a spacer, and 18 is a silver lead wire. . In addition, are the same symbols in the figures the same -f or corresponding parts? show. Agent Masuo Oiwa (2 others) Figure 1 Figure 3 Figure 4

Claims (4)

[Claims] (1) A semiconductor element having at least two electrodes for directing the main current and an auxiliary electrode for controlling the main current, and an insulating guide ring supporting the outer periphery of the semiconductor element; A semiconductor device 1i characterized in that a part of the guide ring VC has a conductive annular part, and the auxiliary electrode of the semiconductor element is connected to the outside by relaying this annular part to form a 1fJT. '(,. (2) The auxiliary electrode of the semiconductor element and the conductive annular portion provided on the guide ring are electrically connected by a wire bonder. ) The semiconductor device described in item 2. (3) The conductive annular part provided on the guide ring and the outside? The fn pole is characterized in that it is electrically connected by a lead amount.
The semiconductor device according to item j. (4) The conductive annular portion provided on the guide ring and the external electrode are electrically contacted by pressing the lead amount.
1) The semiconductor device described in item 1).