JPS60250601A - Method of producing self temperature control resistor - Google Patents
Method of producing self temperature control resistorInfo
- Publication number
- JPS60250601A JPS60250601A JP10584184A JP10584184A JPS60250601A JP S60250601 A JPS60250601 A JP S60250601A JP 10584184 A JP10584184 A JP 10584184A JP 10584184 A JP10584184 A JP 10584184A JP S60250601 A JPS60250601 A JP S60250601A
- Authority
- JP
- Japan
- Prior art keywords
- crosslinking agent
- self
- temperature
- electron beam
- temperature control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、暖房器具等に用いられる自己温度制御抵抗体
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to self-temperature control resistors used in heating appliances and the like.
従来例の構成とその問題点
従来のこの種の自己温度制御抵抗体は、結晶性樹脂とカ
ーボン・ブラックとの混練物にＩＯＭｒａｄ以上の照射
線量の電子線照射して製造されていた。ここでおこなわ
れている電子線照射は結晶性樹脂を架橋させ、カーボン
・ブラックを結晶性樹脂中である程度固定させて抵抗体
の抵抗値を安定化させるものである。この架橋の度合を
測るものとしてゲル分率がある。カーボン・ブラックを
結晶性樹脂中を固定安定するためには、少なくともゲル
分率が５０％以上必要である。照射線量とゲル分率の関
係を第１図に示す。図に示すように、ゲル分率が５０％
以上で、工業的に安定したゲル分率を得るだめには１０
Ｍｒａｄ以上の照射線量が必要となる。このため、長い
時間照射しなければならない。また、電子線量が多量に
必要などという問題を有していた。Structure of conventional example and its problems Conventional self-temperature control resistors of this type were manufactured by irradiating a kneaded mixture of crystalline resin and carbon black with an electron beam at a dose of IOMrad or more. The electron beam irradiation carried out here crosslinks the crystalline resin, fixes carbon black to some extent in the crystalline resin, and stabilizes the resistance value of the resistor. Gel fraction is a measure of the degree of crosslinking. In order to stably fix carbon black in a crystalline resin, a gel fraction of at least 50% is required. Figure 1 shows the relationship between irradiation dose and gel fraction. As shown in the figure, the gel fraction is 50%
From the above, in order to obtain an industrially stable gel fraction, 10
An irradiation dose of Mrad or more is required. Therefore, it is necessary to irradiate for a long time. Another problem was that a large amount of electron beam was required.
発明の目的
本発明はかかる従来の問題を解消するもので、工業的に
安定したゲル分率を得るだめの照射時間を短かくすると
ともに、電子線量を少なくし、省エネルギー化を図るこ
とを目的とする。Purpose of the Invention The present invention solves such conventional problems, and aims to shorten the irradiation time to obtain an industrially stable gel fraction, reduce the amount of electron beam, and save energy. do.
発明の構成
この目的を達成するだめに、本発明は、結晶性樹脂とカ
ーボン・ブラックとの混練時に架橋剤を混入せしめた混
練物に、電子線照射する抵抗体の製造方法である。この
製造方法によって、電子線照射を混練物にする場合、架
橋剤にも照射されるだめに、架橋剤が活性化され、架橋
が促進されるという作用を有する。SUMMARY OF THE INVENTION In order to achieve this object, the present invention provides a method for manufacturing a resistor, in which a kneaded product in which a crosslinking agent is mixed with a crystalline resin and carbon black during kneading is irradiated with an electron beam. When a kneaded product is subjected to electron beam irradiation using this manufacturing method, the crosslinking agent is activated and crosslinking is promoted as soon as the crosslinking agent is also irradiated.
実施例の説明
以下、本発明の一実施例を説明する。結晶性樹脂として
ポリエチレン（住友化学・ヌミ力センＥ２０９）とカー
ボン・ブラック（電気化学工業・デンカ・アセチレン・
ブラック）との混練時に架橋剤として２，４−へキサジ
イン−１，６ビスｎ−ブチルウレタンを２重量％混入し
、その混練物に、電子線照射を行ったものである。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below. Polyethylene (Sumitomo Chemical, Numi Rikisen E209) and carbon black (Denka, Denka, Acetylene,
2,4-hexadiyne-1,6bis-n-butyl urethane was mixed as a crosslinking agent in an amount of 2% by weight during kneading with black), and the kneaded product was irradiated with an electron beam.
上記製造方法において、架橋剤を混入しているだめには
０．５Ｍｒａｄの照射線量で充分であり、工業的にも安
定なゲル分率を得るためには、５Ｍｒａｄの照射線量で
充分となっている。よって、短時間で安定した架橋度を
得ることが可能となり、省エネルギー効果もある。In the above manufacturing method, an irradiation dose of 0.5 Mrad is sufficient for a gel containing a crosslinking agent, and an irradiation dose of 5 Mrad is sufficient to obtain an industrially stable gel fraction. There is. Therefore, it becomes possible to obtain a stable degree of crosslinking in a short time, and there is also an energy saving effect.
なお、前記実施例では架橋剤として、２．４−ヘキサジ
イン−１，６ビヌｎ−ブチルウレタンのジアセチレン系
のモノマーを使用したが、ウレタン系あるいはアリル系
の多官能性モノマーを使用しても同様な結果が得られる
。In the above examples, a diacetylene monomer of 2,4-hexadiyne-1,6-binu-n-butyl urethane was used as the crosslinking agent, but a urethane-based or allyl-based polyfunctional monomer may be used. similar results can be obtained.
発明の効果
以上のように本発明の抵抗体の製造方法によれば次の効
果が得られる。Effects of the Invention As described above, the method for manufacturing a resistor of the present invention provides the following effects.
（１）電子線が混入された架橋剤を活性化し、架橋を促
進するために、短時間で安定した架橋度が得られる。(1) Since the electron beam activates the mixed crosslinking agent and promotes crosslinking, a stable degree of crosslinking can be obtained in a short time.
（２）短時間で電子線照射が完了するために、省工 第
ネルギー効果がある。(2) Since electron beam irradiation is completed in a short time, there is a labor-saving and energy-saving effect.
第１図は従来の抵抗体の製改方法の架橋度の度合を示す
照射線量とゲル分率の関係図、第２図は本発明の抵抗体
の製造方法の架橋度の度合を示す照射線量とゲル分率の
関係図である。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第
１図
０２４６ ａ １０１２１４ ／６ Ｉｌｌ ２６照引
線量（Ｍｒａｔｉ）
２図
照射線Figure 1 is a diagram showing the relationship between irradiation dose and gel fraction showing the degree of crosslinking in the conventional resistor manufacturing method, and Figure 2 shows the irradiation dose showing the degree of crosslinking in the resistor manufacturing method of the present invention. FIG. 3 is a diagram showing the relationship between Name of agent Patent attorney Toshio Nakao and one other person Figure 1 0246 a 101214 /6 Ill 26 Irradiation dose (Mrati) Figure 2 Irradiation ray
Claims (5)
橋剤を混入せしめだ混練物に、電子線照射してなる自己
温度制御抵抗体の製造方法。(1) A method for producing a self-temperature-controlling resistor, in which a crosslinking agent is mixed into a crystalline resin and carbon black during kneading, and the kneaded mixture is irradiated with an electron beam.
る特許請求の範囲第１項記載の自己温度制御抵抗体の製
造方法。(2) The method for producing a self-temperature-controlling resistor according to claim 1, wherein the crosslinking agent is a diacetylene-based polyfunctional monomer.
ノマーである特許請求の範囲第１項記載の自己温度制御
抵抗体の製造方法。(3) The method for producing a self-temperature-controlling resistor according to claim 1, wherein the crosslinking agent is an acrylic or allyl polyfunctional monomer.
ブチルウレタンである特許請求の範囲第１項記載の自己
温度制御抵抗体の製造方法。(4) The crosslinking agent is 2,4-hexadiyne-1,6binu-n-
A method for manufacturing a self-temperature-controlling resistor according to claim 1, which is made of butyl urethane.
ｒａｄである特許請求の範囲第１項記載の自己温度制御
へ抵抗体の製造方法。(5) The irradiation dose of electron beam irradiation is from 0.5Mrad to 5M
A method of manufacturing a resistor for self-temperature control according to claim 1, which is rad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10584184A JPS60250601A (en) | 1984-05-25 | 1984-05-25 | Method of producing self temperature control resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10584184A JPS60250601A (en) | 1984-05-25 | 1984-05-25 | Method of producing self temperature control resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60250601A true JPS60250601A (en) | 1985-12-11 |
Family
ID=14418241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10584184A Pending JPS60250601A (en) | 1984-05-25 | 1984-05-25 | Method of producing self temperature control resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60250601A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142902A (en) * | 1984-08-07 | 1986-03-01 | 出光興産株式会社 | Method of producing thermosensitive resistive conductive composition |
| JPH0217609A (en) * | 1988-07-06 | 1990-01-22 | Matsushita Electric Ind Co Ltd | Positive resistance temperature coefficient heating element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153150A (en) * | 1976-06-15 | 1977-12-20 | Nissin Electric Co Ltd | Capacitor |
| JPS582371A (en) * | 1981-06-17 | 1983-01-07 | スミス・アンド・ネフユ−・アソシエイテツド・コンパニ−ズ・ピ−エルシ− | Curable pressure sensitive adhesive and manufacture |
| JPS58100389A (en) * | 1981-12-08 | 1983-06-15 | 住友電気工業株式会社 | Panel heater |
| JPS58208367A (en) * | 1982-05-28 | 1983-12-05 | Nissin Electric Co Ltd | Sealer |
-
1984
- 1984-05-25 JP JP10584184A patent/JPS60250601A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153150A (en) * | 1976-06-15 | 1977-12-20 | Nissin Electric Co Ltd | Capacitor |
| JPS582371A (en) * | 1981-06-17 | 1983-01-07 | スミス・アンド・ネフユ−・アソシエイテツド・コンパニ−ズ・ピ−エルシ− | Curable pressure sensitive adhesive and manufacture |
| JPS58100389A (en) * | 1981-12-08 | 1983-06-15 | 住友電気工業株式会社 | Panel heater |
| JPS58208367A (en) * | 1982-05-28 | 1983-12-05 | Nissin Electric Co Ltd | Sealer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142902A (en) * | 1984-08-07 | 1986-03-01 | 出光興産株式会社 | Method of producing thermosensitive resistive conductive composition |
| JPH0369164B2 (en) * | 1984-08-07 | 1991-10-31 | Idemitsu Kosan Co | |
| JPH0217609A (en) * | 1988-07-06 | 1990-01-22 | Matsushita Electric Ind Co Ltd | Positive resistance temperature coefficient heating element |
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