JPS603528A - Pyroelectric type element - Google Patents
Pyroelectric type elementInfo
- Publication number
- JPS603528A JPS603528A JP58110554A JP11055483A JPS603528A JP S603528 A JPS603528 A JP S603528A JP 58110554 A JP58110554 A JP 58110554A JP 11055483 A JP11055483 A JP 11055483A JP S603528 A JPS603528 A JP S603528A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- film
- infrared
- element body
- conductor wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002265 prevention Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 24
- 239000004020 conductor Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 230000005669 field effect Effects 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、焦電形赤外線センサーに使用される焦電形素
子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pyroelectric element used in a pyroelectric infrared sensor.
従来、電子調理器の温度検知機として例えば第１図に示
す構造の焦電形赤外線センサーが使用されている。図中
１は、円板形のステムである。ステム１の中央部には、
円板形の基板２が同心円状に嵌合されている。基板２の
中央部には、方形の支持枠３が取付けられている。支持
枠３上には、タンタル酸リチウムの単結晶薄片からなる
焦電形素子４が装着されている。焦電形素子４は、主面
の中央部に赤外線を吸収する金属膜からなる円形の受光
部５を有している。Conventionally, a pyroelectric infrared sensor having a structure shown in FIG. 1, for example, has been used as a temperature detector for an electronic cooking device. In the figure, 1 is a disk-shaped stem. In the center of stem 1,
A disk-shaped substrate 2 is fitted concentrically. A rectangular support frame 3 is attached to the center of the substrate 2. A pyroelectric element 4 made of a single crystal thin piece of lithium tantalate is mounted on the support frame 3. The pyroelectric element 4 has a circular light-receiving section 5 made of a metal film that absorbs infrared rays at the center of its principal surface.
主面には受光部５に接続した導体配線６が形成されてい
る。主面に対向した゛焦電素子４の裏面側には、金属膜
からなる反射膜（図示せず）が形成されている。焦電形
素子４を囲む基板２の周辺領域には、出力抵抗体８、高
抵抗素子９、電界効果型トランジスタ１０が形成されて
いる。A conductor wiring 6 connected to the light receiving section 5 is formed on the main surface. A reflective film (not shown) made of a metal film is formed on the back surface side of the pyroelectric element 4 facing the main surface. In the peripheral region of the substrate 2 surrounding the pyroelectric element 4, an output resistor 8, a high resistance element 9, and a field effect transistor 10 are formed.
また、電界効果型トランジスタ１０の両側部には、ステ
ム１の裏面側から外部に導出するようにしてリード線１
１が取付けられている。電界効果型トランジスタ１０は
、？ンディング線１２を介して導体配線６及びリード線
１１に接続されている。リード線１１と高抵抗素子９間
、導体配線６と出力抵抗体８間には、デンディング線１
２が架設されている。ステム１上には、焦電形素子４を
覆うようにしてキャップ１３が設けられている。受光部
５に対向するキャップ１３の中央部の領域には、シリコ
ンやダルマニウム等の薄膜からなる赤外線透過膜１４が
形成されている。これらは、電気的には第４図のように
結線されている。In addition, lead wires 1 are provided on both sides of the field effect transistor 10 so as to be led out from the back side of the stem 1.
1 is installed. What is the field effect transistor 10? It is connected to the conductor wiring 6 and the lead wire 11 via a landing wire 12 . Dending wire 1 is connected between lead wire 11 and high resistance element 9 and between conductor wiring 6 and output resistor 8.
2 has been constructed. A cap 13 is provided on the stem 1 so as to cover the pyroelectric element 4. In the central region of the cap 13 facing the light receiving section 5, an infrared transmitting film 14 made of a thin film of silicon, damanium, or the like is formed. These are electrically connected as shown in FIG.
このように構成された焦電形赤外線センサー１臣は、感
度が高く、受光部５を高抵抗を通して接地しているが、
焦電素子４の上面は接地していない。このため、焦電素
子４全体の温度が上昇した場合、その表面に自発分極電
荷が発生する。この電荷量自体は小さい値であるが、焦
電素子４の電気容量が小さいため、自発分極電荷による
電圧は高電圧（６００ｖ／℃）になる、しかし受光部５
は金属膜よシ成り導体配線６、高抵抗素子９を通して接
地されているので受光部電位は、略接地電位となり主面
の他の部分は高電位になる。この高電圧は、素子の初期
温度と到達温度との温度差に略比例し、昇温時間にも影
響がある（発生した高電圧が一部主面の固有高抵抗を通
して電流が流れるため昇温時間が長いと発生した電圧は
若干低下する）このようにして発生した電位差により主
面受光部以外の部分よシ受光部５への放電、焦電形素子
裏面、支持枠３〔接地電位〕への放電、その他接地電位
又はそれに近い、素子に近接した配線、又は部品等に対
する火花又はストリーマ放電が発生する。この放電によ
る電流が増幅されてスパイ （クノイズとなシ、温度検
知精度を低下する問題があった。The pyroelectric infrared sensor configured in this way has high sensitivity, and the light receiving section 5 is grounded through a high resistance.
The top surface of the pyroelectric element 4 is not grounded. Therefore, when the temperature of the entire pyroelectric element 4 rises, spontaneous polarization charges are generated on its surface. This amount of charge itself is small, but since the capacitance of the pyroelectric element 4 is small, the voltage due to spontaneous polarization becomes a high voltage (600 V/°C).
is grounded through the metal film conductor wiring 6 and the high-resistance element 9, so the potential of the light-receiving portion is approximately the ground potential, and the other portions of the main surface are at a high potential. This high voltage is approximately proportional to the temperature difference between the initial temperature and the final temperature of the element, and also affects the temperature rise time (the generated high voltage causes current to flow through some of the main surfaces' inherent high resistance, causing the temperature to rise. (If the time is long, the generated voltage will drop slightly.) The potential difference generated in this way causes discharge from parts other than the main surface light receiving part to the light receiving part 5, to the back surface of the pyroelectric element, and to the support frame 3 [ground potential]. sparks or streamer discharges to wiring or components near the device that are at or near ground potential. The current caused by this discharge was amplified, creating spike noise and reducing temperature detection accuracy.
本発明は、かかる点に鑑みてなされたものであシ、放電
によるス・やイクノイズの発生を阻止して、温度検知精
度の向上を達成した焦電形赤外線センサーを容易に得る
ことができる焦電素子を提供するものである。The present invention has been made in view of the above, and provides a pyroelectric infrared sensor that can easily obtain a pyroelectric infrared sensor that prevents the generation of smoke and noise due to discharge and improves temperature detection accuracy. It provides electronic devices.
以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.
第２図は、本発明の一実施例の焦電形素子を組込んだ焦
電形赤外線センサーの略概構成を示す説明図である。図
中４０は、円板形のステムである。ステム４０の中央部
には、円板形の基板４１が同心状に嵌合されている。基
板４１の中央部には、焦電素子４全
焦電形素子、９０の裏側は、素子支持枠２０で形成され
ている。素子支持枠２０は、金属や半導体等の導電性の
良好ガ材質で形成されている。また、素子支持枠２０は
、後述する素子本体２１の熱膨張係数にほぼ等しい熱膨
張係数を有している。素子支持体２０上には、第３図に
示す如く、タンタル酸リチウム等の単結晶薄片からなる
素子本体２１が装着さ５−
れている。素子本体２１の肉厚は、通常０．１〜０．０
５ｗｎの範囲のものが用いられている。素子本体２１の
裏面には、金属薄膜からなる反射膜２２が形成されてお
シ、支持枠２０を通して接地電位に保たれる。素子本体
２１の主面の中央部には、赤外線吸収金属膜からなる受
光部２３が形成されている。また、主面には、受光部２
３に接続する導体配線２４が形成されている。導体配線
２４、受光部２３を含む素子本体２１の表面は、赤外線
透過性の放電防止膜２５で形成されている。放電防止膜
２５は、化学的に安定であり、かつ高電圧に耐え得るシ
リコン等の樹脂や、フェス、ゴム等の高絶縁部材、或は
、１０８〜１０Ωんの高抵抗部材等で形成されている。FIG. 2 is an explanatory diagram showing a schematic configuration of a pyroelectric infrared sensor incorporating a pyroelectric element according to an embodiment of the present invention. In the figure, 40 is a disk-shaped stem. A disk-shaped substrate 41 is fitted concentrically into the center of the stem 40 . A pyroelectric element 4 is formed entirely in the center of the substrate 41, and an element support frame 20 is formed on the back side of the pyroelectric element 90. The element support frame 20 is made of a highly conductive material such as metal or semiconductor. Further, the element support frame 20 has a coefficient of thermal expansion that is approximately equal to the coefficient of thermal expansion of the element body 21, which will be described later. As shown in FIG. 3, an element body 21 made of a single crystal thin piece of lithium tantalate or the like is mounted on the element support 20. The thickness of the element body 21 is usually 0.1 to 0.0
Those in the range of 5wn are used. A reflective film 22 made of a thin metal film is formed on the back surface of the element body 21, and is maintained at a ground potential through the support frame 20. A light receiving section 23 made of an infrared absorbing metal film is formed in the center of the main surface of the element body 21. In addition, on the main surface, a light receiving section 2
A conductor wiring 24 connected to 3 is formed. The surface of the element body 21 including the conductor wiring 24 and the light receiving section 23 is formed with an infrared-transparent discharge prevention film 25. The discharge prevention film 25 is made of a resin such as silicone that is chemically stable and can withstand high voltage, a highly insulating material such as a face or rubber, or a high resistance material of 10 8 to 10 Ω. There is.
つまり、放電防止膜２５は、高絶縁部材のように素子本
体２１の表面に発生した電荷の移動を阻止する機能を備
えたものか、或は、高抵抗部材のように素子本体２１の
表面に発生した電荷を逐次放出して表面電位を下げる機
能を有するものであれば良い。In other words, the discharge prevention film 25 is either a highly insulating material that has the function of blocking the movement of charges generated on the surface of the element body 21, or a high resistance material that is formed on the surface of the element body 21. Any material may be used as long as it has the function of lowering the surface potential by sequentially releasing the generated charges.
６一
なお、放電防止膜２５は、赤外線不透過性のものを用い
て、受光部２３を除いた素子本体２１０表面領域を覆う
ようにしても良い。Note that the discharge prevention film 25 may be made of a material that does not transmit infrared rays, and may cover the surface area of the element body 210 except for the light receiving portion 23.
焦電形素子３０を囲む基板４１の周辺領域には、出力抵
抗体４２、電界効果型トランジスタ４３、温度計測素子
４４が形成されている。温度計測素子４４の両側部には
、ステム４０の裏面側から外部に導出するようにしてリ
ード線４５が取付けられている。温度計測素子４４は、
？ンディング線４８を介して導体配線２４及びリード線
４５に接続されている。リード線４５と高抵抗素子４３
間、導体配線２４と出力抵抗体４２間には、？ンディン
グ線４８が架設されている。ステム４０上には、焦電形
素子３０を覆うようにしてキャラｆ４６が設けられてい
る。In the peripheral region of the substrate 41 surrounding the pyroelectric element 30, an output resistor 42, a field effect transistor 43, and a temperature measuring element 44 are formed. Lead wires 45 are attached to both sides of the temperature measuring element 44 so as to lead out from the back side of the stem 40 . The temperature measurement element 44 is
? It is connected to the conductor wiring 24 and a lead wire 45 via a landing wire 48 . Lead wire 45 and high resistance element 43
Between the conductor wiring 24 and the output resistor 42? A landing line 48 is installed. A character f46 is provided on the stem 40 so as to cover the pyroelectric element 30.
受光部２３に対向するキャップ４６の中央部の領域には
、シリコンやゲルマニウム等の薄膜からなる赤外線透過
膜４７が形成されている。An infrared transmitting film 47 made of a thin film of silicon, germanium, or the like is formed in the central region of the cap 46 facing the light receiving section 23 .
どのように構成された焦電形赤外線センサー旦によれば
、赤外線透過膜４７を透過し、受呪部２３から素子本体
２１内に入射した赤外線によ多素子内部の温度が上昇し
、その表面に自発分極電荷が発生しても、その電荷は放
電防止膜２５によって移動を阻止されるか、或は、逐次
放出されるので、焦電形素子二の周辺の低電位電極、回
路部間で放電が起きるのを防止できる。その結果、スパ
イクノイズの発生を阻止して焦電形赤外線センサー５０
による温度検知精度を向上させることができる。According to how the pyroelectric infrared sensor is configured, the infrared rays that pass through the infrared transmitting film 47 and enter the element main body 21 from the receiving part 23 increase the temperature inside the multi-element, and the surface of the infrared rays increases. Even if a spontaneous polarization charge is generated, the charge is prevented from moving by the discharge prevention film 25 or is sequentially released, so that the charge is This can prevent discharge from occurring. As a result, the generation of spike noise is prevented and the pyroelectric infrared sensor 50
temperature detection accuracy can be improved.
以上説明した如く、本発明に係る焦電形素子によれば、
放電によるスパイクノイズの発生を阻止して、焦電形赤
外線センサーの温度検知精度を向上させることができる
ものである。As explained above, according to the pyroelectric element according to the present invention,
This prevents the generation of spike noise due to discharge and improves the temperature detection accuracy of the pyroelectric infrared sensor.
第１図は、従来の焦電形素子を組込んだ焦電形赤外線セ
ンサーの構造を示す説明図、第２図は、本発明の一実施
例の焦電形素子を組込んだ焦電形赤外線センサーの構造
を示す説明図、第 １半
２０・・・素子支持枠、２１・・・素子本体、２２・・
・反射膜、２３・・・受光部、２４・・・導体配線、２
５・・・放電防止膜、３０・・・焦電形素子、４０・・
・ステム、４１・・・ヘッダー、４２・・・出力抵抗体
、４３・・・高抵抗素子、４４・・・電界効果型トラン
ジスタ、４５・・・リード線、４６・・・キャップ、４
８・・・ポンディング線、４７・・・赤外線透過膜、５
０−・・赤外線センサー。
出願人代理人 弁理士 鈴 江 武 彦９−
第 １ 図
匹
３０ ４０
３４８２４
４FIG. 1 is an explanatory diagram showing the structure of a pyroelectric infrared sensor incorporating a conventional pyroelectric element, and FIG. 2 is an explanatory diagram showing the structure of a pyroelectric infrared sensor incorporating a pyroelectric element according to an embodiment of the present invention. Explanatory diagram showing the structure of an infrared sensor, first half 20... element support frame, 21... element body, 22...
・Reflection film, 23... Light receiving part, 24... Conductor wiring, 2
5... Discharge prevention film, 30... Pyroelectric element, 40...
- Stem, 41... Header, 42... Output resistor, 43... High resistance element, 44... Field effect transistor, 45... Lead wire, 46... Cap, 4
8...Ponding wire, 47...Infrared transmission film, 5
0--Infrared sensor. Applicant's agent Patent attorney Takehiko Suzue 9- Figure 1 30 40 34824 4
Claims (1)
る焦電素子を受光部とする素子本体と、該素子本体の前
記主面に対向する裏面に形成された反射膜と、前記素子
本体の表面を覆う赤外線透過性の放電防止膜と、前記受
光部に接続して設けられた導体配線とを具備することを
特徴とする焦電形素子 ２、焦電素子が焦電効果を利用するタンタル３、放電防
止膜が樹脂、フェス、ゴムから選ばれた高絶縁部材であ
る特許請求の範囲第１項、毎 または第２項記載の焦電素子。 ４、放電防止膜が、１０〜１０ｒＶｃ１ｎの抵抗を有す
る高抵抗部材で形成されている特許請求の範囲第１項ま
たは第２項記載の焦電形素子。 ５、受光部を除いた主面を放電防止膜により被覆した特
許請求の範囲第３項または第４項記載の焦電形素子[Claims] 1. An element body whose light receiving portion is a pyroelectric element having an infrared absorbing metal film formed on a pyroelectric material, and a reflection formed on a back surface opposite to the main surface of the element body. A pyroelectric element 2, characterized in that it comprises a film, an infrared-transparent discharge prevention film covering the surface of the element main body, and a conductive wiring connected to the light receiving part. The pyroelectric element according to claim 1, wherein the tantalum 3 that utilizes the pyroelectric effect and the discharge prevention film are made of a highly insulating material selected from resin, plastic, and rubber. 4. The pyroelectric element according to claim 1 or 2, wherein the discharge prevention film is formed of a high-resistance member having a resistance of 10 to 10 rVc1n. 5. The pyroelectric element according to claim 3 or 4, wherein the main surface excluding the light-receiving part is covered with an anti-discharge film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58110554A JPS603528A (en) | 1983-06-20 | 1983-06-20 | Pyroelectric type element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58110554A JPS603528A (en) | 1983-06-20 | 1983-06-20 | Pyroelectric type element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS603528A true JPS603528A (en) | 1985-01-09 |
Family
ID=14538768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58110554A Pending JPS603528A (en) | 1983-06-20 | 1983-06-20 | Pyroelectric type element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603528A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6239109A (en) * | 1985-08-13 | 1987-02-20 | Kobe Steel Ltd | Guide flap device of flying shear and its controlling method |
| US4704534A (en) * | 1985-03-29 | 1987-11-03 | U.S. Philips Corporation | Thermal radiation detector |
-
1983
- 1983-06-20 JP JP58110554A patent/JPS603528A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4704534A (en) * | 1985-03-29 | 1987-11-03 | U.S. Philips Corporation | Thermal radiation detector |
| JPS6239109A (en) * | 1985-08-13 | 1987-02-20 | Kobe Steel Ltd | Guide flap device of flying shear and its controlling method |
| JPH0314569B2 (en) * | 1985-08-13 | 1991-02-27 | Kobe Steel Ltd |
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