JPS6034085A - Manufacture of element for infrared radiation thermometer - Google Patents
Manufacture of element for infrared radiation thermometerInfo
- Publication number
- JPS6034085A JPS6034085A JP58144051A JP14405183A JPS6034085A JP S6034085 A JPS6034085 A JP S6034085A JP 58144051 A JP58144051 A JP 58144051A JP 14405183 A JP14405183 A JP 14405183A JP S6034085 A JPS6034085 A JP S6034085A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- substrate
- glass plate
- dummy
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、赤外輻射温度引用素子に関り−るものであり
、特に高信頼度、高性能な素子の製造法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an infrared radiation temperature quoting element, and particularly to a method for manufacturing a highly reliable and high performance element.
従来例の構成とその問題点
赤外輻射温磨組は最近まずま1高信頼化、高性能化され
る傾向にあり、そのため、F記温度計用素子及びその開
発に対する要望が高まりつつある。Conventional Structures and Problems There has recently been a trend towards higher reliability and higher performance of infrared radiation heating assemblies, and as a result, there has been an increasing demand for elements for F thermometers and their development.
この種の温度計として、弾性表面波遅延線素子を用いた
発振器からなるものがよく知られている。A well-known thermometer of this type is one consisting of an oscillator using a surface acoustic wave delay line element.
以下図面を用いて上記素子の構造について説明づる。第
1図に上記素子の斜視図を示す。第1図において、1.
2は弾性表面波を送受信するための交差指型電極を示す
。3は圧電性基板、4は圧電性基板3上の赤外受光部を
示す、、5は圧電性基板3を熱絶縁するための支持台を
示す。The structure of the above element will be explained below with reference to the drawings. FIG. 1 shows a perspective view of the above element. In FIG. 1, 1.
2 shows interdigital electrodes for transmitting and receiving surface acoustic waves. Reference numeral 3 indicates a piezoelectric substrate, 4 indicates an infrared light receiving section on the piezoelectric substrate 3, and 5 indicates a support base for thermally insulating the piezoelectric substrate 3.
次に温度計としての動作原理を簡単に説明づる。Next, I will briefly explain the principle of operation as a thermometer.
赤外輻射が赤外受光部4に入射した場合、圧電性基板3
の温度かわずか変化りる。この変化が電極1から電極2
へ伝播する弾性表面波の伝播時間の変化を引ぎ起こ1゜
従って、このわずかに変化りる伝播時間を検知づること
により、圧電性基板3の湿度変化を知り、赤外輻射温度
計として動作する。従って圧電性基板3の温度変化を大
きくするために、その板厚は50〜100μ瓦程度であ
る。When infrared radiation enters the infrared light receiving section 4, the piezoelectric substrate 3
The temperature changes slightly. This change occurs from electrode 1 to electrode 2.
This causes a change in the propagation time of the surface acoustic wave propagating to 1°.Therefore, by detecting this slightly changing propagation time, changes in the humidity of the piezoelectric substrate 3 can be detected, and the piezoelectric substrate 3 can operate as an infrared radiation thermometer. do. Therefore, in order to increase the temperature change of the piezoelectric substrate 3, the thickness of the piezoelectric substrate 3 is approximately 50 to 100 μm.
以下に従来の素子製造法について説明Jる。まず、圧電
性基板(2インヂΦ)表面上に多数個の交差指型電極を
形成し、同一基板上に多数個の素子を形成する。次に、
熱軟化性樹脂を上記基板上に塗布し、その上に研磨治具
を圧着して接着する。A conventional device manufacturing method will be explained below. First, a large number of interdigital electrodes are formed on the surface of a piezoelectric substrate (2 inches Φ), and a large number of elements are formed on the same substrate. next,
A thermosoftening resin is applied onto the substrate, and a polishing jig is pressure-bonded thereon.
次に、適当な粒径の砥粒を用いて、上記基板の裏面を研
磨し、所定の板厚(50〜100μm/)とする。Next, the back surface of the substrate is polished to a predetermined thickness (50 to 100 μm/) using abrasive grains of an appropriate particle size.
次に、加熱し、所定の板厚となった基板を研磨治具より
取りはずし、再び熱軟化性樹脂を用いて、上記基板を切
断・分離用ガラス板に接着し、ダイサーにより素子サイ
ズ、例えば3 X 5 mm用に切断、分離する。次に
、上記素子を洗浄後、パッケージ例えばTo−5に第1
図に示したようにマウン1−し、超音波ボンダーにより
結線し、素子をl潰していた。Next, the substrate heated to a predetermined thickness is removed from the polishing jig, and the substrate is again bonded to a glass plate for cutting and separation using a thermosoftening resin, and the device size is adjusted using a dicer, e.g. Cut and separate to 5 mm. Next, after cleaning the above element, the first
As shown in the figure, the device was mounted, connected using an ultrasonic bonder, and the device was crushed.
上記従来の製造法にj3いて、研磨により所定の板厚と
なった圧電性基板を、(llll消磨から切断・分離用
ガラス板に接着しなおづ゛だめ、非常にm細な注意を要
し、作業性が悪く、また熱処理によるff:電性基板の
割れも数多く、発生し、非常に歩留りの悲いものであっ
た。In the above conventional manufacturing method, the piezoelectric substrate that has been polished to a predetermined thickness must be re-adhered to the glass plate for cutting and separation after polishing, which requires very careful attention. However, the workability was poor, and many cracks occurred in the ff: conductive substrate due to heat treatment, resulting in a very poor yield.
さらに、研磨、切断、分離された薄板状の素子を洗浄す
るため、非常に能率が悪かった。また薄片状の素子を例
えばビンセットなどを用いて洗浄、組み立てをするため
、素子割れが多く、非常に歩留りの悪いものであった。Furthermore, the efficiency was extremely low because the thin plate-like elements that had been polished, cut, and separated had to be cleaned. Furthermore, since the flaky elements are cleaned and assembled using a bottle set, for example, the elements are often cracked and the yield is extremely low.
発明の目的
本発明は、上記従来の問題点を除去し、作業性の良い、
歩留りの向上した上記素子の製造法を提供することを目
的とづるものである。Purpose of the Invention The present invention eliminates the above-mentioned conventional problems, and provides a method with good workability.
The object of this invention is to provide a method for manufacturing the above-mentioned device with improved yield.
発明の構成
上記目的を達成するために、本発明は、赤外輻射温度計
に用いられる弾性表面波素子の製造法において、多数個
の交差指型電極が形成されIC圧電性基板表面に板厚が
一様でかつ表面の平滑なダミー板を第1の熱軟化性樹脂
で接着し、上記ダミー板を第2の熱軟化性樹脂で研磨治
具に接着し、上記基板を所定の板厚(例えば50〜10
0μm )になるまで研磨し、その後に第2の熱軟化性
樹脂のみを加熱軟化Uしめてダミー板付き圧電性基板を
研磨治具より取り外し、上記ダミー板付き圧電性基板を
素子ナイス(例えば3X5扁角)に切断、分離し、上記
素子をパッケージに接着剤例えばエポキシ樹脂などで接
着後、第1の熱軟化性樹脂を加熱軟化せしめてダミー板
を取り除くので、作業性J:く、歩留りよく素子を製造
できるものである。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a method for manufacturing a surface acoustic wave element used in an infrared radiation thermometer, in which a large number of interdigital electrodes are formed on the surface of an IC piezoelectric substrate. A dummy plate with a uniform and smooth surface is bonded with a first thermosoftening resin, the dummy plate is bonded to a polishing jig with a second thermosoftening resin, and the substrate is polished to a predetermined thickness ( For example 50-10
0 μm), then heat-soften only the second heat-softening resin, remove the piezoelectric substrate with the dummy plate from the polishing jig, and polish the piezoelectric substrate with the dummy plate to an element nice (for example, 3 After adhering the above-mentioned element to the package with an adhesive such as epoxy resin, the first heat-softening resin is heated and softened and the dummy plate is removed. can be manufactured.
実施例の説明
以下本発明の一実施例を図面に基づいCa2明する。第
2図において、10は研磨治具、11は熱軟化性樹脂層
、12は板厚の一様な例えば板厚0.5mmの平滑麿の
優れたダミーガラス板、13は熱軟化性樹1111層、
14は圧電性基板としてのLiNBO3基板(2インヂ
Φ、450μIn厚、Y−面)、15は圧電性基板14
の裏面を示す。第2図にa3いて、先ず圧電性基板14
(通常Ii)場合、2インヂΦのウェハー状)上に通常
のホトリソグラフィー技術により多数個の交差指型電極
を表面波の伝播方向がZ軸方位どなるよう形成し、同一
基板上に多数個の素子を形成する。次に、ダミーガラス
板12を加熱し、熱軟化性樹脂例えばクリアーワックス
〈軟化点130〜150℃)を薄く塗布して第1の熱軟
化性樹脂層13を形成し、その上にあらかじめ温めてお
いたウェハー状の圧電性基板14を表面が下になるよう
にして接着する。接着後、熱軟化性樹脂層13が均一に
薄くなるように加圧しながら加熱処理する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be explained below based on the drawings. In FIG. 2, 10 is a polishing jig, 11 is a thermo-softening resin layer, 12 is a smooth dummy glass plate with a uniform thickness, for example, 0.5 mm, and 13 is a thermo-softening resin 1111. layer,
14 is a LiNBO3 substrate (2 inch Φ, 450 μIn thickness, Y-plane) as a piezoelectric substrate, 15 is a piezoelectric substrate 14
Showing the back side. At a3 in FIG. 2, first the piezoelectric substrate 14
In the case of Ii, a large number of interdigital electrodes are formed on the same substrate (in the form of a 2-inch Φ wafer) using normal photolithography technology so that the propagation direction of the surface wave is aligned with the Z-axis direction. Form an element. Next, the dummy glass plate 12 is heated, and a thermosoftening resin such as clear wax (softening point 130 to 150°C) is thinly coated to form a first thermosoftening resin layer 13. The placed wafer-shaped piezoelectric substrate 14 is bonded with its surface facing downward. After adhesion, heat treatment is performed while applying pressure so that the thermoplastic resin layer 13 becomes uniformly thin.
次により軟化点の低い熱軟化性樹脂例えばエレク1−ロ
ンワックス(軟化点60〜80℃)よりなる第2の熱軟
化性樹脂層11を用いて、研磨冶具10に接るする。し
かる後、ウェハー状の圧電性基板14の裏面15を研磨
し、所望の板厚とJる。その後、仝休を徐々に加熱し、
接着層11のみを軟化せしめて研磨潰具10とガラス板
12を分離し、圧電性基板14とダミーガラス板12を
接着したまま圧電性基板14を素子ザイズに切断分離し
、素子とした。しかる後、ダミーガラス板付き素子をパ
ッケージ例えばTO−5に接着剤例えばエポキシ樹脂を
用いてマウン1−その後に、熱軟化性樹脂層13を加熱
軟化せしめてダミーガラス板12を取り除き、さらに、
素子表面の樹脂層13を洗浄して素子とした。Next, the polishing jig 10 is contacted with a second thermosoftening resin layer 11 made of a thermosoftening resin having a lower softening point, such as Elec-1-ron wax (softening point: 60 to 80° C.). Thereafter, the back surface 15 of the wafer-shaped piezoelectric substrate 14 is polished to a desired thickness. After that, gradually heat up the lily,
Only the adhesive layer 11 was softened to separate the polishing crusher 10 and the glass plate 12, and the piezoelectric substrate 14 was cut and separated into element sizes while the piezoelectric substrate 14 and the dummy glass plate 12 were adhered to form elements. Thereafter, the device with the dummy glass plate is mounted on a package, for example, TO-5, using an adhesive, such as an epoxy resin.Then, the thermoplastic resin layer 13 is heated and softened, and the dummy glass plate 12 is removed.
The resin layer 13 on the surface of the device was cleaned to prepare a device.
このように軟化温度の異なる2@類の熱軟化性樹脂を用
いて、圧電性基板、ダミーガラス板、研磨治具を順次接
着した後に、上記圧電性基板を研磨、切断、分離し、素
子をパッケージにマウントするので、作業性J、く、素
子を割ることもなく、歩留りよく、上記素子を製造する
ことが出来た。After sequentially bonding the piezoelectric substrate, dummy glass plate, and polishing jig using two types of thermoplastic resins with different softening temperatures, the piezoelectric substrate is polished, cut, and separated, and the device is assembled. Since the device was mounted on a package, it was possible to manufacture the device with good workability and a high yield without breaking the device.
りなわら、板厚50〜100μ瓦の素子に、板厚05順
のダミーガラ1、ス板が接着されているため、上記素子
は板厚0.55〜0.6Mのものとして取り扱うことが
出来、パッケージマウントにおいて、その作業性は大幅
に改善された。まIこ、素子表面の洗浄はパッケージに
マウントされた状態で行なうことができるため、作業性
よく、また歩留りよく製造することが可能となった。However, since the dummy glass plates 1 and 2 in the order of plate thickness 05 are glued to the element with a plate thickness of 50 to 100μ, the above element can be handled as having a plate thickness of 0.55 to 0.6M, The workability of package mounting has been greatly improved. Additionally, since the surface of the element can be cleaned while it is mounted on the package, it has become possible to manufacture the element with good workability and high yield.
なお、上記実施例において、圧電性基板とし−CLtN
I103結晶板を用いたが、非圧M性基板、例えばガラ
ス、ザファイアなどの基板上に圧電性iit+膜、例え
ば酸化亜鉛などから構成されたものであっても良い。ま
た、上記基板として、1−i−「a03などの結晶板で
あってもよい。また、PCM。In the above embodiment, the piezoelectric substrate is -CLtN
Although an I103 crystal plate is used, a piezoelectric IIT+ film such as zinc oxide may be used on a non-pressure M substrate such as glass or zaphire. Further, the substrate may be a crystal plate such as 1-i-"a03. Also, PCM.
P7丁などの圧電性磁器板であっても良い。A piezoelectric porcelain plate such as P7 may also be used.
また、弾性表面波素子として、第1図では遅延線型素子
を例にとったが、共振器型素子であってもよい。Moreover, although a delay line type element is taken as an example of the surface acoustic wave element in FIG. 1, a resonator type element may be used.
発明の効果
以上、本発明の素子t!I造法は、軟化点の異なる2種
類の熱軟化性樹脂を用いて、圧電性基板、ダミー板およ
び研磨冶具を順次接着して製造し、ダミー板付の素子を
パッケージにマウントした後、上記ダミー板を取りばす
して11造するので、作業性よく、歩留りよく素子が製
造することができ、その実用的効果は非常に大なるもの
である。More than the effects of the invention, the element of the invention t! In the I manufacturing method, a piezoelectric substrate, a dummy plate, and a polishing jig are sequentially bonded together using two types of heat-softening resins with different softening points. After mounting the element with the dummy plate on a package, Since the plates are removed and made into 11 pieces, the device can be manufactured with good workability and high yield, and its practical effects are very large.
第1図は赤外輻射温度計用弾性表面波素子の斜視図、第
2図は本発明の一実施例を説明するための断面図である
。
1.2・・・交差指型電極、3・・・圧電性基板、1o
・・・研磨治具、11.13・・・熱軟化性樹脂、12
・・・ダミーガラス板、14・・・圧電性基板、15・
・・基板の裏面代理人 森 本 義 弘
第1図FIG. 1 is a perspective view of a surface acoustic wave element for an infrared radiation thermometer, and FIG. 2 is a sectional view for explaining one embodiment of the present invention. 1.2... Interdigital electrode, 3... Piezoelectric substrate, 1o
... Polishing jig, 11.13 ... Thermosoftening resin, 12
...Dummy glass plate, 14...Piezoelectric substrate, 15.
...Representative for the back side of the board Yoshihiro Morimoto Figure 1
Claims (1)
するに際し、多数個の交差指型電極が形成された圧電性
基板表面に板厚が一様でかつ表面の平滑なダミー板を第
1の熱軟化性樹脂で接着し、上記ダミー板を第2の熱軟
化性樹脂で研磨治具に装着し、上記基板を所定の板厚に
なるまで研磨し、その後に、第2の熱軟化性樹脂のみを
加熱軟化せしめてダミー板付き圧電性基板を研磨治具よ
り取り外し、上記ダミー板付き圧電性基板を素子サイズ
に切断、分離し、上記素子をパッケージに接着剤例えば
エポキシ樹脂などで接着後、第1の熱軟化性樹脂を加熱
軟化せしめてダミー板を取り除く赤外輻射温度計用素子
の製造法。 2、圧電性基板が、二Aブ酸すチウム単結晶Y−面から
なり、かつ弾性表面波の伝播方向がZ軸方向であること
を特徴とする特許請求の範囲第1項記載の赤外輻射温度
計用素子の製造方法。[Claims] 1. When manufacturing a surface acoustic wave element used in an infrared radiation temperature meter, a piezoelectric substrate on which a large number of interdigital electrodes are formed has a uniform thickness and a surface. A smooth dummy board is glued with a first thermosoftening resin, the dummy board is attached to a polishing jig with a second thermosoftening resin, the board is polished to a predetermined thickness, and then Then, only the second heat-softening resin is heated and softened, the piezoelectric substrate with the dummy plate is removed from the polishing jig, the piezoelectric substrate with the dummy plate is cut and separated into element sizes, and the element is bonded to the package. A method of manufacturing an element for an infrared radiation thermometer, which comprises bonding with an agent such as epoxy resin, and then heating and softening the first thermoplastic resin to remove the dummy plate. 2. The infrared ray according to claim 1, wherein the piezoelectric substrate is made of a single crystal Y-plane of lithium dibutyrate, and the propagation direction of the surface acoustic wave is the Z-axis direction. A method for manufacturing an element for a radiation thermometer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58144051A JPS6034085A (en) | 1983-08-05 | 1983-08-05 | Manufacture of element for infrared radiation thermometer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58144051A JPS6034085A (en) | 1983-08-05 | 1983-08-05 | Manufacture of element for infrared radiation thermometer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6034085A true JPS6034085A (en) | 1985-02-21 |
Family
ID=15353170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58144051A Pending JPS6034085A (en) | 1983-08-05 | 1983-08-05 | Manufacture of element for infrared radiation thermometer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6034085A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002360735A (en) * | 2001-06-12 | 2002-12-17 | Combi Corp | Positional adjustment mechanism of lever and handle rotation mechanism using the theory thereof |
-
1983
- 1983-08-05 JP JP58144051A patent/JPS6034085A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002360735A (en) * | 2001-06-12 | 2002-12-17 | Combi Corp | Positional adjustment mechanism of lever and handle rotation mechanism using the theory thereof |
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