JPS6037724A - Manufacture of thin film semiconductor device - Google Patents
Manufacture of thin film semiconductor deviceInfo
- Publication number
- JPS6037724A JPS6037724A JP14703383A JP14703383A JPS6037724A JP S6037724 A JPS6037724 A JP S6037724A JP 14703383 A JP14703383 A JP 14703383A JP 14703383 A JP14703383 A JP 14703383A JP S6037724 A JPS6037724 A JP S6037724A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- thin film
- semiconductor device
- film semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910001415 sodium ion Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
本発明Ｉ−１：薄膜半導体装置の製造方法に１６１する
。DETAILED DESCRIPTION OF THE INVENTION The present invention I-1: A method for manufacturing a thin film semiconductor device.
従来、薄膜半導体装置１ｉ、Ｎｔｈ含有のないサファイ
ヤ基板あるいは石英基板上に形成されて成るのが、加工
処理工程中にＮａ汚染がなく、特性が安定するとの理由
から、通常であった。Conventionally, the thin film semiconductor device 1i has usually been formed on a sapphire substrate or a quartz substrate that does not contain Nth because there is no Na contamination during the processing process and the characteristics are stable.
しかし、上記従来技術によると、サファイヤ基板や石英
基板のコストが茜く、薄膜半導体装置の本発明は、かか
る従来技術の欠点をなくし、ガラス基板に薄膜半導体ｉ
ｔを形成しても特性厚動かなく、低コストで薄膜半導体
装置を製造できる方法を提供することを目的とする。However, according to the above-mentioned prior art, the cost of the sapphire substrate or the quartz substrate is expensive, and the present invention of the thin film semiconductor device eliminates the drawbacks of the prior art, and the thin film semiconductor i
It is an object of the present invention to provide a method for manufacturing a thin film semiconductor device at low cost without changing the characteristic thickness even if the thickness is formed.
上記目的を連成するための本発明の基本的な構成は、薄
膜半導体装置の製造方法に関し、ガラス基板上の生導体
膜生成および加熱を伴う加工、処理工程等に於て、半導
体膜が形成される面からガラス基板底面に向けて負の電
界を開力ｎしつつ、前記力０工、処理全施すことを特徴
とする。The basic structure of the present invention to achieve the above objects is related to a method for manufacturing a thin film semiconductor device, in which a semiconductor film is formed in processing and processing steps that involve production and heating of a raw conductor film on a glass substrate. The process is characterized in that the entire process is performed with zero force while applying a negative electric field from the surface to the bottom surface of the glass substrate.
以下、実施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す薄膜半導体装置の加工
・処理法、の模式図である。い丑、ガラス基板１上に５
ｉｏ２Ｂ’Ａ２を形Ｄ！ｌ、、その上にＳｉ膜６を形成
し、該Ｓｉ膜５をレーザー・アニールでアニールする場
合に、ガラス基板１を陰極板４にのせ、Ｓｉ膜５の上部
に陽擾板を設ける等して、電界をガラス基板底面に向幻
て負になるように電γ原から印加すると、レーザー、ア
ニール膜に加熱の方向に熱拡散するのを電界によりｂｔ
ａをガラス基板１の裏面側に引張って防止することがで
きる様子を示している。FIG. 1 is a schematic diagram of a method of processing and processing a thin film semiconductor device showing an embodiment of the present invention. 5 on glass substrate 1
io2B'A2 is shaped like D! l. When a Si film 6 is formed thereon and the Si film 5 is annealed by laser annealing, the glass substrate 1 is placed on the cathode plate 4 and a positive plate is provided on the top of the Si film 5. When an electric field is applied from the electric gamma source so that it becomes negative toward the bottom surface of the glass substrate, the electric field causes bt to diffuse into the laser and annealed film in the direction of heating.
This figure shows how this can be prevented by pulling a to the back side of the glass substrate 1.
前記の如く、本発明によるとガラス基板上に特種の安定
な薄膜半導体装置を低コストで製作できる効果がある。As described above, the present invention has the advantage that a particularly stable thin film semiconductor device can be manufactured on a glass substrate at low cost.
本発明は薄膜半導体装置の製造工程におけるレーザー、
アニール工程に限らず、ｃ Ｖ Ｄ ５ｊＯ２１１Ｍ形
成工程、ＡＬ蒸看工程、ウェット、及びドライエンチン
グ工程、ベーキング工程等。物理的あるいは化学的処理
工程の全工程Ｖ（適用できるばかりでなく、必ずしも加
熱工程のみならず常温での処理工程にも適用できる。The present invention relates to a laser used in the manufacturing process of a thin film semiconductor device,
Not limited to annealing process, but also cVD5jO211M forming process, AL vaporizing process, wet and dry etching process, baking process, etc. Not only can it be applied to all physical or chemical treatment steps (V), but it can also be applied not only to heating steps but also to treatment steps at room temperature.
第１図は本発明の一実施例を示す薄膜半導体装置製造の
一処理工程の模式図である。
１・・・・・・ガラス基板、２・・・・・・ｓｉｏ、、
ｌＥ４．６・・・・・・５１０２膜、 ４・・・・・・
陰極膜、５・・・・・・電υ車。
Ａ？）
↓
易 １ １ｆｆｌFIG. 1 is a schematic diagram of one processing step of manufacturing a thin film semiconductor device showing an embodiment of the present invention. 1... glass substrate, 2... sio,,
lE4.6...5102 membrane, 4...
Cathode membrane, 5...Electric train. A? ) ↓ Easy 1 1ffl
Claims (1)
ｌ：伴う加工、処理工程等に於て、半導体膜が形成され
る面からガラス基板底面に向けて負の電界を印加しつつ
、前記加工、処理を柿すことを１特徴とする薄膜半導体
装置の製造方法。(1) Semiconductor 11@generation and addition on glass substrate! J
l: A thin film semiconductor device characterized in that during the associated processing, processing, etc., a negative electric field is applied from the surface on which the semiconductor film is formed to the bottom surface of the glass substrate. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14703383A JPS6037724A (en) | 1983-08-10 | 1983-08-10 | Manufacture of thin film semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14703383A JPS6037724A (en) | 1983-08-10 | 1983-08-10 | Manufacture of thin film semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6037724A true JPS6037724A (en) | 1985-02-27 |
Family
ID=15421011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14703383A Pending JPS6037724A (en) | 1983-08-10 | 1983-08-10 | Manufacture of thin film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037724A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321364A (en) * | 1995-04-28 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| KR100361204B1 (en) * | 1999-12-22 | 2002-11-18 | 주식회사 하이닉스반도체 | Method of manufacturing a semiconductor device |
| JP2008251287A (en) * | 2007-03-29 | 2008-10-16 | Japan Steel Works Ltd:The | Crystallization method and crystallization device of thin film |
-
1983
- 1983-08-10 JP JP14703383A patent/JPS6037724A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| JPH07321364A (en) * | 1995-04-28 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| KR100361204B1 (en) * | 1999-12-22 | 2002-11-18 | 주식회사 하이닉스반도체 | Method of manufacturing a semiconductor device |
| JP2008251287A (en) * | 2007-03-29 | 2008-10-16 | Japan Steel Works Ltd:The | Crystallization method and crystallization device of thin film |
| JP4656441B2 (en) * | 2007-03-29 | 2011-03-23 | 株式会社日本製鋼所 | Method and apparatus for crystallizing thin film |
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