JPS6037632A - Thick film fuse and method of producing same - Google Patents

Thick film fuse and method of producing same

Info

Publication number
JPS6037632A
JPS6037632A JP14448583A JP14448583A JPS6037632A JP S6037632 A JPS6037632 A JP S6037632A JP 14448583 A JP14448583 A JP 14448583A JP 14448583 A JP14448583 A JP 14448583A JP S6037632 A JPS6037632 A JP S6037632A
Authority
JP
Japan
Prior art keywords
layer
fuse
insulating substrate
thick film
resin paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14448583A
Other languages
Japanese (ja)
Other versions
JPS6046507B2 (en
Inventor
渡辺 重信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP58144485A priority Critical patent/JPS6046507B2/en
Publication of JPS6037632A publication Critical patent/JPS6037632A/en
Publication of JPS6046507B2 publication Critical patent/JPS6046507B2/en
Expired legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、厚膜ヒユーズ及びその製造方法に関する。[Detailed description of the invention] The present invention relates to a thick film fuse and a method for manufacturing the same.

通當、厚膜ヒユーズはセラミック等の絶縁基板上に導電
ペーストを印刷して接続端子層とヒユーズ層を形成し、
次いで該導電ペーストを焼成することにより構成されて
いる。
Generally, thick film fuses are made by printing conductive paste on an insulating substrate such as ceramic to form a connecting terminal layer and a fuse layer.
The conductive paste is then fired.

上記厚膜ヒユーズでは、絶縁基板の表面に密着した状態
となっているため、過電流が流れても放熱されて溶断し
にくい問題があった。゛また、基板形状等により放熱条
件が変化するために、溶断特性に大きなバラツキがある
問題があった。さらに、ヒユーズを構成しているW膜は
基板に対し物理的、化学的に密着していて、溶断状態を
確認しにくい問題があった。
In the above-mentioned thick film fuse, since it is in close contact with the surface of the insulating substrate, there is a problem that even if an overcurrent flows, heat is dissipated and it is difficult to blow out. Furthermore, since the heat dissipation conditions change depending on the shape of the substrate, etc., there is a problem in that there is large variation in the fusing characteristics. Furthermore, the W film constituting the fuse is physically and chemically in close contact with the substrate, making it difficult to confirm the blown state.

これらの問題を解決するため、例えばヒユーズ層と基板
との間にガラス等の断熱層を介在して放熱をおさえたり
、あるいはヒユーズ層の一部にくびれを設けて電流密度
を局部的に高めることにより溶断特性を向上させること
が考えられるが、いずれの場合も溶断状態が確認しにく
いという問題が解決できず、また溶断時の熱により基板
温度が上昇する問題があった。
To solve these problems, for example, it is possible to suppress heat radiation by interposing a heat insulating layer such as glass between the fuse layer and the substrate, or to locally increase the current density by creating a constriction in a part of the fuse layer. Although it is conceivable that the fusing characteristics can be improved by the following, in either case, the problem of difficulty in confirming the fusing state cannot be solved, and there is also the problem that the substrate temperature increases due to the heat generated during the fusing.

本発明は上記事情に鑑みてなされたもので、その目的と
するところは、溶断特性に優れ、溶断状態の確認が容易
で、かつ溶断時における基板温度の上昇が少ない厚膜ヒ
ユーズ及びその製造方法を提供することである。
The present invention has been made in view of the above circumstances, and its object is to provide a thick film fuse that has excellent fusing characteristics, allows easy confirmation of the fusing state, and reduces substrate temperature rise during fusing, and a method for manufacturing the same. The goal is to provide the following.

以下本発明の一実施例を図面を参照して説明する。An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の厚膜ヒユーズの一例を示す斜視図であ
る。図中符号1は絶縁基板で、アルミナ(Aρ203)
、ガラス等により形成されている。
FIG. 1 is a perspective view showing an example of the thick film fuse of the present invention. Reference number 1 in the figure is an insulating substrate made of alumina (Aρ203).
, glass, etc.

絶縁基板1上には接続端子1i−i2 v 2が形成さ
れていると共に、該接続端子層2,2間にヒユーズN3
が絶縁基板10表面との間に隙間4をおいて形成されて
いて、該隙間4が空気断熱層となっている。
Connection terminals 1i-i2v2 are formed on the insulating substrate 1, and a fuse N3 is provided between the connection terminal layers 2, 2.
is formed with a gap 4 between it and the surface of the insulating substrate 10, and the gap 4 serves as an air insulation layer.

接続端子層2,2は絶縁基板1上に形成した導電ベース
ト5上にハンダ合金等の金属層6を積層して形成されて
いて、全体の厚さは100〜200μ程度に認定されて
いる。また、ヒユーズN3ば金属R6のみで形成されて
いて、厚さは60〜180μ程度で巾は接続端子層2,
2のほぼ3分の1程度に設定されている。また隙間4の
高さは20〜40μ程度に設定されている。
The connection terminal layers 2, 2 are formed by laminating a metal layer 6 such as a solder alloy on a conductive base 5 formed on an insulating substrate 1, and have a total thickness of about 100 to 200 μm. Further, fuse N3 is formed only of metal R6, has a thickness of about 60 to 180μ, and a width of connection terminal layer 2,
It is set to approximately one-third of 2. Further, the height of the gap 4 is set to about 20 to 40μ.

次に上記厚膜ヒユーズの製造方法の一例を第2図a、b
〜第6図a、hを参照して説明する。
Next, an example of the method for manufacturing the above-mentioned thick film fuse is shown in FIGS. 2a and 2b.
This will be explained with reference to FIGS. 6a and 6h.

まず、第2図a、bに示すように、絶縁基板1の表面の
接続端子層2,2(第1図参照)となる位置にスクリー
ン印刷時の手段でポリイミド系またはザーメット系の導
電ペースト層5を形成し、この後ヒユーズ層3 (第1
図参照)となる位置に同様にスクリーン印刷等の手段で
エポキシ系の樹脂ベースト屓7をその一部が導電ペース
トN5上にランプする如く形成する。
First, as shown in FIGS. 2a and 2b, a layer of polyimide-based or cermet-based conductive paste is applied to the surface of the insulating substrate 1 at positions that will become the connection terminal layers 2, 2 (see FIG. 1) by means of screen printing. 5 is formed, and then fuse layer 3 (first
Similarly, an epoxy resin base layer 7 is formed at the position shown in FIG.

導電ペースト層5、樹脂ペースI−kt 7を形成する
ペーストとじては、ともにハンダ付は性(可溶体の付着
(塗布等)性)を有するものを使用する。
The pastes forming the conductive paste layer 5 and the resin paste I-kt 7 are both suitable for soldering (adhesion (coating, etc.) of fusible materials).

また、樹脂ペースト層7を形成するペーストは後工程で
有機溶剤等により溶解して容易に除去されるものを使用
する。
Furthermore, the paste used to form the resin paste layer 7 is one that can be easily removed by being dissolved with an organic solvent or the like in a subsequent process.

次いで、上記導電ペースト層5、樹脂ペースト層7をヘ
ークして、第3図a、bに示すように、樹脂ペースト層
7の上面の一部と側面全体を覆う如(カバー8,8を取
付ける。
Next, the conductive paste layer 5 and the resin paste layer 7 are hacked together to cover a part of the upper surface and the entire side surface of the resin paste layer 7 (with the covers 8 and 8 attached), as shown in FIGS. 3a and 3b. .

この後、第4図a、bに示すように、導電ペースト層5
上と樹脂ペースト層7の露呈した部分とに印刷、溶融ま
たはディッピング等の手段によりハンダ合金等からなる
金属層6を形成する。これにより、導電ペースト屓5と
金属層6を積層してなる接続端子層2,2と金属1)f
6からなるヒユーズN3とが形成される。
After this, as shown in FIGS. 4a and 4b, the conductive paste layer 5
A metal layer 6 made of a solder alloy or the like is formed on the exposed portion of the resin paste layer 7 by printing, melting, dipping, or the like. As a result, the connection terminal layers 2, 2 formed by laminating the conductive paste layer 5 and the metal layer 6 and the metal 1) f
A fuse N3 consisting of 6 is formed.

然る後、カバー8,8を外して(第5図a、b参照)、
アセトン等の有ta/8剤を使用し溶解度の差により樹
脂ペースト層7のみを除去する。これにより、第6図a
、bに示すように、ヒユーズ層3と絶縁基板1の表面と
の間に樹脂ペーストN7に対応した形状の隙間4が形成
される。
After that, remove the covers 8, 8 (see Fig. 5 a, b),
Using a TA/8 agent such as acetone, only the resin paste layer 7 is removed due to the difference in solubility. As a result, Figure 6a
, b, a gap 4 having a shape corresponding to the resin paste N7 is formed between the fuse layer 3 and the surface of the insulating substrate 1.

次に上記厚膜ヒユーズの作用を説明する。Next, the action of the thick film fuse will be explained.

ヒユーズ層3に過電流が流れると、該ヒユーズ層3はジ
ュール熱により加熱され、溶断のための熱エネルギーが
順次蓄積される。このとき、ヒユーズN3は空気を断熱
層としており、また絶縁基板1との接続は接続端子層2
,2のみで熱伝導による放熱も少ないことにより、ヒユ
ーズ層3からは熱の放散も少なく時間の経過とともに温
度が急激に上昇する。なお、絶縁基板1がヒユーズM3
の放熱板として作用することがほとんどないので、絶縁
基板1の形状、大きさによる放熱の差の影響を受けに<
<、温度上昇にバラツキがない。
When an overcurrent flows through the fuse layer 3, the fuse layer 3 is heated by Joule heat, and thermal energy for blowing is sequentially accumulated. At this time, the fuse N3 uses air as a heat insulating layer, and the connection with the insulating substrate 1 is made through the connection terminal layer 2.
, 2, and there is little heat dissipation due to thermal conduction, so there is also little heat dissipation from the fuse layer 3, and the temperature rises rapidly with the passage of time. Note that the insulating substrate 1 is the fuse M3.
Since it hardly acts as a heat dissipation plate, it is not affected by differences in heat dissipation due to the shape and size of the insulating substrate 1.
<There is no variation in temperature rise.

そして、ヒユーズ層3の温度が金属層6の副:点近くな
ると溶断して、表面張力によりボール状となって接続端
子層2,2側に凝集する。
Then, when the temperature of the fuse layer 3 approaches the sub-point of the metal layer 6, it melts and becomes ball-shaped due to surface tension and aggregates on the connection terminal layers 2, 2 side.

従って、くびれを設けて局部的に電流密度を高める場合
(絶縁基板が放熱板として作用する)よりも溶断のため
の熱エネルギーがヒユーズ層3に集中しやすい。また熱
伝導による放熱が少なく、絶縁基板1がアルミナ等から
なるため、不燃構造となる。
Therefore, thermal energy for blowing is more likely to be concentrated in the fuse layer 3 than when a constriction is provided to locally increase the current density (the insulating substrate acts as a heat sink). Further, since there is little heat dissipation due to thermal conduction and the insulating substrate 1 is made of alumina or the like, it has a non-combustible structure.

なお、本発明においてもヒユーズ層3にくびれを設けて
局部的に電流密度を高めるようにすれば、更に溶断特性
を向」ニさせることが可能である。
In the present invention, the fusing characteristics can be further improved by providing a constriction in the fuse layer 3 to locally increase the current density.

以上説明したように本発明の厚膜ヒユーズによれば、ヒ
ユーズ層上絶縁基板との間に隙間を設けて、該隙間を空
気断熱層としているので、溶断特性が優れ、放熱のL9
によるバラツキが少なく、局部的な電流密度集中箇所を
有する構造としな(ても溶断条件を制御しやすい。また
、熱伝導による放熱が少なく、絶縁基板自体の温度上昇
を小さくおさえることができ、回路の一部として回路と
同一基板上に形成することが可能となる。さらに、溶断
時にヒユーズ層が接続端子層側にボール状に凝集される
ため、溶断を目視により容易に確認できる。
As explained above, according to the thick film fuse of the present invention, a gap is provided between the fuse layer and the insulating substrate, and the gap is used as an air insulating layer, so it has excellent fusing characteristics and L9 heat dissipation.
It is easy to control the fusing conditions even if the structure has localized current density concentration.In addition, there is little heat dissipation due to thermal conduction, and the temperature rise of the insulating substrate itself can be suppressed, and the circuit The fuse layer can be formed on the same substrate as the circuit as part of the circuit.Furthermore, since the fuse layer aggregates into a ball shape on the connection terminal layer side when blown, the blown can be easily confirmed visually.

また、本発明の厚膜ヒユーズの製造方法によれば、レジ
ンの耐溶剤性の差を利用して樹脂ペースト層を熔解除去
しヒユーズ層と絶縁基板との間に空気断熱層を形成する
ので、製造が容易で、コスト高とならない。また、樹脂
ペースト層の厚さを変えることにより空気断熱層を容易
に変更できる。
Further, according to the method for manufacturing a thick film fuse of the present invention, the resin paste layer is melted and removed by utilizing the difference in solvent resistance of the resin, and an air insulation layer is formed between the fuse layer and the insulating substrate. It is easy to manufacture and does not require high costs. Furthermore, the air insulation layer can be easily changed by changing the thickness of the resin paste layer.

さらに、接続端子層は導電ペースト層と金属層との二重
構造となり、5金属層を直接絶縁基板上に形成する場合
に比して接着力が得られ、信頼性が向上する。
Furthermore, the connection terminal layer has a double structure of a conductive paste layer and a metal layer, and as compared to the case where five metal layers are directly formed on an insulating substrate, adhesive strength is obtained and reliability is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

図面ば本発明の一実施例を示し、第1図は斜視図、第2
図a、b乃至第6図a、bば製造工程を説明する側面図
及び平面図からなる工程説明図である。 ト・・・・絶縁基板、2・・・・・・接続端4層、3・
・・・・化ユーズ層、4・・・・・・隙間(空気断熱層
)、5・・・・・・導電ペース1一層、7・・・・・・
樹脂ペースト層。 特許出願人 矢 崎 総 業 株式会社第1図 第2図 (a) (b) 第3図 第4図  8 手続ネif↑正書(自発) 昭和58年10月13日 特許庁長官 若 1杉 1口 夫 殿 ■、事件の表示 昭和58年特許願第1444.85号 34 補正をする者 事件との関係 特許出願人 住所 東京都港区三口」1丁目4番28号名称 (68
9)力11荀総業株式会社4、代理人 5、 補正命令の日付 昭和 年 月 日6、 補正に
より増加する発明の数
The drawings show one embodiment of the present invention, with FIG. 1 being a perspective view and FIG.
Figures a, b to 6 are process explanatory diagrams consisting of a side view and a plan view illustrating the manufacturing process. G... Insulating board, 2... Connection end 4 layers, 3...
...Used layer, 4...Gap (air insulation layer), 5...Conductive paste 1 layer, 7...
resin paste layer. Patent Applicant Yazaki Sogyo Co., Ltd. Figure 1 Figure 2 (a) (b) Figure 3 Figure 4 8 Procedure Neif↑Author (spontaneous) October 13, 1980 Commissioner of the Patent Office Wakaichisugi 1 Kuchi Husband■, Indication of the case 1982 Patent Application No. 1444.85 34 Relationship with the person making the amendment Patent applicant Address 1-4-28, Mikuchi, Minato-ku, Tokyo Name (68
9) Power 11 Xun Sogyo Co., Ltd. 4, Agent 5, Date of amendment order: Showa, Month, Day 6, Number of inventions increased by amendment

Claims (2)

【特許請求の範囲】[Claims] (1) 絶縁基板上に設けた少なくとも一対をなす接続
端子層と、該接続端子層間に前記絶縁基板との間に隙間
が生ずるようにして設けたヒユーズ層とを具備し、かつ
前記隙間を空気断熱層としてなることを特徴とするE(
ltAヒユーズ。
(1) At least one pair of connecting terminal layers provided on an insulating substrate, and a fuse layer provided so as to create a gap between the connecting terminal layers and the insulating substrate, and the gap is filled with air. E(
ltA Hughes.
(2)絶縁基板上の接続端子層となる位置に導電ペース
ト層を形成し、また該接続端子層間のヒユーズ層となる
位置に後工程の溶剤で除去可能な樹脂ペースト層を形成
し、次いで前記導電ペースト肩上と前記樹脂ペースト層
の側面を除く表面所定位置にハンダ合金等の金属層を積
層して、接続端子層とヒユーズ層を形成し、然る後前記
樹脂ペースト層を溶剤により溶解除去して、前記ヒユー
ズ層と前記絶縁基板との間に空気断熱層を形成すること
を特徴とする厚膜ヒユーズの製造方法。
(2) Form a conductive paste layer on the insulating substrate at a position that will become a connecting terminal layer, and also form a resin paste layer that can be removed with a solvent in a subsequent process at a position that will become a fuse layer between the connecting terminal layers, and then A metal layer such as a solder alloy is laminated at a predetermined position on the surface excluding the conductive paste shoulders and the side surfaces of the resin paste layer to form a connection terminal layer and a fuse layer, and then the resin paste layer is dissolved and removed using a solvent. A method for manufacturing a thick film fuse, comprising: forming an air heat insulating layer between the fuse layer and the insulating substrate.
JP58144485A 1983-08-09 1983-08-09 Thick film fuse and its manufacturing method Expired JPS6046507B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58144485A JPS6046507B2 (en) 1983-08-09 1983-08-09 Thick film fuse and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58144485A JPS6046507B2 (en) 1983-08-09 1983-08-09 Thick film fuse and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS6037632A true JPS6037632A (en) 1985-02-27
JPS6046507B2 JPS6046507B2 (en) 1985-10-16

Family

ID=15363412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58144485A Expired JPS6046507B2 (en) 1983-08-09 1983-08-09 Thick film fuse and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6046507B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144821A (en) * 1988-11-25 1990-06-04 Fujikura Ltd Fuse formation
JP2000011831A (en) * 1998-06-19 2000-01-14 Nec Kansai Ltd Thermal fuse with resistance
JP2008052989A (en) * 2006-08-23 2008-03-06 Koa Corp Chip type circuit protection element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62137407U (en) * 1986-02-21 1987-08-29

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59159847U (en) * 1983-04-13 1984-10-26 株式会社フジクラ Planar heating element with temperature fuse
JPS59187048U (en) * 1983-05-31 1984-12-12 日立コンデンサ株式会社 temperature fuse

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59159847U (en) * 1983-04-13 1984-10-26 株式会社フジクラ Planar heating element with temperature fuse
JPS59187048U (en) * 1983-05-31 1984-12-12 日立コンデンサ株式会社 temperature fuse

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144821A (en) * 1988-11-25 1990-06-04 Fujikura Ltd Fuse formation
JP2000011831A (en) * 1998-06-19 2000-01-14 Nec Kansai Ltd Thermal fuse with resistance
JP2008052989A (en) * 2006-08-23 2008-03-06 Koa Corp Chip type circuit protection element
JP4693001B2 (en) * 2006-08-23 2011-06-01 コーア株式会社 Chip-type circuit protection element

Also Published As

Publication number Publication date
JPS6046507B2 (en) 1985-10-16

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