JPS60245185A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS60245185A JPS60245185A JP59100799A JP10079984A JPS60245185A JP S60245185 A JPS60245185 A JP S60245185A JP 59100799 A JP59100799 A JP 59100799A JP 10079984 A JP10079984 A JP 10079984A JP S60245185 A JPS60245185 A JP S60245185A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- junction
- electrode
- forbidden band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 230000007423 decrease Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 229910006992 Si1-xCx Inorganic materials 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体光電変換装置に係り、特に開放電圧およ
び光電変換効率の向上に閃するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor photoelectric conversion device, and is particularly directed to improving open circuit voltage and photoelectric conversion efficiency.
従来のアモルファス半導体光電変換装置（以下光電変換
器と表わす）はｐ形半導体層（以後ｐ層と表わす）、ｉ
形半導体層（以後ｉ層と表わす）、およびｎ形半導体層
（以後ｎ層と表わす）の順に接合さセ“ると共に、９層
には入射光の透過性を良くするためにｉ層よりも禁制帯
幅が広いａ−８ｉ１−’ｘＣｘ ：’Ｈ（０＜ｘ＜ １
）が使用され、とくにｘ＝０．３に相当するａ −Ｓ
１ｏ７ｃ ｏ３： Ｈが標準として使用されている。A conventional amorphous semiconductor photoelectric conversion device (hereinafter referred to as a photoelectric converter) has a p-type semiconductor layer (hereinafter referred to as p layer), i
A type semiconductor layer (hereinafter referred to as an i-layer) and an n-type semiconductor layer (hereinafter referred to as an n-layer) are bonded in this order. Wide forbidden band width a-8i1-'xCx :'H (0<x<1
) is used, in particular a −S corresponding to x=0.3
1o7co3:H is used as standard.
このような光電変換器のｐ胸ｉ ｉ層の厚み方向の□エ
ネルギーバンドは第３図のようであり、ｐＳ ｌ接合界
面にエネルギーバンドの不連続な部分１１が存在するこ
とが原因となって、入射光によってｐ層で発生した光電
子は接合面に到達して、ｉ層で発生した不連続部分１１
に到達した正孔と再結合してしまい、キャリヤーとして
は働かない欠点がある。す々わち第３図の１は伝導帯、
２は禁制帯、３はフェルミ準位、４は価電子帯、５は電
子、６はｐ層、７は１層、８は正孔であり、この構成に
おりるｐ層材料ａ−８ｉｚ−ｘＣｘ： Ｈ（０＜ｘ＜
１ ）の仕事関数をφｐ１禁制帯幅をＥＪｐとし、１層
材料ａ−８ｉ：Ｈの仕事関数φｉおよび禁制帯幅ＥＩｉ
として比較すると下記！１１． （２１のような関係（
ｒＣあると共に、ｐ層とｉφｐ〉φｉ（１）
Ｅｇｐ＞ Ｅ、ｌ／ ｉ ｆ２１
層の格子定数が異なるために、ｐ層、ｉ層接合部の価電
子帯および伝導帯で１１に示すようなエネルギーハンド
の不連続面が発生すると共に９に示すよう々界面率・位
が発生フるのでるり、さらにｐ層に発生した光電子は電
界がかからないために接合面へ流れてし葦い、正孔と再
結合する動きをするのである。The □ energy band in the thickness direction of the p-thickness layer of such a photoelectric converter is as shown in Figure 3, and is caused by the presence of a discontinuous portion 11 of the energy band at the pS l junction interface. , photoelectrons generated in the p layer by the incident light reach the junction surface, and the discontinuous portion 11 generated in the i layer
It has the disadvantage that it recombines with the holes that reach it and does not function as a carrier. So 1 in Figure 3 is the conduction band,
2 is a forbidden band, 3 is a Fermi level, 4 is a valence band, 5 is an electron, 6 is a p layer, 7 is a layer, 8 is a hole, and the p layer material a-8iz- that falls into this configuration xCx: H(0<x<
1) the work function is φp1 and the forbidden band width is EJp, and the work function φi and forbidden band width EIi of the one-layer material a-8i:H
Below is a comparison! 11. (Relationships like 21 (
In addition to rC, the lattice constants of the p layer and the iφp〉φi(1) Egp＞E, l/ i f21 layer are different, so the valence band and conduction band of the p-layer and i-layer junction have differences as shown in 11. As the discontinuous surface of the energy hand is generated, the interface ratio and potential are increased as shown in 9, and the photoelectrons generated in the p layer flow to the junction surface because no electric field is applied, and holes are generated. It moves to reconnect with the
本発明は前述した従来の光電変換器の欠点を改良づ′る
ことに係り、その目的とするＣところは、開放電圧が高
く、光電変換効率の大きな光電変換器を提供することに
ある。The present invention relates to improving the above-mentioned drawbacks of the conventional photoelectric converter, and its objective C is to provide a photoelectric converter with a high open-circuit voltage and high photoelectric conversion efficiency.
本発明は光電変換装置の半導体のうちｐ層の禁制帯幅Ｅ
、９１）をｐ層の厚み方向に徐々に小さくして、ｉ層と
の接合面でｉ層の禁制帯幅ＥＪ’ｉの値にできるたけ近
ずけることによって、第２図に示すようにｐ層とｉ層の
接合面におけるエネルギーノ１ンドを価電子帯および伝
導帯のいずれにおいても連続にすると共に、ｐ層内で光
励起した電子に電界がかかるようにして目的を達成した
ものである。すなわち禁制帯幅Ｅｇｐをｐ層の厚み方向
に徐々に小さくするために、半導体ｐ層材料のａ −８
ｉ１−ｘＣｘ：Ｈ（０＜Ｘ＜１）のＸ値をｐ層の厚み方
向ｉ層向に小さくＬｉ層との接合面ではｉ層の禁制帯幅
ＥＪｉとＥｇｐをＰｉ ？！同じにするようにＸを調整
してｐ層を蒸着堆積したものである。In the present invention, the forbidden band width E of the p layer of the semiconductor of the photoelectric conversion device is
. This goal was achieved by making the energy node at the junction between the p-layer and i-layer continuous in both the valence band and the conduction band, and by applying an electric field to the photoexcited electrons in the p-layer. . That is, in order to gradually reduce the forbidden band width Egp in the thickness direction of the p-layer, a -8 of the semiconductor p-layer material is
The X value of i1-xCx:H (0<X<1) is made smaller in the thickness direction of the p layer in the direction of the i layer, and the forbidden band widths EJi and Egp of the i layer are changed to Pi? ! A p-layer is deposited by vapor deposition while adjusting X so as to be the same.
以下本発明の実施例を第１図に従って説朗する。 Embodiments of the present invention will be explained below with reference to FIG.
カラス基板１２の上にイシジウムとスズの酸化物を蒸着
源にして電子ヒーム蒸着法によシ膜厚７００Ｘの透明電
極膜１３を形成し、その上にモノシランとジポランとメ
タンの混合カスを使いプラズマＣＶＤ法で膜厚１００Ｘ
の９層１４を形成するが、この９層堆積過程においてメ
タンガスの流量（ＱＣＨ４（ＳＣＣＭ））をモノシラン
の流量Ｑ ＳｉＨ４＜５ｃｃｙｔｙとの比（ＱｃＨ４／
Ｑ８１Ｈ４）で９９から０．２５まで直線的に変化させ
ることによって、ａ−８ｉｌ−ｘＣｘ ： ＨのＸの値
’ｚ０．９から０．２まで連続的に変った物質を積層す
る。つぎにモノシランカスを使い、プラズマＣＶＤ蒸着
法によって膜厚５０００Ｘの１７１１５ｉｐ層の上に形
成する。さらにモノシランとホスフィシの混合ガスを使
って、プラズマＣＶＤ蒸着法によって３００Ｘ厚のｎ層
１６をｉ層上に形成する０つぎにｎ層の上に電子ビーム
蒸着法によって１μｍ厚のアルミニウム膜１７を形成し
た。最後に透明電極１３とアルミニウム電極１７に銀ペ
ース日８．１９で餉ａをつなぎ半導体光電変換装置全完
成した。A transparent electrode film 13 with a thickness of 700X is formed on a glass substrate 12 by electron beam evaporation using isidium and tin oxide as a deposition source. Film thickness 100X by CVD method
In this nine-layer deposition process, the ratio of the methane gas flow rate (QCH4 (SCCM)) to the monosilane flow rate QSiH4<5ccyty (QcH4/
By linearly varying Q81H4) from 99 to 0.25, materials in which the value of X'z of a-8il-xCx:H was continuously varied from 0.9 to 0.2 are stacked. Next, using monosilane gas, it is formed on the 17115 ip layer with a film thickness of 5000× by plasma CVD deposition method. Furthermore, using a mixed gas of monosilane and phosphide, a 300X thick n-layer 16 is formed on the i-layer by plasma CVD deposition. Next, a 1 μm-thick aluminum film 17 is formed on the n-layer by electron beam evaporation. did. Finally, the transparent electrode 13 and the aluminum electrode 17 were connected with a silver paste on August 8, 19, to complete the semiconductor photoelectric conversion device.
実施例で示した第１図の光電変換装置のｐ層とｉ層の接
合面は第２図のようなエネルギーハシドを形成する。本
実施例によれはｐ層とｉ層の接合面における禁制帯幅は
／１丁同じであるので、光電変換によって生じた電子と
正孔には電界がかかり、再結合が抑制されてキャリアと
して働くために、外部へ取り出せる発電エネルギー量は
従来例よりも大きくなる効果を得た。したがって光電変
換効率も同上する〇
本実施例と従来の如き禁制帯幅が、厚さ方向に不変のｐ
層を使用したものの特性を比較して表１に示す。The junction surface between the p layer and the i layer of the photoelectric conversion device shown in FIG. 1 shown in the example forms an energy hasid as shown in FIG. 2. In this example, since the forbidden band width at the junction between the p-layer and the i-layer is the same as /1, an electric field is applied to the electrons and holes generated by photoelectric conversion, suppressing recombination and converting them into carriers. The effect is that the amount of generated energy that can be taken out to the outside for work is greater than that of the conventional example. Therefore, the photoelectric conversion efficiency is also the same as above. The forbidden band width of this embodiment and the conventional method is
Table 1 shows a comparison of the characteristics of those using the layers.
表１
本実施例においては、開放電圧、短絡電流、光電変換効
率のいずれにおいても従来例よりも高く優れており、本
発明の効果が実証されている。Table 1 In this example, the open circuit voltage, short circuit current, and photoelectric conversion efficiency are all higher and superior to the conventional example, proving the effects of the present invention.
々お、本発明のｐｍにおりるａ −Ｓ １ｌ−ｚＣｘ
Ｐ２Ｉ質のＸ値は、ｐ層の厚みの１層方向へはじめにＸ
二０．９．ｉ層との接合側最終値がｘ＝０．２であれは
、途中の変化の仕方が厚みに刻して直線的あるいは非直
線的のいずれでも本発明の効果が得られる０々おＸの値
がはじめに０．９以上終りが０．２以上の範囲であって
もよい。In the pm of the present invention, a-S 1l-zCx
The X value of P2I quality is
20.9. If the final value of the bonding side with the i layer is x = 0.2, the effect of the present invention can be obtained even if the way of change in the middle is linear or non-linear depending on the thickness. The value may range from 0.9 or more at the beginning to 0.2 or more at the end.
第１図は本発明を実施した光電変換装置の一実施例断面
図である。
第２図は本発明を実施した場合における半導体光電変換
装置の、ｐ層とｉ層の接合面の厚み方向におけるエネル
ギーバンドのパターンである。
第３図は従来の半導体光電変換装置の、ｐ層とｉ層の接
合向のｊ厚み方向におけるエネルギーバンドのパターン
である。
１２・・・カラス基板、１３・・・透明電極、６．１４
・・・ｐ形半導体層、７．１５・・・ｉ形半導体層、１
６・・・ｎ形半導体層、１７・・・アルミニウム電極出
願人 日立マクセル株式会社
代表者 永 井 厚
滅 −FIG. 1 is a sectional view of an embodiment of a photoelectric conversion device embodying the present invention. FIG. 2 shows an energy band pattern in the thickness direction of the junction surface between the p-layer and the i-layer in a semiconductor photoelectric conversion device in which the present invention is implemented. FIG. 3 shows an energy band pattern in the j-thickness direction in the junction direction of the p-layer and i-layer of a conventional semiconductor photoelectric conversion device. 12... Glass substrate, 13... Transparent electrode, 6.14
...p-type semiconductor layer, 7.15...i-type semiconductor layer, 1
6... N-type semiconductor layer, 17... Aluminum electrode Applicant Hitachi Maxell Co., Ltd. Representative Atsume Nagai -
Claims (3)
、該接合の片側の半導体ａの禁制帯幅をＥｇａ、反対側
の半導体すの禁制恰幅をＥｇｂとして、Ｅ、！７ａ ＞
Ｅ、！ｌｉ’ｂとなる半導体ａの厚み方向のＥｇａＯ
値が接合面に向って徐々に小さくなるようにし、接合面
ではほぼＥＪ’ａ二Ｅ、９ｂであるように構成されたこ
とを特徴とする半導体光電変換装置。(1) In a semiconductor photoelectric conversion device using a heterojunction, where Ega is the forbidden band width of the semiconductor a on one side of the junction, and Egb is the forbidden band width of the semiconductor a on the other side, E,! 7a>
E,! EgaO in the thickness direction of semiconductor a which becomes li'b
1. A semiconductor photoelectric conversion device characterized in that the value gradually decreases toward the junction surface, and is approximately EJ'a2E,9b at the junction surface.
ｉλ−Ｘ ＣＸ：Ｈ（０＜ｘ＜ １ ）で構成されるｐ
形半導体で、半導体すが不純物を含まないｉ形半導体で
アル、半導体ａ−８ｉｌ−ｘＣｘ ：Ｈ（０＜ｘ〈１）
層の厚み方向の接合面方向にＸの値が徐々に小さくなっ
ていることを特徴とする特許請求の範囲第１項記載の半
導体光電変換装置。(2) The semiconductor is an amorphous substance, and the semiconductor a is a −8
p composed of iλ−X CX:H (0<x<1)
It is an i-type semiconductor that does not contain impurities, and it is an i-type semiconductor that does not contain impurities.
2. The semiconductor photoelectric conversion device according to claim 1, wherein the value of X gradually decreases in the direction of the bonding surface in the thickness direction of the layer.
９から０．２まで徐々に小さくなっていることを特徴と
する特許請求の範囲第２項記載の半導体光電変換装置。(3) The X value in the thickness direction of semiconductor a is 0.
3. The semiconductor photoelectric conversion device according to claim 2, wherein the semiconductor photoelectric conversion device is gradually reduced in size from 9 to 0.2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100799A JPS60245185A (en) | 1984-05-18 | 1984-05-18 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100799A JPS60245185A (en) | 1984-05-18 | 1984-05-18 | Semiconductor photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60245185A true JPS60245185A (en) | 1985-12-04 |
Family
ID=14283446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59100799A Pending JPS60245185A (en) | 1984-05-18 | 1984-05-18 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60245185A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6348858A (en) * | 1986-08-19 | 1988-03-01 | Fuji Electric Co Ltd | Optical sensor array |
| JPH0260174A (en) * | 1988-08-04 | 1990-02-28 | Natl Sci Council Republic Of China | Amorphous sic/si three-color detector |
-
1984
- 1984-05-18 JP JP59100799A patent/JPS60245185A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6348858A (en) * | 1986-08-19 | 1988-03-01 | Fuji Electric Co Ltd | Optical sensor array |
| JPH0260174A (en) * | 1988-08-04 | 1990-02-28 | Natl Sci Council Republic Of China | Amorphous sic/si three-color detector |
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