JPS603999U - LSI with built-in memory - Google Patents

LSI with built-in memory

Info

Publication number
JPS603999U
JPS603999U JP9735983U JP9735983U JPS603999U JP S603999 U JPS603999 U JP S603999U JP 9735983 U JP9735983 U JP 9735983U JP 9735983 U JP9735983 U JP 9735983U JP S603999 U JPS603999 U JP S603999U
Authority
JP
Japan
Prior art keywords
memory
latch
built
lsi
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9735983U
Other languages
Japanese (ja)
Inventor
吉森 崇
祥平 鈴木
Original Assignee
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社東芝 filed Critical 株式会社東芝
Priority to JP9735983U priority Critical patent/JPS603999U/en
Publication of JPS603999U publication Critical patent/JPS603999U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はゲートアレイにおけるメモリ周辺の回路構成を
示す図、第2図は本考案の実施例を示すブ冶ツク図であ
り、ゲートアレイ内部のメモリ周辺の構成のみを抽出し
て示す図、第3図は本考案実施例の動作を示すタイミン
グチャートである。 21・・・メモリ本体、22・・・書込みデータラッチ
、23・・・書込みアドレスラッチ、24・・・書込み
イネーブルラッチ。
FIG. 1 is a diagram showing the circuit configuration around the memory in the gate array, FIG. 2 is a block diagram showing an embodiment of the present invention, and is a diagram showing only the configuration around the memory inside the gate array, FIG. 3 is a timing chart showing the operation of the embodiment of the present invention. 21...Memory body, 22...Write data latch, 23...Write address latch, 24...Write enable latch.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] メモリと組合せ回路を含むLSIであって、上記メモリ
はメモリ本体と、このメモリ本体に対し供給される書込
みデータを保持する第1のラッチと、上記メモリ本体に
対し供給される書込みアドレスを保持する第2のラッチ
と、上記メモリ本体に対し供給される書込みイネーブル
信号をラッチする第3のラッチで構成され、上記第1〜
第3のラッチに保持された出力を使用してデータ書込み
を行なうことを特徴とするメモリ内蔵LSI0
The LSI includes a memory and a combinational circuit, and the memory includes a memory body, a first latch that holds write data supplied to the memory body, and a write address supplied to the memory body. It is composed of a second latch and a third latch that latches a write enable signal supplied to the memory main body, and
Memory built-in LSI0 characterized by writing data using the output held in the third latch
JP9735983U 1983-06-23 1983-06-23 LSI with built-in memory Pending JPS603999U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9735983U JPS603999U (en) 1983-06-23 1983-06-23 LSI with built-in memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9735983U JPS603999U (en) 1983-06-23 1983-06-23 LSI with built-in memory

Publications (1)

Publication Number Publication Date
JPS603999U true JPS603999U (en) 1985-01-12

Family

ID=30231620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9735983U Pending JPS603999U (en) 1983-06-23 1983-06-23 LSI with built-in memory

Country Status (1)

Country Link
JP (1) JPS603999U (en)

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