JPS602680A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS602680A JPS602680A JP58109136A JP10913683A JPS602680A JP S602680 A JPS602680 A JP S602680A JP 58109136 A JP58109136 A JP 58109136A JP 10913683 A JP10913683 A JP 10913683A JP S602680 A JPS602680 A JP S602680A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- pattern
- substrate
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- 239000011259 mixed solution Substances 0.000 claims description 8
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KWMLJOLKUYYJFJ-UHFFFAOYSA-N 2,3,4,5,6,7-Hexahydroxyheptanoic acid Chemical compound OCC(O)C(O)C(O)C(O)C(O)C(O)=O KWMLJOLKUYYJFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002683 foot Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Abstract
Description
【発明の詳細な説明】
（技術分解）
この発明に基板上のＳｔもしくはＳｉｎ、の微細パター
ンを得ることができるＳｔもしくは５ｉｎ２のエツチン
グ法に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Analysis) The present invention relates to a St or 5in2 etching method that can obtain a fine pattern of St or Sin on a substrate.
（従来技術）
従来のＳｔもしく１ｑｓｔｏ、のエツチング！１ｓｉ０
２上に７オトレジストを塗布し、所要のパターンをフォ
トレジストで形成し、フッ酸と硝酸との混合液もしくは
フッ酸とフッ化アンモニウムとの混合液でエツチングを
行うが、ＳｉもしくはＳｉＯ□に対し、たとえばＡＺ系
フォトレジストのようなポジ型のフォトレジストは付着
力が弱く、エツチング中にフォトレジストが剥離してし
まうという欠点がある。(Prior art) Conventional etching of St or 1qsto! 1si0
7 photoresist is applied on 2, a desired pattern is formed with the photoresist, and etching is performed with a mixed solution of hydrofluoric acid and nitric acid or a mixed solution of hydrofluoric acid and ammonium fluoride. For example, a positive type photoresist such as an AZ-based photoresist has a weak adhesion and has the disadvantage that the photoresist peels off during etching.
この、ボッ型のフォトレジストヲ使用する場合は接着助
剤を塗布した後、ボッ型のフォトレジストを塗布すると
いうように塗布工程が増え、また厚みも増すため分解能
が悪くなるという欠点がある。When using this open-shaped photoresist, there are disadvantages in that the coating process is increased, such as applying the adhesive aid and then the open-shaped photoresist, and the thickness is also increased, resulting in poor resolution.
そこで、ＳｔもしくはＳｉｎ、に対する付着力が優れた
ネガ型のフォトレジストが広く使用さ几ているが、ボン
型の７オトレソストと比べて分解能が悪く、またエツチ
ング後のレジスト除去がポジ型のフォトレジストのよう
にアセトンなどの有機溶剤で除去できないという欠点が
あった。Therefore, negative-type photoresists, which have excellent adhesion to St or Sin, are widely used, but they have lower resolution than Bonn-type 7-tone photoresists, and are difficult to remove after etching compared to positive-type photoresists. However, it has the disadvantage that it cannot be removed with organic solvents such as acetone.
（発明の目的）
この発明は上記従来の欠点を除去するためになさルたも
ので、ホ） ＩＪソ工程が容易でかつ微細パターンが形
成できるとともに、絶縁基板上に多数のＴＦＴ回路を形
成するときに利用できるエツチング方法を提供すること
を目的とする。(Objective of the Invention) The present invention was made to eliminate the above-mentioned drawbacks of the conventional technology. The purpose is to provide an etching method that can be used in some cases.
（発明の構成）
この発明のエツチング方法は、基板上に形成さｉｔたＳ
ｉあるいニＳｉｏ２層上にＩｎ、Ｏ，とＳｎＯ２の混合
膜を形成し、ホトリソエツチング法によシこのＩｎ２Ｏ
３とＳｎｕｇの混合膜を所定のパターンに形成した後フ
ッ酸と硝酸の混合液もしくはフッ酸とフッ化アンモニウ
ムの混合液でＳｉもしくＵＳｉＯ２のエツチングを行う
ようにしたものである。(Structure of the Invention) The etching method of the present invention provides an etching method for etching S formed on a substrate.
A mixed film of In, O, and SnO2 is formed on the i or d Sio2 layer, and this In2O is formed by photolithography.
After forming a mixed film of No. 3 and Snug into a predetermined pattern, Si or USiO2 is etched with a mixed solution of hydrofluoric acid and nitric acid or a mixed solution of hydrofluoric acid and ammonium fluoride.
（実施例）
以下、この発明のエツチング方法の実施例について図面
に基づき説明する。第１図（ａ）ないし第１図（ｅ）は
それぞれその一実施例の工程説明図である。(Example) Hereinafter, an example of the etching method of the present invention will be described based on the drawings. FIG. 1(a) to FIG. 1(e) are process explanatory diagrams of one embodiment.
まず、第１図（ａ）に示すごとく基板１上に形成された
ＳｔまたはＳｉＯ２膜２上にＩｎ２Ｏ，とＳｎＯ，の混
合膜（以後ＩＴＯと呼ぶ）３を膜厚略５００Ａ〜略３０
００＾の厚さに電子ビーム蒸着法またはス／やツタ法で
形成し、このＩＴＯ膜３上に第１図６）に示すととくポ
ー／ｙ型フオトレソストヲ数１０００＾〜略２μｍの膜
厚に塗布し、露光、現像を行ってレジストパターン４を
形成する。First, as shown in FIG. 1(a), a mixed film of In2O and SnO (hereinafter referred to as ITO) 3 is deposited on a St or SiO2 film 2 formed on a substrate 1 with a film thickness of about 500A to about 30A.
On this ITO film 3, as shown in FIG. A resist pattern 4 is formed by coating, exposing, and developing.
ＩＴＯｉａ上にはＡＺ系フォトレジストなどは容易に塗
布できる。途布法はスピンナ、あるいはロールコータな
ど一般的に普及した方法でよい。AZ-based photoresist or the like can be easily coated on ITOia. The spreading method may be a commonly used method such as a spinner or a roll coater.
レジストパターン４が形成できたら、次にＩＴＯＴａＯ
２ツチングし、第１図（ｅ）に示すごとくレジストパタ
ーン４．！：ＩＴＯ膜３のパターンを形成する。After resist pattern 4 is formed, next ITOTaO
2. Then, resist pattern 4. is formed as shown in FIG. 1(e). ! : Forming a pattern of the ITO film 3.
このＩＴＯＴａＯ２ツチングはＦｅｃＡ３Ｈｃｔの混合
液をほぼ４０℃に加熱して行うとほぼ５００人／分のエ
ツチング速度でエツチングできる。ＩＴＯＴａＯ２明で
あるため、エツチング状態を観察しながらのエツチング
は難しいから、エツチング時間によυエツチングを制御
する。ＨｃＬのみのエッチ液ではエツチング速度が速す
ぎるため時間によるエツチング制御は難しい。When this ITOTaO2 etching is carried out by heating the FecA3Hct mixture to approximately 40 DEG C., etching can be performed at an etching rate of approximately 500 people/min. Because ITOTaO2 is bright, it is difficult to perform etching while observing the etching state, so etching is controlled by the etching time. With an etchant containing only HcL, the etching rate is too fast, making it difficult to control etching by time.
ＩＴＯＴａＯ２る所要のパターンを形成したら、次に第
１図（ｄ）に示すごとく、レジストパターン４を除去し
、Ｓｉまたは５ＩＯ２ｆｒエツチングする。ボッ型フォ
トレジスト４の除去はネガ型と比べて非常に容易で専用
リムーバを略８０℃に加熱して使用するとよいが、特に
ＡＺ系レジストの場合はアセトンで容易に除去できる。After forming a desired pattern of ITOTaO2, the resist pattern 4 is removed and Si or 5IO2fr etching is performed, as shown in FIG. 1(d). Removal of the bot-type photoresist 4 is much easier than that of the negative-type photoresist, and it is recommended to use a special remover heated to about 80° C., but AZ-type resist in particular can be easily removed with acetone.
Ｓｉのエツチング液として、７ツ酸と硝酸の混合液に希
釈剤として酢酸を混ぜた溶液を使用するとＳｉの結晶方
位依存が無視できる。Ｓｉｎ、、のエツチング液はフッ
酸またはフッ酸とフッ化アンモニウム水溶液の混合液を
用いる。When a solution containing acetic acid as a diluent in a mixed solution of heptonic acid and nitric acid is used as an etching solution for Si, the dependence on the crystal orientation of Si can be ignored. As the etching solution for Sin, ., hydrofluoric acid or a mixed solution of hydrofluoric acid and an aqueous ammonium fluoride solution is used.
ところが、ＩＴＯＴａＯ２ッ酸、硝酸、酢酸、フッ化ア
ンモニウム水溶液およびこれらの混合液に対し反応は起
らず、したがってエツチングされない。ＳｔまたはＳｉ
ｎ、のエツチングが終ると第１図（ｅ）に示すごとく、
ＩＴＯ膜３’ｔ ＨｃｔあるいはＨｃＬとＦｅｃｔ３の
混合液でエツチングし、基板１上に所要のパターンにノ
臂ターニングされたＳｔまたは５ｉｎ２膜２が残る。Ｓ
ｉおよび５ｉＯ１はＨｅＡ 、 Ｆｅａｔｓおよびこれ
らの混合液ではエツチングさｎない。However, no reaction occurs with ITOTaO2 fluoric acid, nitric acid, acetic acid, ammonium fluoride aqueous solution, or a mixture thereof, and therefore no etching occurs. St or Si
After etching of n, as shown in Fig. 1(e),
The ITO film 3't is etched with a mixed solution of Hct or HcL and Fect3, and the St or 5in2 film 2 remains on the substrate 1 with the corners turned into a desired pattern. S
i and 5iO1 are not etched by HeA, Feats, or a mixture thereof.
第１図（ｄ）において、Ｓｌまたは５ｉ０２のエツチン
グ前にレジスト４を除去したが、エツチング後に除去し
てもＳｉまたは５ｉｎ２のエツチングには何ら問題は生
じない。In FIG. 1(d), the resist 4 was removed before etching Sl or 5i02, but even if it is removed after etching, no problem will occur when etching Si or 5in2.
なお、ＩＴＯＴａＯ２１膜あるいは５ｉｎ２に対し、付
着性はよく、またＩＴＯＴａＯ２し、ボッ型フォトレジ
ストの付着性はよいので、エツチング中に剥離するとい
うト、ラブルは生じない。It should be noted that it has good adhesion to the ITOTaO2 film or 5in2 film, and since the adhesion of the ITOTaO2 and bot-type photoresist is good, there will be no problem of peeling off during etching.
以上説明したように、上記実施例では、Ｓｌまた［８１
０２のエツチングマスクとしてＩ’ｌ’Ｏｉ３’に使用
しているため、ホトリソエツチング工程はボッ型フォト
レジストで行えるため、微細ｉＲパターン得られ、かつ
レジストの除去が容易であるという利点がある。As explained above, in the above embodiment, Sl or [81
Since I'l'Oi3' is used as an etching mask for No. 02, the photolithography process can be performed using a bottom photoresist, which has the advantage that a fine iR pattern can be obtained and the resist can be easily removed.
また、多層膜の最上膜のＳｉまたｔｍｓｉ０２膜のエツ
チングを行うとき、下層膜の状態を観察しながらエツチ
ングを行いたい場合などＩＴＯＴａＯ２明であるため、
可能であるという利点がある。In addition, when etching the topmost Si or tmsi02 film of a multilayer film, it is preferable to perform etching while observing the condition of the underlying film, since ITOTaO2 is bright.
The advantage is that it is possible.
なお、ＩＴＯＴａＯ２りに５ｎ０２またｕ Ｉｎ１０３
を用いてもよい。In addition, ITOTaO2 5n02 and u In103
may also be used.
（発明の効果）
以上のように、この発明のエツチング方法によれば、基
板上に形成されたＳｉまたはＳｉＯ２膜上にＩｎ２Ｏ３
とＳｎＯ２の混合膜を形成し、ホトリソエツチング法に
よりこのＩｎ２Ｏ，と５ｎ０３の混合膜を所定のノリー
ンに形成した後、フッ酸と硝酸の混合液もしくはフッ酸
とフッ化アンモニウムの混合液でＳｔもしくは５ｉｎ２
のエツチングを行うようにしたので、ホ） ＩＪソ工程
が容易でかつ微細パターンが形成できるとともに絶縁基
板上に多数のＴＰＴ回路を形成するときに利用できる。(Effects of the Invention) As described above, according to the etching method of the present invention, In2O3 is etched on the Si or SiO2 film formed on the substrate.
After forming a mixed film of In2O and 5n03 to a predetermined thickness by photolithography, St. Or 5in2
Since etching is performed, e) the IJ etching process is easy and fine patterns can be formed, and it can be used when forming a large number of TPT circuits on an insulating substrate.
第１図（ａ）ないし第１図（ｃ）はそれぞれこの発明の
エツチング方法の一実施例の工程説明図である。
１・・・基板、２・・・Ｓｌ″！、たはＳｉｎ、膜、３
・・・ＩＴＯ膜、４・・・レジストパターン。
第１Ｅ
手続補正書（方式）
％式％
エツチング方法
３、補正をする者
事件との関係 特許 出願人
（０２９）沖電気工業株式会社
４、代理人 イ
５、補正命令の日付 昭和５８年９月２７日（発送日）
［６、補正の対象 （
明細書の図面の簡単な説明の欄
７、補正の内容
吻ヒ緋呵〒通−一
（１）明細書７頁１１行「第、１４図（Ｃ）」を「第１
図手続補正書
昭和５３年１１月１１日
子許庁長官若杉和夫殿
、事件の表示
昭和５８年 特 許 願第１０９１３６ 号ｉ１発明の
名称
エツチング方法
）、補正をする者
事件との関係 特 許 出願人
（０２９）沖電気工業株式会社
［１代理人
５、補正命令の日付 昭和 年 月 日 （自発）５、
補正の対象
明細１の発明の詳細な説明の欄
乙補正の内容
別紙の通り
７ 補正の内容
１）明細１４頁１０行ｒ Ｆｅｃｔ３ＨｃｔＪ ’ｋ
ｒ ＦｅＣｔｓとＨＣｌＪと訂正する。
２）同４頁１５行「ＨＣｔＪをｒＨｃｔＪと訂正する。
３）同５頁１４行および１５行ｒ ＨｃｔあるいはＨｃ
ｌとＦｅｅｔｓ Ｊ ｆ ｒ ＨＣＩＪ’＞るいはＨＣ
ｌとにｔ３ゴと訂正する。
４）同５頁１７行ｒ ｌ−１ｃｔ、 ＦｅＣ１３Ｊ ｋ
ｒ ＨＣＬ 。
ＦｅＣ１３Ｊと訂正する。
４３６−FIGS. 1(a) to 1(c) are process explanatory diagrams of one embodiment of the etching method of the present invention, respectively. 1...Substrate, 2...Sl''!, or Sin, film, 3
...ITO film, 4...resist pattern. Part 1E Procedural amendment (method) % formula % etching method 3, relationship with the case of the person making the amendment Patent Applicant (029) Oki Electric Industry Co., Ltd. 4, Agent A 5, Date of amendment order September 1982 27th (shipping date)
[6. Subject of amendment (Brief explanation of drawings column 7 of the specification, contents of amendment) (1) Changed "Figure 14 (C)" to page 7, line 11 of the specification as " 1st
Amendment to Figure Procedures November 11, 1973 Mr. Kazuo Wakasugi, Director-General of the Japan Patent Office, Indication of the Case 1988 Patent Application No. 109136 (i1 Name Etching Method of Invention), Person Making the Amendment Relationship with the Case Patent Applicant (029) Oki Electric Industry Co., Ltd. [1 agent 5, date of amendment order Showa year month day (self-motivated) 5,
Detailed explanation of the invention in Specification 1 subject to amendment B Contents of amendment As shown in Attachment 7 Contents of amendment 1) Details page 14, line 10r Fect3HctJ 'k
Correct as r FeCts and HClJ. 2) Page 4, line 15 “Correct HCtJ to rHctJ. 3) Page 5, lines 14 and 15 r Hct or Hc
l and Feets J f r HCIJ'> Rui HC
Correct it to t3go. 4) Same page 5 line 17 r l-1ct, FeC13J k
rHCL. Corrected to FeC13J. 436-
Claims (1)
Ｏ。 とＳ ｎｏ２の混合膜を形成し、ホトリソエツチング法
によシこのＩｎ２Ｏ，と５ｎ０２の混合膜を所要のパタ
ーンに形成した後、フッ酸と硝酸の混合液もしくはフッ
酸とフッ化アンモニウムの混合液でＳｉもしくはＳｉＯ
２のエツチングを行うことを特徴とするエツチング方法
。[Claims] St or Sin formed on a substrate, In2 formed on a layer
O. After forming a mixed film of In2O and 5n02 into a desired pattern by photolithography, a mixed solution of hydrofluoric acid and nitric acid or a mixture of hydrofluoric acid and ammonium fluoride is used. Si or SiO as a liquid
An etching method characterized by performing the etching described in step 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109136A JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109136A JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS602680A true JPS602680A (en) | 1985-01-08 |
| JPS6217031B2 JPS6217031B2 (en) | 1987-04-15 |
Family
ID=14502496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58109136A Granted JPS602680A (en) | 1983-06-20 | 1983-06-20 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS602680A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6134695A (en) * | 1996-08-07 | 2000-10-17 | Olympus Optical Co., Ltd. | Code image data output apparatus and method |
-
1983
- 1983-06-20 JP JP58109136A patent/JPS602680A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6134695A (en) * | 1996-08-07 | 2000-10-17 | Olympus Optical Co., Ltd. | Code image data output apparatus and method |
| US6298460B1 (en) | 1996-08-07 | 2001-10-02 | Olympus Optical Co., Ltd. | Code image data output apparatus and method |
| US6574765B2 (en) | 1996-08-07 | 2003-06-03 | Olympus Optical Co., Ltd. | Code image data output apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217031B2 (en) | 1987-04-15 |
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