JPS6043868A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6043868A JPS6043868A JP58151195A JP15119583A JPS6043868A JP S6043868 A JPS6043868 A JP S6043868A JP 58151195 A JP58151195 A JP 58151195A JP 15119583 A JP15119583 A JP 15119583A JP S6043868 A JPS6043868 A JP S6043868A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- beams
- incident
- glass plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 16
- 239000002344 surface layer Substances 0.000 claims abstract description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 3
- 239000011734 sodium Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000005357 flat glass Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はガラス基板上に一方の電極を成す透明導電層を
介して光電素子が固定され、基板を通じて入射する光に
より起電力を発生する光起電力装置に関する。[Detailed Description of the Invention] [Technical Field to which the Invention Pertains] The present invention relates to a light emitting device in which a photoelectric element is fixed on a glass substrate via a transparent conductive layer forming one electrode, and an electromotive force is generated by light incident through the substrate. It relates to an electromotive force device.
上述のような光起電力装置においてはできるだけ多くの
光量を光電素子に到達させるこ吉が望ましい。そのため
にガラス基板表面の反射を少なくする目的でガラス基板
の表面にガラスの屈折率１．５より小さい１，４の屈折
率を有する二酸化珪素ＳｉＯ□の膜を形成することが行
われる。この５ｉ０２膜の形成は通常ガラス板をアルコ
ール液中にＶ漬したのち焼成することによって行われる
。従ってＳ ｉ０２膜はガラス板の両面に形成される。In the photovoltaic device as described above, it is desirable to allow as much light as possible to reach the photoelectric element. For this purpose, a film of silicon dioxide SiO□ having a refractive index of 1.4, which is smaller than the refractive index of glass, 1.5, is formed on the surface of the glass substrate in order to reduce reflection on the surface of the glass substrate. The formation of this 5i02 film is usually performed by immersing a glass plate in an alcohol solution and then firing it. Therefore, the Si02 film is formed on both sides of the glass plate.
たとえアルコール液を片面だけに塗っても焼成中にアル
コール蒸気が生じてやはり両面に形成される。このよう
に両面にＳｉＯ□膜を備えたガラス板を基板とし、その
上にＩＴＯあるいはＳｎＯ，などの酸化物半冴体からな
る透明導電膜を一方の電極とするアモルファスシリコン
太陽電池などの光′亀素子を固定すると、ガラス板の光
入射面における反射は減少するものの、素子側では屈折
率の小さいＳｉＯ□膜と屈折率２．０の透明導電膜と接
することになってその界面ではノコラス板が直接透明導
電膜と接する場合に比して反射が多くなってしまう。Even if the alcohol solution is applied to only one side, alcohol vapor will still form on both sides during firing. In this way, amorphous silicon solar cells, etc., have a glass plate with SiO□ films on both sides as a substrate, and a transparent conductive film made of an oxide semiconductor such as ITO or SnO as one electrode on the glass plate. When the Kame element is fixed, the reflection on the light incident surface of the glass plate is reduced, but on the element side it comes into contact with the SiO□ film with a small refractive index and the transparent conductive film with a refractive index of 2.0, and at the interface there is a Nocolas plate. The amount of reflection increases compared to when the transparent conductive film is in direct contact with the transparent conductive film.
本発明はこの欠点を解消してガラス板側からの入射光の
光電素子への到達率がより高い光起電力装置を提供する
ことを目的とする。An object of the present invention is to eliminate this drawback and provide a photovoltaic device in which the incidence of incident light from the glass plate side reaches a photoelectric element is higher.
本発明は透明絶縁基板として光の入射面のみを弗化水素
に接触せしめて表面層のナトリウムを除去したソーダガ
ラス板を用いることにより上記の目的を達成する。The present invention achieves the above object by using, as a transparent insulating substrate, a soda glass plate in which only the light incident surface is brought into contact with hydrogen fluoride to remove sodium from the surface layer.
第１図は本発明の一実施例を示し、ガラス基板゛１の上
に透明導電膜２、ＰＮ接合を有するアモルファスシリコ
ン層３、金属電極４が順次積層された通常の太陽電池の
構造であるが、ガラス基板１は通常の板ガラスの一方の
面のみをＨＦふん囲気に接触せしめて、表面に約２０Ｏ
Ａの厚さでソーダガラス甲のＮａを除去した多孔質の層
１１を形成したものである。この処理は常温で行われる
ので他方の面をマスクすることは容易にできる。表面層
１１はＮａが除去されているためほとんどＳｉＯ□のみ
からなり、従ってその屈折率は１，４である。このよう
な表面層１１が基板１への光５の入射側にのみ存在し、
透明電極２の側には存在しないので、各層の屈折率は表
面層１１の１．４、ガラス板１の１．５、透明導電膜２
の２．０、シリコン層３の３．９と順次高くなっており
、途中での屈折率の逆転がないので反射は華低限に抑制
され、シリコン層３への入射量が増大するため、この光
起電力装置の発生電流値が５〜１０％向上する。FIG. 1 shows an embodiment of the present invention, which is a typical solar cell structure in which a transparent conductive film 2, an amorphous silicon layer 3 having a PN junction, and a metal electrode 4 are sequentially laminated on a glass substrate 1. However, the glass substrate 1 is made by contacting only one side of an ordinary plate glass with an HF atmosphere, and applying a temperature of about 20O to the surface.
A porous layer 11 with a thickness of A is formed by removing Na from the soda glass shell. Since this process is performed at room temperature, it is easy to mask the other side. The surface layer 11 consists almost only of SiO□ since Na has been removed, and therefore has a refractive index of 1.4. Such a surface layer 11 exists only on the incident side of the light 5 to the substrate 1,
Since it does not exist on the transparent electrode 2 side, the refractive index of each layer is 1.4 for the surface layer 11, 1.5 for the glass plate 1, and 1.5 for the transparent conductive film 2.
2.0 for silicon layer 3, and 3.9 for silicon layer 3. Since there is no inversion of the refractive index on the way, reflection is suppressed to the low limit, and the amount of light incident on silicon layer 3 increases. The generated current value of this photovoltaic device is improved by 5 to 10%.
本発明は光起電力装置のガラス基板として光入射側にＨ
Ｆ処理によりＮａを除去した表面層を有するソーダガラ
ス板を用いるもので、ＨＦ処理は常温でできるため容易
に均一な低屈折率の表面５ｉｎ２層を得ることができ、
表面における光の反射が低減されてより効率の高い先程
電力装置を得ることができる。The present invention provides H as a glass substrate of a photovoltaic device on the light incident side.
It uses a soda glass plate with a surface layer from which Na has been removed by F treatment, and since HF treatment can be performed at room temperature, it is possible to easily obtain a 5-inch 2-layer surface with a uniform low refractive index.
Reflection of light at the surface is reduced, resulting in a more efficient power device.
第１図は本発明の一実施例の断面図である。 FIG. 1 is a sectional view of an embodiment of the present invention.
Claims (1)
して光電素子が固定され、基板を通じて入射する光によ
り起電力を発生するものにおいて、基板として光の入射
面のみを弗化水素に接触せしめて表面層のすｌ−ＩＪウ
ムを除去したソーダガラス板が用いられたことを特徴と
する光起電力装置。1) In a device in which a photoelectric element is fixed on a transparent insulating substrate via a transparent conductive layer forming one electrode, and an electromotive force is generated by light incident through the substrate, only the light incident surface is made of hydrogen fluoride as the substrate. A photovoltaic device characterized in that a soda glass plate is used in which the surface layer of the sl-IJium is removed by contacting the plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151195A JPS6043868A (en) | 1983-08-19 | 1983-08-19 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151195A JPS6043868A (en) | 1983-08-19 | 1983-08-19 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6043868A true JPS6043868A (en) | 1985-03-08 |
Family
ID=15513334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151195A Pending JPS6043868A (en) | 1983-08-19 | 1983-08-19 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043868A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010114314A3 (en) * | 2009-03-31 | 2011-03-31 | 엘지이노텍주식회사 | Solar photovoltaic power generation apparatus and manufacturing method thereof |
-
1983
- 1983-08-19 JP JP58151195A patent/JPS6043868A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010114314A3 (en) * | 2009-03-31 | 2011-03-31 | 엘지이노텍주식회사 | Solar photovoltaic power generation apparatus and manufacturing method thereof |
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