JPS605218B2 - Heat balance jig - Google Patents

Heat balance jig

Info

Publication number
JPS605218B2
JPS605218B2 JP10048577A JP10048577A JPS605218B2 JP S605218 B2 JPS605218 B2 JP S605218B2 JP 10048577 A JP10048577 A JP 10048577A JP 10048577 A JP10048577 A JP 10048577A JP S605218 B2 JPS605218 B2 JP S605218B2
Authority
JP
Japan
Prior art keywords
heat balance
wafer
wafers
heat
balance jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10048577A
Other languages
Japanese (ja)
Other versions
JPS5434753A (en
Inventor
宏人 長友
哲也 高垣
政美 碓井
久夫 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10048577A priority Critical patent/JPS605218B2/en
Publication of JPS5434753A publication Critical patent/JPS5434753A/en
Publication of JPS605218B2 publication Critical patent/JPS605218B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 この発明は、半導体工業における各種の熱処理(例えば
拡散、酸化、アニール等)を行うための熱処理炉内に配
置して使用するに好適な熱バランス用治具に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat balance jig suitable for use by being placed in a heat treatment furnace for performing various heat treatments (for example, diffusion, oxidation, annealing, etc.) in the semiconductor industry.

従来、この種の熱処理炉では、第1図に示すように、炉
本体10内でガスGの入口側及び出口側にそれぞれ、ゥ
ェハホルダ12,20‘こ保持された熱バランス用ウェ
ハ、14,22を配置することが試みられている。
Conventionally, in a heat treatment furnace of this kind, as shown in FIG. Attempts are being made to place .

これらの熱バランス用ウェハ14,22を配置する目的
は、炉中央部に配置されるウェハホルダ16上の被処理
ウェハ18がガス雰囲気や温度分布に関し均一な作用を
受けるようにすることにある。通常、ウェハ14,22
としては、被処理ゥェハと寸法、形状、材質が同一であ
るシリコンウェハを数枚から数十枚配置するが、これら
のウェハ14,22は被処理ウェハ18の装填及び取出
しの度毎に装填及び取出されるので、その取扱いがめん
どうであり、その際にウェハがわれたり、たおれたりす
る不便があり、またウェハがわれたり、かけたりするこ
とにより炉内が汚染されるという不都合もある。この発
明の目的は、上記した従来技術の不便や不都合をなくし
た新規な熱バランス用沿具を提供することにある。
The purpose of arranging these heat balance wafers 14 and 22 is to ensure that the wafers 18 to be processed on the wafer holder 16 disposed at the center of the furnace are uniformly affected by the gas atmosphere and temperature distribution. Usually, wafers 14, 22
In this method, several to several tens of silicon wafers having the same size, shape, and material as the wafer to be processed are arranged, but these wafers 14 and 22 are loaded and unloaded each time the wafer to be processed 18 is loaded and unloaded. Since the wafer is taken out, it is troublesome to handle it, and there is the inconvenience that the wafer may break or fall during this process, and there is also the inconvenience that the inside of the furnace is contaminated due to the wafer being broken or thrown down. An object of the present invention is to provide a novel heat balance fixture that eliminates the inconveniences and inconveniences of the prior art described above.

この発明の一実施例の熱バランス用o大の,とするとこ
ろは、両端近傍にそれぞれ論切状溝を有するシリコン円
筒と、上記輪切状構内にそれぞれ挿入されたガス流しや
断用ウェハとの組合せにより、従来の多数枚の熱バラン
ス用ウェハの配列を模擬するようにした点にある。
One embodiment of the present invention has a silicon cylinder having circular grooves near both ends, and a gas flow and a cutting wafer each inserted into the circular grooves. This combination simulates the conventional arrangement of a large number of heat balance wafers.

この特徴によると、従来のウェハ配列と同様のガス雰囲
気ないし温度分布の均一作用が得られるのみならず、ウ
ェハの取扱いに伴う不便や不都合は殆どなくなり、特に
ゥェハの破損やそれに伴う炉内汚染は激減する。次に、
添付図面に示す実施例についてこの発明を詳述する。
This feature not only provides a uniform gas atmosphere or temperature distribution similar to that of conventional wafer arrays, but also eliminates most of the inconveniences and inconveniences associated with handling wafers, especially preventing wafer breakage and contamination in the furnace. Decrease sharply. next,
The invention will now be described in detail with reference to embodiments illustrated in the accompanying drawings.

第2図及び第3図は、この発明の一実施例による熱バラ
ンス用拾具を示すもので、第3図のローD線に沿う断面
が第2図に示されている。
2 and 3 show a heat balance pick-up tool according to an embodiment of the present invention, and a cross section taken along the low D line in FIG. 3 is shown in FIG.

これらの図において、熱バランス用捨具30は、両端近
傍にそれぞれ輪切状溝34,36が形成されているポリ
シリコンからなる円筒32と、輪切状溝34,36にそ
れぞれ挿入されたガス流しや断用シリコンウェハ38,
40とをそなえている。輪切状溝は上記溝34,36の
他に1又は複数設けてもよく、各々の溝にウェハを挿入
しうる。シリコン円筒32の底面には、炉内に配置した
際にころがらずに安定した状態を維持できるようにする
ため平坦部32aが形成されている。所望により、この
平坦部32aには、ピン孔を設け、炉内でピン止めしう
るようにしてもよい。また、平坦部32aに相当する部
分を分断した形にしてもよい。ゥェハ38,4川ま円筒
内をガス流が吹抜けないようにするとともに、被処理ウ
ヱハからの放射熱をさえぎる作用もする。ウェハ38,
4川ま被処理ゥェハと寸法、形状が同一であるのが好ま
しいが、必らずしも同一でなくてもよい。この発明によ
る熱バランス用捨具30は例えば第4図に示すようにし
て使用される。
In these figures, the heat balance tool 30 includes a cylinder 32 made of polysilicon with circular grooves 34 and 36 formed near both ends, and a gas cylinder 32 that is inserted into the circular grooves 34 and 36, respectively. Silicon wafer for sink or break 38,
It has 40. One or more ring-shaped grooves may be provided in addition to the grooves 34 and 36 described above, and a wafer can be inserted into each groove. A flat portion 32a is formed on the bottom surface of the silicon cylinder 32 in order to maintain a stable state without rolling when placed in a furnace. If desired, this flat portion 32a may be provided with a pin hole so that it can be pinned in the furnace. Alternatively, the portion corresponding to the flat portion 32a may be divided. It prevents gas flow from blowing through the cylinder of the wafers 38 and 4, and also functions to block radiant heat from the wafers to be processed. wafer 38,
Although it is preferable that the size and shape of the four wafers are the same as those of the wafer to be processed, they do not necessarily have to be the same. The heat balance sacrificial tool 30 according to the present invention is used, for example, as shown in FIG.

第4図におし、て、30A,30Bが熱バランス用捨具
であってLそれぞれ炉本体10におけるガスGの入口側
及び出口側に配置されている。治具30A,308の間
には、ウェハホルダ16に保持された被処理シリコンゥ
ェハ18が配置される。このようにウェハ18の両側に
熱バランス用捨臭30A,30Bを配置することにより
第1図の従釆の場合と同機なガス雰囲気及び温度分布の
均一化作用が得られることが確認されている。また、治
具30A,30Bの取扱いは容易で、しかもそれに伴う
ウヱハ38,40の破損はほとんどなかった。
In FIG. 4, reference numerals 30A and 30B denote heat balance waste tools, which are disposed at the inlet and outlet sides of the gas G in the furnace body 10, respectively. A silicon wafer 18 to be processed held by a wafer holder 16 is placed between the jigs 30A and 308. It has been confirmed that by arranging the heat balance filters 30A and 30B on both sides of the wafer 18 in this way, it is possible to obtain the same effect of homogenizing the gas atmosphere and temperature distribution as in the case of the slave shown in FIG. . Furthermore, the jigs 30A and 30B were easy to handle, and there was almost no damage to the wafers 38 and 40.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来の熱処理炉における炉内配置を示す断面
図、第2図は、この発明の一実施例による熱バランス用
拾具の断面図、第3図は、第2図の治具の側面図、第4
図は、この発明による熱バランス用拾具を使用した熱処
理炉の炉内配置を示す断面図である。 10・・・・・・熱処理炉本体、12,16,20・・
・・.・ウェハホルダ、14,22・・・・・・熱バラ
ンス用ウェハ、18・・・・・・彼処理ウェハ、30,
30A,30B……熱バランス用袷具、32……シリコ
ン円筒、34,36・・・・・・論切状溝、38,40
…・・・ガス流しや断用ウェハ。 素l図 弟Z図 衆3図 束4図
FIG. 1 is a sectional view showing the arrangement inside a conventional heat treatment furnace, FIG. 2 is a sectional view of a heat balance pick-up according to an embodiment of the present invention, and FIG. 3 is a sectional view of the jig shown in FIG. 2. side view, 4th
The figure is a sectional view showing the arrangement inside a heat treatment furnace using the heat balance pick-up according to the present invention. 10... Heat treatment furnace body, 12, 16, 20...
・・・.・Wafer holder, 14, 22... Wafer for heat balance, 18... Processing wafer, 30,
30A, 30B...Heat balance fitting, 32...Silicon cylinder, 34, 36...Rin-shaped groove, 38, 40
...Gas flow and cutting wafer. Souzu younger brother Zzushu 3zuzu 4zuzu

Claims (1)

【特許請求の範囲】[Claims] 1 熱処理炉内でガス入口側又はガス出口側に配置され
るべき熱バランス用治具であって、両端近傍にそれぞれ
輪切状溝が形成されているシリコン円筒と、このシリコ
ン円筒の前記輪切状溝の各々にそれぞれ挿入されたガス
流しや断用ウエハとを有することを特徴とする熱バラン
ス用治具。
1 A heat balance jig to be placed on the gas inlet side or the gas outlet side in a heat treatment furnace, which includes a silicon cylinder in which circular grooves are formed near both ends, and the silicon cylinder's circular grooves. A heat balance jig characterized by having a gas flow and a cutting wafer inserted into each of the shaped grooves.
JP10048577A 1977-08-24 1977-08-24 Heat balance jig Expired JPS605218B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10048577A JPS605218B2 (en) 1977-08-24 1977-08-24 Heat balance jig

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10048577A JPS605218B2 (en) 1977-08-24 1977-08-24 Heat balance jig

Publications (2)

Publication Number Publication Date
JPS5434753A JPS5434753A (en) 1979-03-14
JPS605218B2 true JPS605218B2 (en) 1985-02-08

Family

ID=14275222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10048577A Expired JPS605218B2 (en) 1977-08-24 1977-08-24 Heat balance jig

Country Status (1)

Country Link
JP (1) JPS605218B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198223A (en) * 1987-10-12 1989-04-17 Mitsubishi Metal Corp Method for diffusing impurity into silicon wafer
JPH0614480Y2 (en) * 1988-04-26 1994-04-13 信越石英株式会社 Semiconductor heat treatment equipment
JPH06151345A (en) * 1992-11-02 1994-05-31 Sumitomo Sitix Corp Film formation method and heat-dissipation preventing and flow-regulating jig

Also Published As

Publication number Publication date
JPS5434753A (en) 1979-03-14

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