JPH06350000A - Surface treating agent of lead frame and manufacture of semiconductor integrated circuit device using the same - Google Patents
Surface treating agent of lead frame and manufacture of semiconductor integrated circuit device using the sameInfo
- Publication number
- JPH06350000A JPH06350000A JP5134539A JP13453993A JPH06350000A JP H06350000 A JPH06350000 A JP H06350000A JP 5134539 A JP5134539 A JP 5134539A JP 13453993 A JP13453993 A JP 13453993A JP H06350000 A JPH06350000 A JP H06350000A
- Authority
- JP
- Japan
- Prior art keywords
- group
- lead frame
- agent
- water
- coupling agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、リードフレームの表面
処理剤およびそれを用いた半導体集積回路装置の製造技
術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment agent for lead frames and a manufacturing technique for semiconductor integrated circuit devices using the same.
【０００２】[0002]
【従来の技術】従来、ＱＦＰ(Quad Flat Package) やＳ
ＯＪ(Small Outline J-lead Package)などの樹脂封止型
ＬＳＩパッケージの製造工程では、樹脂封止工程に先立
って、シランカップリング剤によるリードフレームの表
面処理が行われている。2. Description of the Related Art Conventionally, QFP (Quad Flat Package) and S
In a manufacturing process of a resin-sealed LSI package such as an OJ (Small Outline J-lead Package), a surface treatment of a lead frame with a silane coupling agent is performed before the resin-sealing process.
【０００３】例えば特開平２−２２９４４０号公報や特
開平３−６２９５９号公報には、ヘキサン−イソプロピ
ルアルコール混合溶媒に数％のシランカップリング剤を
溶かした表面処理剤の液液中にリードフレームを浸漬す
る表面処理技術が記載されている。For example, in JP-A-2-229440 and JP-A-3-62959, a lead frame is placed in a liquid of a surface treatment agent in which several percent of a silane coupling agent is dissolved in a hexane-isopropyl alcohol mixed solvent. Dipping surface treatment techniques are described.
【０００４】シランカップリング剤は、分子中に無機物
と反応する官能基（例えばアルコキシ基）と有機物と反
応する官能基（例えばアミノ基）とが存在するため、リ
ードフレームの表面にシランカップリング剤の被膜を形
成すると、このシランカップリング剤を介して無機物で
あるリードフレームと有機物である封止樹脂とが強固に
密着するようになる。Since the silane coupling agent has a functional group (for example, an alkoxy group) that reacts with an inorganic substance and a functional group (for example, an amino group) that reacts with an organic substance in the molecule, the silane coupling agent is present on the surface of the lead frame. When the coating film is formed, the lead frame, which is an inorganic material, and the sealing resin, which is an organic material, are firmly adhered to each other through the silane coupling agent.
【０００５】[0005]
【発明が解決しようとする課題】本発明者の検討によれ
ば、従来のシランカップリング剤によるリードフレーム
の表面処理技術には、下記のような問題がある。According to the study by the present inventor, the conventional surface treatment technique of a lead frame with a silane coupling agent has the following problems.
【０００６】すなわち、シランカップリング剤の溶媒と
して使用されるイソプロピルアルコールなどの有機溶剤
は、通常、微量の水を不純物として含有しており、さら
に空気中でも徐々に吸湿するため、場合によっては、実
使用時の含水率が１％前後になることもある。That is, an organic solvent such as isopropyl alcohol used as a solvent for a silane coupling agent usually contains a small amount of water as an impurity and gradually absorbs moisture even in the air. The water content during use may be around 1%.
【０００７】ところが、有機溶剤中に含まれる水は、シ
ランカップリング剤のアルコキシ基と反応してこれを加
水分解する作用があるため、実使用時に有機溶剤の含水
率が変動するとシランカップリング剤の特性も変動し、
リードフレームと封止樹脂との密着力にばらつきが生じ
てしまう。However, the water contained in the organic solvent reacts with the alkoxy group of the silane coupling agent to hydrolyze it, so that if the water content of the organic solvent fluctuates during actual use, the silane coupling agent will change. Characteristics also fluctuate,
The adhesive force between the lead frame and the sealing resin varies.
【０００８】本発明の目的は、リードフレームと封止樹
脂との密着力を向上させることのできる表面処理技術を
提供することにある。It is an object of the present invention to provide a surface treatment technique capable of improving the adhesion between the lead frame and the sealing resin.
【０００９】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１０】[0010]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
次のとおりである。Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.
【００１１】本発明のフレームの表面処理剤は、有機溶
剤−水混合溶媒にアルコキシシランカップリング剤を溶
かしたものである。この場合、混合溶媒中の水の割合
は、表面処理剤全量の0.５〜２0(V/V)％となるように調
整する。The surface treatment agent for the frame of the present invention is one in which an alkoxysilane coupling agent is dissolved in an organic solvent-water mixed solvent. In this case, the proportion of water in the mixed solvent is adjusted so as to be 0.5 to 20 (V / V)% of the total amount of the surface treatment agent.
【００１２】[0012]
【作用】上記した手段によれば、アルコキシシランカッ
プリング剤を溶かす有機溶媒中にあらかじめ水を加えて
おくことにより、その後、実使用時に表面処理剤が吸湿
した場合でも含水率は無視できる程度しか変動しないの
で、シランカップリング剤の特性が一定に維持される。According to the above means, water is added in advance to the organic solvent in which the alkoxysilane coupling agent is dissolved, so that even if the surface treatment agent absorbs moisture during actual use, the water content is negligible. Since it does not fluctuate, the properties of the silane coupling agent remain constant.
【００１３】[0013]
【実施例】以下、本発明の実施例である半導体集積回路
装置の製造方法を図面を用いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor integrated circuit device according to an embodiment of the present invention will be described below with reference to the drawings.
【００１４】まず、図１に示すように、アルコキシシラ
ンカップリング剤を溶かした表面処理剤の液中にリード
フレーム１を浸漬する。図中の符号２は、リードフレー
ム１のダイパッド部、３は同じくリードである。First, as shown in FIG. 1, the lead frame 1 is dipped in a liquid of a surface treatment agent in which an alkoxysilane coupling agent is dissolved. In the figure, reference numeral 2 is a die pad portion of the lead frame 1, and 3 is a lead.
【００１５】表面処理剤は、一例としてγ−（２−アミ
ノエチル）アミノプロピルトリメトキシシランをイソプ
ロピルアルコール−水混合溶媒に溶かしたものである。
シランカップリング剤の割合は、表面処理剤全量の0.０
5(V/V)％程度である。また、水の割合は、表面処理剤全
量の0.５〜２0(V/V)％の範囲に調整する。The surface treating agent is, for example, a solution of γ- (2-aminoethyl) aminopropyltrimethoxysilane dissolved in an isopropyl alcohol-water mixed solvent.
The ratio of the silane coupling agent is 0.0 of the total amount of the surface treatment agent.
It is about 5 (V / V)%. Further, the proportion of water is adjusted within the range of 0.5 to 20 (V / V)% of the total amount of the surface treatment agent.
【００１６】シランカップリング剤は、上記のものに限
らず、下記の一般式ＩまたはIIThe silane coupling agent is not limited to the above-mentioned ones, but is represented by the following general formula I or II.
【００１７】[0017]
【化２】 [Chemical 2]
【００１８】（式中、Ｒは炭素数１〜４のアルコキシ
基、Ｘはアミノ基、Ｙはエポキシ基、アミノ基、ビニル
基、メタクリロキシ基、メルカプト基、水酸基またはカ
ルボキシル基、ｎ，ｍはそれぞれ１〜２０の整数を表
す）で示される各種のアルコキシシランカップリング剤
を使用することができる。(Wherein R is an alkoxy group having 1 to 4 carbon atoms, X is an amino group, Y is an epoxy group, an amino group, a vinyl group, a methacryloxy group, a mercapto group, a hydroxyl group or a carboxyl group, and n and m are respectively Various alkoxysilane coupling agents represented by (representing an integer of 1 to 20) can be used.
【００１９】溶媒もイソプロピルアルコール−水混合溶
媒に限らず、シランカップリング剤の種類に応じて、ア
ルコール系、芳香族炭化水素系、ケトン系、エステル
系、エーテル系、セロソルブ系、あるいはこれらの２種
以上を含む各種有機溶剤と水との混合溶媒を使用するこ
とができる。The solvent is not limited to the isopropyl alcohol-water mixed solvent, but may be an alcohol type, an aromatic hydrocarbon type, a ketone type, an ester type, an ether type, a cellosolve type, or a combination thereof depending on the type of the silane coupling agent. A mixed solvent of various organic solvents containing at least one species and water can be used.
【００２０】上記した各種シランカップリング剤、混合
溶媒のいずれを使用する場合でも、吸湿などによる表面
処理剤の含水率の変動を無視できる程度に抑えるために
は、表面処理剤全量の0.5(V/V)％以上の水を添加してお
く必要があるが、水の含有率が高すぎると表面処理効果
が低下するため、２0(V/V)％程度を上限とする。Regardless of whether any of the above-mentioned various silane coupling agents and mixed solvents are used, in order to suppress the fluctuation of the water content of the surface treatment agent due to moisture absorption etc. to a negligible level, 0.5% of the total amount of the surface treatment agent is used. / V)% or more of water needs to be added in advance, but if the content of water is too high, the surface treatment effect decreases, so the upper limit is approximately 20 (V / V)%.
【００２１】次に、表面処理剤の液中からリードフレー
ム１を取り出し、表面に残留した液をエアーブローなど
で除去した後、風乾により予備乾燥を行い、次いで２８
０℃、１時間程度の熱処理を行って、リードフレーム１
の表面にシランカップリング剤の被膜を形成する。被膜
の厚さは、シランカップリング剤１〜９分子層程度とす
るのが好適である。Next, the lead frame 1 is taken out of the liquid of the surface treatment agent, the liquid remaining on the surface is removed by air blow or the like, and then pre-dried by air drying, and then 28
After heat treatment at 0 ° C for about 1 hour, the lead frame 1
A film of a silane coupling agent is formed on the surface of. The thickness of the coating is preferably about 1 to 9 molecular layers of the silane coupling agent.
【００２２】次に、図２に示すように、リードフレーム
１のダイパッド部２に半導体チップ４を接合し、次い
で、図３に示すように、半導体チップ４とリード３とを
ワイヤ５で電気的に接続する。Next, as shown in FIG. 2, the semiconductor chip 4 is joined to the die pad portion 2 of the lead frame 1, and then, as shown in FIG. Connect to.
【００２３】次に、図４に示すように、半導体チップ４
を樹脂６で封止する。その後、樹脂６の外部に露出した
リード３のメッキ処理、切断を行い、最後にリード３を
フォーミングして図５に示すＬＳＩパッケージ７を得
る。Next, as shown in FIG. 4, the semiconductor chip 4
Is sealed with resin 6. Thereafter, the lead 3 exposed to the outside of the resin 6 is plated and cut, and finally the lead 3 is formed to obtain the LSI package 7 shown in FIG.
【００２４】下記の表１は、前記の表面処理剤（γ−
（２−アミノエチル）アミノプロピルトリメトキシシラ
ンをイソプロピルアルコール−水混合溶媒に溶かしたも
の）で処理したリードフレームを使って組立てたＱＦＰ
を８５℃、８５％ＲＨ（相対湿度）の条件下で所定時間
（７２時間、１６８時間、３３６時間、６７２時間）吸
湿させた後、ＶＰＳ(Vapor Phase Soldering) 法で半田
リフローした場合のダイパッド部裏面と樹脂との界面の
剥離発生頻度を示している。比較のため、エポキシ系シ
ランカップリング剤を上記の溶媒に溶かした表面処理剤
で処理した場合と無処理の場合の剥離発生頻度を同表に
示す。表中の分数は、分母が処理数、分子が剥離発生数
を表している。Table 1 below shows the surface treatment agent (γ-
QFP assembled using a lead frame treated with (2-aminoethyl) aminopropyltrimethoxysilane dissolved in an isopropyl alcohol-water mixed solvent)
After 85 ° C and 85% RH (relative humidity) for a specified time (72 hours, 168 hours, 336 hours, 672 hours) to absorb moisture, and then reflow solder by the VPS (Vapor Phase Soldering) method. The frequency of peeling at the interface between the back surface and the resin is shown. For comparison, the same table shows the occurrence frequency of peeling when the epoxy-based silane coupling agent was treated with the surface treatment agent dissolved in the above solvent and when it was not treated. In the fractions in the table, the denominator represents the number of treatments, and the numerator represents the number of peeling occurrences.
【００２５】[0025]
【表１】 [Table 1]
【００２６】表１から明らかなように、本実施例の表面
処理剤で処理したものは、比較例に比べて吸湿後の半田
リフロー耐性が明らかに優れている。As can be seen from Table 1, those treated with the surface treatment agent of this example are clearly superior in solder reflow resistance after moisture absorption as compared with the comparative example.
【００２７】図６に示すグラフの縦軸は、前記のγ−
（２−アミノエチル）アミノプロピルトリメトキシシラ
ン0.０5(V/V)％をイソプロピルアルコール−水混合溶媒
に溶かした表面処理剤で処理したリードフレームと樹脂
との剪断接着強度を示し、横軸は、この表面処理剤３０
０ｃｍ3 に添加した水の量を示している。同図から明ら
かなように、適量の水を添加することにより、無処理の
ものに比べて剪断接着強度が大幅に向上した。The vertical axis of the graph shown in FIG. 6 represents the above-mentioned γ-
(2-Aminoethyl) aminopropyltrimethoxysilane 0.05 (V / V)% 0.05% (V / V)% in the isopropyl alcohol-water mixed solvent is treated with a surface treatment agent. Is the surface treatment agent 30
The amount of water added to 0 cm 3 is shown. As is clear from the figure, by adding an appropriate amount of water, the shear adhesive strength was significantly improved as compared with the untreated one.
【００２８】図７に示すグラフの縦軸は、樹脂封止前に
リードフレームを室温、１００％ＲＨの条件下に所定時
間放置した後、上記の表面処理剤で処理したリードフレ
ームと樹脂との剪断接着強度を示し、横軸は、放置時間
を示している。同図から明らかなように、リードフレー
ムを高湿条件下に放置した場合でも、無処理のものに比
べて剪断接着強度の大幅な向上が見られた。The vertical axis of the graph shown in FIG. 7 represents the resin and the lead frame treated with the above-mentioned surface treatment agent after the lead frame was left under a condition of room temperature and 100% RH for a predetermined time before resin sealing. The shear adhesive strength is shown, and the horizontal axis shows the standing time. As is clear from the figure, even when the lead frame was left under high humidity conditions, the shear adhesive strength was significantly improved as compared with the untreated one.
【００２９】[0029]
【発明の効果】本願によって開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下の通りである。The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.
【００３０】本発明の表面処理剤を使用することによ
り、シランカップリング剤の特性を一定に維持すること
ができるので、リードフレームと封止樹脂とを強固に密
着させることができ、半導体集積回路装置の信頼性、製
造歩留りを向上させることができる。By using the surface-treating agent of the present invention, the characteristics of the silane coupling agent can be maintained constant, so that the lead frame and the sealing resin can be firmly adhered to each other, and the semiconductor integrated circuit. The reliability of the device and the manufacturing yield can be improved.
【図１】本発明の実施例である半導体集積回路装置の製
造方法を示す断面図である。FIG. 1 is a cross-sectional view showing a method for manufacturing a semiconductor integrated circuit device which is an embodiment of the present invention.
【図２】本発明の実施例である半導体集積回路装置の製
造方法を示す断面図である。FIG. 2 is a cross-sectional view showing a method of manufacturing a semiconductor integrated circuit device which is an embodiment of the present invention.
【図３】本発明の実施例である半導体集積回路装置の製
造方法を示す断面図である。FIG. 3 is a cross-sectional view showing the method of manufacturing the semiconductor integrated circuit device which is the embodiment of the present invention.
【図４】本発明の実施例である半導体集積回路装置の製
造方法を示す断面図である。FIG. 4 is a cross-sectional view showing the method of manufacturing the semiconductor integrated circuit device which is the embodiment of the present invention.
【図５】本発明の実施例である半導体集積回路装置の製
造方法を示す断面図である。FIG. 5 is a cross-sectional view showing the method of manufacturing the semiconductor integrated circuit device which is the embodiment of the present invention.
【図６】表面処理剤に添加した水の量と剪断接着強度と
の関係を示すグラフである。FIG. 6 is a graph showing the relationship between the amount of water added to the surface treatment agent and the shear adhesive strength.
【図７】リードフレームを高湿条件下に放置した時間と
剪断接着強度との関係を示すグラフである。FIG. 7 is a graph showing the relationship between the time of leaving the lead frame under high humidity conditions and the shear adhesive strength.
１ リードフレーム ２ ダイパッド部 ３ リード ４ 半導体チップ ５ ワイヤ ６ 樹脂 ７ ＬＳＩパッケージ 1 lead frame 2 die pad part 3 lead 4 semiconductor chip 5 wire 6 resin 7 LSI package
───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐通 祐一 茨城県日立市久慈町4026番地 株式会社日 立製作所日立研究所内 (72)発明者 大塚 寛治 東京都青梅市今井2326番地 株式会社日立 製作所デバイス開発センタ内 (72)発明者 白井 優之 東京都青梅市今井2326番地 株式会社日立 製作所デバイス開発センタ内 (72)発明者 宮崎 邦夫 茨城県日立市久慈町4026番地 株式会社日 立製作所日立研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuichi Sado 4026 Kujimachi, Hitachi City, Hitachi, Ibaraki Prefecture Hitachi Research Laboratory, Ltd. (72) Inventor Kanji Otsuka 2326 Imai, Ome City, Tokyo Hitachi, Ltd. Device Inside the development center (72) Inventor Yuu Shirai 2326 Imai, Ome-shi, Tokyo Hitachi, Ltd. Device Development Center (72) Inventor Kunio Miyazaki 4026 Kuji-machi, Hitachi City, Ibaraki Hitachi Institute of Hitachi, Ltd.
Claims (5)
溶剤および0.５〜２0(V/V)％の水を含有してなるリード
フレームの表面処理剤。1. A surface treatment agent for a lead frame, which comprises an alkoxysilane coupling agent, an organic solvent, and 0.5 to 20 (V / V)% water.
は、下記の一般式ＩまたはII 【化１】 （式中、Ｒは炭素数１〜４のアルコキシ基、Ｘはアミノ
基、Ｙはエポキシ基、アミノ基、ビニル基、メタクリロ
キシ基、メルカプト基、水酸基またはカルボキシル基、
ｎ，ｍはそれぞれ１〜２０の整数を表す）で示されるア
ルコキシシランであることを特徴とする請求項１記載の
リードフレームの表面処理剤。2. The alkoxysilane coupling agent is represented by the following general formula I or II: (In the formula, R is an alkoxy group having 1 to 4 carbon atoms, X is an amino group, Y is an epoxy group, an amino group, a vinyl group, a methacryloxy group, a mercapto group, a hydroxyl group or a carboxyl group,
The surface treating agent for a lead frame according to claim 1, which is an alkoxysilane represented by the formula (n, m each represents an integer of 1 to 20).
ードフレームを処理した後、前記リードフレームのダイ
パッド上に半導体チップを搭載し、前記半導体チップと
リードとを電気的に接続した後、前記半導体チップを樹
脂封止することを特徴とする半導体集積回路装置の製造
方法。3. After treating the lead frame with the surface treatment agent according to claim 1, mounting a semiconductor chip on the die pad of the lead frame, and electrically connecting the semiconductor chip and the lead, A method for manufacturing a semiconductor integrated circuit device, comprising encapsulating the semiconductor chip with a resin.
層のアルコキシシランカップリング剤を被着させること
を特徴とする請求項３記載の半導体集積回路装置の製造
方法。4. The method for manufacturing a semiconductor integrated circuit device according to claim 3, wherein an alkoxysilane coupling agent having 1 to 9 molecular layers is applied to the surface of the lead frame.
に浸漬することを特徴とする請求項３または４記載の半
導体集積回路装置の製造方法。5. The method of manufacturing a semiconductor integrated circuit device according to claim 3, wherein the lead frame is dipped in a liquid of a surface treatment agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5134539A JPH06350000A (en) | 1993-06-04 | 1993-06-04 | Surface treating agent of lead frame and manufacture of semiconductor integrated circuit device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5134539A JPH06350000A (en) | 1993-06-04 | 1993-06-04 | Surface treating agent of lead frame and manufacture of semiconductor integrated circuit device using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06350000A true JPH06350000A (en) | 1994-12-22 |
Family
ID=15130687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5134539A Withdrawn JPH06350000A (en) | 1993-06-04 | 1993-06-04 | Surface treating agent of lead frame and manufacture of semiconductor integrated circuit device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06350000A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6054255A (en) * | 1996-08-01 | 2000-04-25 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treating agent |
| US6133465A (en) * | 1996-10-16 | 2000-10-17 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treatment agent |
| US6174650B1 (en) | 1997-01-23 | 2001-01-16 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method and apparatus for semiconductor device |
| US6258972B1 (en) | 1995-08-03 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treating agent |
| US7354978B2 (en) | 2003-10-20 | 2008-04-08 | Sumitomo Bakelite Co. | Semiconductor encapsulant of epoxy resin, phenolic resin and triazole compound |
| WO2009028156A1 (en) * | 2007-08-29 | 2009-03-05 | Panasonic Corporation | Wiring member, metal component with resin and resin sealed semiconductor device, and processes for producing them |
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-
1993
- 1993-06-04 JP JP5134539A patent/JPH06350000A/en not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258972B1 (en) | 1995-08-03 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treating agent |
| US6054255A (en) * | 1996-08-01 | 2000-04-25 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treating agent |
| US6133465A (en) * | 1996-10-16 | 2000-10-17 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and surface treatment agent |
| US6174650B1 (en) | 1997-01-23 | 2001-01-16 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method and apparatus for semiconductor device |
| US7354978B2 (en) | 2003-10-20 | 2008-04-08 | Sumitomo Bakelite Co. | Semiconductor encapsulant of epoxy resin, phenolic resin and triazole compound |
| US9017822B2 (en) | 2006-03-03 | 2015-04-28 | Panasonic Intellectual Property Management Co., Ltd. | Wiring member, resin-coated metal part and resin-sealed semiconductor device, and manufacturing method for the resin-coated metal part and the resin-sealed semiconductor device |
| JP5519282B2 (en) * | 2007-08-29 | 2014-06-11 | パナソニック株式会社 | Manufacturing method of metal parts with resin and metal parts with resin |
| WO2009028156A1 (en) * | 2007-08-29 | 2009-03-05 | Panasonic Corporation | Wiring member, metal component with resin and resin sealed semiconductor device, and processes for producing them |
| JP2012231115A (en) * | 2010-10-22 | 2012-11-22 | Panasonic Corp | Surface-mounting type light-emitting device, and dry-type unsaturated polyester resin composition, granular material, pellet and crashed processed product used for manufacture thereof |
| JP2013131595A (en) * | 2011-12-21 | 2013-07-04 | Hitachi Ltd | Method for joining metal member and resin together and assembly of metal member and resin |
| US10557061B2 (en) | 2011-12-26 | 2020-02-11 | Dic Corporation | Adhesive tape |
| JP5930566B1 (en) * | 2014-09-29 | 2016-06-08 | 新電元工業株式会社 | Semiconductor package manufacturing method and semiconductor package |
| CN105684142A (en) * | 2014-09-29 | 2016-06-15 | 新电元工业株式会社 | Method for manufacturing target material for cylindrical sputtering target and cylindrical sputtering target |
| US9548262B2 (en) | 2014-09-29 | 2017-01-17 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor package and semiconductor package |
| CN105684142B (en) * | 2014-09-29 | 2018-05-08 | 新电元工业株式会社 | The manufacture method and semiconductor package part of semiconductor package part |
| WO2020085372A1 (en) * | 2018-10-24 | 2020-04-30 | 住友ベークライト株式会社 | Electrically conductive resin composition and semiconductor device |
| JPWO2020085372A1 (en) * | 2018-10-24 | 2021-09-02 | 住友ベークライト株式会社 | Conductive resin compositions and semiconductor devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000905 |