JPS6356701B2 - - Google Patents

Info

Publication number
JPS6356701B2
JPS6356701B2 JP23703583A JP23703583A JPS6356701B2 JP S6356701 B2 JPS6356701 B2 JP S6356701B2 JP 23703583 A JP23703583 A JP 23703583A JP 23703583 A JP23703583 A JP 23703583A JP S6356701 B2 JPS6356701 B2 JP S6356701B2
Authority
JP
Japan
Prior art keywords
diffusion
aluminum
aln
semiconductor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23703583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60253216A (ja
Inventor
Seiki Sato
Kazumasa Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP23703583A priority Critical patent/JPS60253216A/ja
Publication of JPS60253216A publication Critical patent/JPS60253216A/ja
Publication of JPS6356701B2 publication Critical patent/JPS6356701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP23703583A 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法 Granted JPS60253216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23703583A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23703583A JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Publications (2)

Publication Number Publication Date
JPS60253216A JPS60253216A (ja) 1985-12-13
JPS6356701B2 true JPS6356701B2 (enExample) 1988-11-09

Family

ID=17009429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23703583A Granted JPS60253216A (ja) 1983-12-14 1983-12-14 半導体へのアルミニウム拡散法

Country Status (1)

Country Link
JP (1) JPS60253216A (enExample)

Also Published As

Publication number Publication date
JPS60253216A (ja) 1985-12-13

Similar Documents

Publication Publication Date Title
US2695852A (en) Fabrication of semiconductors for signal translating devices
US3664896A (en) Deposited silicon diffusion sources
US3202887A (en) Mesa-transistor with impurity concentration in the base decreasing toward collector junction
US4137103A (en) Silicon integrated circuit region containing implanted arsenic and germanium
US4001047A (en) Temperature gradient zone melting utilizing infrared radiation
US3184347A (en) Selective control of electron and hole lifetimes in transistors
US3158504A (en) Method of alloying an ohmic contact to a semiconductor
US2898247A (en) Fabrication of diffused junction semi-conductor devices
GB998386A (en) Method of producing electrical semiconductor devices
JPS6356701B2 (enExample)
US3290188A (en) Epitaxial alloy semiconductor devices and process for making them
US4105477A (en) Doping of (hg,cd)te with a group va element
US4105479A (en) Preparation of halogen doped mercury cadmium telluride
JPH0249422A (ja) 炭化珪素半導体装置の製造方法
US3956026A (en) Making a deep diode varactor by thermal migration
JP2760602B2 (ja) 半導体装置の製造方法
JPS60127727A (ja) 半導体へのアルミニウム拡散法
US3975213A (en) High voltage diodes
US3697338A (en) Method of manufacturing semiconductor devices
JPS62190721A (ja) 半導体装置の製造方法
JPH0294625A (ja) 多結晶シリコン膜、その膜の形成方法及びその膜を用いた光起電力装置
US4089713A (en) Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy
KR0123236B1 (ko) 반도체 소자의 폴리실리콘막 형성 방법
KR850001097B1 (ko) 고주파 반도체 소자의 제조방법
SU550061A1 (ru) Способ создани р-п-переходов в сложных полупроводниках