JPS6030193A - Function device - Google Patents
Function deviceInfo
- Publication number
- JPS6030193A JPS6030193A JP13753683A JP13753683A JPS6030193A JP S6030193 A JPS6030193 A JP S6030193A JP 13753683 A JP13753683 A JP 13753683A JP 13753683 A JP13753683 A JP 13753683A JP S6030193 A JPS6030193 A JP S6030193A
- Authority
- JP
- Japan
- Prior art keywords
- functional device
- substrate
- flexible insulating
- wiring
- functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は折曲げ可能な薄膜、或いは厚膜デバイス等の機
能デバイスに関する。特にその実装法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to functional devices such as bendable thin film or thick film devices. In particular, it concerns how to implement it.
第1図は従来技術の一例で、別々の基板11゜12各々
の上に形成された薄膜あるいは厚膜機能性デバイス15
があり、それに接続された端子部14を外部配線13に
よって接続する方法が用いられていた。この方法は外部
配線13を行う点で手間がかかり、低コスト化が困難で
あるとか、接続部での信頼度が低い、また微細化が困難
といつた欠点があった。FIG. 1 is an example of the prior art in which thin film or thick film functional devices 15 are formed on separate substrates 11 and 12, respectively.
There is a method in which the terminal section 14 connected to the terminal section 14 is connected by an external wiring 13. This method has the disadvantages that it takes time and effort to conduct the external wiring 13, that it is difficult to reduce costs, that reliability at the connection part is low, and that miniaturization is difficult.
第2図は他の従来技術の一例でステンレス薄板や有機フ
ィルム上に形成された薄膜機能性デバイスで、これをコ
ンパクトに実装するため円筒状や楕円筒状にまいて用い
る場合を示す。この方法は簡便であるがあまりまき込み
直径を小さくすると機能形デバイスの特性が劣化すると
いった不都合が生ずる。例えば厚さ100μmのポリイ
ミドフィルム上に形成したアモルファスシリコン薄膜ト
ランジスタの場合まき込み直径を2crnとするとリー
ク電流が増える等の欠点が明らかとなった。FIG. 2 is an example of another conventional technique, which shows a thin film functional device formed on a thin stainless steel plate or an organic film, which is spread in a cylindrical or elliptical shape for compact packaging. Although this method is simple, if the winding diameter is made too small, the characteristics of the functional device will deteriorate. For example, in the case of an amorphous silicon thin film transistor formed on a polyimide film with a thickness of 100 .mu.m, it has become clear that when the diameter of the transistor is set to 2 crn, there are drawbacks such as an increase in leakage current.
本発明の目的はこれらの欠点をなくシ、折り曲げ可能な
機能デバイスを提供するにある。The object of the invention is to eliminate these drawbacks and provide a foldable functional device.
本発明は折曲げる部分には機能性デノ(イスを配置せず
、折曲げ部に配線のみを配置し、コンノくクトに折りた
ためる構造とした上、外部接続配線等が不要である。そ
して安価かつ高信頼の実装方式を提供出来る点に意味が
ある。The present invention does not have a functional denomination (chair) placed in the bending part, only wiring is placed in the bending part, and it has a structure that can be folded into a compact shape, and there is no need for external connection wiring. It is meaningful in that it can provide an inexpensive and highly reliable mounting method.
機能デバイスなどをとうさいする基板としては可とり性
の絶縁性基板を用いる。代表的な例は高分子樹脂でポリ
イミド樹脂、ポリエチレン等多くの材料を用い得る。又
金属等の薄板の上に絶縁性材料を薄く被覆したものも可
とり性ならば勿論艮い。A removable insulating substrate is used as a substrate on which functional devices are mounted. A typical example is a polymer resin, and many materials such as polyimide resin and polyethylene can be used. Also, a thin plate of metal or the like coated with a thin layer of insulating material is of course not acceptable as long as it is removable.
本願明細書においては、「絶縁性基板」という用語はこ
うした実質的に絶縁性となされた基板をも含むものとす
る。In this specification, the term "insulating substrate" includes such a substantially insulating substrate.
上述の機能デバイス間の配線は通常の配線を用い得る。Ordinary wiring can be used for the wiring between the above-mentioned functional devices.
以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
[実施例1]
第3図はポリイミド基板(厚さ200μm)にアモルフ
ァスシリコン薄膜を用いた薄膜トランジスタ・メモリを
形成し、コンノ(クトに実装する場合の実施例を示す。[Embodiment 1] FIG. 3 shows an embodiment in which a thin film transistor memory using an amorphous silicon thin film is formed on a polyimide substrate (thickness 200 μm) and mounted on a board.
第3図(a)は基板31のボ1ノイミドフイルム基板上
に32の領域のみ薄膜トランジスタメモリ群を形成し、
それぞれの間はアルミ薄膜配線33により機能的に接続
されている。これを第3図(b)のごとく折曲げ、接続
端子群34に接続する。この様にすると折曲げ部分の曲
率半径は0.5胴程度と小さくしても断線等の不都合は
生ぜず、しかも機能性デバイスであるメモリ素子特性は
このメ(す群の部分がほとんど曲げられないため第3図
(a)の状態と比べてその特性は全く変化がなかった。In FIG. 3(a), a thin film transistor memory group is formed only in a region 32 on a boron imide film substrate 31,
Each of them is functionally connected by an aluminum thin film wiring 33. This is bent as shown in FIG. 3(b) and connected to the connection terminal group 34. In this way, even if the radius of curvature of the bent part is as small as about 0.5 mm, problems such as wire breakage will not occur, and the characteristics of the memory element, which is a functional device, are such that most of the parts in this group are not bent. Therefore, the characteristics did not change at all compared to the state shown in FIG. 3(a).
第3図(b)では外折り部分と内折部分が交互に利用さ
れているが、外折部分は曲率半径を0.3m+以下とす
ると一部断線することがあった。In FIG. 3(b), the outwardly folded portion and the inwardly folded portion are used alternately, but if the radius of curvature of the outwardly bent portion is set to 0.3 m+ or less, a part of the wire may be broken.
しかしながらメモリ部分を曲げる場合に半径が約1cr
n以下になると特性劣化が見られるのと比較して、極め
て小半径まで高信頼で利用出来る点が優れており、本発
明の特長である。However, when bending the memory part, the radius is approximately 1 cr.
Compared to the case where characteristics deteriorate when the temperature is less than n, the present invention is superior in that it can be used with high reliability even in extremely small radii, which is a feature of the present invention.
この場合基板として厚さ50μmのステンレス板の上に
ポリイミド等の絶縁層を設けたものを用いても同様の実
装方法が実現出来た。また折曲げる段数は何段でも良く
、また一方向に曲折けるだけでなくても良い。第4図は
機能デバイスの配置する部分をうずまき旅に配置し、配
線部分で順次折曲げる場合を示す。第5図は一度二重に
折曲げ、さらに多区分に折曲げる場合を示す。第6図は
各機能性デバイス群62がそれぞれ三次元的に結ばれ、
これを(a)→(b)→(C)のごとく折曲げる場合の
例を示す。In this case, a similar mounting method could be realized using a substrate having an insulating layer made of polyimide or the like provided on a stainless steel plate having a thickness of 50 μm. Further, the number of stages to be bent may be any number, and it is not necessary to bend only in one direction. FIG. 4 shows a case where the functional device is arranged in a spiral pattern and the wiring parts are sequentially bent. FIG. 5 shows the case where it is folded twice and then folded into multiple sections. In FIG. 6, each functional device group 62 is connected three-dimensionally,
An example of folding this as shown in (a) → (b) → (C) will be shown.
これらの場合、機能性デバイス群を形成する部分はりジ
ッドまたは比較的かたい基板とし、配線部分(折曲げ部
分)をより7レキシプルにすることにより、実用IJJ
にはよりコンパクトで信頼性の高い実装方法を提供出来
る。また機能性デバイスを基板の両面に形成することも
可能であり、実装密度同上に役立つ。In these cases, practical IJJ can be achieved by making the part forming the functional device group a rigid board or a relatively hard substrate, and by making the wiring part (bending part) more 7 lexical.
This provides a more compact and reliable implementation method. It is also possible to form functional devices on both sides of the substrate, which helps increase packaging density.
本実施例ではアモルファスシリコンを用いてメモリーの
場合について述べたが、勿論これはメモリに限るもので
はない。In this embodiment, the case of memory using amorphous silicon has been described, but of course this is not limited to memory.
[実施例2]
第7図は本実施例の他の例であって、前述の折曲げ法に
よりコンパクトに多層化されたものを硬璽
櫨プラスチックの箱に入れ、端子部のみ外部に出した構
造とし、必要に応じて本体に着脱可能としたものである
。71はコンパクトに各層化退れた薄膜デバイス、72
はプラスチックの箱、73は外部接続端子である。[Example 2] Figure 7 shows another example of this example, in which a compact multi-layered product made by the above-mentioned folding method was placed in a rigid plastic box, and only the terminal portion was exposed outside. It has a structure that allows it to be attached to and detached from the main body as needed. 71 is a thin film device in which each layer is compactly degenerated, 72
is a plastic box, and 73 is an external connection terminal.
本発明によれば基板を折曲げることにより実質的に三次
元的に機能デバイスを配置でき、しかも各デバイス間は
外部接続配線等を用いることなく接続出来るのでその経
済的効果ははかりしれない。According to the present invention, functional devices can be arranged substantially three-dimensionally by bending the substrate, and each device can be connected without using external connection wiring, so the economic effects are immeasurable.
第1図は従来法による多層実装の例を示す図、第2図は
フレキシブルフィルム上に形成した機能デバイス群をも
つ場合にコンパクトに実装する従来法の例を示す図、第
3図は本発明による実装例を示す図、第4〜6図は実装
のだめの折曲げの例を示す図、第7図は折曲げた機能デ
バイスを外箱内に実装した例を示す図である。
31.41,51.61・・・基板、32,42゜52
.62・・・機能デバイス群、33,43,53゜第2
(2)
第 3(211
第 4[D
箇 5(21
第 6 (2)
第1頁の続き
■発明者中川 清和
@発明者松原 宏和
e1発明者 犬山 瑛−
国分寺市東恋ケ窪1丁目28幡地 株式会社日立製作所
中央研究所内
国分寺市東恋ケ窪1丁目28幡地 株式会社日立製作所
中央研究所内
国分寺市東恋ケ窪1丁目28幡地 株式会社日立製作所
中央研究所内Figure 1 is a diagram showing an example of multilayer mounting using a conventional method, Figure 2 is a diagram showing an example of a conventional method for compactly mounting a group of functional devices formed on a flexible film, and Figure 3 is a diagram showing an example of the present invention. FIGS. 4 to 6 are diagrams showing an example of folding the mounting pad, and FIG. 7 is a diagram showing an example of mounting a folded functional device in an outer box. 31.41, 51.61...Substrate, 32, 42°52
.. 62... Functional device group, 33, 43, 53° 2nd
(2) No. 3 (211 No. 4 [D Article 5 (21 Article 6 (2) Continuation of page 1 ■ Inventor Kiyokazu Nakagawa @ Inventor Hirokazu Matsubara e1 Inventor Ei Inuyama - 1-28 Hataji, Higashikoigakubo, Kokubunji City Stock Company Hitachi, Ltd. Central Research Laboratory 1-28 Higashikoigakubo, Kokubunji City Hitachi, Ltd. Central Research Laboratory 1-28 Higashikoigakubo, Kokubunji City Hitachi, Ltd. Central Research Laboratory
Claims (1)
上の少なくとも一部に機能デバイス部が少なくともとう
載され、前記機能デバイス部がとり載されざる可とう性
絶縁基板部分で折曲げがなされる如く構成された機能デ
バイス。 2、前記可とう性絶縁基板部分に配線を有することを特
徴とする特許請求の範囲第1項記載の機能デバイス。 3、前記基板は全てが可とう性絶縁基板なることを特徴
とする特許請求の範囲第1項又は第2項記載の機能デバ
イス。 4、前記可とう性絶縁基板は導電性基板上に可とう性絶
縁膜が設けられて成ることを特徴とする特許請求の範囲
第1項又は第3項記載の機能デバイス。 5、前記機能デバイス部は薄膜あるいは厚膜機能デバイ
スにより構成されることを特徴とする特許請求の範囲第
1項記載の機能デバイス。 6、前記機能デバイス部が複数個ノリ状に前記基板上に
配列されて成ることを特徴とする特許請求の範囲第1項
記載の機能デバイス。 7、前記機能デバイス部が複数個マトリクス状に前記基
板上に配列されて成ることを特徴とする特許請求の範囲
第1項記載の機能デバイス。[Scope of Claims] 1. A flexible insulating substrate on which a functional device portion is at least partially mounted on at least a portion of the substrate including a flexible insulating substrate portion, and on which the functional device portion is not mounted. A functional device that is configured so that it can be bent at certain parts. 2. The functional device according to claim 1, wherein the flexible insulating substrate portion has wiring. 3. The functional device according to claim 1 or 2, wherein all of the substrates are flexible insulating substrates. 4. The functional device according to claim 1 or 3, wherein the flexible insulating substrate is formed by providing a flexible insulating film on a conductive substrate. 5. The functional device according to claim 1, wherein the functional device section is constituted by a thin film or thick film functional device. 6. The functional device according to claim 1, wherein a plurality of the functional device sections are arranged on the substrate in a glue-like manner. 7. The functional device according to claim 1, wherein a plurality of the functional device sections are arranged on the substrate in a matrix.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13753683A JPS6030193A (en) | 1983-07-29 | 1983-07-29 | Function device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13753683A JPS6030193A (en) | 1983-07-29 | 1983-07-29 | Function device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6030193A true JPS6030193A (en) | 1985-02-15 |
Family
ID=15200975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13753683A Pending JPS6030193A (en) | 1983-07-29 | 1983-07-29 | Function device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6030193A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278786A (en) * | 1989-04-19 | 1990-11-15 | Mitsumi Electric Co Ltd | Circuit board |
-
1983
- 1983-07-29 JP JP13753683A patent/JPS6030193A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278786A (en) * | 1989-04-19 | 1990-11-15 | Mitsumi Electric Co Ltd | Circuit board |
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