JPH0245913A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To reduce heat dissipation from a reaction chamber to set temperature uniformly at each section in the reaction chamber by providing a heat blocking member on the inside surface of the reaction chamber not heated by a heater. CONSTITUTION:Inside surface of a handle section door 2 and a source section door 3 are coated with high temperature sintered ceramics 9 having lower thermal conductivity than stainless. When a wafer 8 is heated by a handle section heater 4, an outer section heater 5, and a source section heater 6, heat dissipation is more restricted compared with prior cases. Thus, a temperature hysteresis at each section in a reaction chamber 1 is made the same and temperature at each section in the reaction chamber 1 is set uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to semiconductor manufacturing 5A@ having a heating mechanism.

[Conventional technology]

FIG. 2 is a sectional view of a cylindrical tube type plasma CVD apparatus, which is a conventional semiconductor manufacturing apparatus of this type. In the figure, 1 is a cylindrical tube-shaped reaction chamber, 2 is a door on the side where the reaction gas is introduced (hereinafter referred to as the handle part), and 3 is the door on the side where the gas is exhausted after the reaction (hereinafter referred to as the source part). be. The material used for the handle door 2 and the source door 3 is stainless steel.

4 is a handle heater for heating the handle; 5
1 is a center part heater for heating a part of the center of the reaction chamber 1, and 6 is a source part heater for heating a source part. 7 is a wafer susceptor, and a wafer 8 is placed on the wafer susceptor 7.

Next, a process of processing the wafer 8 using the reaction chamber 1 will be explained. First, place the wafer 8 on the wafer susceptor 7.
Arrange. Thereafter, the wafer susceptor 7 with the wafers 8 arranged thereon is placed into the reaction chamber 1 by, for example, opening the handle door 2. Then, close the handle door 2, turn on the handle heater 4° and the center partial heater 5. The handle portion, a part of the center, and the source portion are heated by the source portion heater 6 to bring the temperature of the knee 8 to 250° C. to 400° C. Then, plasma is generated in the reaction chamber 1 while gas is injected from the handle part and exhausted from the source part, and CVD processing is performed.

[Problem to be solved by the invention]

Conventional semiconductor manufacturing equipment is configured as described above.
The thermal conductivity of stainless steel, which is the material for the handle door 2 and the source door 3 (when there is a 1°C temperature difference on both sides of a plate with a thickness of 1 clR, the amount of heat that flows through 1 cIll of the plate in 1 second) is 0. It is relatively large at 245 J/ca+・s-, and even if the handle, center, and source parts are heated in the same way, the heat dissipated from the handle part door 2 and the source part door 3 is large, and the temperature of the center part is higher. The temperature history inside the reaction chamber 1 is different in each part, as the temperature rises to 100.degree. There was a problem in that it affected the processing state of the wafer 8, such as not becoming wafer 8. This problem has become even more serious in today's world, where the diameter of the reaction chamber 1 has increased as the diameter of the wafer 8 has increased.

In addition, in plasma CVD performed in a low temperature range of 250°C to 400°C, it is easily affected by the temperature of the outside air through the handle door 2 and the source door 3, and the temperature of each part in the reaction chamber 1 is kept uniform. The problem was that it was even more difficult to do so.

This invention was made in order to solve the above-mentioned problems, and it prevents heat radiation from the reaction chamber, makes the temperature history of each part of the reaction chamber the same, and easily makes the temperature in the reaction chamber uniform. The purpose is to obtain semiconductor manufacturing equipment that can

[Means to solve the problem]

A semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus having a reaction chamber and a heater for heating the reaction chamber, and has a structure in which a heat shielding material is provided on the inner surface of the reaction chamber that is not heated by the heater. .

[Effect]

The heat shielding material in this invention prevents heat radiation from the reaction chamber. Therefore, not only can the temperature history of each part of the reaction chamber be made the same, but also the temperature within the reaction chamber can be easily made uniform.

〔Example〕

FIG. 1 is a sectional view showing an embodiment of the present invention. In the figure, the difference from the conventional example shown in FIG. 2 is that the inner surfaces of the handle door 2 and the source door 3 are coated with high-temperature sintered ceramic 9, which has a lower thermal conductivity than stainless steel.

The rest of the configuration is the same as in the conventional example, and the process of processing the wafer 8 using the reaction chamber 1 is completely the same as in the conventional example. In this step, the handle heater 4.
Partial center heater 5. When the wafer 8 is heated using the source heater 6, the inner surfaces of the handle door 2 and the source door 3 are coated with high-temperature sintered ceramics 9, so that heat radiation is suppressed more than in the past. In concrete terms, the thermal conductivity of stainless steel is 0.245J/
The thermal conductivity of the high-temperature sintered ceramics 9 is 10.5x 10-3 J/co+-s-k, and by coating the high-temperature sintered ceramics 9, the heat dissipation is reduced to about 1/1 compared to the conventional one. This will reduce the number to 25.

Therefore, when heating the wafer 8, the temperature of only a part of the center does not rise first as in the conventional case, and the temperature history of each part of the reaction chamber 1 becomes the same, and the temperature of each part of the reaction chamber 1 is kept the same. The temperature can be easily set to be uniform, and the processing state of the wafer 8 is not affected. In particular, 2
Plasma C performed at a low temperature range of 50℃ to 400℃
In the VD, there is no influence from external disturbances such as outside air through the handle door 2 and the source door 3, unlike in the conventional case.

In the above embodiment, high-temperature sintered ceramics 9 were used as the heat shielding material, but any material may be used as long as it can reduce heat dissipation.

Further, although the above embodiments have been described with respect to a plasma CVD apparatus, the present invention can also be applied to a similar semiconductor manufacturing apparatus.

[Effects of the Invention] As described above, according to the present invention, since the heat shielding material is provided on the inner surface of the reaction chamber that is not heated by the heater, the heat radiation from the reaction chamber is reduced, and the reaction chamber is not heated by the heater. In this case, the temperature history of each part of the reaction chamber becomes the same, and the temperature of each part of the reaction chamber can be easily set uniformly. Particularly, plasma CVD performed in a low temperature region has the advantage of not being affected by disturbances such as outside air.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a reaction chamber, 4 is a handle heater, 5 is a center partial heater, 6 is a source heater, and 9 is a high-temperature sintered ceramic. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] (1) A semiconductor manufacturing apparatus having a reaction chamber and a heater for heating the reaction chamber, characterized in that a heat shielding material is provided on the inner surface of the reaction chamber that is not heated by the heater. Manufacturing equipment.