JPS6030148A - Evaluating method of adhesion of thin-film - Google Patents

Evaluating method of adhesion of thin-film

Info

Publication number
JPS6030148A
JPS6030148A JP13827983A JP13827983A JPS6030148A JP S6030148 A JPS6030148 A JP S6030148A JP 13827983 A JP13827983 A JP 13827983A JP 13827983 A JP13827983 A JP 13827983A JP S6030148 A JPS6030148 A JP S6030148A
Authority
JP
Japan
Prior art keywords
wafer
thin
film
adhesion
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13827983A
Other languages
Japanese (ja)
Inventor
Mikio Segawa
幹雄 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13827983A priority Critical patent/JPS6030148A/en
Publication of JPS6030148A publication Critical patent/JPS6030148A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To apply even samples for an evaluation to products, and to evaluate the adhesion of a thin-film easily without requiring special operating time by spraying water against the surface of the thin-film formed on a substrate in a beam shape and evaluating the adhesion of the thin-film by the magnitude of hydraulic pressure through which an exfoliation is generated. CONSTITUTION:A spindle 1 to which a wafer 4 is fitted is turned, and the wafer 4 is scanned up to an end from the end of the wafer while beam-shaped high- pressure water 5 discharged from a nozzle 6 is sprayed. The wafer 4 is hydro- extracted by the increase of the revolution of the spindle 1, the wafer 4 is removed, and the state of peeling of a thin-film is observed. The work functions as a washing process in a manufacturing process for the wafer 4 in combination. High-pressure water such as one at 25kg/cm<2> is sprayed against the thin-film, and the adhesion of the thin-film is regarded as acceptable one when the thin- film is peeled by less than 5mm. from the outer circumference of the wafer and as defective one when the thin-film is peeled by 5mm. or more, and acceptable or defective adhesion can be discriminated.

Description

【発明の詳細な説明】 (al 発明の技術分野 本発明はウェハー上に形成した薄膜の密着力を評価する
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a method for evaluating the adhesion of a thin film formed on a wafer.

(bl 技術の背景 混成集積回路やバブルメモリ用のチップの製造において
、基板上に形成された厚膜は一般に基板と厚膜の密着力
が大きく膜の剥離に関して特に気を使うことばないが、
ウェハーを基板としてその上に形成した薄膜、特に5i
02のウェハーを基板としてその上に形成したNi−F
e系の薄、膜は密着力が小さく、薄膜を形成する過程で
継続的に密着力の変化を監視する必要がある。このよう
な継続的評価に破壊試験的な方法を適用することば、評
価に多くの作業時間を必要とし、また製品の歩留りを低
下せしめ好ましい方法ではない。密着力の許容限界を設
定し評価用試料の密着力が許容限界以上であれば製品に
流用でき、しかも評価のために特別な作業時間を必要と
しない密着力の評価方法の適用が望まれている。
(bl Technology Background In the production of chips for hybrid integrated circuits and bubble memories, the thick film formed on the substrate generally has a strong adhesion between the substrate and the thick film, so there is no need to be particularly careful about peeling the film.
Thin films formed on a wafer as a substrate, especially 5i
Ni-F formed on the 02 wafer as a substrate
E-based thin films have low adhesion, and it is necessary to continuously monitor changes in adhesion during the process of forming the thin film. Applying a destructive testing method to such continuous evaluation is not a preferable method because it requires a lot of work time for evaluation and also reduces the yield of the product. It is desired to apply an adhesion evaluation method that sets an allowable limit for adhesion, and if the adhesion of the evaluation sample is greater than or equal to the allowable limit, it can be applied to products, and that does not require special work time for evaluation. There is.

(11,) 従来技術と問題点 薄膜の密着力を評価する方法として一般に耐クロスカッ
ト性評価といわれる方法が利用されている。カッターで
縦・横に切込みをいれて排口状に配列された複数個の薄
膜を形成し、その上に貼着した粘着テープを引剥がず際
に、粘着テープと共に剥離してくる前記排口の数量比率
によって薄膜の密着力を評価する。しかしこの方法は破
壊試験であり評価用の試料を製品に流用することはでき
ない。またカッターで縦・横の切込みをいれ、同じ大き
さを有する複数個の薄膜を形成するのに多くの作業時間
と熟練をa・要とする。
(11,) Prior Art and Problems A method called cross-cut resistance evaluation is generally used to evaluate the adhesion of thin films. Cut vertically and horizontally with a cutter to form a plurality of thin films arranged in the shape of an outlet, and when the adhesive tape stuck thereon is not peeled off, the outlet peels off along with the adhesive tape. The adhesion of the thin film is evaluated by the quantity ratio of . However, this method is a destructive test, and evaluation samples cannot be used for production. Further, it takes a lot of time and skill to make vertical and horizontal cuts with a cutter and form a plurality of thin films having the same size.

この耐クロスカット性評価を簡略化した方法として、同
じ大きさを有する複数個の薄膜を形成する工程を省略し
、貼着した粘着テープを引剥がす作業を数回繰り返し、
その際に粘着テープと共に剥離してくる薄膜の状態を観
察して薄膜の密着力を評価する方法がある。この方法は
前述の耐クロスカット性評価はど厳密な評価はできない
が、耐クロスカット性評価との相関性が認められ、この
結果を許容限界として薄膜の密着力を評価することがで
きる。この方法によれば評価用の試料を製品に流用する
ことができ、しかも評価に要する作業時間はカッターで
縦・横に切込みをいれる時間だけ削減され熟練を必要と
しないという利点がある。しかしこの方法においても薄
膜の密着力を評価するための作業時間を必要とし、薄膜
の表面に傷を付りて歩留りを低下せしめるという問題か
あっ ノこ 。
As a simplified method for evaluating cross-cut resistance, the process of forming multiple thin films of the same size is omitted, and the process of peeling off the attached adhesive tape is repeated several times.
There is a method of evaluating the adhesion of the thin film by observing the state of the thin film that peels off together with the adhesive tape at that time. Although this method cannot strictly evaluate the cross-cut resistance described above, a correlation with the cross-cut resistance evaluation is recognized, and the adhesion of the thin film can be evaluated using this result as an acceptable limit. This method has the advantage that samples for evaluation can be used for products, and that the work time required for evaluation is reduced by the time required to make vertical and horizontal cuts with a cutter, and no skill is required. However, even with this method, it takes time to evaluate the adhesion of the thin film, and the problem is that the surface of the thin film may be damaged, reducing yield.

(d) 発明の目的 本発明の目的は評価用の試料も製品に流用でき、しかも
評価のために特別な作業時間を必要とせず、且つ誰にで
も容易に評価できる密着力の評価方法を提供することに
ある。
(d) Purpose of the invention The purpose of the present invention is to provide a method for evaluating adhesion that allows evaluation samples to be used in products, does not require special work time for evaluation, and can be easily evaluated by anyone. It's about doing.

(el 発明の構成 そしてこの目的は蒸着、スパッタリング、コーティング
等の方法で基板上に形成した薄膜面に、ビーム状に吐出
せしめた水を吹きつけ、該薄膜に剥離が生じる水圧の大
小によって薄膜の密着力を評価することで達成している
(el) The structure and purpose of the invention is to spray a beam of water onto the surface of a thin film formed on a substrate by a method such as vapor deposition, sputtering, coating, etc., and to separate the thin film by the magnitude of the water pressure that causes the thin film to peel. This is achieved by evaluating adhesion.

(「)発明の実施例 以下添付図により本発明の詳細な説明する。(“) Examples of the invention The present invention will be explained in detail below with reference to the accompanying drawings.

第1図および第2図は本発明の一実施例である。FIGS. 1 and 2 show an embodiment of the present invention.

第1図においてスピンドル1は回転テーフゝル2と回転
軸3よりなり、回転テーブル2の表面にはウェハー4を
真空吸着するだめの多数個の孔が開口しており、該孔の
他の端は回転テーブル2の中で一つにまとまり、回転軸
3の中心部を通って図示してない真空装置に接続されて
いる。一方ビーム状の高圧水5を吐出するノズル6は、
ウェハー4の面との間に角度αを保ち、且つ矢印7の範
囲を走査し得る図示1てない機構部に固定されている。
In FIG. 1, a spindle 1 consists of a rotary table 2 and a rotary shaft 3, and the surface of the rotary table 2 has a number of holes for vacuum suctioning the wafer 4, and the other end of the hole is opened. are integrated in the rotary table 2, and are connected to a vacuum device (not shown) through the center of the rotary shaft 3. On the other hand, the nozzle 6 that discharges the beam-shaped high-pressure water 5 is
It is fixed to a mechanical part (not shown) that can maintain an angle α with the surface of the wafer 4 and scan the range indicated by the arrow 7.

上記設備による薄膜密着力の評価は第2図の如(ウェハ
ー4を取付けたスピンドル1を回転せ、しめ、これにノ
ズル6から吐出するビーム状め高圧水5を吹き付けなが
らウェハー4の端から端まで士数回走査する。走査終了
後は高圧水5の吐出停止、スピンドル1の回転高速化に
よるウエハ−4の水切り、スピンドル1の停止等の工程
を経た後、スピンドル1からウェハー4を取外し薄膜の
剥離状態を観察する。この作業はウエハ−4の製造工程
における洗浄工程を兼ねており、この作業を取り入れた
場合は洗浄工程を省略しても良い。
The evaluation of the thin film adhesion using the above equipment is as shown in Figure 2 (the spindle 1 to which the wafer 4 is attached is rotated and tightened, and a beam of high-pressure water 5 discharged from the nozzle 6 is sprayed from one end of the wafer 4 to the other. After completing the scanning, the wafer 4 is removed from the spindle 1 and the wafer 4 is removed from the spindle 1 to remove the thin film. This operation also serves as a cleaning step in the manufacturing process of wafer 4, and if this operation is incorporated, the cleaning step may be omitted.

第3図はウェハー上のチップ形成範囲を示す図である。FIG. 3 is a diagram showing a chip forming area on a wafer.

ウェハー4の表面でチ・ノブを形成する範囲8は最も外
側でもウェハー4の外周から5mm以上ある。ウェハー
の上に形成された薄膜の剥離は外周から始まり、密着力
が小さい程内部まで剥離することが経験的に知られてい
る。したがって薄膜の剥離がチップ形成範囲8にまで到
達しない範囲、即ちウェハーの外周から5mm以内に許
容限界を設定すれば良い。
The area 8 forming the chi knob on the surface of the wafer 4 is at least 5 mm from the outer periphery of the wafer 4 at the outermost point. It is empirically known that peeling of a thin film formed on a wafer starts from the outer periphery, and the smaller the adhesion strength, the further the peeling goes to the inside. Therefore, the permissible limit may be set within a range in which peeling of the thin film does not reach the chip forming area 8, that is, within 5 mm from the outer circumference of the wafer.

第4図は5種類のウェハーに対して上記評価を行った際
のデータの一例である。
FIG. 4 shows an example of data obtained when the above evaluation was performed on five types of wafers.

500回転/毎分で回転するウェハーに対してウェハー
の面と60度の角度をなし、且つ直径0.1mmの孔を
有するノズルから高圧水を吐出せしめ、1回/2秒の速
さで走査を行いながら30秒間高圧水を吹き付け、薄膜
の剥離がウェハー4の外周から2mmおよび5mmの位
置に達するときの高圧水の圧力を表しており、実線が2
〜5mmの、破線が5mm以上の場合の圧力を示す。
High-pressure water is discharged from a nozzle that forms a 60 degree angle with the wafer surface and has a hole with a diameter of 0.1 mm to the wafer, which rotates at 500 revolutions/minute, and scans at a rate of 1 time/2 seconds. The solid line represents the pressure of high-pressure water when the thin film reaches positions 2 mm and 5 mm from the outer periphery of the wafer 4.
~5 mm, the dashed line indicates the pressure when it is 5 mm or more.

第5図は同様に5種類のウェハーに対して、同し大きさ
を有する複数個の薄膜を形成する工程を省略し貼着した
粘着テープを引剥がず作業を数回繰り返し、その際に粘
着テープと共に剥離してくる薄膜の状態を観察して薄膜
の密着力を評価する方法でおこなった評価の一例である
Figure 5 similarly shows that on five types of wafers, the process of forming multiple thin films of the same size is omitted, and the process is repeated several times without peeling off the adhesive tape. This is an example of an evaluation conducted by observing the state of the thin film peeling off together with the tape and evaluating the adhesion of the thin film.

第4図に置いて薄膜の剥離がウェハーの外周から2〜5
mmの位置に達するときの高圧水の圧力を表した図と第
5図は類似しており、ウェハーAはレベルが低く、その
他のウェハーはレベルが高い。
In Figure 4, the peeling of the thin film is 2 to 5 minutes from the outer periphery of the wafer.
The diagram showing the pressure of high-pressure water when reaching the mm position is similar to FIG. 5, with wafer A having a low level and the other wafers having high levels.

したがってその中間の圧力即ち25 kg / cJの
高圧水を薄膜に吹き付け、薄膜の剥離がウェハーの外周
から5mm未満であれば良、5mm以上になっていれば
不良として密着力の良・不良を判別することができる。
Therefore, high-pressure water at an intermediate pressure of 25 kg/cJ is sprayed onto the thin film, and if the thin film peels off less than 5 mm from the outer circumference of the wafer, it is considered good, and if it is 5 mm or more, it is judged as bad, and it is determined whether the adhesion is good or bad. can do.

(gl 発明の効果 以上述べたように本発明によれば評価用の試料も製品に
流用でき、しかも評価のために特別な作業時間を必要と
せず、且つ誰にでも容易に評価できる密着力の評価方法
を提供することができる。
(gl Effects of the Invention As described above, according to the present invention, samples for evaluation can be used for products, and in addition, no special work time is required for evaluation, and adhesion strength can be easily evaluated by anyone. Evaluation methods can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は本発明の一実施例、第3図はウェ
ハー上のチップ形成範囲を示す図、第4図、第5図は試
験データの一例である。図において1はスピンドル、2
ば回転テーブル、3は回転軸、4はウェハー、5は高圧
水、6はノズル、αはノズルの角度を示す。
1 and 2 are examples of the present invention, FIG. 3 is a diagram showing a chip formation range on a wafer, and FIGS. 4 and 5 are examples of test data. In the figure, 1 is the spindle, 2
3 is a rotating table, 4 is a wafer, 5 is high pressure water, 6 is a nozzle, and α is the angle of the nozzle.

Claims (1)

【特許請求の範囲】[Claims] 蒸着、スパッタリング、コーティング等の方法で基板上
に形成したM膜面に、ビーム状に吐出せしめた水を吹き
つけ、該薄膜に剥離が生じる水圧の大小によって評価す
る薄膜密着力評価方法。
A thin film adhesion evaluation method in which a beam of water is sprayed onto the surface of an M film formed on a substrate by a method such as vapor deposition, sputtering, coating, etc., and evaluation is performed based on the magnitude of the water pressure that causes the thin film to peel.
JP13827983A 1983-07-28 1983-07-28 Evaluating method of adhesion of thin-film Pending JPS6030148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13827983A JPS6030148A (en) 1983-07-28 1983-07-28 Evaluating method of adhesion of thin-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13827983A JPS6030148A (en) 1983-07-28 1983-07-28 Evaluating method of adhesion of thin-film

Publications (1)

Publication Number Publication Date
JPS6030148A true JPS6030148A (en) 1985-02-15

Family

ID=15218193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13827983A Pending JPS6030148A (en) 1983-07-28 1983-07-28 Evaluating method of adhesion of thin-film

Country Status (1)

Country Link
JP (1) JPS6030148A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020056842A (en) * 2018-09-28 2020-04-09 Hoya株式会社 Method for manufacturing spectacle lens with coat film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020056842A (en) * 2018-09-28 2020-04-09 Hoya株式会社 Method for manufacturing spectacle lens with coat film

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