JPS602664A - Device for producing thin film - Google Patents

Abstract

PURPOSE:To form single-layered parts of sputtered layers and to enable the inspection of the characteristics of each single layer in the stage of forming the plural sputtered layers on a film which is wound on a cylindrical can and is moved in a vacuum vessel by placing a mask on the film and moving the same. CONSTITUTION:Fe is first evaporated from a source 12 of a thin film material and is deposited by evaporation on a high polymer film 5 which moves on a cooling can 7 in a vacuum vessel 3. Said film is taken up on a take-up roller 8. The roller is then attached to a delivery roll 4 and while the film is again transferred on the film 7, a thin film 70 of a Co-Ni alloy, etc. is deposited by evaporation on the thin film 30 of Fe. The position of the aperture 20 of a mask 9 provided between the film 5 and the source 12 is shifted toward the transverse direction of the film in this case. The thin film part 30 of the Fe alone and the thin film part 70 of the Co-Ni alloy alone are formed on the film 5 and the discrete inspection of the characteristics of the respective thin films is made possible.

Description

[Detailed Description of the Invention] Industrial Application Field The present invention relates to magnetic tapes and sheets manufactured in vacuum.
Alternatively, the present invention relates to a thin film manufacturing apparatus used for manufacturing multilayer thin films for electronic materials on ceramic substrates.

Conventional Structures and Their Problems 21°-2 In recent years, with the demand for improved magnetic recording density, thin films of metals and alloys have been manufactured in vacuum and used as recording media. In this case, methods such as vapor deposition or sputtering are used to laminate multiple layers of different materials in a vacuum chamber, and this method is useful for continuous production. However, it is difficult to investigate the characteristics (film thickness, electrical, crystalline, magnetic properties) of only one specific type of thin film in a multilayered thin film because it is extremely difficult to distinguish it from other thin film layers. Ta. Furthermore, even if they could be distinguished, the properties of the thin film as a single substance would be lost, making it inconvenient for purposes such as investigating manufacturing conditions.

FIG. 1 shows an outline of a conventional continuous sputtering apparatus.

In the figure, the vacuum chamber 3 is maintained at an appropriate vacuum level by the rotary pump 1 and the diffusion pump 2, and the polymer film 6 prepared on the delivery roll 4 is moved in the direction of the arrow 11 via the guide rollers 6, 6' and the cooling can 7. Rolling roller 8
It's going to be taken up. At this time, the thin film material source 12 is laminated on the polymer film 5 by sputtering or vapor deposition to form a thin film 6'. A mask 9 is installed to prevent the thin film from adhering to unnecessary areas. The effect of this mask 9 will be explained using FIG. 2. Thin film material source 1
FIG. 2 is a view of the polymer film 5 viewed from the side 2. An opening 1o is provided in the center of the mask 9, and the polymer film 6 flows on the back side of the opening 1o from the side a to the direction a'. .

The thin film material that has passed through the opening 1o is laminated on the polymer film 6, forming a thin film layer 60, and flows out to the side a'.
The width of the thin film layer 600 is equal to the width of the opening 1o, and is also located symmetrically with respect to the center line aa' of the polymer film 5.

In this state, the second Even when the third thin film is sequentially sputtered, the resulting laminated film does not change from the position of the thin film layer 6o, and there is no place where a single thin film layer is exposed on the polymer film 6.

Therefore, it is impossible to investigate the properties of the thin film as a single substance, and it is inconvenient to investigate the conditions during manufacturing. The object of the present invention is to provide a thin film manufacturing apparatus that allows the characteristics of any single thin film in a multilayer thin film to be inspected at any location.

Structure of the Invention The present invention achieves the above object, and includes a cylindrical can around which a film medium is wound in a vacuum chamber, and at least one evaporation source provided opposite to the can. A mask having an opening is installed between the evaporation source and the mask 9, and the relative position of the opening and the film medium is made different when each thin film is formed.

DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. The basic configuration of this embodiment is shown in FIG. 1, and its mask portion is unique.

The first embodiment of the present invention will be explained using FIGS. 1, 3, and 41. The experiment was carried out using an apparatus having the shape shown in Fig. 1, and a polyester having a thickness of 50 μm and a width of 6 tons and 400 mm was applied to the sample base film 5 using a feeding roll 4.
It was installed at a distance of approximately 20 m. A mask 9 having the shape shown in FIG. 3 was used during sputtering. The feature of this mask is that the outer edge 4 of the mask 9 is
1 and 42 are at equal distances, but the upper end 21 of the opening 20
compared to the distance between the lower end 22 and the center line aa'
The reason is that the distance between -a' is hidden (of course, the reverse is also possible). That is, the length of the opening 2o in the width direction of the film 6 is 340 m, and the width from the film center line aa' to the upper end 21 of the opening is 180 Nn.
s The distance to the lower end 22 was set to 16.0 mm. That is, the position of the opening 5, which is 340 m in length in the width direction, is shifted by 10 rran from the center of the film to one end. Using this apparatus, iron was sputtered to a thickness of about 0.1 μm as the first layer of thin film material. In FIG. 3, the thin film was laminated at a position corresponding to 3°, traveled in the / direction, and was wound up on the winding roll 8 of FIG. Next, the roll of the take-up roll 8 is removed and placed on the delivery roll 4 again so that sputtering is performed on the surface on which the iron thin film 30 is formed. Layer thin film C6--N
i alloy was made with a thickness of 0.2 μm. At this time, the film is turned upside down compared to when the iron thin film was formed.

FIG. 4 shows the position of the sputtered film on the film at this time. The thin iron film 3o laminated in advance runs from the direction a to the direction a'. The second layer CoN i thin film 70 is laminated on the film 6 through the entire opening 2o. At this time,
The distance between the top edge 11 of the film and the top edge 71 of the CoNi film is 20
I don't have any thin films stacked on trrm. CoNi film 7o
The distance between the upper terminal 1 and the upper end 31 of the first layer iron thin film 3o is 20 m, and only a single layer of CoNi is laminated in this portion. The distance between the upper end 31 of the first layer iron thin film 30 and the lower end 72 of the second layer CONi film 7° was 320 mm, and the intended two-layer structure of the electronic material was obtained. Also, the second
The lower end 72 of the Co Ni film 70 of the layer and the iron thin film 3 of the first layer
A single iron thin film layer with a width of 20 ths was also obtained between the lower end 32 of 0.

A configuration diagram of a mask according to a second embodiment of the present invention is shown in 7
Baku Figure 6 is shown.

In this embodiment, a case will be described in which a two-layer thin film is created in the same manner as in the first embodiment.

The feature of this embodiment is that a mask 19 for the first iron thin film layer and a mask 29 for the second CoNi thin film layer are placed in a sputtering tank so as to face two evaporation sources, respectively. . The opening 6° of the mask 19 and the opening 61 of the mask 29 were arranged at positions shifted from each other with respect to the center line a-a' of the film 5. As a result, the first iron thin film 3
0 and the second CoNi thin film 70 overlap the iron thin film 3.
The single iron thin film layer is formed between the upper end 31 of the CoNi thin film 70 and the lower end 72 of the CoNi thin film 70.
and the lower end 32 of the iron thin film 30, and a single C
The oNi thin film layer is formed between the upper end 71 of the CoNi thin film 7o and the iron thin film 3.
It was obtained between the upper end of 0 and 31. Since the two sputter guns operated simultaneously, a two-layer film and each single-layer film were obtained in one film run.

FIG. 6 shows the structure of a mask according to a third embodiment of the present invention.

A feature of this embodiment is that the width of the opening is intentionally changed.

As shown in the figure, a mask 9 can be formed on a film 6 over time, and conditions for obtaining a good multilayer film can be obtained over time.

Although the configuration of the present invention has been described by installing a mask with a fixed opening, a similar effect can be produced by intentionally changing the width of the opening. This effect will be explained using FIG. 6. A thin film is laminated onto the film 1 through the opening 2o of the mask 2, and at least one end 2 of the opening 20
The part 2 is covered with a movable shutter 80. In this case, by using the shutter 80, the lower end 22 of the opening 2o is changed to the upper end 81 of the shutter 8o, which is substantially equivalent to shifting the opening 20 of the mask 9, and the lower end 22 of the opening 2o is changed to the upper end 81 of the shutter 8o. The same effect will be produced. Of course, it is also possible to consider a method in which this movable shutter 80 is installed at the upper end of the mask opening 2o or at both upper and lower ends, or by arranging two or three of these masks in the same vacuum chamber. .

Although the above embodiments have been described mainly in the case of a sputtering apparatus, the present invention is not limited thereto, and can also be applied to other thin film manufacturing apparatuses such as vacuum evaporation and ion blating.

Effects of the Invention As described above, the present invention includes a cylindrical can around which a film medium is wound in a vacuum chamber, and at least one evaporation source provided opposite to the can, and a connection between the can and the evaporation source. A thin film manufacturing apparatus is used, in which a mask having an opening is installed between the two, and the relative position of the opening and the film medium is made different when forming each thin film. It has the advantage that characteristics can be inspected at any location.

[Brief explanation of drawings]

Figure 1 is a schematic diagram of a thin film manufacturing apparatus for continuous thin film production;
Fig. 2 is a plan view of a conventional mask, and Fig. 3 is a plan view of a conventional mask.
The figure on page 410 is a plan view showing a state in which the first layer of thin film is further laminated using a mask in the first embodiment. , FIG. 6, and FIG. 6 are plan views showing the structure of a mask according to another embodiment of the present invention. 1... Rotary pump, 2... Anti-dispersion pump, 3... Vacuum chamber, 4... Delivery roll, 5... Film, 6.6'...
... Kite Roll, 7... Cooling Can,
8... Winding reload/l/, 9, 19.29...
...shielding mask, 12... thin film material source,
10゜20.60,6ff・・・Opening part, 3o・
...First thin film layer, 70... Second thin film layer, 8o... Movable shielding plate. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
Figure 6 of the diagram

Claims (1)

[Claims] A cylindrical can for wrapping a film medium inside a vacuum chamber,
at least one evaporation source provided opposite to the can, and a mask having an opening between the can and the evaporation source, through which the film is exposed onto the film medium. When forming a multi-layer thin film,
A thin film manufacturing apparatus characterized in that the relative position of the mask opening with respect to the film medium is made different when forming each thin film.