JPS60257512A - 真空処理装置における基板の冷却方法 - Google Patents

真空処理装置における基板の冷却方法

Info

Publication number
JPS60257512A
JPS60257512A JP59113044A JP11304484A JPS60257512A JP S60257512 A JPS60257512 A JP S60257512A JP 59113044 A JP59113044 A JP 59113044A JP 11304484 A JP11304484 A JP 11304484A JP S60257512 A JPS60257512 A JP S60257512A
Authority
JP
Japan
Prior art keywords
substrate
cooling gas
cooling
gap
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59113044A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237693B2 (enExample
Inventor
Izumi Nakayama
泉 中山
Toshio Kusumoto
淑郎 楠本
Yoji Inoue
井上　養二
Haruo Sugiyama
春男 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP59113044A priority Critical patent/JPS60257512A/ja
Publication of JPS60257512A publication Critical patent/JPS60257512A/ja
Publication of JPH0237693B2 publication Critical patent/JPH0237693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59113044A 1984-06-04 1984-06-04 真空処理装置における基板の冷却方法 Granted JPS60257512A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59113044A JPS60257512A (ja) 1984-06-04 1984-06-04 真空処理装置における基板の冷却方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59113044A JPS60257512A (ja) 1984-06-04 1984-06-04 真空処理装置における基板の冷却方法

Publications (2)

Publication Number Publication Date
JPS60257512A true JPS60257512A (ja) 1985-12-19
JPH0237693B2 JPH0237693B2 (enExample) 1990-08-27

Family

ID=14602063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59113044A Granted JPS60257512A (ja) 1984-06-04 1984-06-04 真空処理装置における基板の冷却方法

Country Status (1)

Country Link
JP (1) JPS60257512A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114964A (ja) * 1986-10-31 1988-05-19 Tokyo Electron Ltd 薄膜形成装置
JPH03174719A (ja) * 1989-09-01 1991-07-29 Fuji Electric Co Ltd 乾式成膜装置
EP0451740A3 (en) * 1990-04-09 1991-12-27 Anelva Corporation Temperature control system for semiconductor wafer or substrate
JPH04150937A (ja) * 1990-10-11 1992-05-25 Hitachi Ltd 試料温度制御方法及び真空処理装置
JPH05182930A (ja) * 1991-11-29 1993-07-23 Nichiden Mach Ltd ウェーハ冷却装置
US6610180B2 (en) 2000-08-01 2003-08-26 Anelva Corporation Substrate processing device and method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832410A (ja) * 1981-08-06 1983-02-25 ザ・パ−キン−エルマ−・コ−ポレイシヨン ガス状減圧環境下で構造物を処理する方法及び装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832410A (ja) * 1981-08-06 1983-02-25 ザ・パ−キン−エルマ−・コ−ポレイシヨン ガス状減圧環境下で構造物を処理する方法及び装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114964A (ja) * 1986-10-31 1988-05-19 Tokyo Electron Ltd 薄膜形成装置
JPH03174719A (ja) * 1989-09-01 1991-07-29 Fuji Electric Co Ltd 乾式成膜装置
EP0451740A3 (en) * 1990-04-09 1991-12-27 Anelva Corporation Temperature control system for semiconductor wafer or substrate
JPH04150937A (ja) * 1990-10-11 1992-05-25 Hitachi Ltd 試料温度制御方法及び真空処理装置
JPH05182930A (ja) * 1991-11-29 1993-07-23 Nichiden Mach Ltd ウェーハ冷却装置
US6610180B2 (en) 2000-08-01 2003-08-26 Anelva Corporation Substrate processing device and method

Also Published As

Publication number Publication date
JPH0237693B2 (enExample) 1990-08-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term