JPS60262481A - Optical feedback type semiconductor laser device - Google Patents
Optical feedback type semiconductor laser deviceInfo
- Publication number
- JPS60262481A JPS60262481A JP59118461A JP11846184A JPS60262481A JP S60262481 A JPS60262481 A JP S60262481A JP 59118461 A JP59118461 A JP 59118461A JP 11846184 A JP11846184 A JP 11846184A JP S60262481 A JPS60262481 A JP S60262481A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- optical
- reflected
- laser element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光フアイバ通信用光源として用いることがで
きる半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser device that can be used as a light source for optical fiber communications.
従来例の構成とその問題点
半導体レーザを光通信用光源として用いる際には、半導
体レーザは単−縦モード発振していることが望ましい。Conventional Structure and Problems When using a semiconductor laser as a light source for optical communication, it is desirable that the semiconductor laser oscillate in a single longitudinal mode.
しかし、半導体レーザ単体では完全な単−縦モード発振
を実現するのは困難であり、数本のサブモードが同時に
発振していることが多い。さらに、光ファイバと結合し
た場合には、半導体レーザからの出射光の一部が光フア
イバ端面からの反射により半導体レーザへ帰還し、半導
体レーザ素子の雑音増加、縦モードスペクトルの変化を
誘起され、半導体レーザ装置の安定化、高品質化の一つ
の障害となっている0
これを解決する一つの方法として、第1図に示すような
半導体レーザ素子への帰還光を積極的に利用したいわゆ
る複合共振器構成の半導体レーザ装置がある。半導体レ
ーザ素子1の共振器端面2から出射したレーザ光3はレ
ンズ4を通過し1反3ベーノ
射体5により反射され、反射光6は再びレンズ4を通過
し、半導体レーザ素子1に入射する。他方の共振器端面
7から出射しだレーザ光8は、光ファイバ9に結合され
る。However, it is difficult to achieve complete single-longitudinal mode oscillation with a single semiconductor laser, and several submodes often oscillate simultaneously. Furthermore, when coupled with an optical fiber, a part of the emitted light from the semiconductor laser is reflected from the end face of the optical fiber and returns to the semiconductor laser, causing an increase in noise in the semiconductor laser element and a change in the longitudinal mode spectrum. This is one of the obstacles to stabilizing and improving the quality of semiconductor laser devices.One way to solve this problem is to use a so-called complex system that actively utilizes the feedback light to the semiconductor laser element, as shown in Figure 1. There is a semiconductor laser device with a resonator configuration. Laser light 3 emitted from the cavity end face 2 of the semiconductor laser device 1 passes through the lens 4 and is reflected by the 1/3 Beno projector 5, and the reflected light 6 passes through the lens 4 again and enters the semiconductor laser device 1. . Laser light 8 emitted from the other resonator end face 7 is coupled to optical fiber 9 .
このような構成では、光帰還によって反射雑音を抑圧し
、同時に完全な単−縦モード発振が可能となり、反射体
として回折格子を用いた場合には発振波長の選択も可能
となるが、周囲の環境、例えば温度変化等で光出力強度
の変動が大きい場合もあり、安定度の点で実用上問題が
あった。In such a configuration, reflection noise is suppressed by optical feedback, and at the same time complete single-longitudinal mode oscillation is possible.If a diffraction grating is used as a reflector, the oscillation wavelength can be selected; In some cases, the optical output intensity fluctuates greatly due to the environment, for example, temperature changes, which poses a practical problem in terms of stability.
発明の目的
本発明は、上記従来の問題点を解消するもので、光帰還
によって半導体レーザ素子の反射雑音を抑圧し、同時に
単−縦モード発振を図り、さらに電気的帰還によって光
出力の安定化を行い、光通信用光源に好適な半導体レー
ザ装置を供給することを目的とする。OBJECT OF THE INVENTION The present invention solves the above-mentioned conventional problems by suppressing reflection noise of a semiconductor laser element by optical feedback, simultaneously achieving single-longitudinal mode oscillation, and further stabilizing optical output by electrical feedback. The purpose is to provide a semiconductor laser device suitable for a light source for optical communications.
発明の構成
本発明は、半導体レーザ素子の一方の出力端面に対向し
て集束性光伝送体を配置し、前記集束性光伝送体の第1
の端面を前記半導体レーザ素子と結合させ、第2の端面
に反射機能を有する回折格子を有し、第2の端面により
反射及び回折させ、前記回折された正の一次回折光を前
記半導体レーザ素子に帰還し、前記反射あるいは回折さ
れた前記正の一次回折光以外の次数光を前記第1の端面
に配置された光検出器により受光し、前記受光出力によ
り前記半導体レーザ素子の駆動電源回路に電気的帰還を
施し、前記半導体レーザ素子の他方の出力端面からの出
射光を光ファイバと結合するものである。Structure of the Invention The present invention provides a first aspect of the present invention, in which a convergent light transmitting body is disposed opposite to one output end face of a semiconductor laser element, and a first convergent light transmitting body of the convergent light transmitting body
A second end face has a diffraction grating having a reflection function, and is reflected and diffracted by the second end face, and the diffracted positive first-order diffracted light is coupled to the semiconductor laser element. The reflected or diffracted light of orders other than the positive first-order diffracted light is received by a photodetector disposed on the first end surface, and the received light output is sent to a drive power supply circuit for the semiconductor laser element. Electrical feedback is applied to couple the light emitted from the other output end face of the semiconductor laser element with an optical fiber.
実施例の説明
以下に本発明の実施例を図面を参照して説明する。第2
図において、半導体レーザ素子10の出射端面11から
出射したレーザ光12は、中心軸13から周辺に向かっ
て除々に減少する屈折率分布をもった集束性光伝送体1
4に入射し、回折格 1子16により反射及び回折され
る。そして、正の一次回折光16は再び半導体レーザ素
子10に帰還され、反射された零次光17は光検出器1
8で5ペーノ
半導体レーザ出力モニタ光として検出されて電気信号1
9に変換され、光出力安定化制御回路2゜へ送られる。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. Second
In the figure, a laser beam 12 emitted from an emission end face 11 of a semiconductor laser element 10 is transmitted to a convergent optical transmission body 1 having a refractive index distribution that gradually decreases from a central axis 13 toward the periphery.
4 and is reflected and diffracted by the diffraction grating 16. Then, the positive first-order diffracted light 16 is returned to the semiconductor laser element 10 again, and the reflected zero-order light 17 is transmitted to the photodetector 1.
8, it is detected as 5 peno semiconductor laser output monitor light and electrical signal 1
9 and sent to the optical output stabilization control circuit 2°.
このようにすれば、回折格子15を外部共振器とした複
合共振器構成で、パワーサーボ機構を備えた半導体レー
ザ装置となり、反射雑音が抑圧され、同時に単−縦モー
ド発振が実現された上に、光出力の安定化が図られる。In this way, a semiconductor laser device with a composite resonator configuration using the diffraction grating 15 as an external resonator and a power servo mechanism is obtained, reflection noise is suppressed, and at the same time, single-longitudinal mode oscillation is realized. , the optical output is stabilized.
本実施例では、半導体レーザ出力モニタ光として零次光
を利用したが、正の一次回折光以外の次数光ならば、ど
の次数光を利用してもよく、回折格子方程式を満足する
ように、集束性光伝送体の第一の端面での半導体レーザ
素子の配置位置と、回折格子の配置角度を設定すること
により、モニタ光を選択することが可能となり、所望の
波長の光だけを帰還させて発振波長を選択することも可
能となる。In this example, zero-order light was used as the semiconductor laser output monitoring light, but any order light other than the positive first-order diffracted light may be used, and as long as it satisfies the diffraction grating equation, By setting the placement position of the semiconductor laser element on the first end face of the focusing optical transmission body and the placement angle of the diffraction grating, it is possible to select the monitor light, and only the light of the desired wavelength can be returned. It is also possible to select the oscillation wavelength by
発明の効果
以上のように本発明は、半導体レーザ素子への光帰還に
よって、反射雑音を抑圧し、同時に単−縦モード発振と
することができ、発振波長の選択67、
も可能となり、光検出器からの半導体レーザの駆動電源
への電気的帰還によって、光出力の安定化が可能となり
、また、集束性光伝送体に反射及び回折機能をもたせる
ことにより、半導体レーザ素子への帰還光と出力モニタ
光を同時に得ることができ、簡単な構成で光学的及び電
気的帰還を達成し、光通信用光源あるいは光フアイバセ
ンサー用光源等に用いる場合に極めて有利な光帰還型半
導体レーザ装置を実現できるものである。Effects of the Invention As described above, the present invention suppresses reflection noise and simultaneously achieves single-longitudinal mode oscillation by optical feedback to the semiconductor laser element, and also enables selection of the oscillation wavelength67, which enables optical detection. Electrical feedback from the device to the driving power source of the semiconductor laser makes it possible to stabilize the optical output, and by providing the focusing optical transmitter with reflection and diffraction functions, the feedback light to the semiconductor laser element and the output can be stabilized. Monitor light can be obtained simultaneously, optical and electrical feedback can be achieved with a simple configuration, and an optical feedback semiconductor laser device can be realized which is extremely advantageous when used as a light source for optical communications or a light source for optical fiber sensors. It is something.
第1図は従来の光帰還型半導体レーザ装置の概略断面図
、第2図は本発明の一実施例の光帰還型半導体レーザ装
置の概略構成図である。
1o・・・・・・半導体レーザ素子、11・・・・・・
レーザ光出射端面、12・・・・・・レーザ光、13・
・・・−・中心軸、14・・・・・・集束性光伝送体、
16・・・・・・回折格子、16・・・・・・−次回折
光、17・・・・・・反射零次光、18・・・・・・光
検出器、19・・・・・・電気信号、20・・・・・・
光出力安定化制御回路。FIG. 1 is a schematic cross-sectional view of a conventional optical feedback semiconductor laser device, and FIG. 2 is a schematic configuration diagram of an optical feedback semiconductor laser device according to an embodiment of the present invention. 1o... Semiconductor laser element, 11...
Laser light emitting end face, 12... Laser light, 13.
...--Central axis, 14... Focusing light transmission body,
16...Diffraction grating, 16...--order diffracted light, 17...Reflected zero-order light, 18...Photodetector, 19...・Electrical signal, 20...
Optical output stabilization control circuit.
Claims (1)
伝送体を配置し、前記集束性光伝送体の第1の端面を前
記半導体レーザ素子と結合させ、第2の端面に反射機能
を有する回折格子を有し、前記第1の端面から入射した
光を前記第2の端面により反射及び回折させ、前記回折
された正の一次回折光を前記半導体レーザ素子に帰還し
、前記反射あるいは回折された前記圧の一次回折光以外
の次数光を前記第1の端面に配置された光検出器により
受光し、前記受光出力により前記半導体レーザ素子の駆
動電源回路に電気的帰還を施し、前体レーザ装置。A focusing light transmitting body is arranged opposite to one emission end face of the semiconductor laser element, a first end face of the focusing light transmitting body is coupled to the semiconductor laser element, and a second end face has a reflection function. It has a diffraction grating, the light incident from the first end face is reflected and diffracted by the second end face, the diffracted positive first-order diffracted light is returned to the semiconductor laser element, and the reflected or diffracted light is reflected and diffracted by the second end face. The light of orders other than the first-order diffracted light of the pressure is received by a photodetector disposed on the first end surface, and the output of the received light is electrically fed back to the drive power circuit of the semiconductor laser element, and the front-body laser is Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59118461A JPS60262481A (en) | 1984-06-08 | 1984-06-08 | Optical feedback type semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59118461A JPS60262481A (en) | 1984-06-08 | 1984-06-08 | Optical feedback type semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60262481A true JPS60262481A (en) | 1985-12-25 |
Family
ID=14737224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59118461A Pending JPS60262481A (en) | 1984-06-08 | 1984-06-08 | Optical feedback type semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60262481A (en) |
-
1984
- 1984-06-08 JP JP59118461A patent/JPS60262481A/en active Pending
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