JPH05296830A - Pyroelectric element - Google Patents

Pyroelectric element

Info

Publication number
JPH05296830A
JPH05296830A JP4141925A JP14192592A JPH05296830A JP H05296830 A JPH05296830 A JP H05296830A JP 4141925 A JP4141925 A JP 4141925A JP 14192592 A JP14192592 A JP 14192592A JP H05296830 A JPH05296830 A JP H05296830A
Authority
JP
Japan
Prior art keywords
pyroelectric
gate
resistance value
resistance
pyroelectric body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4141925A
Other languages
Japanese (ja)
Other versions
JP2753920B2 (en
Inventor
Masao Inoue
雅央 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nohmi Bosai Ltd
Original Assignee
Nohmi Bosai Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nohmi Bosai Ltd filed Critical Nohmi Bosai Ltd
Priority to US08/018,530 priority Critical patent/US5352895A/en
Priority to DE69312982T priority patent/DE69312982T2/en
Priority to EP93301219A priority patent/EP0557109B1/en
Publication of JPH05296830A publication Critical patent/JPH05296830A/en
Application granted granted Critical
Publication of JP2753920B2 publication Critical patent/JP2753920B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Fire-Detection Mechanisms (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE:To provide an element which has a frequency characteristic suitable for fire detection by a method wherein the resistance value of a gate resistance is lowered. CONSTITUTION:An electric circuit is constituted of a pyroelectric body 1, a field-effect transistor(FET) 2 and the like. A gate electrode for the FET 2 is connected to one terminal of the pyroelectric body 1; a gate resistance 3 is connected in parallel across both ends of the pyroelectric body 1; the resistance value of the gate resistance 3 is set at 5 to 50GOMEGA When the resistance value of the gate resistance 3 is lowered, it is possible to obtain an element which is suitable for the frequency characteristic of infrared rays due to a flame. When the resistance value of the gate resistance is suppressed to 50OMEGAG or lower, a noise component due to a temperature change an be reduced, and a signalless state which is generated in a temperature cycle test or the like does not appear.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、火災検知用の炎感知器
や防犯用の侵入検知器に使用される赤外線を検出するた
めの焦電素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric element for detecting infrared rays used in flame detectors for fire detection and intrusion detectors for crime prevention.

【0002】[0002]

【従来の技術】焦電素子は、焦電体を使用した赤外線セ
ンサであり、火災発生時に炎の赤外線を検知する炎感知
器や、防犯設備に使用される人体の赤外線を検出する侵
入検知器など検出素子に利用される。
2. Description of the Related Art A pyroelectric element is an infrared sensor using a pyroelectric body, and a flame detector for detecting infrared rays of a flame when a fire occurs, or an intrusion detector for detecting infrared rays of a human body used for crime prevention equipment. It is used as a detection element.

【0003】従来、焦電素子は、図2に示すようにフィ
ルタ9を有する金属製のキャン10とステム11とによ
り筐体が構成されている。ステム11を貫通する3本の
ドレイン端子、ソース端子、アース端子を構成するピン
4、5、6の上端部にプリント基板12が載置され、電
気回路部が構成されている。
Conventionally, as shown in FIG. 2, a pyroelectric element has a casing made up of a metal can 10 having a filter 9 and a stem 11. The printed circuit board 12 is placed on the upper ends of the three pins 4, 5, 6 that form the drain terminal, the source terminal, and the ground terminal that penetrate the stem 11, and the electrical circuit section is configured.

【0004】焦電素子の電気回路部は、通常プリアンプ
用の電界効果トランジスタ(以下、FETと呼ぶ)のソ
ース電極が焦電体の一方の電極に接続される。そして、
感度の周波数特性を制御するために焦電体と並列にゲー
ト抵抗が設けられ、その電気時定数により低域のカット
オフ周波数を決定している。このゲート抵抗には、従来
100〜200ギガオームの高抵抗のものが使用され、
特に人体用のものについては、素子自体の周波数特性を
広くしている。
In the electric circuit section of the pyroelectric element, a source electrode of a field effect transistor (hereinafter referred to as FET) for a preamplifier is usually connected to one electrode of a pyroelectric body. And
A gate resistor is provided in parallel with the pyroelectric body to control the frequency characteristic of sensitivity, and the cutoff frequency in the low frequency band is determined by the electrical time constant. For this gate resistance, one with a high resistance of 100 to 200 giga ohms is conventionally used,
Especially for the human body, the frequency characteristics of the element itself are widened.

【0005】[0005]

【発明が解決しようとする課題】ゲート抵抗の抵抗値を
100ギガオームとすると、焦電素子感度の応答周波数
は、約0.5Hzをピークにした山形の特性が得られる。
火災検知用の場合に必要な炎による周波数特性は約8Hz
にピークがあることが知られており、上記の約0.5Hz
にピークを有する特性では、炎を検知する場合、検知し
たい周波数帯域外に出力感度がピークとなることになっ
てしまう。ただ、侵入検知器に使用する場合の人体から
の赤外線の周波数特性は、約0.1Hzにピークを有して
いる。
When the resistance value of the gate resistance is 100 giga ohms, the response frequency of the sensitivity of the pyroelectric element has a mountain-shaped characteristic with a peak at about 0.5 Hz.
The frequency characteristic due to the flame required for fire detection is about 8Hz
It is known that there is a peak at about 0.5Hz.
With a characteristic having a peak at, when detecting a flame, the output sensitivity has a peak outside the frequency band to be detected. However, the frequency characteristic of infrared rays from the human body when used for an intrusion detector has a peak at about 0.1 Hz.

【0006】また、上記焦電素子の周囲温度を変化させ
ると、出力が出なくなる場合がある。即ち、ゲート抵抗
の抵抗値が大きいと、焦電体に印加される電圧は小さ
く、例えば周囲温度を毎分1.4℃の割合で降下させる
と、無信号状態となる。周囲温度の変化は、空調の関係
など通常の設置場所に種々の要因があり、無信号状態と
なることは、非常に問題がある。
Further, if the ambient temperature of the pyroelectric element is changed, the output may not be output. That is, when the resistance value of the gate resistance is large, the voltage applied to the pyroelectric body is small. For example, when the ambient temperature is decreased at a rate of 1.4 ° C./min, no signal occurs. A change in ambient temperature has various factors in a normal installation place such as a relation of air conditioning, and a no-signal state is very problematic.

【0007】[0007]

【課題を解決するための手段】本発明は、火災検知用に
適した周波数特性を有する焦電素子を得ることを目的と
して、ゲート抵抗の抵抗値を低くすれば周波数の応答特
性が、高周波側の感度を落とさずに低周波側の感度を落
とすように、ピークが高周波側に移行することに着目
し、筐体内に焦電体とFET等による電気回路が構成さ
れ、FETのゲート電極が焦電体の一方の端子に接続さ
れ、焦電体の両端子間にゲート抵抗が並列に接続され、
ゲート抵抗の抵抗値が5ギガオームから50ギガオーム
であることを特徴とするものである。
SUMMARY OF THE INVENTION The present invention aims at obtaining a pyroelectric element having a frequency characteristic suitable for fire detection, and if the resistance value of the gate resistance is lowered, the frequency response characteristic becomes high frequency side. Focusing on that the peak shifts to the high frequency side so as to reduce the sensitivity on the low frequency side without lowering the sensitivity, the electric circuit composed of the pyroelectric body and the FET etc. is configured in the housing, and the gate electrode of the FET is It is connected to one terminal of the electric body, the gate resistance is connected in parallel between both terminals of the pyroelectric body,
It is characterized in that the resistance value of the gate resistance is 5 giga ohms to 50 giga ohms.

【0008】また、周囲温度が変動しても、相当の出力
を得ることを目的として、筐体内に焦電体とFET等に
よる電気回路が構成され、FETのゲート電極が焦電体
の一方の端子に接続され、焦電体の両端子間にゲート抵
抗が並列に接続され、ゲート抵抗の抵抗値が30ギガオ
ーム以下にすることを特徴とするものである。
Further, even if the ambient temperature fluctuates, an electric circuit including a pyroelectric body and an FET is formed in the housing for the purpose of obtaining a considerable output, and the gate electrode of the FET is one of the pyroelectric bodies. It is characterized in that it is connected to a terminal, a gate resistance is connected in parallel between both terminals of the pyroelectric body, and the resistance value of the gate resistance is 30 giga ohms or less.

【0009】[0009]

【作用】ゲート抵抗の抵抗値を低くすることにより、炎
による赤外線の周波数特性に適応した焦電素子が得られ
る。また、ゲート抵抗の抵抗値を50ギガオーム以下に
抑えると、温度変化によるノイズ成分を小さくすること
ができ、温度サイクル試験時などに発生する無信号状態
(素子の温度変化が急勾配時に信号が無くなる状態、ピ
ンチオフと呼ぶ)が現れなくなる。
By lowering the resistance value of the gate resistance, a pyroelectric element adapted to the frequency characteristics of infrared rays due to the flame can be obtained. Further, if the resistance value of the gate resistance is suppressed to 50 giga ohms or less, the noise component due to the temperature change can be reduced, and a signalless state (a signal disappears when the temperature change of the element is steep) occurs during a temperature cycle test or the like. State, called pinch-off) disappears.

【0010】[0010]

【実施例】以下、本発明の一実施例について、図1また
は図2を用い説明する。図1は本発明の焦電素子の回路
図の一実施例であり、図2はその概略断面図の一実施例
であるが、図2に関しては上記従来例と同様なので説明
は省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. 1 or 2. FIG. 1 is an embodiment of a circuit diagram of a pyroelectric element of the present invention, and FIG. 2 is an embodiment of a schematic sectional view thereof. However, since FIG. 2 is similar to the above-mentioned conventional example, description thereof will be omitted.

【0011】図1において、1はPVDFやPZT等の
材質による焦電体、2はFETで、そのゲート電極は焦
電体1の一方の電極と接続されている。3は焦電体1に
並列接続されるFET2のゲート抵抗、4はFET2の
ドレイン電極に接続されたドレイン端子、5はFET2
のソース電極に接続されたソース端子、6は焦電体1の
他端の電極と接続されたアース端子である。7はFET
2のドレイン電極とアース間に設けられ、供給電圧を安
定させるためのコンデンサ、8はFET2のソース電極
とアース間に設けられ、高周波側の誘導ノイズをカット
するためのコンデンサであり、コンデンサ7、8は、容
量が10pF程度であり、後述する実験結果には影響を与
えず、また構成上なくてもよい。FET2およびゲート
抵抗3等からなる電気回路部は、筐体内のプリント基板
12に搭載されている。
In FIG. 1, 1 is a pyroelectric body made of a material such as PVDF or PZT, 2 is a FET, and its gate electrode is connected to one electrode of the pyroelectric body 1. 3 is the gate resistance of the FET 2 connected in parallel to the pyroelectric body 1, 4 is the drain terminal connected to the drain electrode of the FET 2, and 5 is the FET 2
Is a source terminal connected to the source electrode, and 6 is a ground terminal connected to the electrode at the other end of the pyroelectric body 1. 7 is a FET
2 is provided between the drain electrode and the ground to stabilize the supply voltage, 8 is provided between the source electrode of the FET 2 and the ground, and is a capacitor for cutting induction noise on the high frequency side. No. 8 has a capacitance of about 10 pF, does not affect the experimental results described later, and may be omitted from the configuration. The electric circuit section including the FET 2 and the gate resistor 3 is mounted on the printed board 12 in the housing.

【0012】このような焦電素子では、焦電体1で受光
される赤外線の変化に応じてFET2のゲート電位が変
化し、この電位変化により、ソース端子5とアース端子
6間に検出電圧が生じる。この検出電圧を、図示しない
電気回路に接続し、増幅回路で増幅した後、判別回路で
基準値と比較して、例えば火災信号を出力する。
In such a pyroelectric element, the gate potential of the FET 2 changes in response to a change in infrared rays received by the pyroelectric body 1, and due to this potential change, a detection voltage is applied between the source terminal 5 and the ground terminal 6. Occurs. The detected voltage is connected to an electric circuit (not shown), amplified by an amplifier circuit, and then compared with a reference value by a discriminating circuit to output, for example, a fire signal.

【0013】図4に、焦電素子の周波数応答特性を調べ
るための装置構成を示した。13は赤外線を照射する光
源、14は一定の周期で回転し任意の周波数を作成でき
る回転チョッパ、15は試験される焦電素子、16は焦
電素子15の出力を電気的に増幅する交流結合増幅器、
17は回転周波数に応じた制限出力のみを取り出すため
のバンドパスフィルタである。
FIG. 4 shows an apparatus configuration for examining the frequency response characteristic of the pyroelectric element. Reference numeral 13 is a light source for irradiating infrared rays, 14 is a rotation chopper capable of rotating at a constant cycle to create an arbitrary frequency, 15 is a pyroelectric element to be tested, and 16 is an AC coupling for electrically amplifying the output of the pyroelectric element 15. amplifier,
Reference numeral 17 is a bandpass filter for extracting only the limited output corresponding to the rotation frequency.

【0014】図4の装置を利用して、焦電素子の周波数
応答特性を調べた結果を図3に示した。図において、横
軸は回転チョッパ14による周波数(Hz)、縦軸は焦電
素子15の出力感度(mV)である。曲線Aは、焦電体1
がPVDFでありゲート抵抗3の抵抗値が100ギガオ
ームの場合であり、曲線Bは、曲線Aの焦電体1がPZ
Tの場合である。ゲート抵抗3の抵抗値が100ギガオ
ームであると、焦電体1の材質に関わらず、同様の特性
を示し、約0.5Hzあたりにピークを有する山形にな
る。この特性では、炎の赤外線や人体からの赤外線の両
方に対応することができる。
FIG. 3 shows the results of examining the frequency response characteristics of the pyroelectric element using the apparatus shown in FIG. In the figure, the horizontal axis represents the frequency (Hz) of the rotary chopper 14, and the vertical axis represents the output sensitivity (mV) of the pyroelectric element 15. Curve A is pyroelectric body 1
Is PVDF and the resistance value of the gate resistor 3 is 100 GΩ, and the curve B shows that the pyroelectric body 1 of the curve A is PZ.
This is the case of T. When the resistance value of the gate resistor 3 is 100 giga ohms, the same characteristics are exhibited regardless of the material of the pyroelectric body 1, and the peak shape is around 0.5 Hz. With this characteristic, it is possible to deal with both infrared rays from the flame and infrared rays from the human body.

【0015】曲線Cは、曲線Aのゲート抵抗3の抵抗値
を10ギガオームにしたものである。曲線Cの場合に
は、炎特有の約8Hzの部分の感度を低下させることな
く、低域側の感度を落としている。カットオフ周波数、
即ち山形のピーク値をfcとすると、fcは次式の関係が成
り立つ。
Curve C is obtained by setting the resistance value of the gate resistor 3 of curve A to 10 gigaohms. In the case of the curve C, the sensitivity of the low frequency side is lowered without lowering the sensitivity of about 8 Hz, which is peculiar to the flame. Cutoff frequency,
That is, assuming that the peak value of the mountain shape is fc, fc has the following relationship.

【0016】fc = 1/(2π・c・Rg) ここで、cは焦電体1のコンデンサ容量およびFET2
の入力容量の和、Rgはゲート抵抗3の抵抗値、πは円周
率である。この式に従い、抵抗値Rgを小さくしていく
と、カットオフ周波数fcは大きくなり、低域をカットし
たい場合には、抵抗値Rgを小さくしてやればよい。それ
で、ゲート抵抗3の抵抗値を5ギガオームにすれば、約
8Hzの部分にピークが位置するが、感度自体は僅かに低
下してしまう。従って、これ以上抵抗値を低下させるこ
とは、感度が低下するとともにピークの位置も外れてし
まう。これらのことは、焦電体1の電気的性質の問題で
あり、焦電体1の材質に関わらない。
Fc = 1 / (2π · c · Rg) where c is the capacitance of the pyroelectric body 1 and the FET 2
Of input resistances, Rg is the resistance value of the gate resistor 3, and π is the pi. According to this formula, the cutoff frequency fc increases as the resistance value Rg is decreased, and the resistance value Rg may be decreased to cut the low frequency range. Therefore, if the resistance value of the gate resistance 3 is set to 5 giga ohms, the peak is located at a portion of about 8 Hz, but the sensitivity itself is slightly lowered. Therefore, if the resistance value is further lowered, the sensitivity is lowered and the peak position is also deviated. These are problems with the electrical properties of the pyroelectric body 1 and are not related to the material of the pyroelectric body 1.

【0017】ゲート抵抗3の抵抗値の大きさは、温度サ
イクル試験にも影響がある。温度サイクル試験とは、通
常高温から低温へ所定時間で周期的に変化させ、何回か
行った後に正常な検出信号が出るかどうかを確認する試
験である。実際には、この試験の結果に影響を与えるの
ではなく、温度を変化させるときの信号に不具合があ
る。
The magnitude of the resistance value of the gate resistor 3 also affects the temperature cycle test. The temperature cycle test is a test in which the temperature is normally changed from a high temperature to a low temperature periodically for a predetermined time, and a normal detection signal is output after several times. In fact, it does not affect the results of this test, but rather the signal when changing the temperature.

【0018】図6に温度サイクル試験を行う装置につい
て示した。フレーム21に試験を行う素子の取付部22
が設けられ、フレーム21の素子受光面側には断熱材2
3が詰められた断熱キャップ24が装着されている。取
付部22から突出する素子のピンへ、信号を取り出すた
めの信号線25が半田付けされている。そしてこの装置
全体が図示しない温度調整装置に設置される。
FIG. 6 shows an apparatus for performing a temperature cycle test. The mounting portion 22 of the element to be tested on the frame 21
Is provided on the element light receiving surface side of the frame 21.
An insulating cap 24 filled with 3 is attached. A signal line 25 for taking out a signal is soldered to the pin of the element protruding from the mounting portion 22. The entire device is installed in a temperature adjusting device (not shown).

【0019】図6の装置を利用して焦電素子の温度サイ
クル試験を行ったときのノイズレベルを図5に示した。
Dは抵抗値が5ギガオームの場合であり、Eは10ギガ
オーム、Fは30ギガオーム、Gは50ギガオーム、H
は100ギガオームの場合であり、各抵抗値において2
個の素子について行われている。Iはそのときの周囲温
度であり、摂氏−50℃から+50℃の範囲で、上り約
3.7℃、下り約1.4℃の勾配で変化させている。
FIG. 5 shows the noise level when the temperature cycle test of the pyroelectric element was conducted using the apparatus of FIG.
D is a resistance value of 5 giga ohms, E is 10 giga ohms, F is 30 giga ohms, G is 50 giga ohms, H
Is for 100 giga ohms, and 2 for each resistance value.
This is done for each device. I is the ambient temperature at that time, and is changed in the range of −50 ° C. to + 50 ° C., with a slope of about 3.7 ° C. for rising and about 1.4 ° C. for falling.

【0020】その結果から明らかなように、Gの50ギ
ガオームおよびHの100ギガオームの場合には、完全
にピンチオフが現れている。それに対して、Eの10ギ
ガオームおよびFの30ギガオームの場合には、Dの5
ギガオームの場合程安定していないが、信号が出続けて
いる。
As is clear from the results, in the case of 50 G-ohms of G and 100 G-ohms of H, a complete pinch-off appears. On the other hand, in the case of 10 gigaohms of E and 30 gigaohms of F, 5 of D
It's not as stable as Gigaohm, but the signal keeps coming out.

【0021】これは、本実施例の回路構成では、温度を
高温側から低温側へ比較的急速に低下させるときに、一
時的に焦電体1上に電荷が溜まってしまいFET2が飽
和してしまうので、結果的に信号が無くなってしまう。
このことは、この焦電素子は外気の変動が大きいと、信
号が出ない状態があることを示唆している。
This is because, in the circuit configuration of this embodiment, when the temperature is relatively rapidly decreased from the high temperature side to the low temperature side, electric charges are temporarily accumulated on the pyroelectric body 1 and the FET 2 is saturated. As a result, the signal disappears.
This suggests that this pyroelectric element has a state in which no signal is output when the fluctuation of the outside air is large.

【0022】即ち、ピンチオフが現れる素子で炎感知器
や侵入検知器を作成すると、周囲の温度の変化によっ
て、例えば強風や水分付着による急激な気温の変動の場
合に、正確な火災信号や防犯のための信号を送出できな
いことになる。
That is, if a flame detector or an intrusion detector is made of an element that causes pinch-off, an accurate fire signal or crime prevention can be obtained when the ambient temperature changes, for example, when there is a sudden temperature change due to strong wind or moisture adhesion. Signal cannot be sent.

【0023】従って、ゲート抵抗3の抵抗値を小さくす
ることは、周波数特性の問題だけでなく、ピンチオフや
信号の安定性にも効果がある。
Therefore, reducing the resistance value of the gate resistor 3 is effective not only for frequency characteristics but also for pinch-off and signal stability.

【0024】[0024]

【発明の効果】以上のように、本発明は、筐体内に電気
回路が構成され、電界効果トランジスタのゲート電極が
焦電体の一方の端子に接続され、焦電体の両端子間にゲ
ート抵抗が並列に接続され、ゲート抵抗の抵抗値が5ギ
ガオームから50ギガオームであることを特徴とする火
災検知用焦電素子であって、ゲート抵抗に抵抗値の低い
ものを選択することにより、炎による赤外線の周波数特
性に適応した焦電素子が得られる。
As described above, according to the present invention, the electric circuit is formed in the housing, the gate electrode of the field effect transistor is connected to one terminal of the pyroelectric body, and the gate is provided between both terminals of the pyroelectric body. A fire detection pyroelectric element characterized in that resistors are connected in parallel, and the resistance value of the gate resistance is 5 Giga ohms to 50 Giga ohms. A pyroelectric element adapted to the frequency characteristics of infrared rays can be obtained.

【0025】更に、抵抗値を30ギガオーム以下に抑え
ると、周囲の温度変化があってもピンチオフが現れなく
なり、信号の安定性が向上する。
Further, if the resistance value is suppressed to 30 giga ohms or less, pinch-off does not appear even if the ambient temperature changes, and the signal stability is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の焦電素子の回路構成を簡単に示す電気
回路図。
FIG. 1 is an electric circuit diagram briefly showing a circuit configuration of a pyroelectric element of the present invention.

【図2】本発明の焦電素子の構成を簡単に示す断面図。FIG. 2 is a sectional view simply showing the structure of a pyroelectric element of the present invention.

【図3】焦電素子の周波数特性を応答周波数に対する感
度で示した図。
FIG. 3 is a diagram showing frequency characteristics of a pyroelectric element in terms of sensitivity to response frequency.

【図4】図3の周波数特性を測定するための装置構成
図。
FIG. 4 is an apparatus configuration diagram for measuring the frequency characteristic of FIG.

【図5】焦電素子の温度サイクル試験を行ったときのノ
イズレベルを示した図。
FIG. 5 is a diagram showing a noise level when a temperature cycle test of a pyroelectric element is performed.

【図6】図5の温度サイクル試験を行うための装置構成
図。
6 is an apparatus configuration diagram for performing the temperature cycle test of FIG.

【符号の説明】[Explanation of symbols]

1 焦電体 2 電界効果トランジスタ(FET) 3 ゲート抵抗 1 Pyroelectric body 2 Field effect transistor (FET) 3 Gate resistance

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 37/02 9276−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 37/02 9276-4M

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 炎の赤外線を検出して火災を判別する火
災検知用に用いられる焦電素子において、筐体内に焦電
体と電界効果トランジスタ等による電気回路が構成さ
れ、前記電界効果トランジスタのゲート電極が前記焦電
体の一方の端子に接続され、前記焦電体の両端子間にゲ
ート抵抗が並列に接続され、前記ゲート抵抗の抵抗値が
5ギガオームから50ギガオームであることを特徴とす
る焦電素子。
1. In a pyroelectric element used for fire detection for detecting a fire by detecting infrared rays of a flame, an electric circuit including a pyroelectric body and a field effect transistor is formed in a housing, A gate electrode is connected to one terminal of the pyroelectric body, a gate resistance is connected in parallel between both terminals of the pyroelectric body, and the resistance value of the gate resistance is 5 gigaohms to 50 gigaohms. Pyroelectric element.
【請求項2】 炎や人体からの赤外線を検出して火災検
知や侵入検知に用いられる焦電素子において、筐体内に
焦電体と電界効果トランジスタ等による電気回路が構成
され、前記電界効果トランジスタのゲート電極が前記焦
電体の一方の端子に接続され、前記焦電体の両端子間に
ゲート抵抗が並列に接続され、前記ゲート抵抗の抵抗値
が30ギガオーム以下であることを特徴とする焦電素
子。
2. In a pyroelectric element used for fire detection or intrusion detection by detecting flame or infrared rays from a human body, an electric circuit including a pyroelectric body and a field effect transistor is formed in a housing, and the field effect transistor is formed. Is connected to one terminal of the pyroelectric body, a gate resistance is connected in parallel between both terminals of the pyroelectric body, and the resistance value of the gate resistance is 30 gigaohms or less. Pyroelectric element.
JP4141925A 1992-02-19 1992-05-08 Pyroelectric element Expired - Fee Related JP2753920B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US08/018,530 US5352895A (en) 1992-02-19 1993-02-17 Pyroelectric device
DE69312982T DE69312982T2 (en) 1992-02-19 1993-02-19 Pyroelectric device
EP93301219A EP0557109B1 (en) 1992-02-19 1993-02-19 Pyroelectric device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4-80536 1992-02-19
JP8053692 1992-02-19

Publications (2)

Publication Number Publication Date
JPH05296830A true JPH05296830A (en) 1993-11-12
JP2753920B2 JP2753920B2 (en) 1998-05-20

Family

ID=13721078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4141925A Expired - Fee Related JP2753920B2 (en) 1992-02-19 1992-05-08 Pyroelectric element

Country Status (1)

Country Link
JP (1) JP2753920B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08201167A (en) * 1994-09-30 1996-08-09 Samsung Electro Mech Co Ltd Piezoelectric-type infrared ray sensor
WO1999061870A1 (en) * 1998-05-22 1999-12-02 Matsushita Electric Industrial Co., Ltd. Method of manufacturing sensor and resistor element
CN102306436A (en) * 2011-07-08 2012-01-04 中兴智能交通(无锡)有限公司 Firework detecting method based on video image and system
US10809130B2 (en) 2016-11-14 2020-10-20 Murata Manufacturing Co., Ltd. Infrared detection circuit and infrared sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61213642A (en) * 1985-03-19 1986-09-22 Toshiba Corp Pyroelectric infrared detecting element
JPH0251033A (en) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd Infrared detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61213642A (en) * 1985-03-19 1986-09-22 Toshiba Corp Pyroelectric infrared detecting element
JPH0251033A (en) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd Infrared detector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08201167A (en) * 1994-09-30 1996-08-09 Samsung Electro Mech Co Ltd Piezoelectric-type infrared ray sensor
WO1999061870A1 (en) * 1998-05-22 1999-12-02 Matsushita Electric Industrial Co., Ltd. Method of manufacturing sensor and resistor element
US6395575B1 (en) 1998-05-22 2002-05-28 Matsushita Electric Industrial Co., Ltd. Method of manufacturing sensor and resistor element
CN102306436A (en) * 2011-07-08 2012-01-04 中兴智能交通(无锡)有限公司 Firework detecting method based on video image and system
US10809130B2 (en) 2016-11-14 2020-10-20 Murata Manufacturing Co., Ltd. Infrared detection circuit and infrared sensor

Also Published As

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