JPS60243902A - High dielectric constant porcelain composition - Google Patents

High dielectric constant porcelain composition

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Publication number
JPS60243902A
JPS60243902A JP59097444A JP9744484A JPS60243902A JP S60243902 A JPS60243902 A JP S60243902A JP 59097444 A JP59097444 A JP 59097444A JP 9744484 A JP9744484 A JP 9744484A JP S60243902 A JPS60243902 A JP S60243902A
Authority
JP
Japan
Prior art keywords
dielectric constant
oxide
high dielectric
temperature
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59097444A
Other languages
Japanese (ja)
Inventor
渡部 武栄
半田 喜代二
洋八 山下
光雄 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Toshiba Corp
Original Assignee
Marcon Electronics Co Ltd
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd, Toshiba Corp filed Critical Marcon Electronics Co Ltd
Priority to JP59097444A priority Critical patent/JPS60243902A/en
Publication of JPS60243902A publication Critical patent/JPS60243902A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 「発明の技術分野」 本発明は、高誘電率磁器I]成物に係わり、特に複合酸
化物の固相反応によって合成された低温焼結タイプの高
誘電率相層ヒラミック]ンデンザに適したものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to high-permittivity porcelain I] compositions, and in particular to low-temperature sintered type high-permittivity phase layers synthesized by solid-phase reaction of complex oxides. It is suitable for Hiramik] Ndenza.

[従来の関連技術どその問題貞] 従来、高誘電率磁器組成物としては、ヂタン酸バリウム
(B a T + 03 >を主成分とし、さらにジル
コン酸カルシウム(CaZr03)、ヂタン酸カルシウ
ム(CaTi□っ〉などを加えた複合誘電体磁器材料が
広く用いられでいる。これらの磁器材料は通常1200
〜1400℃の高温で焼結しなりればならないため、特
に積層セラミックコンデンザの揚台には、この焼結温痕
に適した内部電極として、主成分が員金屈である金、白
金。
[Problems with conventional related technology] Conventionally, high dielectric constant porcelain compositions have barium ditanate (B a T + 03 > as a main component), and calcium zirconate (CaZr03) and calcium ditanate (CaTi□ Composite dielectric porcelain materials are widely used.These porcelain materials usually have a
Since sintering must be carried out at a high temperature of ~1400°C, gold and platinum, whose main component is metallurgical, are used as internal electrodes suitable for this sintering temperature, especially for the platform of multilayer ceramic capacitors.

パラジウムまたは、これらの合金を使用しなければなら
ないという欠点を有していた。ざらに高温焼結であるた
め、多くの電力、ガスなどの熱エネルギーを必要とし焼
成炉および焼成サヤなどの熱劣化が著しく、コスト上昇
の一因となる欠点も存在していた。
It has the disadvantage that palladium or an alloy thereof must be used. Because it is sintered at a relatively high temperature, it requires a lot of thermal energy such as electric power and gas, which causes significant thermal deterioration of the firing furnace and firing pods, which also has the disadvantage of contributing to increased costs.

このため銀等を主成分とする安価な内部電極を用いるた
め、1000℃以下の低温で焼結が可能であり、かつ誘
電率が大きく、誘電体損失が小ざい高誘電?磁器組成物
の開発が望まれていた。
For this reason, since we use inexpensive internal electrodes mainly composed of silver, etc., we can sinter at a low temperature of 1000°C or less, and the dielectric constant is large and the dielectric loss is small. There was a desire to develop a porcelain composition.

これらの要求に対して、特開昭51−87700号公報
に示されているようなPb(Fe2/3W1/3)X−
(F01/2Nb1/2)1−×03(xが02≦ 0
5)の材料が知られている。また、特開昭53−155
91号公報には、この材料系にSiOを加えることも試
みられている1、シかしながら、この材料系においては
、誘電体損失(t: a nδ)の温度特性が悪く、絶
縁抵抗も小ざい。ざらに機械的強度が弱く2割れ、欠1
ノが発生しやすいため積層セラミックコンデンサを作成
した場合、実用上大きな問題となっていた。
In response to these demands, Pb(Fe2/3W1/3)X-
(F01/2Nb1/2) 1-×03 (x is 02≦0
5) Materials are known. Also, JP-A-53-155
In Publication No. 91, an attempt was made to add SiO to this material system. However, in this material system, the temperature characteristics of dielectric loss (t: a nδ) are poor and the insulation resistance is also low. Small. Roughly weak mechanical strength, 2 cracks, 1 chip
This has been a major practical problem when manufacturing multilayer ceramic capacitors because of the tendency for this to occur.

[発明の目的1 上記の欠点を改良し、誘電率、絶縁抵抗が大きく、かつ
その焼成温度による依存性が小さく、1anδの温度特
性および機械的強度に優れ、さらに高温負荷および耐湿
性を改良した低湿焼結タイプの高誘電率磁器組成物を9
供リ−ることを目的とする。
[Objective of the invention 1] The above-mentioned drawbacks have been improved, the dielectric constant and insulation resistance are large, the dependence on firing temperature is small, the temperature characteristics of 1 an δ are excellent, the mechanical strength is excellent, and the high temperature load and moisture resistance are improved. 9 low humidity sintered type high permittivity porcelain composition
The purpose is to provide.

[発明の概要1 本発明は、酸化バリウム(BaO)、M化カルシウム(
Cab)の少なくとも1種、酸化鉛(PbO)、酸化鉱
(F e 203 ) 1M化二Aブ(Nb205)、
酸化タングステン(WO3)。
[Summary of the invention 1 The present invention provides barium oxide (BaO), calcium chloride (
At least one type of lead oxide (PbO), oxide ore (F e 203 ), 1M diAb (Nb205),
Tungsten oxide (WO3).

酸化銅(Cub)から4rす、xPb(トe1/2”b
 ) O−yM (CU 1/2 W1/2 ) 03
 (Iこ1/23 だしMはBa、Caの少なくとも1種)で表わしたとき
、X=90〜99.5.y=0.5〜10の基本組成物
100中ti%にス・1し、添加物とし−C酸化マグネ
シウム(MgO)、Flu化ニッケル(N10)をそれ
ぞれ0.01〜1.0重量%含有さゼた高誘電率磁器組
成物および該高誘電率磁器組成物にさらに添加物として
酸化マンガン(MnO)を0.01〜1.0重量%含有
させたものである。
From copper oxide (Cub) to 4r, xPb (toe1/2”b)
) O-yM (CU 1/2 W1/2) 03
(Iko1/23 Dashi M is at least one of Ba and Ca), X=90 to 99.5. Ti% of the basic composition 100 with y = 0.5 to 10 is added to Ti%, and -C magnesium oxide (MgO) and nickel fluoride (N10) are each added in an amount of 0.01 to 1.0% by weight as additives. The high dielectric constant ceramic composition and the high dielectric constant ceramic composition further contain 0.01 to 1.0% by weight of manganese oxide (MnO) as an additive.

次に本発明の組成の限定理由を述べる。まイ゛。Next, the reasons for limiting the composition of the present invention will be described. Okay.

xPb (Fe1/2 Nb1/2 )−yM (CL
J y2 W172 ) 03 テreaツ’i:5 
レルFA本1in成物のXが90〜99.5.Vが0.
5〜10の組成範囲に限定した理由は、X=90未満で
は常温にお(プる誘電率が低干し、コンデン+lJ月利
として適さないためであり、V=0.5未満で(31゜
tanδを低下けしめ、低温焼結に寄LjJるM (C
u1/2W1/2 )03(M:Ba、 Ca)の効果
がほとんと1ツられず、y=10以上Cは誘電率が低下
し、tanδが増加覆るためである。またMgOの含有
量を0.01〜1.0車量%に限定した理由は、0.0
1重量%未満では9機械的強度、絶縁抵抗の向上が期待
できず、1.0Φ吊%を越えた場合には誘電を、絶縁抵
抗が低下し。
xPb (Fe1/2 Nb1/2)-yM (CL
J y2 W172 ) 03 TV'i:5
X of RelFA book 1 inch product is 90-99.5. V is 0.
The reason for limiting the composition range to 5 to 10 is that when X = less than 90, the dielectric constant at room temperature is low and it is not suitable for condensate + lJ monthly yield, and when V = less than 0.5 (31 M (C
This is because the effect of u1/2W1/2)03(M:Ba, Ca) is hardly affected, and when y=10 or more, C decreases the dielectric constant and increases tan δ. Also, the reason why the MgO content was limited to 0.01 to 1.0% by volume is 0.0%.
If it is less than 1% by weight, no improvement in mechanical strength or insulation resistance can be expected, and if it exceeds 1.0% by weight, dielectric and insulation resistance will decrease.

かつ十分な焼結がなされず、比重も小ざく実質的に焼結
温度が高くなるためである。NiOの含有量を0.01
〜1.0重量%に限定した理由は。
This is also because sufficient sintering is not achieved, the specific gravity is low, and the sintering temperature becomes substantially high. NiO content 0.01
The reason why it was limited to ~1.0% by weight.

0.01重量%未満では、絶縁抵抗の焼成湿度による依
存性が改善できるというNiOの効果がほとんど表われ
ず1.0重間%を越えた場合には十分な焼結がなされず
、誘電率および絶縁抵抗の低下を拾ぎ、さらにl: a
 n 6が増加しU L、 J:うためで゛ある。さら
にMnOの含有量を0,01〜1゜0重量%に限定した
理由は、0.01重11)%未満では、tanδの温度
性+(1を改善し9拍層−1ンデンザとしたどさの高湿
fJ’l+F特性a3よび耐湿特性を改善するMnOの
効果がほとんど表われず。
If it is less than 0.01 wt %, the effect of NiO, which can improve the dependence of insulation resistance on firing humidity, will hardly appear, and if it exceeds 1.0 wt %, sufficient sintering will not occur and the dielectric constant will decrease. and pick up the decrease in insulation resistance, and further l: a
n 6 increases and UL, J: can be used. Furthermore, the reason for limiting the MnO content to 0.01 to 1.0% by weight is that if it is less than 0.01% by weight, the thermal properties of tan δ + The effect of MnO on improving the high humidity fJ'l+F characteristics a3 and the moisture resistance characteristics was hardly exhibited.

1.0重量%を越えた場合に【、U t: a nδが
増加り−るためである。
This is because when the content exceeds 1.0% by weight, [, U t: an δ] increases.

[発明の実施例] 本発明に係わる高誘電率磁器組成物は9例えば以下のご
′どく製造される。まづ′、出光原斜として。
[Embodiments of the Invention] A high dielectric constant ceramic composition according to the present invention is manufactured, for example, as follows. Mazu′, as Idemitsu Gensaku.

PI)(、)、Fe OWOっ、Nb2O5,。PI) (,), Fe OWO, Nb2O5,.

23′ 。23′.

CaC0Ba、C03,Cub、MgCO3゜3゜ M n CO3,N i O等を用い、第1表に示した
配合比になるように秤tロシた。これらの原料をボール
ミルで湿式混合した後、700〜800℃℃焙焼を行(
,再びボールミルで粉砕し、乾燥した粉末にP、VL 
A等のバインダーを添加し、約0゜3 ton / c
iの圧力で直W’ 17 mm中、厚み1.2mmの円
板状試料を作成した。これらの成形体をマグネシア製の
4J 47に入れ酸系界17JI気中Jした131空気
中で850〜950℃2時間の焼成後、焼結体に銀ペー
ストを塗布し600〜700℃で焼付り測定試料とした
CaC0Ba, C03, Cub, MgCO3゜3゜M n CO3, N i O, etc. were weighed and weighed so as to have the compounding ratios shown in Table 1. After wet-mixing these raw materials in a ball mill, roasting is performed at 700-800℃ (
, P and VL are ground again in a ball mill to form a dry powder.
Add binder such as A, approximately 0゜3 ton/c
A disk-shaped sample with a straight W' of 17 mm and a thickness of 1.2 mm was prepared at a pressure of i. These molded bodies were placed in a 4J47 made of magnesia and fired for 2 hours at 850 to 950°C in 131 air containing an acidic atmosphere, and then silver paste was applied to the sintered body and baked at 600 to 700°C. This was used as a measurement sample.

ここで誘電率およびjanδは9周波数1KllZで測
定し、第1表に示・ノー。
Here, the dielectric constant and jan δ were measured at 9 frequencies and 1 KllZ, and are shown in Table 1.

(以下余白) 第1表において参考例は2本発明の範囲外のものであり
比較のため示した1゜ 第1表より明らかなように本発明範囲内のものは、誘電
率が大きいもので約21.000−30゜000の高い
飴を示し、誘電体損失(1、anδ)は0.3〜0.8
%程磨の極めて小さな値を示しながら、900℃以rで
の焼成が可能である。
(Leaving space below) In Table 1, two reference examples are outside the scope of the present invention, and are shown for comparison.As is clear from Table 1, the examples within the scope of the present invention have a large dielectric constant. It shows a high temperature of about 21.000-30°000, and the dielectric loss (1, an δ) is 0.3-0.8
It is possible to perform firing at a temperature of 900° C. or higher while exhibiting an extremely small polishing value of about 100%.

さらに第1図は実施例17.第2図は実施例44、第3
図は実施例71.第4図は実施例98のそれぞれの誘電
率およびj a rTδの温度特性を示した。また、参
考例として参考例2 A5 J:び44を第5図に、参
考例26を第6図に、参考例68を第7図に、イれぞれ
の誘゛市率およびt a nδの温度特性を示づ、1 第1表および第1図乃至第7図から明らかなJ、うに9
本発明になる磁器組成物はPb(Fe1/2Nb1/2
)03にM (CLJ 172 W1/2 ) 03 
(M :Ba、Ca)が固溶寸よことにより、常温にお
(づる誘電率がPb(Fe Nb )0 が101/2
 1/2 3 Q mo 1%の場合に対し3.5〜5倍と飛躍的に向
上する1、さらにlanδが約1/10ど大幅に低下し
ていることがわかる。ざlうに少量のMす0゜NiOの
添加は、化抵抗を大幅に高めるばかりでなく、参考例4
.5,6J5よび46.47.48に示したような、炉
、成渇度がわりか40°C稈曳高くなると比抵抗が4:
ミ激に減少りるとい−う依存性を大幅に改善Cきること
がわかる1、これは、 r?i、 Ei’、: lL’
rに(15いて電気炉の」−20°C稈HQのとlli
庶設定I−ラ(Xかあっても、絶縁抵抗の安定しIc製
品を製造Jることが可能C゛あることを意味している。
Furthermore, FIG. 1 shows Example 17. Figure 2 shows Example 44, 3
The figure shows Example 71. FIG. 4 shows the temperature characteristics of the dielectric constant and j a rTδ of Example 98. In addition, as reference examples, reference example 2 A5 J: and 44 are shown in FIG. 5, reference example 26 is shown in FIG. 6, and reference example 68 is shown in FIG. 7. J, which is clear from Table 1 and Figures 1 to 7, shows the temperature characteristics of 9
The ceramic composition of the present invention is Pb(Fe1/2Nb1/2
) 03 to M (CLJ 172 W1/2) 03
Due to the solid solution size of (M: Ba, Ca), the dielectric constant of (Pb(FeNb)0 at room temperature is 101/2
It can be seen that 1 is dramatically improved by 3.5 to 5 times compared to the case of 1/2 3 Q mo 1%, and that lan δ is significantly reduced by about 1/10. Addition of a small amount of M20°NiO to the sea urchin not only significantly increases the corrosion resistance but also
.. As shown in 5, 6J5 and 46.47.48, the specific resistance increases by 4:
It can be seen that the dependence can be greatly improved by dramatically reducing the amount of stress.1 This means that r? i, Ei',: lL'
(15) -20°C of electric furnace and lli of culm HQ
This means that even if there is a general setting I-ra (X), it is possible to manufacture IC products with stable insulation resistance.

また、少t11のMnOの添加は、低温(−F) 5 
’(: )にJ−3()る1−a nδを1/2から1
 / 5と大幅にflf Fさけ。
Furthermore, the addition of MnO at a low temperature (-F) 5
'(: ) to J-3() 1-a nδ from 1/2 to 1
/ 5 and significantly flf F salmon.

i!’N品(125°C)においても1.’ E) r
lδを2/3から1/2の値まで低1;さ1遍でいるこ
とがわかる。
i! 'N product (125°C) also has 1. ' E) r
It can be seen that lδ remains constant from 2/3 to 1/2.

MQO,N iO,Mr)0のそ4’L ’t、l’れ
の添加1’(が0゜01〜1.0重量%の1へ囲での1
1cq下においてt、↓。
MQO, N iO, Mr) 0 so 4'L 't, l' Addition 1' (is 0°01 to 1.0% by weight of 1 to 1)
t below 1 cq, ↓.

それぞれが賞11独に作用し特性を向上させており。Each works on the 11 prizes and improves their characteristics.

お互いの長所を打d!jづJ、うな作用tま仝く無いと
いう人込な特徴を右していることがわかる。
Take advantage of each other's strengths! It can be seen that this is due to the characteristic of a crowd that there is absolutely no effect.

次に機械的強度の計1+Iliには曲げ強度を用いた。Next, bending strength was used for the total mechanical strength 1+Ili.

曲げ作出、の測定は、得られた誘電体セラミック円板を
厚さ1 mmまで両面研削を行って鏡面にイ1−!げ。
To measure bending, the resulting dielectric ceramic disc was ground on both sides to a thickness of 1 mm to give it a mirror surface. Ge.

その後にダイヤモンドカッターC各回様の中心部分から
幅3 mmの試料板を切出し、切断面の傷のLi2費を
取りのぞくために切断面をSiCサンドペーパーで順次
800#→1500#→2000 #ど研磨したのらエ
ツジを丸めで仕上げ、インス1ヘロン万能試験機を用い
て三点曲げ法で行った、1曲げ強[(抗折力)Gは次式
による。
After that, a sample plate with a width of 3 mm was cut from the center of each round of the diamond cutter C, and the cut surface was sequentially polished with SiC sandpaper from 800# to 1500# to 2000# to remove Li2 damage caused by scratches on the cut surface. After that, the edges were finished by rounding, and the bending strength was 1 bending [(transverse rupture strength) G is according to the following formula.

Pml 抗折力−−□−−−−−−−− d2W ここで )) m:最大破壊荷1n(Ky)1:支点間
圧1IIIt (cm ) d:試第1の厚さ (cm ) W:試料の幅 (cm ) である。
Pml Transverse rupture force −−□−−−−−−−− d2W where )) m: Maximum breaking load 1n (Ky) 1: Pressure between fulcrums 1IIIt (cm) d: First test thickness (cm) W : Width of the sample (cm).

本発明の実1に例のデータを参考例と共に第2表に示す
Data of Example 1 of the present invention are shown in Table 2 together with reference examples.

第 2 .1、 この結果第2表から明らかなごとく少toのMgO,N
iOを添加することにより1機械的強度も大幅に改善で
きることが明らかである。この事実は1回路基板上に直
接半田付けされるチップ部品として非常に右利である。
Second. 1. As is clear from the results in Table 2, a small amount of MgO,N
It is clear that the mechanical strength can also be significantly improved by adding iO. This fact is very advantageous for chip components that are directly soldered onto a circuit board.

な、15,1.0重量%以上(7)MrlO,Mg’O
15.1.0% by weight or more (7) MrlO, Mg'O
.

NiOを添加するど機械的強度は向上しない。Adding NiO does not improve mechanical strength.

次に高温負611試躾d3よび耐渥fL試験を行った。Next, a high temperature negative 611 test d3 and a splash resistance fL test were conducted.

この高温負荷試験d3よび耐湿性試験に用いた積K・7
コンデン1すは、焙焼後の粉体に例えば、プリビニルブ
チラール、ポリエチレングリコール、オクヂルフタレー
1〜等のバインダ′−ど1−リフに1−ルエブーレン、
■チルアルニ1−ル等の溶剤を適当量刑え。
Product K・7 used for this high temperature load test d3 and moisture resistance test
The condensate is mixed with a powder after roasting, for example, with a binder such as privinyl butyral, polyethylene glycol, or octyl phthalate.
■Use an appropriate amount of solvent such as tylarniol.

通常のスラリ〜を作成し、ドクタープレイド装■を用い
て50μmJ9みのシー1〜を作成し、電極を印刷し積
層、切[Diの後に焼成し、外部電極を取りつりで4.
5X3.2mmで1μFの積層升ツブ形コンデンザを作
成した。この積層コンデンリ−は100個に対して日本
電子機械エイ3会規格RC−3698B電子機器用積層
フンjンリ(チップ形)に示されている1旧1荷試験J
3よび耐湿性試験を行い、試8後の故障率および容量の
変化を調へそれぞれ第3表および第4表に示す。
4. Create a normal slurry ~, create a 50 μm J9 sheet 1~ using a Dr. Plaid device, print electrodes, laminate, cut [Di, then bake, and remove the external electrodes.
A laminated cubic capacitor of 5×3.2 mm and 1 μF was fabricated. This laminated condenser is tested for 100 pieces according to the 1 old single load test J specified in the Japan Electronics Machinery Association Standard RC-3698B Laminated Funnel for Electronic Equipment (chip type).
3 and moisture resistance tests were conducted, and the failure rate and change in capacity after test 8 are shown in Tables 3 and 4, respectively.

なお、各試験は上記規格に基づき、高温負荷試験は50
vDC印加状fL125℃x 1o o o ay間後
の特性を、また、′M湿+9−試験は25 V D、 
C印加状態、40℃、95%R111500時間後の特
性を評価した。
In addition, each test is based on the above standards, and the high temperature load test is 50
The characteristics after vDC application fL 125℃
The characteristics were evaluated after 111500 hours under C application condition at 40° C. and 95% R111.

第 3 表 (以下余白) 第4表 (以下余白) 第3表および第4表から明らかなごとく少量のMnOを
添加覆ることにより1人幅に故障率が改善され容(6)
の変化率も小さくなり、高温負荷特性。
Table 3 (white space below) Table 4 (white space below) As is clear from Tables 3 and 4, adding a small amount of MnO improves the failure rate by one person (6).
The rate of change in is also smaller, which improves the high temperature load characteristics.

耐湿性に優れていることが確認された1、なお、上記実
施例では、出発原料として酸化物。
1 was confirmed to have excellent moisture resistance. In the above examples, oxides were used as starting materials.

炭酸化物を用いたが、他に“高温において酸化物に代わ
るシュウ酸化物等の有機金属化合物を用いても同様の効
果が得られることは言うまでもない。
Although carbonates were used, it goes without saying that similar effects can be obtained by using other organometallic compounds such as oxal oxides in place of oxides at high temperatures.

[発明の効果] 以上のごとく本発明では、誘電率が大きく。[Effect of the invention] As described above, in the present invention, the dielectric constant is large.

tanδの温度特性2機械的強疫に優れ、特に少量のM
qO,NiOを含有さゼることにより、比抵抗を大幅に
向上させ、かつ、比抵抗の焼成温度による依存性を大幅
に改善することが可能であり。
Temperature characteristics of tan δ 2 Excellent mechanical strength, especially when a small amount of M
By containing qO and NiO, it is possible to significantly improve the specific resistance and also to significantly improve the dependence of the specific resistance on the firing temperature.

さらに少量のMnOを含有さけることにJ:り高温負荷
特性および耐湿性を改善した低温焼結タイプの高誘電率
磁器組成物が得られ、■業上極めて優れたものと言える
Furthermore, by avoiding the inclusion of a small amount of MnO, a low-temperature sintering type high-permittivity ceramic composition with improved high-temperature load characteristics and moisture resistance was obtained, which can be said to be extremely excellent in the industry.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第4図は本発明に係わる高誘電率磁器組成物の
特性例を示で曲線図、第5図・〜第7図は参考例どして
の8誘6S率磁器組成物の特性例を示す曲線図である。 代理人弁理士 則近憲佑(はがi名) 温浸(OO) 温度(0り 温 )艷 (0(、ノ ル洟(0c)
Figures 1 to 4 are curve diagrams showing characteristic examples of high dielectric constant ceramic compositions according to the present invention, and Figures 5 to 7 are curve diagrams of 8 dielectric constant porcelain compositions as reference examples. It is a curve diagram showing an example of characteristics. Representative patent attorney Norichika Kensuke (Hagai name) Onsen (OO) Temperature (0りん) 艷 (0(, Noritake (0c)

Claims (1)

【特許請求の範囲】[Claims] (1)酸化バリウム、酸化カルシウムの少なくとも1種
、S化鉛、酸化鉄、酸化ニ第1.M化タングステン、酸
化銅からなり。 XPb(F81/2Nb1/2)03−yM (Cu 
172 W1/2 ) 03(ただしMは[3a、 C
aの少なくとも1種)で表わしたとき、x=90〜99
.5.y=0.5〜10の基本組成物100重量%に対
し。 添加物として酸化マグネシウム、酸化ニッケルをそれぞ
れ0.01〜1.0重相%含有させたことを特徴とする
高誘電率磁器組成物。 (2、特許請求の範囲第(1)項記載の高誘電率磁器組
成物において、添加物としてさらに酸化マンガンを0,
01〜1.0重量%含有ざt!1=ことを特徴とする高
誘電率磁器組成物。
(1) At least one of barium oxide, calcium oxide, lead sulfide, iron oxide, and at least one of calcium oxide. Consists of tungsten oxide and copper oxide. XPb(F81/2Nb1/2)03-yM (Cu
172 W1/2 ) 03 (However, M is [3a, C
at least one type of a), x = 90 to 99
.. 5. Based on 100% by weight of the basic composition with y=0.5-10. A high dielectric constant ceramic composition containing magnesium oxide and nickel oxide as additives in an amount of 0.01 to 1.0% in heavy phase, respectively. (2. In the high dielectric constant ceramic composition described in claim (1), 0,
Contains 01-1.0% by weight! 1=A high dielectric constant ceramic composition characterized by the following.
JP59097444A 1984-05-17 1984-05-17 High dielectric constant porcelain composition Pending JPS60243902A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59097444A JPS60243902A (en) 1984-05-17 1984-05-17 High dielectric constant porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097444A JPS60243902A (en) 1984-05-17 1984-05-17 High dielectric constant porcelain composition

Publications (1)

Publication Number Publication Date
JPS60243902A true JPS60243902A (en) 1985-12-03

Family

ID=14192498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097444A Pending JPS60243902A (en) 1984-05-17 1984-05-17 High dielectric constant porcelain composition

Country Status (1)

Country Link
JP (1) JPS60243902A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210613A (en) * 1986-03-12 1987-09-16 松下電器産業株式会社 Laminated capacitor element
JPH02153512A (en) * 1988-12-05 1990-06-13 Matsushita Electric Ind Co Ltd Laminated capacitor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210613A (en) * 1986-03-12 1987-09-16 松下電器産業株式会社 Laminated capacitor element
JPH0528891B2 (en) * 1986-03-12 1993-04-27 Matsushita Electric Ind Co Ltd
JPH02153512A (en) * 1988-12-05 1990-06-13 Matsushita Electric Ind Co Ltd Laminated capacitor element

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