JPS6050322B2 - thick film varistor - Google Patents

thick film varistor

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Publication number
JPS6050322B2
JPS6050322B2 JP55084282A JP8428280A JPS6050322B2 JP S6050322 B2 JPS6050322 B2 JP S6050322B2 JP 55084282 A JP55084282 A JP 55084282A JP 8428280 A JP8428280 A JP 8428280A JP S6050322 B2 JPS6050322 B2 JP S6050322B2
Authority
JP
Japan
Prior art keywords
zinc oxide
varistor
thick film
glass
oxide powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55084282A
Other languages
Japanese (ja)
Other versions
JPS5710204A (en
Inventor
昭宏 高見
稔 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55084282A priority Critical patent/JPS6050322B2/en
Publication of JPS5710204A publication Critical patent/JPS5710204A/en
Publication of JPS6050322B2 publication Critical patent/JPS6050322B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は酸化亜鉛粉粒体とこれを結合するためのガラス
フリットからなるバリスタ膜に一対の電極を付与した厚
膜バリスタに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thick film varistor in which a pair of electrodes is provided on a varistor film made of zinc oxide powder and glass frit for bonding the zinc oxide powder.

その目的はバリスタ膜内部に気泡等の構造欠陥を有さな
い電気特性の優れた厚膜バリスタを提供することにある
。従来から酸化亜鉛粉粒体とガラスフリットからなる厚
膜バリスタが開発され、微小、薄膜化部品として実用に
供されて来ている。
The purpose is to provide a thick film varistor with excellent electrical characteristics and no structural defects such as bubbles inside the varistor film. Thick film varistors made of zinc oxide powder and glass frit have been developed and put into practical use as microscopic and thin film components.

しかしながら、これらの厚膜バリスタはバリスタ膜内部
に気泡等を有しており、このことがバリスタ膜の有効面
積を小さくし、電気特性、特にパルス特性を悪くしてい
る。これは従来法において、酸化亜鉛粉粒体の平均粒径
が4〜10μmであり、ガラスフリットの平均粒径が4
〜7μmであることから、十分に混合しても、酸化亜鉛
粉粒体同志の接触部に空隙が生じ、またガラスフリット
がこの空隙部に入りこめず、焼付時にこの空隙部が溶融
ガラスに囲まれた状態で膨張し、ボードになるためと考
えられる。そこで本発明は従来の問題点を解決し、バリ
スタ膜内部に気泡等の構造欠陥を有さない電気特性、特
にパルス特性の優れた厚膜バリスタを提供しようとする
ものである。
However, these thick film varistors have bubbles and the like inside the varistor film, which reduces the effective area of the varistor film and deteriorates the electrical characteristics, especially the pulse characteristics. This is because in the conventional method, the average particle size of the zinc oxide powder is 4 to 10 μm, and the average particle size of the glass frit is 4 to 10 μm.
Since the diameter is ~7 μm, even if the zinc oxide particles are sufficiently mixed, voids will be created in the contact areas between the zinc oxide particles, and the glass frit will not be able to enter these voids, and the voids will be surrounded by molten glass during baking. This is thought to be because it expands and becomes a board when it is wet. Therefore, the present invention aims to solve the conventional problems and provide a thick film varistor which does not have structural defects such as bubbles inside the varistor film and has excellent electrical characteristics, particularly pulse characteristics.

この目的を達成するために、本発明では酸化亜鉛粉粒体
として、従来の平均粒径4〜10μmのものに加えて、
平均粒径2μm以下のものを準備し、これと平均粒径4
〜7μmのガラスフリットを十分混合し、バリスタペー
ストを作り、これを電気絶縁性基板の上に直接もしくは
電極を介して塗布し、ガラスの融点以上で焼付けバリス
タ膜を得る方法をとつた。
In order to achieve this objective, in the present invention, in addition to the conventional zinc oxide powder with an average particle size of 4 to 10 μm,
Prepare particles with an average particle size of 2 μm or less, and combine this with an average particle size of 4
A method was used in which a varistor paste was prepared by thoroughly mixing glass frit of ~7 μm, and this was applied onto an electrically insulating substrate directly or via an electrode to obtain a varistor film baked at a temperature higher than the melting point of the glass.

この方法により、従来、酸化亜鉛粉粒体の接触部にでき
ていた空隙部に、平均粒径2μm以下の非常に細かい酸
化亜鉛粉体が入ることにより稠密充填されることになり
、気泡等の構造欠陥が極めて少ない厚膜バリスタを得よ
うとしたものである。以下、図面に基つき説明する。
With this method, very fine zinc oxide powder with an average particle size of 2 μm or less enters the voids that were conventionally created in the contact area of zinc oxide powder, resulting in dense filling, which eliminates air bubbles, etc. This is an attempt to obtain a thick film varistor with extremely few structural defects. The following will explain based on the drawings.

第1図において、1は電気絶縁性で耐熱性を有する基板
、2と4は電極、3はバリスタ膜で、酸化亜鉛粉粒体と
ガラスからなる。
In FIG. 1, 1 is an electrically insulating and heat-resistant substrate, 2 and 4 are electrodes, and 3 is a varistor film, which is made of zinc oxide powder and glass.

また第2図は本発明による厚膜バリスタの電圧−電流特
性を示すものである。周知のようにバリスタの電圧一電
流特性は次の経験式であられされる。但し、I:電流、
α:非直線係数、■:電圧、C:定数。そして、電流し
を流したときの電圧を■。
Further, FIG. 2 shows the voltage-current characteristics of the thick film varistor according to the present invention. As is well known, the voltage-current characteristics of a varistor are expressed by the following empirical formula. However, I: current;
α: nonlinear coefficient, ■: voltage, C: constant. Then, the voltage when the current flows is ■.

とすれば、■。は電流しにおけるバリスタ電圧と定義さ
れる。本発明において使用した酸化亜鉛粉粒体は次のよ
うにして作つた。
If so, ■. is defined as the varistor voltage at the current. The zinc oxide powder used in the present invention was produced as follows.

すなわち、酸化亜鉛(ZnO)粉末を1000〜140
0℃の温度で空気雰囲気中において0.5〜5時間焼成
し、得られた焼結体を微粉砕することにより、平均粒径
4〜10pmのものと平均粒径2μm以下のものを得た
。本発明で用いられる結合剤としてのガラスフリットは
空気中で焼付けした場合、焼付温度で充分溶融し、酸化
亜鉛粉粒体を互いによく結合させ、同時に基板上または
電極上によく固着するものであればよい。
That is, zinc oxide (ZnO) powder is
By firing in an air atmosphere at a temperature of 0°C for 0.5 to 5 hours and finely pulverizing the obtained sintered body, one with an average particle size of 4 to 10 pm and one with an average particle size of 2 μm or less were obtained. . When the glass frit used as a binder used in the present invention is baked in air, it melts sufficiently at the baking temperature, binds the zinc oxide particles well to each other, and at the same time fixes well on the substrate or electrode. Bye.

この目的に対して好ましい性質を示すガラスフリットは
硼酸バリウム亜鉛ガラスである。とりわけ好ましい特性
を示すこのガラス組成は30〜45重量%の酸化硼素と
10〜4唾量%の酸化バリウムと15〜45重量%の酸
化亜鉛であつた。更に、この酸化硼素と酸化バリウムと
酸化亜鉛の混合物に対して、2〜15重量%の酸化ビス
マスまたは酸化コバルトのそれぞれを個々、もしくは両
方とも添加したものも好ましい特性を示した。そして、
ガラスフリットの作成は従来よく知られている方法によ
つた。すなわち、所定のガラス組成分を配合し、よく混
合したものを高温で溶融させた後、水中に入れて急冷し
、その後所要の粒径まで微粉砕することにより、平均粒
径4〜7μmのガラスフリットを得た。これらのガラス
フリットと酸化亜鉛粉粒体および増粘剤を含む溶剤から
バリスタペーストを作る。
A glass frit that exhibits favorable properties for this purpose is barium zinc borate glass. The glass composition exhibiting particularly favorable properties was 30-45% by weight boron oxide, 10-4% by weight barium oxide, and 15-45% by weight zinc oxide. Further, preferable properties were also shown when 2 to 15% by weight of bismuth oxide or cobalt oxide was added individually or both to the mixture of boron oxide, barium oxide, and zinc oxide. and,
The glass frit was prepared by a well-known method. That is, glass with an average particle size of 4 to 7 μm is produced by blending a predetermined glass composition, melting the well-mixed mixture at high temperature, quenching it in water, and then pulverizing it to the required particle size. Got frites. A barista paste is made from these glass frits, zinc oxide powder and a solvent containing a thickener.

その方法はこれらの組成物を配合し、3段ローラー,フ
ーバーマーラ等の混練機でよく混合して均一分散させ、
所定の粘度のものを得る。溶剤及び増粘剤はペーストを
作るために必要なものであり、焼付中に飛散するもので
あれは特にその種類に制限はないが、エチルセルローズ
をカルビトールアセテートに溶解したものを用いた。上
記のバリスタペーストの粘度は200〜2000ポイズ
である。本発明において用いた電極材料は、銀粉と酸化
ビスマスと増粘剤を含む銀ペーストである。
The method involves blending these compositions, mixing them well with a kneader such as a three-stage roller or Hubermala, and uniformly dispersing them.
Obtain one with a predetermined viscosity. The solvent and thickener are necessary for making the paste, and there are no particular restrictions on their type as long as they are scattered during baking, but a solution of ethyl cellulose in carbitol acetate was used. The viscosity of the above barista paste is 200 to 2000 poise. The electrode material used in the present invention is a silver paste containing silver powder, bismuth oxide, and a thickener.

尚、銀以外にも金,白金やパラジウムの粉末を含むペー
ストも電極に用いることができる。銀ペーストは平均粒
径0.1〜10μmの銀粉と酸化ビスマスと溶剤を含む
増粘剤からなり、これを混合して得ている。次に、厚膜
バリスタの製造方法を第1図を用いて述べる。
Note that in addition to silver, pastes containing powders of gold, platinum, and palladium can also be used for the electrodes. The silver paste consists of silver powder with an average particle size of 0.1 to 10 μm, bismuth oxide, and a thickener containing a solvent, and is obtained by mixing these together. Next, a method for manufacturing a thick film varistor will be described with reference to FIG.

まず、耐熱性がよく、電気絶縁性を有″する基板1、例
えばアルミナ,フォルステライト,結晶化ガラス等の表
面に銀ペーストを塗布し、乾燥後850〜950゜Cの
最高温度を有するトンネル炉の中て空気雰囲気中て焼付
けて銀電極2を作る。次に、この電極2の上にバリスタ
ペーストを塗布し乾燥後、同じ方法でバリスタ膜3を作
る。次に、同じ銀ペーストを用い、同じ方法によりバリ
スタ膜3の上に電極4を形成する。この電極4を焼付け
後、必要に応じてこれらの焼付温度より低い温度で被覆
できるオーバコートガラスまたは樹脂て保護して特性劣
化を防止する。以下、更に具体的な実施例をあげて発明
の内容を述べる。
First, a silver paste is applied to the surface of a substrate 1 having good heat resistance and electrical insulation properties, such as alumina, forsterite, crystallized glass, etc., and after drying, a tunnel furnace having a maximum temperature of 850 to 950°C is applied. A silver electrode 2 is made by baking in an air atmosphere.Next, varistor paste is applied on this electrode 2 and after drying, a varistor film 3 is made in the same way.Next, using the same silver paste, An electrode 4 is formed on the varistor film 3 by the same method. After baking this electrode 4, if necessary, it is protected with an overcoat glass or resin that can be coated at a temperature lower than the baking temperature to prevent characteristic deterioration. Hereinafter, the content of the invention will be described by giving more specific examples.

酸化亜鉛(ZnO)粉末を1350゜Cの温度て空気中
雰囲気の中で1時間加熱した。
Zinc oxide (ZnO) powder was heated at a temperature of 1350°C in an air atmosphere for 1 hour.

得られた焼結体をスタンプミルで粗粉砕して、続いてボ
ールミルで微粉砕して平均粒径4〜10μmの酸化亜鉛
粒体と平均粒径2μm以下の酸化亜鉛粉体を作つた。一
方、ガラスフリット組成として、酸化硼素(B2O3)
,酸化バリウム(BaO),酸化亜鉛(ZnO)をそれ
ぞれ35重量%、3鍾量%、35重量%とし、この混合
物に対して5重量%の酸化コバルト(CO2O3)及び
酸化ビスマス(Bl2O3)をそれぞれ添加した。
The obtained sintered body was coarsely pulverized with a stamp mill and then finely pulverized with a ball mill to produce zinc oxide particles with an average particle size of 4 to 10 μm and zinc oxide powder with an average particle size of 2 μm or less. On the other hand, as a glass frit composition, boron oxide (B2O3)
, barium oxide (BaO), and zinc oxide (ZnO) were set to 35% by weight, 3% by weight, and 35% by weight, respectively, and 5% by weight of cobalt oxide (CO2O3) and bismuth oxide (Bl2O3) were added to this mixture, respectively. Added.

これらの混合物を1250゜Cで溶融し、水中に投入急
冷して粗粉砕してから、ボールミルを用いて平均粒径4
〜7μmのガラスフリットを作つた。
These mixtures were melted at 1250°C, poured into water, rapidly cooled, coarsely ground, and then milled using a ball mill to reduce the average particle size to 4.
A glass frit of ~7 μm was made.

これらの酸化亜鉛粉粒体とガラスフリットを各種割合て
混合した固形分8鍾量部と増粘剤を含む溶剤2鍾量部を
加えてフーバマーラでよく混練してバリスタペーストと
した。増粘剤は15重量%のエチルセルローズと85重
量%のカルビトールアセテートよりなる。電極材料は銀
粉95対酸化ビスマス(Bi2O3)5の重量比の粉末
にカルビトールアセテートの溶剤中にエチルセルローズ
を溶解したものを加え作成した。
These zinc oxide powders and glass frit were mixed in various ratios, and 8 parts by weight of solid content and 2 parts by weight of a solvent containing a thickener were added and thoroughly kneaded with a Hubermara to obtain a barista paste. The thickener consists of 15% by weight ethyl cellulose and 85% by weight carbitol acetate. The electrode material was prepared by adding ethyl cellulose dissolved in a carbitol acetate solvent to a powder having a weight ratio of 95 silver powder to 5 bismuth oxide (Bi2O3).

そして、銀ペーストをまずアルミナ基板上にスクリーン
印刷法により塗布し、乾燥後、最高温度920′Cでl
紛間保持するトンネル炉中を通し、空気雰囲気中で焼付
けた。
Silver paste was first applied onto an alumina substrate by screen printing, and after drying, it was heated to a maximum temperature of 920'C.
The powder was passed through a tunnel furnace and baked in an air atmosphere.

次に、バリスタペーストを同じ方法で塗布し、焼付けた
。得られたバリスタ膜の厚さは40μmであつた。つづ
いて同じ銀ペーストを5Tf0fL平方の電極面積に塗
布し、同じ方法で焼成した。このようにして得られた厚
膜バリスタのバリス,8夕電圧■。
Next, the barista paste was applied in the same manner and baked. The thickness of the obtained varistor film was 40 μm. Subsequently, the same silver paste was applied to an electrode area of 5Tf0fL square and fired in the same manner. The varis of the thick film varistor obtained in this way, 8 voltage.

,耐パルス電圧値を下記の表に示す。バリスタ電圧■。
は電流10rT1Aにおける電圧■10.nAで表わし
た。また、耐パルス電圧は第3図に示す試験回路で測定
した。試験はまず直流電源から35μFのコンデンサに
充電した後、SWを試料(厚膜バリスタ)側に入れ、充
電電圧を試料に印加する。これを10回繰り返し、厚膜
バリスタのバリスタ電圧VlO.nAが初期値と比較し
て10%以上の変化をする直流電源電圧値をその時の耐
パルス電圧値とした。以上詳述した内容および表から明
らかなように、本発明による酸化亜鉛粉粒体組成て平均
粒径4〜10pmのものと平均粒径2μm以下のものを
混合することにより、耐パルス特性は大巾に向上するこ
とがわかつた。
, pulse voltage resistance values are shown in the table below. Varistor voltage■.
is the voltage at a current of 10rT1A.■10. Expressed in nA. Further, the withstand pulse voltage was measured using a test circuit shown in FIG. In the test, first, a 35 μF capacitor is charged from a DC power supply, then the SW is placed on the sample (thick film varistor) side, and a charging voltage is applied to the sample. This is repeated 10 times, and the varistor voltage VlO of the thick film varistor. The DC power supply voltage value at which nA changed by 10% or more compared to the initial value was defined as the pulse withstand voltage value at that time. As is clear from the details detailed above and the table, by mixing the zinc oxide powder composition of the present invention with an average particle size of 4 to 10 pm and an average particle size of 2 μm or less, the pulse resistance characteristics can be improved. I found it to be significantly improved.

尚、ガラスの量が酸化亜鉛粉粒体とガラスの総量に対し
て(至)重量%未満では耐パルス電圧値が40V以下と
低く、一方ガラスの量が5唾量%を超えた場合にはガラ
スが銀電極ににじみ出し、ハンダ付けができない等の問
題があつた。
Furthermore, if the amount of glass is less than (to)% by weight based on the total amount of zinc oxide powder and glass, the pulse withstand voltage value will be low at 40V or less, whereas if the amount of glass exceeds 5% by weight, There were problems such as the glass seeping into the silver electrode, making it impossible to solder.

尚、実施例において、酸化亜鉛粉粒体についてのみ述べ
たが、ガラスフリットと混合してバリスタ膜を形成する
もの、例えは酸化亜鉛粉末に酸化ビスマス,酸化コバル
ト,酸化マンガン等を加えたものでも同様の効果が得ら
れる。
In the examples, only zinc oxide powder was described, but it can also be mixed with glass frit to form a varistor film, for example, zinc oxide powder mixed with bismuth oxide, cobalt oxide, manganese oxide, etc. A similar effect can be obtained.

】図面の簡単な説明 第1図は本発明の一実施例を示す厚膜バリスタの断面図
、第2図は同バリスタの電圧一電流特性を示す図、第3
図はパルス特性の試験回路を示す回路図である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a thick film varistor showing an embodiment of the present invention, FIG. 2 is a diagram showing voltage-current characteristics of the same varistor, and FIG.
The figure is a circuit diagram showing a test circuit for pulse characteristics.

1・・・・・・電気絶縁性基板、2,4・・・・・・電
極、3・・・...バリスタ膜。
1... Electric insulating substrate, 2, 4... Electrode, 3... .. .. Ballista membrane.

Claims (1)

【特許請求の範囲】 1 酸化亜鉛粉粒体とこれを結合するガラスとからなる
厚膜バリスタにおいて、前記酸化亜鉛粉粒体が平均粒径
4〜10μmの酸化亜鉛粒体と平均粒径2μm以下の酸
化亜鉛粉体とからなり、かつガラスの量が酸化亜鉛粉粒
体とガラスの総量に対して30〜50重量%である固形
分に増粘剤を含む溶剤を加えたペーストを電気絶縁性基
板の上に直接あるいは電極を介して塗布し、バリスタ膜
を形成したことを特徴とする厚膜バリスタ。 2 平均粒径2μm以下の酸化亜鉛粉体の量が酸化亜鉛
粒体に対して、10〜65重量%である特許請求の範囲
第1項記載の厚膜バリスタ。
[Scope of Claims] 1. A thick film varistor comprising zinc oxide powder and glass bonding the same, wherein the zinc oxide powder has an average particle size of 4 to 10 μm and a mean particle size of 2 μm or less. Electrically insulating paste is made by adding a solvent containing a thickener to the solid content of zinc oxide powder and glass in an amount of 30 to 50% by weight based on the total amount of zinc oxide powder and glass. A thick film varistor characterized by forming a varistor film by coating directly or via an electrode on a substrate. 2. The thick film varistor according to claim 1, wherein the amount of zinc oxide powder having an average particle diameter of 2 μm or less is 10 to 65% by weight based on the zinc oxide particles.
JP55084282A 1980-06-20 1980-06-20 thick film varistor Expired JPS6050322B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55084282A JPS6050322B2 (en) 1980-06-20 1980-06-20 thick film varistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55084282A JPS6050322B2 (en) 1980-06-20 1980-06-20 thick film varistor

Publications (2)

Publication Number Publication Date
JPS5710204A JPS5710204A (en) 1982-01-19
JPS6050322B2 true JPS6050322B2 (en) 1985-11-08

Family

ID=13826097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55084282A Expired JPS6050322B2 (en) 1980-06-20 1980-06-20 thick film varistor

Country Status (1)

Country Link
JP (1) JPS6050322B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442803A (en) * 1987-08-11 1989-02-15 Ngk Insulators Ltd Voltage-dependent nonlinear resistor

Also Published As

Publication number Publication date
JPS5710204A (en) 1982-01-19

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