JPS6038849A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6038849A
JPS6038849A JP58146322A JP14632283A JPS6038849A JP S6038849 A JPS6038849 A JP S6038849A JP 58146322 A JP58146322 A JP 58146322A JP 14632283 A JP14632283 A JP 14632283A JP S6038849 A JPS6038849 A JP S6038849A
Authority
JP
Japan
Prior art keywords
semiconductor device
aluminum
wiring
electrode
sulfate ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58146322A
Other languages
Japanese (ja)
Inventor
Toru Kawanobe
川野辺　徹
Kenichi Otsuka
大塚　憲一
Naoyuki Nagashima
直之 長嶋
Senji Shoji
庄司　仙治
Akiro Hoshi
星　彰郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58146322A priority Critical patent/JPS6038849A/en
Publication of JPS6038849A publication Critical patent/JPS6038849A/en
Pending legal-status Critical Current

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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the corrosion of an electrode or a wiring, at least one side thereof consists of aluminum or an alloy mainly comprising aluminum, by forming a thin-film composed of sulfuric acid ions on the surface of a bonding pad. CONSTITUTION:A semiconductor device 1 is formed by molding a pellet 3 fitted on a tab 2 mounted at the central section of the device 1 and wires 6 bonding and electrically connecting a bonding pad 4 as an electrode consisting of aluminum or an alloy mainly comprising aluminum for the pellet 3 and leads 5 with a resin 7. When a thin-film 9 composed of sulfuric acid ions is formed to a section, in which aluminum, etc. are exposed, of the bonding pad 4 at that time, the bonding pad 4 is protected effectively from corrosion. When aluminum is used as a material for the wire 6, a thin-film consisting of sulfuric acid ions is shaped on the surface of the wire 6, thus also effectively preventing the wire 6 effectively.

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、半導体装置の耐湿性向」二、ｑ￥に４ｆｉｌ
　Ｊｌｔｉ封止型半導体装置の電極または配線の腐食防
止に通用して有効な技術に関するものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to the moisture resistance of a semiconductor device.
The present invention relates to a technique that is generally effective for preventing corrosion of electrodes or wiring of Jlti-sealed semiconductor devices.

［背景技術］ 半導体装置の電極等の材料として用いられる。アルミニ
ウムまたはアルミニウムを主成分とする合金（以下アル
ミニウム等ということがある。）は非常に腐食し易いと
いう性質を有している。[Background Art] Used as a material for electrodes, etc. of semiconductor devices. Aluminum or an alloy containing aluminum as a main component (hereinafter sometimes referred to as aluminum etc.) has the property of being extremely susceptible to corrosion.

この性質は水分さらにはその水分に熔解する微量の塩素
イオン（ＣＩ−）等の存在により一段と顕著になり、そ
の結果、アルミニウム等の腐食は極端に加速されること
になる。This property becomes even more remarkable due to the presence of water and trace amounts of chlorine ions (CI-) dissolved in the water, and as a result, corrosion of aluminum, etc. is extremely accelerated.

また、樹脂封止型半導体装置はその材料であるモールド
用樹脂およびリードフレーム材料である４２−アロイ等
の金属の両者の性質の違いから樹脂と外部リードとの接
触界面に剥離現象が生じ易い。さらに、上記の半導体装
置はその製造工程、なかでも外部リードの折り曲げ成形
工程においてその折り曲げによるストレスが外部リード
の接触部の樹脂に加わるために、該接触界面における剥
離、または該接触部近傍にクランクが発生し易いことが
考えられる。Further, in a resin-sealed semiconductor device, a peeling phenomenon tends to occur at the contact interface between the resin and the external lead due to the difference in properties between the molding resin that is the material of the device and the metal such as 42-alloy that is the lead frame material. Furthermore, in the manufacturing process of the above semiconductor device, in particular, stress due to bending is applied to the resin at the contact area of the external lead during the process of bending and forming the external lead, resulting in peeling at the contact interface or cracking in the vicinity of the contact area. It is thought that this is likely to occur.

アルミニウム等を電極等の材料に用いている樹脂封止型
半導体装置にあっては、薄型パッケージであれば、水分
が樹脂を直接通り抜けて入り込み電極等の腐食を助長す
ることもある。しかし、前記のように半導体装置の製造
工程において発生ずる水分の侵入経路を通しても水分等
が入り込み、この水分等がワイヤを介してペレットの電
極部等に到達し、アルミニウム等からなる該電極部等を
腐食するに至らしめ、その腐食が原因で電気的導通不良
等の問題が発生ずる（たとえば、特願昭５６−１１５０
８１号など）。In a resin-sealed semiconductor device that uses aluminum or the like as a material for electrodes, etc., if the package is thin, moisture may penetrate directly through the resin and promote corrosion of the electrodes. However, as mentioned above, moisture etc. also enter through the moisture intrusion route generated in the manufacturing process of semiconductor devices, and this moisture etc. reaches the electrode part of the pellet etc. through the wire, and the electrode part made of aluminum etc. This leads to corrosion, and this corrosion causes problems such as poor electrical continuity (for example, patent application No. 1150/1986)
81 etc.).

［発明の目的コ 本発明の目的は、電極または配線の少なくとも一方がア
ルミニウムまたはアルミニウムを主成分とする合金であ
る樹脂封止型半導体装置において、該電極または配線の
腐食を有効に防止した半導体装置に関する技術を提供す
ることにある。[Objective of the Invention] The object of the present invention is to provide a semiconductor device in which corrosion of the electrode or wiring is effectively prevented in a resin-encapsulated semiconductor device in which at least one of the electrode or the wiring is made of aluminum or an alloy mainly composed of aluminum. The goal is to provide technology related to

本発明の他の目的は、電極または配線の表面に腐食防止
を施した」二記半導体装置を製造する技術を提供するこ
とにある。Another object of the present invention is to provide a technique for manufacturing a semiconductor device in which corrosion prevention is applied to the surface of an electrode or wiring.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、電極または配線の少なくとも一方がアルミニ
ウム等の材質である樹脂封止型半導体装置において、ポ
ンディングパッドの表面に硫酸イオン（ＳＯ４−）から
なる薄膜を形成することにより、該電極または配線の腐
食を有効に防止するものである。That is, in a resin-sealed semiconductor device in which at least one of the electrodes or wiring is made of a material such as aluminum, corrosion of the electrode or wiring is prevented by forming a thin film of sulfate ions (SO4-) on the surface of the bonding pad. This effectively prevents

また、電極または配線の少なくとも一方がアルミニウム
等の材質である樹脂封止型半導体装置において、その樹
脂封止前に電極または配線の表面を硫酸イオン含有溶液
で処理し、該電極または配線の表面に硫酸イオンからな
る薄膜を形成せしめることにより、該電極または配線の
腐食を防止するものである。Furthermore, in a resin-sealed semiconductor device in which at least one of the electrodes or wiring is made of a material such as aluminum, the surface of the electrode or wiring is treated with a solution containing sulfate ions before being sealed with resin, and the surface of the electrode or wiring is treated with a solution containing sulfate ions. By forming a thin film made of sulfate ions, corrosion of the electrode or wiring is prevented.

さらに、上記半導体装置において、その樹脂封止の後に
、半導体装置を硫酸イオン合有溶液で処理し、」二記の
電極または配線の表面に硫酸イオンからなる薄膜を形成
せしめることにより、バ・７ケージにクランク等が発生
した半導体装置でも該電極または配線の腐食を防止する
ものである。Furthermore, in the above semiconductor device, after the resin sealing, the semiconductor device is treated with a sulfate ion-containing solution to form a thin film made of sulfate ions on the surface of the electrode or wiring described in ``2''. Even in semiconductor devices where a crank or the like has occurred in the cage, corrosion of the electrodes or wiring can be prevented.

［実施例１ｊ 第１図は、本発明の一実施例である半導体装置の概略断
面図である。[Example 1j FIG. 1 is a schematic cross-sectional view of a semiconductor device that is an example of the present invention.

本実施例１における半導体装置１は樹脂封止型パンケー
ジからなるものであって、その中央部に設けられたタブ
２の上に取り付＆、Ｊられたペレット３と、そのペレッ
トのアルミニウムまたはアルミニウムを主成分とする合
金からなる電極であるポンディングパッド４とリード５
をボンディングして電気的に接続するフィー１ツ６とを
樹脂７でモールドすることにより形成されるものである
。そして、本発明の特徴は、絶縁膜で覆われた上記ペレ
ットの表面の所定の位置に該ペレットと電気的に接続し
て設けられているアルミニウム等からなるボンディング
パッド４表面において、ボンディングした後になおアル
ミニウム等が露出している表面に硫酸イオンからなる薄
膜９を形成したことにある。The semiconductor device 1 in this embodiment 1 consists of a resin-sealed pancage, and includes a pellet 3 attached to a tab 2 provided in the center thereof, and aluminum or aluminum of the pellet. A bonding pad 4 and a lead 5, which are electrodes made of an alloy whose main component is
It is formed by molding with resin 7 a foot 6 which is electrically connected by bonding. A feature of the present invention is that after bonding, the surface of the bonding pad 4 made of aluminum or the like is provided at a predetermined position on the surface of the pellet covered with an insulating film and electrically connected to the pellet. The reason is that a thin film 9 made of sulfate ions is formed on the exposed surface of aluminum or the like.

本実施例１の半導体装置は、ボンディング後のボンディ
ングバンド４のアルミニウム等が露出している部分に硫
酸イオンからなる薄膜９を形成することにより、極めて
腐食され易い性質のアルミニウム等からなるポンディン
グパッドを腐食から有効に保護するものである。また、
配線であるボンディング川のワイヤ６の材料としては金
があるが、それ以外にアルミニウム等のワイヤも考えら
れる。この場合、アルミニウム等のワイヤの表面にｒ＆
酸イオンからなる薄膜を形成することにより、ワイヤの
腐食をも有効に防止できる。In the semiconductor device of Example 1, by forming a thin film 9 made of sulfate ions on the exposed portion of the bonding band 4 such as aluminum after bonding, a bonding pad made of aluminum etc., which is extremely susceptible to corrosion, is formed. It provides effective protection against corrosion. Also,
The bonding wire 6, which is the wiring, may be made of gold, but other wires such as aluminum may also be used. In this case, r&
By forming a thin film made of acid ions, corrosion of the wire can also be effectively prevented.

なお、本発明にかかるアルミニウム等の電極表面に形成
された硫酸イオンからなる薄膜の腐食防止効果は次表に
示す強制腐食試験の結果より明らかである。The corrosion-preventing effect of the thin film of sulfate ions formed on the surface of the electrode made of aluminum or the like according to the present invention is clear from the results of the forced corrosion test shown in the table below.

この強制試験は、樹脂モールド前であって、ワイヤ６で
ボンディングバンド４とリード５をボンディングした後
の状態のものを試料として用いて行ったものである。な
お、ここで用いたポンディングパッドはアルミニウムを
主成分とする合金からなり、他の成分としては、たとえ
ば数％のシリコンを含むものである。This forced test was conducted using a sample before resin molding and after bonding the bonding band 4 and lead 5 with the wire 6. Note that the bonding pad used here is made of an alloy whose main component is aluminum, and contains, for example, several percent of silicon as other components.

この表に示す結果は、塩素イオンを含有する水溶液の所
定量をボンディングバンド表面に直接被着させた後に、
常温でほぼ１００％近い湿度の下に２４０時間放置する
強制腐食試験によるもので、硫酸イオンの存在が塩素イ
オンによるアルミニウム等の腐食を防止する有効性を、
試料１６０点中の腐食不良の発生数で示したものである
。The results shown in this table show that after applying a predetermined amount of an aqueous solution containing chloride ions directly to the surface of the bonding band,
This is a forced corrosion test in which the material is left at room temperature and under almost 100% humidity for 240 hours, and the effectiveness of the presence of sulfate ions in preventing corrosion of aluminum and other materials caused by chlorine ions has been confirmed.
This is expressed as the number of corrosion defects among 160 samples.

すなわち、塩素イオンが６Ｘ１０’％の溶液では、硫酸
イオンを含まないものと２％含有するものについて、塩
素イオンが６Ｘ１０−２％溶液では、硫酸イオンを含ま
ないものと２Ｘ１０−１％含有するものについて、試験
を行った結果である。上記の表より明らかなように、塩
素イオンが６Ｘ１０−２％の溶液による腐食試験につい
ていえば、硫酸イオンが存在しない場合は、１６０点中
９ｓ点の腐食不良が発生したものが、２ＸｌＯ−１％の
硫酸イオンを存在させることにより腐食不良の発生が完
全に防止される、という極めて顕著な効果が認められた
。That is, in a solution containing 6 x 10'% chloride ions, one containing no sulfate ions and one containing 2%, and a solution containing 6 x 10-2% chlorine ions, one containing no sulfate ions and one containing 2 x 10-1%. This is the result of testing. As is clear from the table above, regarding the corrosion test using a solution containing 6X10-2% chlorine ions, in the absence of sulfate ions, the corrosion failure at 9s out of 160 points was 2XlO-1. % of sulfate ions was found to have the extremely remarkable effect of completely preventing the occurrence of corrosion defects.

［実施例２コ 本実施例２は、本発明の一実施例である上記の実施例１
に示す半導体装置の製造方法に関するものである。[Example 2] This example 2 is an example of the above-mentioned example 1, which is an example of the present invention.
The present invention relates to a method for manufacturing a semiconductor device shown in FIG.

本実施例２に示す半導体装置の製造方法は、ペレットお
よびワイヤを樹脂封止する前に、ワイヤをボンディング
した後のアルミ等からなるボンディングバンドの表面が
露出した部分を、所定濃度の希硫酸で所定時間処理した
後、水洗し乾燥する。In the method for manufacturing a semiconductor device shown in Example 2, before the pellet and wire are sealed with resin, the exposed surface of the bonding band made of aluminum or the like after bonding the wire is treated with dilute sulfuric acid at a predetermined concentration. After processing for a predetermined period of time, it is washed with water and dried.

処理条件の一例を示せば、２％希硫酸中に３０秒間浸漬
した後、水洗、乾燥を行うものである。An example of treatment conditions is immersion in 2% dilute sulfuric acid for 30 seconds, followed by washing with water and drying.

このようにボンディングバンドの露出面に硫酸イオンか
らなる薄膜を形成した後、所定の方法にて樹脂封止を行
い、さらに所定の工程を経て腐食防止能を備えた完成さ
れた半導体装置を得るものである。After forming a thin film made of sulfate ions on the exposed surface of the bonding band in this way, resin sealing is performed using a predetermined method, and further predetermined steps are performed to obtain a completed semiconductor device with corrosion prevention ability. It is.

［実施例３］ 本実施例３は、本発明の一実施例である前記実施例１に
示す半導体装置の他の製造方法に関するものである。[Embodiment 3] Embodiment 3 relates to another method for manufacturing the semiconductor device shown in Embodiment 1, which is an embodiment of the present invention.

本実施例３に示す半導体装置の製造方法は、ペレットお
よびワイヤ等を樹脂封止した後に、該装置を所定の硫酸
イオン濃度の水溶液に所定時間浸漬する等の処理をする
ことによって行うものである。すなわち、樹脂封止型半
導体装置では、リードフレームとその接触部における樹
脂の界面で剥離現象を起こし易く、第２図に示す間隙１
０が外部リードの折り曲げ工程等で生じ易いという性質
がある。その間隙１０ば水分等の腐食原因物質の侵入を
許し、侵入した水分等はワイ４・６を伝わりボンディン
グバンド４に到達する。The method for manufacturing a semiconductor device shown in Example 3 is carried out by sealing pellets, wires, etc. with resin, and then subjecting the device to a treatment such as immersing the device in an aqueous solution with a predetermined sulfate ion concentration for a predetermined time. . In other words, in a resin-sealed semiconductor device, peeling easily occurs at the interface between the lead frame and the resin at the contact area, and the gap 1 shown in FIG.
There is a property that 0 is likely to occur during the bending process of the external lead. The gap 10 allows corrosion-causing substances such as moisture to enter, and the intruded moisture passes through the wires 4 and 6 and reaches the bonding band 4.

その結果、アルミニウム等からなる該ポンディングパッ
ドは腐食することになる。このように間隙１０はポンデ
ィングパッドの腐食原因のうちもっとも大きなものであ
るが、この間隙ｌＯの発生を完全に防止することは極め
て困難である。As a result, the bonding pad made of aluminum or the like will corrode. As described above, the gap 10 is the largest cause of corrosion of the bonding pad, but it is extremely difficult to completely prevent the occurrence of this gap 10.

その発生率は僅少ではあるが、上記間隙１０の発生は避
けがた（、そのまま放置すればアルミニウム等からなる
ポンディングパッドの腐食につながる。しかし、予め硫
酸イオン含有溶液に半導体装置を浸漬する等の処理を施
すことにより、間隙１０から硫酸イオン含有溶液を浸透
させ、ワイヤ６を伝わってポンディングパッド４に到ら
しめ、第２図に示すように硫酸イオンからなる薄膜９を
前もって形成することにより、その後に間隙１０を通し
て水分、塩素イオン等が侵入したとしても、該ポンディ
ングパッドの腐食を有効に防止できる半導体装置を提供
することができる。Although the occurrence rate is small, the occurrence of the above-mentioned gap 10 is unavoidable (if left as it is, it will lead to corrosion of the bonding pad made of aluminum, etc.). By performing the treatment described above, a solution containing sulfate ions is allowed to permeate through the gap 10 and reach the bonding pad 4 through the wire 6, thereby forming a thin film 9 made of sulfate ions in advance as shown in FIG. Therefore, even if moisture, chlorine ions, etc. enter through the gap 10 afterwards, it is possible to provide a semiconductor device that can effectively prevent corrosion of the bonding pad.

具体的な一例を示せば、間隙が生じている半導体装置を
２％の希硫酸中に１０分間浸漬した後、水洗し、乾燥す
る。To give a specific example, a semiconductor device with gaps is immersed in 2% dilute sulfuric acid for 10 minutes, then washed with water and dried.

このような処理方法で得られた半導体装置を、温度６５
℃、湿度６５％の雰囲気中に１０００時間放置する強制
腐食試験を行ったところ、希硫酸水溶液中に浸漬処理し
ないものに比べ、処理した方の不良発生率を１１５以下
に減少させることができ、その効果が明らかであること
が証明された。A semiconductor device obtained by such a processing method is heated to a temperature of 65%.
When we conducted a forced corrosion test in which the specimens were left in an atmosphere at 65% humidity for 1000 hours, the defect rate of the treated specimens was reduced to 115 or less compared to the specimens that were not immersed in a dilute sulfuric acid aqueous solution. It has been proven that the effect is clear.

［実施例４］ 本実施例４は、上記実施例３における硫酸イオンを含有
する水溶液として半田フラックス液を用いることにより
、上記実施例３と同一の目的を達成する半導体装置の製
造方法に関するものである。[Example 4] This example 4 relates to a method for manufacturing a semiconductor device that achieves the same objective as the above example 3 by using a solder flux liquid as the aqueous solution containing sulfate ions in the above example 3. be.

本実施例４は、半導体装置の外部リードにプリント基板
実装用の半田コートを行う前に、所定の濃度の硫酸イオ
ンを含有するフラックス液に半導体装置を浸漬する等の
処理を施すことにより、前記実施例３に示したと同様に
、第２図における間隙１０から硫酸イオンを含むフラッ
クス液を浸透させることによりワイヤ６を伝ってポンデ
ィングパッド４の表面に到達したフラックス液が硫酸イ
オンからなる薄膜９を形成し、その後の水分、塩素イオ
ン等による腐食作用から有効に保護された半導体装置を
提供するものである。In this fourth embodiment, before coating the external leads of the semiconductor device with solder for mounting on a printed circuit board, the semiconductor device is subjected to a process such as immersing it in a flux solution containing sulfate ions at a predetermined concentration. In the same manner as shown in Example 3, the flux liquid containing sulfate ions is infiltrated through the gap 10 in FIG. The present invention provides a semiconductor device which is effectively protected from subsequent corrosion by moisture, chlorine ions, etc.

具体的には、所定濃度、たとえば１％または２％の濃度
になるように硫酸を溶解したフラックス中に、半導体装
置を浸漬するか、またはそのフラフクスを半導体装置の
パンケージの外に露出しているいわゆる外部リードに被
着する等の処理を行った後、溶融半田浴に外部リード１
１を浸漬することにより、ポンディングパッドの腐食防
止と外部リード１１の半田コートを同時に行った半導体
装置を提供するものである。Specifically, the semiconductor device is immersed in a flux in which sulfuric acid is dissolved to a predetermined concentration, for example, 1% or 2%, or the flux is exposed outside the pancage of the semiconductor device. After performing a process such as adhering to the so-called external lead, the external lead 1 is placed in a molten solder bath.
By dipping 1, a semiconductor device is provided in which the corrosion of the bonding pads is prevented and the external leads 11 are coated with solder at the same time.

本実施例に示す方法により得られた半導体装置について
、実施例３に示す試験と同一の強制試験を行ったところ
、実施例３と同様の結果が得られ、防食能を備えた半導
体装置の有効な製造方法であることが確認された。When the semiconductor device obtained by the method shown in this example was subjected to the same forced test as the test shown in Example 3, the same results as in Example 3 were obtained, and the effectiveness of the semiconductor device with anti-corrosion ability was confirmed. It was confirmed that this manufacturing method was suitable.

［効果］ （１）、電極または配線の少なくとも一方がアルミニウ
ム等からなる４４脂封止型半導体装置において、電極ま
たは配線の表面に硫酸イオンからなる薄膜を形成するこ
とにより、該電極または配線の腐食を有効に防止できる
半導体装置を提供することができる。[Effects] (1) In a 44 fat-sealed semiconductor device in which at least one of the electrodes or wiring is made of aluminum or the like, corrosion of the electrode or wiring is prevented by forming a thin film of sulfate ions on the surface of the electrode or wiring. It is possible to provide a semiconductor device that can effectively prevent this.

（２）、上記Ｔｌ）に示す半導体装置において、樹脂封
止前の電極または配線の表面を硫酸イオンを含む溶液、
たとえば数％の希硫酸で処理する工程を入れることによ
り、上記（１）に示す防食能を備えた半導体装置を製造
することができる。(2) In the semiconductor device shown in Tl) above, the surface of the electrode or wiring before resin sealing is coated with a solution containing sulfate ions.
For example, by adding a step of treatment with several percent dilute sulfuric acid, a semiconductor device having the anticorrosion ability shown in (1) above can be manufactured.

（３）、前記（１１に示す半導体装置において、樹脂封
止後にパンケージに間隙が生した半導体装置について、
該間隙より硫酸イオンを含む溶液を浸透せしめることに
より、該半導体装置内部の電極または配線の表面に硫酸
イオンからなる薄膜を形成し、その後の腐食から該電極
または配線を有効に保護する半導体装置を提供できる。(3) Regarding the semiconductor device shown in (11) above, in which a gap is created in the pan cage after resin sealing,
By infiltrating a solution containing sulfate ions through the gap, a thin film of sulfate ions is formed on the surface of the electrodes or wiring inside the semiconductor device, thereby effectively protecting the electrodes or wiring from subsequent corrosion. Can be provided.

（４）、上記（３）に示す硫酸イオンを含む溶液が半田
フラックス液である場合、パッケージに間隙を生した半
導体装置の外部リードを該フラックス液中に浸漬した後
に、該外部リードの半田ディツプを行うことにより、半
導体装置内部の電極または配線の防食処理と半田被着と
を同一工程で行うことができるため、作業工程が減少し
、またコストを低減できる。(4) If the solution containing sulfate ions shown in (3) above is a solder flux liquid, after immersing the external leads of a semiconductor device with gaps in the package into the flux liquid, the solder dips of the external leads are dipped into the flux liquid. By doing this, the anticorrosion treatment of the electrodes or wiring inside the semiconductor device and the soldering can be performed in the same process, which reduces the number of work steps and reduces costs.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、アルミニウム等からなるポンディングパッド
の表面に形成された硫酸イオンからなる薄膜は、分子サ
イズオーダーの厚さを有していれば十分であり、さらに
は、防食能力の面からみれば必ずしもポンディングパッ
ドの全面を覆っている必要はない。部分的に薄膜が形成
されていればその効力はポンディングパッド全体に及ぶ
性質を有していると考えられるからである。For example, it is sufficient for a thin film made of sulfate ions formed on the surface of a bonding pad made of aluminum or the like to have a thickness on the order of the molecular size, and furthermore, from the perspective of anti-corrosion ability, it is not necessary to make a thin film made of sulfate ions. It is not necessary to cover the entire surface of the dinging pad. This is because if a thin film is partially formed, its effect is thought to extend to the entire bonding pad.

また、実施例では硫酸イオンを含む溶液として、主に希
硫酸について説明したが、該溶液としては、たとえば硫
酸錫（ＳｎＳＯ４）または硫酸亜鉛（ＺｎＳＯ４）等を
含む溶液であってもよい。Furthermore, in the examples, dilute sulfuric acid was mainly explained as the solution containing sulfate ions, but the solution may also be a solution containing, for example, tin sulfate (SnSO4) or zinc sulfate (ZnSO4).

また、実施例では硫酸イオンからなる薄膜はポンディン
グパッド上のみに形成しているが、半導体ペレット表面
を覆うファイナルパッシベーション膜下のアルミニウム
配線層の表面に形成してもよい。この場合、アルミニウ
ム層は何層口であっても、配線を完成した状態で前述し
た処理を施セば前記薄膜を形成できる。Further, in the embodiment, the thin film made of sulfate ions is formed only on the bonding pad, but it may be formed on the surface of the aluminum wiring layer under the final passivation film covering the surface of the semiconductor pellet. In this case, no matter how many layers the aluminum layer has, the thin film can be formed by performing the above-described process with the wiring completed.

［利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である樹脂封止型パンケー
ジからなるＤＩＰ型半導体装置に適用した場合について
説明したが、それに限定されるものではなく、たとえば
、電極または配線材料がアルミニウム等からなるもので
あればセラミックパッケージ等からなる種々の半導体装
置に適用しても有効であることはいうまでもない。[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background thereof, which is a DIP type semiconductor device consisting of a resin-sealed pancage, but the invention is limited thereto. Needless to say, the present invention is effective even if applied to various semiconductor devices made of ceramic packages, etc., as long as the electrodes or wiring materials are made of aluminum or the like.

また、電極または配線は半導体ペレット上に形成された
ものである必要はない。たとえば、セラミックパッケー
ジのベース上に設けられた配線または電極や、リードの
先端のボンディングワイヤがボンディングされる部分（
リードボスト）に設けられたボンダビリティを改善する
ための電極（アルミニウム蒸着膜）であってもよい。Furthermore, the electrodes or wiring do not need to be formed on the semiconductor pellet. For example, the wiring or electrodes provided on the base of a ceramic package, or the part where the bonding wire at the tip of the lead is bonded (
It may also be an electrode (aluminum vapor deposited film) provided on a lead boss to improve bondability.

また、必ずしも半導体装置に限るものではなく、アルミ
ニウム等の材質からなる電極または配線等であればプリ
ント基板等如何なるものであっても広（通用できるもの
である。Further, the present invention is not necessarily limited to semiconductor devices, and can be widely applied to any type of electrode or wiring made of a material such as aluminum, such as a printed circuit board.

本発明の少なくともアルミニウム層のｍ食を防止しよう
とする場合に適用することができる。The present invention can be applied when attempting to prevent m-corrosion of at least an aluminum layer.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明による半導体装置の一実施例を示す概略
断面図、 第２図は本発明による半導体装置の製造方法の一実施例
を示す半導体装置の概略断面図である。 １・・・半導体装置、２・・・タブ、３・・・ペレット
、４・・・ボンディングパノ１−３５・　・・リード、
６・・・ワイヤ、７・・・樹脂、８・・・絶縁膜、９・
・・硫酸イオンからなる薄膜、１０・・・間隙、１１・
・・外部リード。FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a schematic cross-sectional view of a semiconductor device showing an embodiment of a method for manufacturing a semiconductor device according to the present invention. 1... Semiconductor device, 2... Tab, 3... Pellet, 4... Bonding pano 1-35... Lead,
6... Wire, 7... Resin, 8... Insulating film, 9...
... Thin film made of sulfate ions, 10... Gap, 11.
・External lead.

Claims (1)

【特許請求の範囲】 ■、組電極だは配線の少なくとも一方がアルミニウムま
たはアルミニウムを主成分とする合金である樹脂封止型
半導体装置において、電極または配線の表面に硫酸イオ
ンからなる薄膜を備えてなることを特徴とする半導体装
置。 ２、電極がポンディングパッドであることを特徴とする
特許請求の範囲第１項記載の半導体装置。 ３、電極または配線の少なくとも一方がアルミニウムま
たはアルミニウムを主成分とする合金である樹脂封止型
半導体装置の製造方法において、樹脂封止前に電極また
は配線の表面を硫酸イオンを含む／８液で処理し、該電
極または配線の表面に硫酸イオンからなる薄膜を形成す
ることを特徴とする半導体装置の製造方法。 ４、電極または配線の表面に硫酸イオンを含む溶液を直
接被着することを特徴とする特許請求の範囲第３項記載
の半導体装置の製造方法。 ５、電極または配線の少なくとも一方がアルミニウムま
たはアルミニウムを主成分とする合金である樹脂封止型
半導体装置の製造方法におＧ１て、４轟（脂封止後に半
導体装置を硫酸イオンを含む／８液で処理し、電極また
は配線の表面に硫酸イオン力・らなる薄膜を形成するこ
とを特徴とする半導体装置の製造方法。 ６、半導体装置を＠酸イオンを含む溶液中Ｇこ浸漬する
ことを特徴とする特許請求の範囲第５項ｉｔ！載の半導
体装置の製造方法。 ７、半導体装置の外部リードに硫酸イ、ｌｌ−ンを含む
゛溶液を被着させることを特徴とする特許請求の範囲第
５項記載の半導体装置の製造方法。 ８、硫酸イオンを含む溶液が半田フランクス液であるこ
とを特徴とする特許請求の範囲第５項、第６項または第
７項のいずれかに記載の半導体装置の製造方法。[Claims] (1) In a resin-sealed semiconductor device in which at least one of the electrode assembly or wiring is made of aluminum or an alloy mainly composed of aluminum, a thin film made of sulfate ions is provided on the surface of the electrode or wiring. A semiconductor device characterized by: 2. The semiconductor device according to claim 1, wherein the electrode is a bonding pad. 3. In a method for manufacturing a resin-encapsulated semiconductor device in which at least one of the electrodes or wiring is made of aluminum or an alloy mainly composed of aluminum, the surface of the electrode or wiring is coated with a solution containing sulfate ions before resin encapsulation. 1. A method for manufacturing a semiconductor device, comprising processing the electrode or wiring to form a thin film made of sulfate ions on the surface of the electrode or wiring. 4. A method for manufacturing a semiconductor device according to claim 3, characterized in that a solution containing sulfate ions is directly deposited on the surface of the electrode or wiring. 5. In the method for manufacturing a resin-encapsulated semiconductor device in which at least one of the electrodes or the wiring is aluminum or an alloy mainly composed of aluminum, in G1, 4 Todoroki (contains sulfate ions after sealing the semiconductor device with fat/8) A method for manufacturing a semiconductor device, which is characterized by forming a thin film of sulfate ions on the surface of an electrode or wiring by treating with a solution. 6. Dipping the semiconductor device in a solution containing acid ions. 7. A method of manufacturing a semiconductor device according to claim 5, characterized in that: 7. A method of manufacturing a semiconductor device as described in claim 5. A method for manufacturing a semiconductor device according to claim 5. 8. The method according to claim 5, 6 or 7, wherein the solution containing sulfate ions is a solder Franks solution. A method for manufacturing a semiconductor device.
JP58146322A 1983-08-12 1983-08-12 Semiconductor device and manufacture thereof Pending JPS6038849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146322A JPS6038849A (en) 1983-08-12 1983-08-12 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146322A JPS6038849A (en) 1983-08-12 1983-08-12 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6038849A true JPS6038849A (en) 1985-02-28

Family

ID=15405047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146322A Pending JPS6038849A (en) 1983-08-12 1983-08-12 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6038849A (en)

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