JPS60246281A - Nitration for quartz material - Google Patents
Nitration for quartz materialInfo
- Publication number
- JPS60246281A JPS60246281A JP10382084A JP10382084A JPS60246281A JP S60246281 A JPS60246281 A JP S60246281A JP 10382084 A JP10382084 A JP 10382084A JP 10382084 A JP10382084 A JP 10382084A JP S60246281 A JPS60246281 A JP S60246281A
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- quartz material
- nitriding
- nitration
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 本発明は石英材の窒化処理方法に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a method for nitriding quartz material.
従来、石英材はその耐熱性特性を活用し、特に表面処理
することなく用いられるのが通例であった。Conventionally, quartz materials have been used without any particular surface treatment to take advantage of their heat-resistant properties.
しかし、上記従来技術によると、半導体の熱処理用石英
管や石英治具等に於て汚染不純物が石英材自体あるいは
周辺ヒーターあるいは耐熱レンガから拡散して半導体制
料を汚染する欠点があった〔目的〕
上記従来技術の欠点をなくシ、石英材がらのｌり染不純
物の拡散をなくするための石英材の表向処理方法を提供
することを目的とする。However, the above-mentioned conventional technology has the disadvantage that contaminant impurities diffuse from the quartz material itself, surrounding heaters, or heat-resistant bricks in the quartz tubes and quartz jigs for semiconductor heat treatment, and contaminate the semiconductor materials. ] It is an object of the present invention to provide a surface treatment method for quartz material that eliminates the drawbacks of the above-mentioned conventional techniques and eliminates the diffusion of dye impurities in the quartz material.
上記目的を達成するための本発明の基本的な構成は、石
英材の窒化処理方法に関し、石英月をアンモニア雰囲気
中または窒素と水素雰囲気中またはそれらのプラズマ雰
囲気中に高温で晒し、少くとも石英材表向をシリコン窒
化すること？特徴とする。The basic structure of the present invention to achieve the above object relates to a method for nitriding quartz material, in which quartz is exposed at high temperature to an ammonia atmosphere, a nitrogen and hydrogen atmosphere, or a plasma atmosphere thereof, and at least Is it silicon nitriding on the surface of the material? Features.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す石英管内壁の窒化処理
方法を示す図である。すなわち、石英管１とそれに連ら
なったノズル２がらアンモニア・ガスを石英管内に入れ
、ヒーター３ζこて該石英臂１を１０００℃以上、１２
００℃程度に加熱すると、石英管１の内壁部にシリコン
窒化層４が形成される。本処理を長時間性なうと石英管
は全層窒化され、シリコン窒化物管となる。更に、石英
管１内に石英治具を設置すると、該石英治具も窒化処理
される。FIG. 1 is a diagram showing a method for nitriding the inner wall of a quartz tube according to an embodiment of the present invention. That is, ammonia gas is introduced into the quartz tube through the quartz tube 1 and the nozzle 2 connected thereto, and the quartz arm 1 is heated to 12
When heated to about 00° C., a silicon nitride layer 4 is formed on the inner wall of the quartz tube 1. If this treatment is continued for a long time, the entire layer of the quartz tube will be nitrided and it will become a silicon nitride tube. Further, when a quartz jig is installed inside the quartz tube 1, the quartz jig is also subjected to nitriding treatment.
本発明の如く、少くとも石英材表囲を熱窒化処理するこ
とにより、容易に窒化処理が出来ると共に、良質の窒化
材が形成でき、石英材の耐熱性能と汚染拡散防止性能が
向上する効果がある。By thermally nitriding at least the surface of the quartz material as in the present invention, the nitriding process can be easily performed, a high-quality nitrided material can be formed, and the heat resistance performance and contamination diffusion prevention performance of the quartz material can be improved. be.
第１図は本発明の一実施例を示す石英管の表向処理方法
を示す図である。
１・・・・・・石英管
２・・・・・・ノズル
５・・・・・・ヒーター
４・・・・・・シリコン窒化層
第１図FIG. 1 is a diagram showing a method for surface treatment of a quartz tube according to an embodiment of the present invention. 1...Quartz tube 2...Nozzle 5...Heater 4...Silicon nitride layer Fig. 1
Claims (1)
中またはそれらのプラズマ雰囲気中に高温で晒し、少く
とも石英材表面をシリコン窒化することを特徴とする石
英材の窒化処理方法。A method for nitriding a quartz material, which comprises exposing the quartz material to a 9J ammonia atmosphere, a nitrogen and hydrogen atmosphere, or a plasma atmosphere thereof at high temperature to nitride at least the surface of the quartz material with silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10382084A JPS60246281A (en) | 1984-05-23 | 1984-05-23 | Nitration for quartz material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10382084A JPS60246281A (en) | 1984-05-23 | 1984-05-23 | Nitration for quartz material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60246281A true JPS60246281A (en) | 1985-12-05 |
Family
ID=14364043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10382084A Pending JPS60246281A (en) | 1984-05-23 | 1984-05-23 | Nitration for quartz material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246281A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173236A (en) * | 2004-12-14 | 2006-06-29 | Tokyo Electron Ltd | Method and device for forming silicon acid nitride film, and program |
-
1984
- 1984-05-23 JP JP10382084A patent/JPS60246281A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173236A (en) * | 2004-12-14 | 2006-06-29 | Tokyo Electron Ltd | Method and device for forming silicon acid nitride film, and program |
| US7981809B2 (en) | 2004-12-14 | 2011-07-19 | Tokyo Electron Limited | Film formation method and apparatus for semiconductor process |
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