JPS60253216A - 半導体へのアルミニウム拡散法 - Google Patents

半導体へのアルミニウム拡散法

Info

Publication number
JPS60253216A
JPS60253216A JP23703583A JP23703583A JPS60253216A JP S60253216 A JPS60253216 A JP S60253216A JP 23703583 A JP23703583 A JP 23703583A JP 23703583 A JP23703583 A JP 23703583A JP S60253216 A JPS60253216 A JP S60253216A
Authority
JP
Japan
Prior art keywords
diffusion
thin film
semiconductor
aluminum
sputtering method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23703583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356701B2 (enExample
Inventor
Seiki Sato
清貴 佐藤
Kazumasa Sugawara
菅原　一誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP23703583A priority Critical patent/JPS60253216A/ja
Publication of JPS60253216A publication Critical patent/JPS60253216A/ja
Publication of JPS6356701B2 publication Critical patent/JPS6356701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP23703583A 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法 Granted JPS60253216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23703583A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23703583A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Publications (2)

Publication Number Publication Date
JPS60253216A true JPS60253216A (ja) 1985-12-13
JPS6356701B2 JPS6356701B2 (enExample) 1988-11-09

Family

ID=17009429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23703583A Granted JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Country Status (1)

Country Link
JP (1) JPS60253216A (enExample)

Also Published As

Publication number Publication date
JPS6356701B2 (enExample) 1988-11-09

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