JPS60260495A - Preparation of single crystal of chrysoberyl - Google Patents

Preparation of single crystal of chrysoberyl

Info

Publication number
JPS60260495A
JPS60260495A JP7288185A JP7288185A JPS60260495A JP S60260495 A JPS60260495 A JP S60260495A JP 7288185 A JP7288185 A JP 7288185A JP 7288185 A JP7288185 A JP 7288185A JP S60260495 A JPS60260495 A JP S60260495A
Authority
JP
Japan
Prior art keywords
oxide
rod
raw material
molten zone
shaped raw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7288185A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
河内 明彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP7288185A priority Critical patent/JPS60260495A/en
Publication of JPS60260495A publication Critical patent/JPS60260495A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prepare a large crystal of chrosoberyl easily by forming a molten zone in the starting materials prepd. previously from a powder mixture of Be oxide and Al oxide to a rod at high temp. obtd. by converging infrared rays, and shifting the molten zone. CONSTITUTION:A halogen lamp 4 is placed at one focus of an ellipsoidal mirror of revolution 3, and a rod-shaped starting material 5 prepd. by sintering a mixture consisting of at least Be oxide, Al oxide, and Cr oxide as colorant at >=800 deg.C is placed at another focus. The starting material 5 is supported by an upper revolutional shaft 6 and a lower revolutional shaft 7. The shafts 6, 7 are sealed tightly in a transparent quartz tube 8 and the atmosphere in the tube is adjusted optionally. It is also possible to evacuate or to compress the atmosphere. Only the temp. of the part of the strating material 5 placed at the position coinciding completely to the position of the foci can be elevated to form a molten zone 9. The molten zone 9 is shifted on the starting material rod by the vertical movement of the shaft 6, 7. In this case, the temp. of the molten zone 9 is held at >=1,870 deg.C, the proportion by wt% of Be oxide to Al oxide in the molten zone is regulated to (25-15)/(75-85), and the proportion by weight of the Cr oxide basing on the total weight of the Be oxide and the Al oxide is regulated to 1.54-3.00wt%.

Description

【発明の詳細な説明】 本発明は酸fヒベリリウム、酸化アルミニウム混合粉末
を棒状に成型した原料に、赤外@を焦光してに融帯を形
成し、かつその溶融帯を移動せしめることによりクリン
ベリル単結晶を′M15する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention involves forming a melt zone by focusing infrared light on a raw material made of a mixed powder of hiberllium acid and aluminum oxide molded into a rod shape, and then moving the melt zone. This invention relates to a method for converting crinberyl single crystals.

本発明の目的は、容易に大型クリンベリル単結晶を得る
ことにある。
An object of the present invention is to easily obtain large-sized culinberyl single crystals.

本発明の他の目的は、安価にクリンベリル単結晶を得る
こと番である。
Another object of the present invention is to obtain criberyl single crystals at low cost.

クリンペリルはB e A t204 なる組成を持ち
、天+3 K (d猫目石、アレキサンドライトなどが
宝石として著名である。近年、その光物性からレーザー
ホスト材料として有望視されている。これを人工的に製
造しようとする試はpbo 、pbo−pbF2系、P
b0−PbF、−B、o3系、Li、MOO,〜MOO
Crimperyl has a composition of B e A t204 and is famous for its gemstones such as cat's eye stone and alexandrite. The samples to be manufactured are pbo, pbo-pbF2 system, P
b0-PbF, -B, o3 series, Li, MOO, ~MOO
.

系などの融剤をフラックスとして用いる方法が幾つか行
なわれてき友。しかし、これらの方法では大結晶を得る
ことは碓しく、又、この様な方法で作製した結晶は、双
晶になり易く、単結晶は困難であった。
A number of methods have been used to use fluxes such as Fibers and other fluxes. However, it is difficult to obtain large crystals using these methods, and crystals produced by such methods tend to form twin crystals, making it difficult to produce single crystals.

本発明Wは赤外線を集光することにより得られる高温に
よりあらかじめ棒状に成型した原料中に1さ融帯全形成
し、かつその溶解帯を移動せしめることにより容易にク
リンベリル単結晶が潜られることを見出した。
The W of the present invention is that the high temperature obtained by concentrating infrared rays forms a complete melting zone in the raw material that has been formed into a rod shape in advance, and that by moving the melting zone, the criberyl single crystal can be easily submerged. I found it.

第1図にB e O−A 403系の状態図を示す。FIG. 1 shows a state diagram of the BeOA 403 system.

図から明らかな如く、At203の重量割合が75チか
ら85チの高In f K Be o 、 A 120
3と融液が共存する領域が存在する。この領域から単純
に冷却固化させても5 B eO、A 403又は、B
ed。
As is clear from the figure, the weight ratio of At203 is high from 75 inches to 85 inches.
There is a region where 3 and melt coexist. Even if it is simply cooled and solidified from this region, 5 B eO, A 403 or B
ed.

3 At2 o3とB eO,At203の混晶が生成
するのみで、Bed、人t203の単結晶は得られない
。しかし、本発明方法を用いることにより容易にクリン
ベリル単結晶が得られた。
Only mixed crystals of 3 At2 o3, BeO, and At203 are produced, and single crystals of Bed and At203 are not obtained. However, by using the method of the present invention, criberyl single crystals were easily obtained.

本発明の原理を第2図に示す。The principle of the invention is shown in FIG.

棒状原料1の部分に赤外線IRKより溶融帯2を形成す
る2溶融帯2の組成からAt、oBの重量割合が75%
から85チの間にあるとする。電融帯の温度を1870
℃以上に保ち、溶融帯を原料枠中上方に移動せしめると
、溶解帯下部Hia7゜C以下となり、B eO、A 
t20gと融液が共存する領域が生成する。この領域に
於て、Bed、人t20゜は下部原料中に残り、融液は
溶融fを共に上方に移動する為に、下部原料中にはB 
@ O、*zl o3単結晶のみが残る 下部原料棒即
ち、Be0−At203が育成さ九る領域K B e 
O、A 1203の種子結晶が存在すると結晶化は容易
となり、完全なる単結晶が生成が行なわれる。
A melting zone 2 is formed on the rod-shaped raw material 1 by infrared IRK.2 From the composition of the melting zone 2, the weight ratio of At and oB is 75%.
Assume that it is between 85 and 85 cm. The temperature of the molten zone is 1870
If the temperature is maintained above ℃ and the molten zone is moved upward in the raw material frame, the lower Hia of the molten zone becomes 7℃ or less, and BeO, A
A region where t20g and melt coexist is generated. In this region, Bed and t20° remain in the lower raw material, and since the melt moves upward together with the melt f, B in the lower raw material.
@O, *zl Only the o3 single crystal remains Lower raw material rod, that is, the region where Be0-At203 grows K B e
The presence of O, A 1203 seed crystals facilitates crystallization, and a perfect single crystal is produced.

尚クリンベリル単結晶の緑色を析出させる丸めに眉色剤
として酸化クロムを用いる。酸化クロムは酸比ベリリウ
ムと酸化アルミニウムの合算重量に対して、重電比で1
.54〜AOQ4混入する。
In addition, chromium oxide is used as an eyebrow coloring agent to precipitate the green color of the Crimberyl single crystal. Chromium oxide has a heavy electric ratio of 1 to the total weight of beryllium and aluminum oxide.
.. 54~AOQ4 is mixed.

第6図に於て、本発明を実施する装fKついて説明する
Referring to FIG. 6, a device fK for implementing the present invention will be described.

回転楕円鐘体3内の一焦点に)・ロゲンラング4又はク
セノンランプを配置し、他の焦点に棒状原料5を配置せ
する。棒状原料5は上部回転軸6.下部回転軸7により
支持されている。原料棒5と回転@6.7は透明石英管
8内に密封されており雰囲気を自由(でコントロールで
き、又、真空あるいは加圧する−とも可能である。棒状
原料5中で温度の上るのは焦点に完全に一致した部分の
みであり、この部分が溶融帯?である。溶融帯9は、回
転軸6.7を上下動させることにより棒状原料上を移動
させることができる。
A logen lamp 4 or a xenon lamp is placed at one focal point within the spheroidal bell body 3, and a rod-shaped raw material 5 is placed at the other focal point. The rod-shaped raw material 5 is attached to the upper rotating shaft 6. It is supported by a lower rotating shaft 7. The raw material rod 5 and the rotation @6.7 are sealed in a transparent quartz tube 8, and the atmosphere can be freely controlled, and it is also possible to use vacuum or pressurization. Only the part that completely coincides with the focal point is the molten zone.The molten zone 9 can be moved over the rod-shaped raw material by moving the rotating shaft 6.7 up and down.

本発明方法を用いることにより双晶のない大型完全クリ
ンペリル単結晶の製造が可能となつ九。
By using the method of the present invention, it is possible to produce large-sized perfect crimperyl single crystals without twins.

以下に本発明を′実施例について説明する。The present invention will be described below with reference to embodiments.

実施例1 酸化ベリリウム粉末252、カンマアルミナ粉末751
、酸化クロム粉末3v全ボールミルにて混合した後、棒
状に圧縮成型し120u℃で焼成した。この原料棒を赤
外線集中加熱炉番てセットし溶融帯を5′に1罵/hr
の速度で移動させることに↓り暗緑色のアレキサンドラ
イトの完全結晶全i@ 7t。
Example 1 Beryllium oxide powder 252, comma alumina powder 751
After mixing chromium oxide powder in a 3V full ball mill, the mixture was compression molded into a rod shape and fired at 120uC. This raw material rod was set in an infrared central heating furnace, and the melting zone was set at 5' for 1 hour/hour.
All dark green alexandrite crystals are moved at a speed of 7 tons.

実施例2 酸化ベリリウム、酸比アルミニウム、酸化クロムより、
原料棒の一方の先ン・嵩の溶融帯となる部分のみ酸化ア
ルミニウム80チ酸化ベリリウム20係ととし、上部回
転軸にセットし、下部回転軸に1重子クリンペリル単結
晶をセットし、と;6回転軸と下部回転軸を反対方向に
回転し、溶融帯が形成して後、種子結晶を接触させ、溶
融帯を4動させた。本方法により径10j+ac長さ8
crnのアレキサンドライト結晶を得た 実施例6 酸化アルミニウム60F、酸化ベリリウA’5P酸化ク
ロム11P、d化チタンα5?をボールミル混合し、8
00℃、30 Kz/−J でホットプレス成型して棒
状とした後、赤外線集中加熱装置にセットし、4 K4
/l:ml のrgl累圧下で結晶成長全行ないキャッ
ツアイ状の光条の生ずるクリンベリルを得た。
Example 2 From beryllium oxide, acid ratio aluminum, and chromium oxide,
Only the bulky part of the raw material rod that will become the molten zone is made of 80 parts aluminum oxide and 20 parts beryllium thioxide, and is set on the upper rotating shaft, and a single molecule crimperyl single crystal is set on the lower rotating shaft; The rotating shaft and the lower rotating shaft were rotated in opposite directions, and after a molten zone was formed, the seed crystals were brought into contact and the molten zone was moved four times. With this method, diameter 10j + ac length 8
Example 6 where alexandrite crystals of crn were obtained Aluminum oxide 60F, beryllium oxide A'5P, chromium oxide 11P, titanium d oxide α5? Mix in a ball mill, 8
After hot press molding at 00℃ and 30 Kz/-J into a rod shape, it was set in an infrared concentrated heating device and heated at 4K4
Crystal growth was carried out under an RGL cumulative pressure of /l:ml to obtain criberyl with cat's eye-shaped striations.

本発明では原料棒の焼結温度を800℃以りとしている
が、焼結温度が800℃以下になると合成単結晶の中に
気泡が残る′ことがあり、光学的性質やi飽性を著しく
劣化させる。また着色剤として添加する酸化クロムV′
i酸化ベリリウムと酸化アルミニウムの合算重量の1.
54〜五〇〇%の添加量でちるが、五〇〇%を超えると
酸化クロムの偏析を生じ単結晶の割れ等の慣れがあり、
−また1、54チエり少ないと十分な着色が得られない
In the present invention, the sintering temperature of the raw material rod is set to 800°C or higher, but if the sintering temperature is lower than 800°C, air bubbles may remain in the synthesized single crystal, which significantly impairs optical properties and saturation. deteriorate. Chromium oxide V' added as a coloring agent
i 1 of the total weight of beryllium oxide and aluminum oxide.
Addition amounts of 54 to 500% will reduce the amount of chromium oxide added, but if the amount exceeds 500%, segregation of chromium oxide will occur, resulting in cracks in the single crystal.
- Also, if the amount is less than 1.54 degrees, sufficient coloring cannot be obtained.

本発明によれば材質が均一でしかも着色むらのない大型
の単結晶ヲ堤供したものであり、光学的にも装飾的にも
優れたクリンベリル単結晶が得られた。
According to the present invention, a large single crystal with uniform material and uniform coloration was provided, and a crimberyl single crystal which was excellent both optically and decoratively was obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の詳細な説明する状態図である。 第2南は本発明の詳細な説明する図である、$3図V′
i本宅明に用いる赤外線集中加熱装置の説明図である。 1・・・棒状原料 2・・・溶融帯 6・・・回転楕円鏡体 4・・・ノ・ロゲンランプ5・
・・棒状原料 6・・・上部回転軸7・・・下部回転軸
 8・・・透明石英管?・・・溶融帯 以 上 出願人 株式会社 諏訪1′IlT舎
FIG. 1 is a detailed state diagram illustrating the present invention. The second south is a diagram explaining the invention in detail, $3 Figure V'
FIG. 2 is an explanatory diagram of an infrared concentrated heating device used in i-hontakumei. 1... Rod-shaped raw material 2... Melting zone 6... Spheroidal mirror body 4... Logen lamp 5.
...Rod-shaped raw material 6...Upper rotating shaft 7...Lower rotating shaft 8...Transparent quartz tube? ... Melting zone or above Applicant: Suwa 1' ILT-sha Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 又上下動しうる上回転軸と下回転軸、前記上丁回転・1
11k包囲密封する1明石英・臂、及びハロゲンランプ
もしくけハロゲンランプからなる加熱ランプを有する赤
外、礫集中加熱炉を用いた単結晶製造方法において、少
くとも愼比べ111Jウムと酸化アルミニウム及び酸化
クロムを混合して800℃以−ヒで焼結した棒状原料を
形成し、iff記ful転楕円境体内の1焦点に前記・
用熱ランプを配置し、他の焦点に前記棒状原料が配置さ
れるようVCC前玉上回転軸間前記1状1■料を固定し
、前記加熱ランプの赤外線を用いて前、r8棒状原料に
溶4市を形成するとともに前記棒状原料を長手方向に4
動させることにより前記溶融帯を−II記棒状原料に沿
って移動させ、同時に溶融帯下部に単結晶を形成して成
り、更に前記溶祇帝温度V′11870℃以上であり、
且つ前記溶融帯における前記酸化ベリリウムと前記酸化
アルミニウムの混合割合が酸化ベリリウム25〜15重
量%、酸fヒアルミニウム75〜85重考係であり、且
つ前記酸化クロムが前記酸化ベリリウムと前記酸rヒア
ルミニラムの合算重量に対して1.54〜3.00重量
%であることを特徴とするクリンベリル単結晶裂造法。
In addition, the upper rotating shaft and lower rotating shaft can move up and down, and the above-mentioned upper rotating shaft 1
In a single crystal manufacturing method using an infrared, gravel-concentrated heating furnace with a 11k enclosing and sealed quartz arm, and a heating lamp consisting of a halogen lamp or a halogen lamp, at least 111J um, aluminum oxide and oxidized A rod-shaped raw material is formed by mixing chromium and sintering at 800°C or higher, and the above-mentioned
Place a heating lamp, fix the material between the rotating shafts on the VCC front ball so that the rod-shaped raw material is placed at the other focal point, and use the infrared rays of the heat lamp to place the rod-shaped raw material in the front R8 rod-shaped raw material. While forming four melting holes, the rod-shaped raw material is
The molten zone is moved along the rod-shaped raw material described in -II by moving, and at the same time a single crystal is formed at the lower part of the molten zone, and the molten temperature is V'11870°C or higher,
and the mixing ratio of the beryllium oxide and the aluminum oxide in the melting zone is 25 to 15% by weight of beryllium oxide and 75 to 85% by weight of acid hyaluminum, and the chromium oxide is a mixture of beryllium oxide and acid hyaluminum. 1.54 to 3.00% by weight based on the total weight of Crimberyl single crystal.
JP7288185A 1985-04-05 1985-04-05 Preparation of single crystal of chrysoberyl Pending JPS60260495A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7288185A JPS60260495A (en) 1985-04-05 1985-04-05 Preparation of single crystal of chrysoberyl

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7288185A JPS60260495A (en) 1985-04-05 1985-04-05 Preparation of single crystal of chrysoberyl

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7248577A Division JPS6042195B2 (en) 1977-06-17 1977-06-17 Chrysoberyl single crystal manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP26121987A Division JPS63260894A (en) 1987-10-16 1987-10-16 Production of single crystal of chrysoberyl

Publications (1)

Publication Number Publication Date
JPS60260495A true JPS60260495A (en) 1985-12-23

Family

ID=13502117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7288185A Pending JPS60260495A (en) 1985-04-05 1985-04-05 Preparation of single crystal of chrysoberyl

Country Status (1)

Country Link
JP (1) JPS60260495A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260894A (en) * 1987-10-16 1988-10-27 Seiko Epson Corp Production of single crystal of chrysoberyl

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546900A (en) * 1977-06-17 1979-01-19 Seiko Epson Corp Production of clean beryl single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546900A (en) * 1977-06-17 1979-01-19 Seiko Epson Corp Production of clean beryl single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260894A (en) * 1987-10-16 1988-10-27 Seiko Epson Corp Production of single crystal of chrysoberyl
JPH0329758B2 (en) * 1987-10-16 1991-04-25

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