JPS6033368A - エッチング液の再生方法 - Google Patents

エッチング液の再生方法

Info

Publication number
JPS6033368A
JPS6033368A JP13943183A JP13943183A JPS6033368A JP S6033368 A JPS6033368 A JP S6033368A JP 13943183 A JP13943183 A JP 13943183A JP 13943183 A JP13943183 A JP 13943183A JP S6033368 A JPS6033368 A JP S6033368A
Authority
JP
Japan
Prior art keywords
etching
etching liquid
exchange resin
ion exchange
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13943183A
Other languages
English (en)
Inventor
Tateo Ite
射手　建雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13943183A priority Critical patent/JPS6033368A/ja
Publication of JPS6033368A publication Critical patent/JPS6033368A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、Ａノの薄膜形成回路用のエツチング液に関す
るものである。
〔発明の背景〕
Ａ！の薄膜形成回路用のエツチング液は、：ｒ−ツチン
グ処理量に、応じて液を更新する方法がとられているが
、溶出したＡノ量による液組成の変化により、エツチン
グ速度が変化する欠点を持っている。
〔発明の目的〕
本発明の目的は以上述べたような欠点を解消した、新規
な方法を取り入れた、エツチング液の再生管理方法を提
供するにある。
〔発明の概要〕
本発明は、Ａノ薄膜電極回路の形成工程における、エツ
チング液中に溶出したＡｌイオンを、強酸性カチオンイ
オン交換樹脂で吸着除去し、エツチング液組成を一定に
保つことによって、溶解速度か一定状態で作業できかつ
エツチング精度を向上させることかできる。
〔発明の実施例〕
図に示したように、１のエツチング槽にある２の酢酸４
０％りん酸４０チ硝酸１０％水１０％の組成からなるエ
ツチング液を、６のポンプを用い、４の流量側で、ＳＶ
ｌに調整して、５のイオン交換樹脂（強酸性カチオンイ
オン交換樹脂、ダイヤイオンＰＫ２０４）塔、乙のフィ
ルター、７の熱交換器で３５°Ｃに調整して、１のエツ
チング槽へ戻し再度使用した。
〔発明の効果〕
本発明により、エツチング液組成の変動を防止し、エツ
チング速度を一定化することにより、エツチング精度を
一定に維持できる。
【図面の簡単な説明】
図は、本発明の一実施例のエツチング液の男生方法を説
明するブロック図である。 １・・・エツチング槽、　２・・・エツチング液、３・
・・ポンプ、　４・・流量計、 ５・・イオン交換樹脂、　６・・フィルター、７・・・
熱交換器。

Claims (1)

  1. 【特許請求の範囲】 使用中のエツチング液をイオン交換樹脂塔。 フィルター、熱交換器をＳＶ１〜２０の速度範囲で通過
    させ、液中に溶解し１こｋｌイオンを吸着除去シ、エツ
    チング液として再度使用する一連の工程からなることを
    特徴とするエツチング液の再生方法。
JP13943183A 1983-08-01 1983-08-01 エッチング液の再生方法 Pending JPS6033368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13943183A JPS6033368A (ja) 1983-08-01 1983-08-01 エッチング液の再生方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13943183A JPS6033368A (ja) 1983-08-01 1983-08-01 エッチング液の再生方法

Publications (1)

Publication Number Publication Date
JPS6033368A true JPS6033368A (ja) 1985-02-20

Family

ID=15245032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13943183A Pending JPS6033368A (ja) 1983-08-01 1983-08-01 エッチング液の再生方法

Country Status (1)

Country Link
JP (1) JPS6033368A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971654A (en) * 1987-08-27 1990-11-20 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process and apparatus for etching semiconductor surfaces
EP1592050A1 (en) * 2003-02-05 2005-11-02 Idemitsu Kosan Company Limited Method for manufacturing semi-transparent semi-reflective electrode substrate, reflective element substrate, method for manufacturing same, etching composition used for the method for manufacturing the reflective electrode substrate
JP2008101247A (ja) * 2006-10-19 2008-05-01 Sumitomo Precision Prod Co Ltd エッチング廃液の再生方法及び再生装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971654A (en) * 1987-08-27 1990-11-20 Wacker-Chemitronic Gesellschaft Fur Electronik-Grundstoffe Mbh Process and apparatus for etching semiconductor surfaces
EP1592050A1 (en) * 2003-02-05 2005-11-02 Idemitsu Kosan Company Limited Method for manufacturing semi-transparent semi-reflective electrode substrate, reflective element substrate, method for manufacturing same, etching composition used for the method for manufacturing the reflective electrode substrate
EP1592050A4 (en) * 2003-02-05 2007-10-17 Idemitsu Kosan Co PROCESS FOR PRODUCING SEMI-TRANSPARENT AND SEMI-REFLECTIVE ELECTRODE SUBSTRATE, SUBSTRATE FOR REFLECTIVE MEMBER, METHOD FOR MANUFACTURING THE SAME, ETCHING COMPOSITION FOR USE IN THE METHOD OF MANUFACTURING REFLECTING ELECTRODE SUBSTRATE
JP2008101247A (ja) * 2006-10-19 2008-05-01 Sumitomo Precision Prod Co Ltd エッチング廃液の再生方法及び再生装置

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