JPS6045024A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS6045024A JPS6045024A JP15377283A JP15377283A JPS6045024A JP S6045024 A JPS6045024 A JP S6045024A JP 15377283 A JP15377283 A JP 15377283A JP 15377283 A JP15377283 A JP 15377283A JP S6045024 A JPS6045024 A JP S6045024A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- dry etching
- electrodes
- electric field
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims description 24
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15377283A JPS6045024A (ja) | 1983-08-23 | 1983-08-23 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15377283A JPS6045024A (ja) | 1983-08-23 | 1983-08-23 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6045024A true JPS6045024A (ja) | 1985-03-11 |
| JPH0566724B2 JPH0566724B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-22 |
Family
ID=15569796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15377283A Granted JPS6045024A (ja) | 1983-08-23 | 1983-08-23 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6045024A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164219U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1986-11-19 | 1988-10-26 | ||
| US5099790A (en) * | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| US5695597A (en) * | 1992-11-11 | 1997-12-09 | Mitsubishi Denki Kabushiki Kaisha | Plasma reaction apparatus |
-
1983
- 1983-08-23 JP JP15377283A patent/JPS6045024A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164219U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1986-11-19 | 1988-10-26 | ||
| US5099790A (en) * | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| US5695597A (en) * | 1992-11-11 | 1997-12-09 | Mitsubishi Denki Kabushiki Kaisha | Plasma reaction apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566724B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-22 |
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