JPS62124757A - Sealing method for ic, and the like - Google Patents
Sealing method for ic, and the likeInfo
- Publication number
- JPS62124757A JPS62124757A JP26580385A JP26580385A JPS62124757A JP S62124757 A JPS62124757 A JP S62124757A JP 26580385 A JP26580385 A JP 26580385A JP 26580385 A JP26580385 A JP 26580385A JP S62124757 A JPS62124757 A JP S62124757A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- generation
- moisture
- resin
- ics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[技術分野]
この発明は、IC,LSI等のエポキシ樹脂を使用した
封止技術の分野に属する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention belongs to the field of sealing technology for ICs, LSIs, etc. using epoxy resin.
[背景技術]
IC,LSI等は従来より、エポキシ樹脂による封止法
が盛んであり、現在は大半がエポキシ樹脂による封止が
なされている。IC等の故障の原因は様々であるが、最
も大きな原因は外部の水分が封止材のバルクおよびリー
ドピンとの界面から内部へ侵入し、バルク中の塩素イオ
ン等と共にICの回路を形成しているアルミニュウム配
線を腐食させ、断線させてしまう場合である。また水の
侵入はリードピンと樹脂の接する界面からより、バルク
からの方が多量侵入している。[Background Art] Conventionally, ICs, LSIs, etc. have been widely encapsulated using epoxy resin, and most of them are currently encapsulated using epoxy resin. There are various causes of failures in ICs, etc., but the biggest cause is external moisture entering the interior through the bulk of the encapsulant and the interface with the lead pins, forming the IC circuit together with chlorine ions, etc. in the bulk. This is a case where the aluminum wiring that is in use corrodes and becomes disconnected. Furthermore, a larger amount of water enters from the bulk than from the interface where the lead pin and resin come into contact.
[発明の目的]
IC等のエポキシ樹脂による封止法において、より水分
の侵入を少なくすることにより、断線等が生じないよう
にする方法を提供することを目的とする。[Object of the Invention] It is an object of the present invention to provide a method for sealing ICs and the like with epoxy resin by further reducing the intrusion of moisture to prevent wire breakage and the like from occurring.
[発明の開示]
この発明は、従来のエポキシ樹脂封止剤の表面全体を疏
水性高分子材料により被覆し、外部からの水分が、バル
クを通して、IC等のチップ上に侵入しにくくすること
により、アルミニウム配線の断線を生じにくくすること
を特徴とする。[Disclosure of the Invention] This invention covers the entire surface of a conventional epoxy resin encapsulant with a hydrophobic polymer material, thereby making it difficult for moisture from the outside to penetrate through the bulk onto a chip such as an IC. , which is characterized by making aluminum wiring less likely to break.
この発明で使用される、疏水性高分子物質の種類ないし
その皮膜形成法としては、つぎのものが考えられる。The following types of hydrophobic polymeric substances and methods of forming a film thereof can be considered to be used in the present invention.
(11シリコン樹脂
■シリコン樹脂を溶剤(トルエン等)に溶かし、その溶
液中へエポキシ樹脂で封止したIC等を浸漬する。浸漬
の後、焼付硬化を行う。(11 Silicone Resin) Silicone resin is dissolved in a solvent (toluene, etc.), and an IC etc. sealed with epoxy resin is immersed in the solution. After immersion, baking is performed.
■エポキシ樹脂封止IC等の表面に、メチルクロルシラ
ンの蒸気を当て、表面の水酸基または結合水と化合させ
、メチルポリシロキサンの薄膜を造り、撥水化する。(2) Applying methylchlorosilane vapor to the surface of an epoxy resin-sealed IC, etc., combines it with the hydroxyl groups or bound water on the surface to form a thin film of methylpolysiloxane, making it water repellent.
(2)ポリエチレン、ポリプロピレン等。(2) Polyethylene, polypropylene, etc.
これらの樹脂は、150℃位の温度で液体となる。その
中へエポキシ樹脂封止ICを浸漬し、浸漬の後冷却する
ことにより、表面全面にポリエチレンあるいはポリプロ
ピレンの樹脂皮膜が形成される。ただし、この方法で完
成されたICは、耐熱性が低いため、ハンダ付けは出来
ないので、ICソケットを使用しなければならない。These resins become liquid at a temperature of about 150°C. By immersing an epoxy resin-encapsulated IC in the solution and cooling it after immersion, a polyethylene or polypropylene resin film is formed over the entire surface. However, ICs completed using this method have low heat resistance and cannot be soldered, so an IC socket must be used.
実施例
パッシベーション処理を行っていないアルミニュウム配
線チップを、市販のエポキシ樹脂封止剤で封止し、その
表面に前記の樹脂被覆法である、(1)−■、(1)−
〇、(2)の処理法を施し、耐湿信頼性のテストを実施
した。耐湿信頼性のテストは、85℃で、湿度85%の
恒温恒湿槽中に試料を放置し、n = 100における
平均不良発生時間を測定し、第1表に示した。Example An aluminum wiring chip that has not been subjected to passivation treatment is sealed with a commercially available epoxy resin sealant, and its surface is coated with the resin described above (1)-■, (1)-
The treatment method (2) was applied and a moisture resistance reliability test was conducted. In the humidity resistance reliability test, the sample was left in a constant temperature and humidity chamber at 85° C. and 85% humidity, and the average failure occurrence time at n = 100 was measured, and the results are shown in Table 1.
[以下余白]
第1表
[以下余白]
[発明の効果]
この発明は、封止用樹脂としてエポキシ樹脂を使用して
IC等を封止した後、エポキシ樹脂で構成された全面を
、疏水性高分子材料で被覆することを特徴とするので、
IC等の平均不良発生時間が長くなり、IC等の配線の
断線を生じにくくさせる効果が認められた。[Blank below] Table 1 [Blank below] [Effects of the invention] This invention provides a method for sealing an IC, etc. using an epoxy resin as a sealing resin, and then converting the entire surface made of the epoxy resin into a hydrophobic material. Since it is characterized by being coated with a polymer material,
It was found that the average failure occurrence time of ICs, etc. was increased, and the effect of making the wiring of ICs, etc. less likely to be disconnected was observed.
Claims (1)
を封止した後、エポキシ樹脂で構成された全面を、疏水
性高分子材料で被覆することを特徴とするIC等の封止
法(1) A method for encapsulating ICs, etc., which is characterized by encapsulating ICs, etc. using epoxy resin as a sealing resin, and then covering the entire surface made of epoxy resin with a hydrophobic polymer material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26580385A JPS62124757A (en) | 1985-11-25 | 1985-11-25 | Sealing method for ic, and the like |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26580385A JPS62124757A (en) | 1985-11-25 | 1985-11-25 | Sealing method for ic, and the like |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62124757A true JPS62124757A (en) | 1987-06-06 |
Family
ID=17422260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26580385A Pending JPS62124757A (en) | 1985-11-25 | 1985-11-25 | Sealing method for ic, and the like |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62124757A (en) |
-
1985
- 1985-11-25 JP JP26580385A patent/JPS62124757A/en active Pending
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