JPS6045024A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS6045024A
JPS6045024A JP15377283A JP15377283A JPS6045024A JP S6045024 A JPS6045024 A JP S6045024A JP 15377283 A JP15377283 A JP 15377283A JP 15377283 A JP15377283 A JP 15377283A JP S6045024 A JPS6045024 A JP S6045024A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gas
electric field
dry etching
generated
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15377283A
Other versions
JPH0566724B2 (en )
Inventor
Haruo Okano
Takashi Yamazaki
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means

Abstract

PURPOSE:To enable to etch in a high speed the various kinds of semiconductor manufacturing materials, and moreover, to enable to check previously generation of ion damage at a dry etching device by a method wherein a magnetic field generated according to magnets is applied to the direction to meet at right angles with an electric field at usually reactive ion etching. CONSTITUTION:Gutter type electrodes 4a, 4b are arranged oppositely along the outer peripheral surface of a bell jar 1 on the outside of the bell jar 1. A permanent magnet 7a is arranged over a sample desk 2, and a permanent magnet 7b is fitted to the under surface of the sample desk 2. Reactive gas is introduced from a gas introducing port into the vacuum vessel 1, and gas in the vacuum vessel 1 is exhausted from a gas exhaust port. When a dry etching device is formed in such a construction, electrons (e) perform drift motion in space on a sample 3 according to actions of an electric field E generated by the electrodes 4a, 4b and a magnetic field B generated by the magnets 7a, 7b and to meet at right angles with the electric field, and motion length thereof is elongated substantially. Accordingly, frequency of collisions of electrons and reactive gas is increased sharply, and as a result, efficiency of ionization is enhanced sharply.
JP15377283A 1983-08-23 1983-08-23 Expired - Lifetime JPH0566724B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15377283A JPH0566724B2 (en) 1983-08-23 1983-08-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15377283A JPH0566724B2 (en) 1983-08-23 1983-08-23

Publications (2)

Publication Number Publication Date
JPS6045024A true true JPS6045024A (en) 1985-03-11
JPH0566724B2 JPH0566724B2 (en) 1993-09-22

Family

ID=15569796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15377283A Expired - Lifetime JPH0566724B2 (en) 1983-08-23 1983-08-23

Country Status (1)

Country Link
JP (1) JPH0566724B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164219U (en) * 1986-11-19 1988-10-26
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus
US5695597A (en) * 1992-11-11 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Plasma reaction apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164219U (en) * 1986-11-19 1988-10-26
JPH0513006Y2 (en) * 1986-11-19 1993-04-06
US5099790A (en) * 1988-07-01 1992-03-31 Canon Kabushiki Kaisha Microwave plasma chemical vapor deposition apparatus
US5695597A (en) * 1992-11-11 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Plasma reaction apparatus

Also Published As

Publication number Publication date Type
JPH0566724B2 (en) 1993-09-22 grant

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