JPS6031259A - 光起電力装置 - Google Patents

光起電力装置

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Publication number
JPS6031259A
JPS6031259A JP58139546A JP13954683A JPS6031259A JP S6031259 A JPS6031259 A JP S6031259A JP 58139546 A JP58139546 A JP 58139546A JP 13954683 A JP13954683 A JP 13954683A JP S6031259 A JPS6031259 A JP S6031259A
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JP
Japan
Prior art keywords
photoelectric conversion
substrate
regions
photovoltaic device
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58139546A
Other languages
English (en)
Other versions
JPH0587994B2 (ja
Inventor
Masaru Yamano
山野　大
Yukinori Kuwano
桑野　幸徳
Shoichi Nakano
中野　昭一
Tsugifumi Matsuoka
松岡　継文
Soichi Sakai
総一 酒井
Hirosato Yagi
八木　啓吏
Nobuhiro Okuda
奥田　信宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58139546A priority Critical patent/JPS6031259A/ja
Priority to FR8412006A priority patent/FR2550007A1/fr
Publication of JPS6031259A publication Critical patent/JPS6031259A/ja
Priority to US06/899,789 priority patent/US4670293A/en
Publication of JPH0587994B2 publication Critical patent/JPH0587994B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • H02S20/25—Roof tile elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （イ）　差業上の利用分野 本発明は元エネルギを％７気エネルギに直接変換する光
起電力装置に関する。
（ロ）　従来技術 元エネルギを直接％気エネルギＶＣＫ換する光起電力装
置、Ｊ”Ｊ謂太陽゛町池に無Ｅ蔵な太陽光？主たるエネ
ルギのとし７ているために、エネルギ負のの枯渇が問題
となる中で脚元金浴でいる。太陽は晴天時に約ＩＫＶ／
／ｍ２のエネルギを地、＆に与えており、家庭で期るエ
ネルギを隼気エネルギに変換する光起電力装置を家庭用
電力詠とする場合、光起電力装置の光電変換効率を１０
％としても１００Ｗ／ｍ’の電力しか得られないために
、限られた面積に於いて如何に出力を上昇せしめるかが
問題となっている。
（ハ）発明の目的 本発明は斯る光起電力装置の大出力化？因る上で有益な
構造を提供するものである。
に）　発明の構成 本発明光起電力装置は、曲面状絶縁表面を備えた基板と
、該基板の絶縁表面に被着された複数の光電変換領域と
、から成り、上記複数の光電変換領域は基板表面の曲面
の出線と又メすべく整列配＠はれた構成にある。
競り　実症例 断面図喚−であって、は）はガラス等の透元性且つ絶縁
性の材料を瓦状に成形し波状の絶線表面が付与された基
板、＋２１＋２１・・は上記基板（１）の絶縁表面に一
定間隔で被着されたｆｔ、電変換領域である。上記光電
変換領域ｔ２＋　＋２）・・・は、例えば基板は）側か
ら、酸化スズ、酸化インジウムスズ等の透明導電膜（３
）（３）・・と、その内部に半導体接合を備えた非晶質
半導体膜＋４１　＋４１・・・と、該半導体膜＋４１　
＋４１・・・とオーミック接触するアルミニウム等の裏
面電極膜＋５１　＋５１・・・と、が順次積層されたミ
クロンオーダの膜状を呈する。
各非晶質半導体膜＋４１　＋４１・・は、その内部に例
えば膜面に平行なＰ工Ｎ接合を彩度すべく受光面側から
厚み５ト２５ＯＡａ度のＰ型層、４０００〜７０００Ａ
程度の１型（真性）層及び３０トロ０ＯＡ程度のＮ型層
が順次積ｌω被被着れ、従って基板（１）及び透明尋′
屯膜（３＋　＋３１・・・を透過して光入射があると、
主に工型層に於いて自由状態の電子及び正孔が発生し、
勘る電子及び正孔は１６６１輪が形成するＰ工Ｎ接合電
界に引かね、て各透明導電膜＋３１　＋３１・・・及び
裏面電極膜（５）（５）・・・に集菫烙れ、隣接する元
雷舊ゞ換′１Ｉ１１域＋２１　＋２１・・・の透明導電
膜＋３１　＋３１・・・と鏡面電極膜＋５１　＋５１・
・・との１皆により愉気的に相加された電力が取り出き
れる。
而して、本発明の特徴ｉＩ：Ｌ俵数の光電変換領域（２
）（２）・、・（！一基板（１）表面の曲面の画線（６
）とダメすべく聚列配置ぜしめたところにある。即ち、
木実極例に垂直にダメすべく短冊状の光Ｖ変換領域＋２
１　＋２１・・・が平行に整列配置きれている。第２図
は丁匠斯る出線（６）に沿った断面図に該当する。
尚、上記出線とは周知の如く１つの波に於ける最大振幅
点、１２＋］ち山を波の進行方向に対して垂直方向に結
んだ線のことであ・る。
＋２１　＋２１・・・に対する入射角との関係を南中時
を中Ｉｖにθの角度太陽が東若しくは西に傾斜した時分
例に採って模式的に示したものである。即ち束にθの角
度傾斜しｆｃ位置から太陽光線ｓ１が光電変換領域＋２
１　＋２１・・？照射せしめると、受光部Ａには該太陽
光線Ｓ１が垂直に入射し、該受光部Ａの光電変換動作は
最尚となる。然し乍ら、受光部Ｂ、受元部Ｃには太陽光
線Ｓ１が垂直に入射しないために、その入射光エネルギ
は、太陽光線ｓ１の元エネルギｈνとし、夫々の入射角
をＣ３，Ｃ２としｆｃ場合、ｈｖｅｉｎα１゜ｈνｓｉ
ｎα２となり入射角の小ぐい受光部Ｃの入射光エネルギ
は最小となる。
ただし、上記入射光エネルギは入射光を太陽光線Ｓ１の
みとし、他方間からの党の入射及び反射による入射ｔｅ
の減衰等については考慮していない。
従って、受光部Ａ、Ｂ、Ｃの各々は上記入射光エネルギ
ｈν、ｈνｓｉｎαｌ＋　ｈν己ｎα２に比例し、て党
電変倹動作？為し、受ｙＣ部Ａの発電量が最大となり、
受光部Ｃの発電量は最小となる。即ち、受光部Ａ。
Ｂ、Ｏの各々て於ける発Ｓｒ量が相違する。
一方、太陽光線Ｓ２が受光部Ｂに垂直に入射する南中時
にあっては、該受光部Ｂの発電量が最大となり入射角の
ｓｉｎ成分の等しい受光部Ａと受光部Ｃとの発電量は受
光部Ｂより小さい。
捷た、太陽か西にθの角度傾斜した位置から太陽光線Ｓ
３が光ち変換領域＋２１　＋２１・・・勿照射した場合
、受光ｇＩ！Ａ、　Ｂ、　Ｃの谷々の発′改量の大小関
係は東にθの角開傾斜した位置から照射した場合と逆に
受光部Ｃが最大となる。
この様に各受光部に於ける発電量は太陽の移動と共に７
化する。
今、例えば第４図の如く紀６図に示した受九部へ、　Ｂ
、　Ｃを受光中心とする受光−１積の等しい第１゜第２
．第３の光電変換領域（２ａ）　（２ｂ）（２ｃ）及び
他の第４．第５の光電変換領域（２ｄ）Ｃ２８）　’を
雷気的に直列接続せしめた光起電力装置？考えて見る。
即ち、東Ｏでθ傾斜した太陽光線Ｓ１に対しては第１の
光電変換領域（２ａ）が最大の元ｆ１．変換動作により
約１５ｍＡ／ｃｉの元電流？発生するものの、第２、第
６の光電変換領域（２ｂ）（２ｃ）のそれは、入射角ｎ
、、α２を６０°、６０°とすると、１５１ｎＡ／ｃｙ
！　Ｘ　ｓ加６０°中１６ｍ　ＡＡＩＩ　Ｈ肌ル［」さ
れるために、第６の光電変換領域（２Ｃ）の７．５ｍヤ
舖となる。即ち、第４図ｅて示すｙ口〈瓦状の基板（１
）の出線（６）に平行に光電変換領域（２ａ）（２ｂ）
３−（２ｃ）・・力ふ自装置されプこ光起電力装置にあ
っては成る１つの光電変換領域が太陽の移動に伴なって
最大の充電流を発生したとしても、他の九′２ぢ変換領
域がその充電流より小感くなると、元起電力装置全体の
出力電力はその小さな元′ｉＵ流に差別これる。
然し乍ら、本発明の如く出線（６）に変叉すべく各光電
変換領域＋２１　ｆ２＋・・・を整列配＠せしめると、
１つの光電変換領域＋２１　＋２１・・・が上記受光部
Ａ、Ｂ、Ｏの全てを同時に含むことになり、太陽が移動
したとしても各光電変換領域＋２１　Ｆ２１・・・が発
生する光電流は絶えず等しく、結果的に光起電力装置全
体の出力電流は上昇する。例えば出力電流が７．５ｍｕ
鵠の第４図の装置と比較して、本発明装置の出力室がも
は、受光部Ａ、　Ｂ、　Ｃに於いて発生した光電、流の
相加平均である となり、従って四−形状の基板（１）及び等しい総。
受元面槓を備えた光起電力装置の出力電力に於いて約６
０％の上昇が図れる。
（へ）　発明の効果 本発明は以上の説明から明らかな如く、複数の光電変換
領域を基板表面の曲面の山釈とダメすべく整夕１配置せ
しめたので、各九％、変換領域は太陽の移動に伴なって
相違することなくその入射角に応じた均一なＸ電流を発
生し、各光電変換＠域の出力が相違することに起因する
一出力電流の低下を回避し得、その結果同一面積にも拘
らず光起電力装置全体としての出力を上昇せしめること
ができる０
【図面の簡単な説明】
第１囚は大発明九起２′力装置の斜伐図、第２％は第１
図に於けるＡ−Ａ線断面図、第６図は本発明全説明する
ための模式図、第４図は本発明光起電力装置と比較され
た従来の光起電力装置の糾視図、を夫々示している。 ＋１１　・・・基板、Ｆ２１　（２ａ）（２ｂ）（２Ｃ
）・・光電変換領域１（６）・・出線〇 第２図

Claims (1)

    【特許請求の範囲】
  1. （１）　曲面状絶縁表面を備えた基板、該基板の絶縁表
    面に被着された複数の光電変換領域、から成シ、上記複
    数の光電変換領域は基板表面の曲面の出線と父叉すべく
    整列配置きれていることを特徴とした光起電力装置。
JP58139546A 1983-07-29 1983-07-29 光起電力装置 Granted JPS6031259A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58139546A JPS6031259A (ja) 1983-07-29 1983-07-29 光起電力装置
FR8412006A FR2550007A1 (en) 1983-07-29 1984-07-27 Method for producing a semiconducting film and photovoltaic device obtained by the method
US06/899,789 US4670293A (en) 1983-07-29 1986-08-22 Method of making semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58139546A JPS6031259A (ja) 1983-07-29 1983-07-29 光起電力装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59002292A Division JPS6035579A (ja) 1983-07-29 1984-01-09 光起電力装置

Publications (2)

Publication Number Publication Date
JPS6031259A true JPS6031259A (ja) 1985-02-18
JPH0587994B2 JPH0587994B2 (ja) 1993-12-20

Family

ID=15247780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58139546A Granted JPS6031259A (ja) 1983-07-29 1983-07-29 光起電力装置

Country Status (1)

Country Link
JP (1) JPS6031259A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01168995U (ja) * 1988-05-18 1989-11-29
JPH036848U (ja) * 1989-06-05 1991-01-23

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811261U (ja) * 1981-07-14 1983-01-25 長島　正彦 瓦

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811261B2 (ja) * 1980-04-11 1983-03-02 新日本製鐵株式会社 固体潤滑剤を含有する溶射皮膜の形成法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811261U (ja) * 1981-07-14 1983-01-25 長島　正彦 瓦

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01168995U (ja) * 1988-05-18 1989-11-29
JPH036848U (ja) * 1989-06-05 1991-01-23

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