JPS60243295A - Manufacture of stamper - Google Patents

Manufacture of stamper

Info

Publication number
JPS60243295A
JPS60243295A JP9915884A JP9915884A JPS60243295A JP S60243295 A JPS60243295 A JP S60243295A JP 9915884 A JP9915884 A JP 9915884A JP 9915884 A JP9915884 A JP 9915884A JP S60243295 A JPS60243295 A JP S60243295A
Authority
JP
Japan
Prior art keywords
stamper
substrate
resist
pattern
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9915884A
Other languages
Japanese (ja)
Inventor
Iwao Tsugawa
津川 岩雄
Minoru Nakajima
実 中島
Akira Shioda
明 潮田
Hiroshi Hirano
平野 弘
Itaru Shibata
格 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9915884A priority Critical patent/JPS60243295A/en
Publication of JPS60243295A publication Critical patent/JPS60243295A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the titled stamper for reproducing a storage disk, etc. wherein rugged patterns are faithfully reproduced by using a carrier substrate as an electrically conductive material, and making a pattern forming resist electrically conductive. CONSTITUTION:A film of Te-Ge-Sn, etc. is coated on an electrically conductive substrate 10 of As2Se3-As2Te3 glass, etc. to form an electrically conductive resist 11. An Ar laser beam 17, etc. is irradiated onto the substrate 10 coated with the resist 17 to write a disk pattern. Then sputter-etching is carried out in an atmosphere of gaseous CF4 with a CVD device, etc., and development is conducted to form a resist rugged pattern 13. The whole of the substrate 10 after development of the pattern 13 is immersed in an electrolytic cell to coat an electrodeposited layer 15. Then the Ni-electrodeposited layer 15 part is released to complete a stamper. The defects on the surface of the stamper can be completely eliminated by this method, and the stamper capable of forming a minute optical disk can be obtained.

Description

【発明の詳細な説明】 +8)産業上の利用分野 本発明は光情報の記憶ディスク、あるいは光制御用凹凸
パターン形成のディスクを複製するさいの電鋳型(El
ectroformed mold)所謂スタンパの製
造方法に関する。
Detailed Description of the Invention +8) Industrial Application Field The present invention relates to electroforming molds (El
The present invention relates to a method for manufacturing a so-called stamper (electroformed mold).

係る光ディスクの複製は通常、プレス装置に装着された
円盤状スタンパを用いてスタンパ表面に形成された凹凸
パターン(逆型パターン)を高分子粉脂体に加圧成型し
て行われる。第2図(a)〜(C)の各図は光ディスク
、複製の要部プロセスを説明するスタンパの部分的断面
図である。
Replication of such optical discs is usually carried out by using a disk-shaped stamper attached to a press device to pressure mold a concavo-convex pattern (reverse pattern) formed on the surface of the stamper onto a polymer powder. Each of FIGS. 2(a) to 2(C) is a partial cross-sectional view of an optical disc and a stamper for explaining the main process of duplication.

断面図中、(a)はプレス加圧のパンチ側治具1装着の
スタンパ2と、又ダイ側治具3に挿入されたスタンパの
パターンを忠実に転写させる例えばアクリル系樹脂等の
成型用樹脂4とを夫々配置する加圧成型前の状態である
In the cross-sectional view, (a) shows the stamper 2 attached to the punch-side jig 1 for press pressure, and the molding resin such as acrylic resin that faithfully transfers the pattern of the stamper inserted into the die-side jig 3. This is the state before pressure molding where 4 and 4 are arranged respectively.

同(b)図、は(a)図に続く加圧成型時の状態図、及
び同図(C)はプレス加圧による転写完了になる複製さ
れたスタンパ成型体5の断面図である。スタンパ成型体
5.即ち、光ディスクのディスク面にはトラックピッチ
p=1.6μm程度のミクロンオーダの多数のトラック
7(溝の高さは0.1μl11)が転写形成される。
Figures (B) and (C) of the same figure are diagrams showing the state of pressure molding following Figure (a), and Figure (C) is a cross-sectional view of the replicated stamper molded body 5 after the transfer is completed by press pressure. Stamper molded body 5. That is, a large number of micron-order tracks 7 (groove height 0.1 μl11) with a track pitch p of about 1.6 μm are transferred and formed on the disk surface of the optical disc.

第3図はスタンパによるディスク径30cm、又トラッ
ク溝数は致方を具備する多数の同心円状トランク溝7が
転写形成された光ディスク成形体6全体の正面図である
FIG. 3 is a front view of the entire optical disk molded body 6 on which a large number of concentric trunk grooves 7 with a disk diameter of 30 cm and a number of track grooves are formed by transfer by a stamper.

斯様なスタンパの製作には、スタンパの凹凸パターンを
忠実に再現することが要求される。
To manufacture such a stamper, it is required to faithfully reproduce the uneven pattern of the stamper.

(b)従来の技術 前記微細な凹凸パターン形成のスタンパ2の製造方法を
第4図+a)〜(f)プロセス図(各図は型の一部断面
図である)に従って説明する。
(b) Prior Art A method of manufacturing the stamper 2 with the fine concavo-convex pattern described above will be explained with reference to FIGS.

同図ta+は平坦性の優れたガラス基板10の表面にス
ピンコード法により均一膜厚さの紫外線露光用レジスト
が塗着された図である。
ta+ in the figure is a diagram in which a resist for ultraviolet exposure having a uniform film thickness is coated on the surface of a glass substrate 10 having excellent flatness by a spin code method.

同図(ト))はレジスト塗着基板に対して微細パターン
形成、の紫外線照射12がされる図、又同図(C)は。
The same figure (G) is a figure in which ultraviolet rays are irradiated 12 to form a fine pattern on a resist-coated substrate, and the same figure (C) is a figure.

前記照射12露光後の現像処理により凹凸パターン13
が形成された基板である。
A concavo-convex pattern 13 is formed by the development process after the exposure to the irradiation 12.
This is a substrate on which is formed.

同図(d)は、パターン13形成の(C1図基板の凹凸
面(1@離面)を真空蒸着法によりNi膜14の被着に
より爾後行う鍍金用電極が成形された図、更に、同図(
e)は(d)基板体を陰極とし電気分解による鍍金手段
でNi電極面14に対して例えばニッケル(Ni)電着
層15が略300μm被着された図である。
The same figure (d) is a figure in which the pattern 13 is formed (Fig. C1) on the uneven surface (1@remote surface) of the substrate by vacuum evaporation to form an electrode for plating, which is to be performed later by depositing a Ni film 14. figure(
(e) is a diagram in which, for example, a nickel (Ni) electrodeposition layer 15 of about 300 μm is deposited on the Ni electrode surface 14 by electrolytic plating using the substrate (d) as a cathode.

同図(f)は、(e)囲碁板体から凹凸パターン形成基
板16((C1図参照)が剥離されたトランクピッチp
とする第2図で説明したスタンパ2が形成された図であ
る。
(f) of the same figure shows (e) the trunk pitch p after the concavo-convex pattern-formed substrate 16 (see figure C1) has been peeled off from the Go board.
FIG. 2 is a diagram showing the stamper 2 described in FIG. 2 formed thereon.

(C)発明が解決しようとする問題点 前記従来のスタンパ2は、絶縁性基板、及び絶縁性を有
する一般のフォトレジストを用いたことから、鍍金用電
極成形時の前記鍍金膜14に欠陥を生じやすく、どのた
め第4図ff11図状態から(f1図漱態とするスタン
パ取り出しの剥離に際し、膜14がめくれや或いははが
れを起こし該スタンパ成形上不都合がある。
(C) Problems to be Solved by the Invention Since the conventional stamper 2 uses an insulating substrate and a general insulating photoresist, defects may occur in the plating film 14 during formation of the plating electrode. Therefore, when the stamper is removed from the state shown in FIG. 4FF11 (FIG. 4FF11) (FIG.

(d1問題点を解決するための手段 光ディスクを複製する微細な凹凸パターン形成のための
スタンパの製造に於ける前記問題点は。
(Means for solving the d1 problem) The above-mentioned problem in manufacturing a stamper for forming a fine concavo-convex pattern for duplicating an optical disk is as follows.

導電性の担体基板並びに該基板に被着するパターン形成
レジストを導電性レジストとする本発明による製造法に
より解決される。
The problem is solved by the production method according to the invention, in which the conductive carrier substrate and the patterned resist applied to the substrate are conductive resists.

導電性基板lOとしては、硫黄S、セレンSe、テルル
Teの■属元素を含む酸化金属からなるガラス化領域内
で半導体性をしめず低抵抗のカルコゲンガラス基板か、
も、シフは同等の半導体薄膜即ち。
The conductive substrate 10 may be a chalcogen glass substrate that does not exhibit semiconducting properties and has low resistance within the vitrified region made of metal oxide containing group II elements such as sulfur S, selenium Se, and tellurium Te;
Also, Schiff is an equivalent semiconductor thin film, ie.

導電性カルコゲンガラス膜を被着させた担体基板とする
ことも有効である。
It is also effective to use a carrier substrate coated with a conductive chalcogen glass film.

(e)作用 本発明によれば、前記電極鍍金膜14を介することなく
レジスト塗着基板に対し直接、二・ノケル電着層(電鋳
層15)が出来るため従来生起した如きスタンパ表面の
欠陥が皆無となる。 −、(f)実施例 以下3本発明の一実施例を第1図(a)〜(e)のスタ
ンパ製造プロセス図、に従って詳細に説明する。
(e) Function According to the present invention, since the 2-Nokel electrodeposition layer (electroformed layer 15) is formed directly on the resist-coated substrate without going through the electrode plating film 14, defects on the stamper surface that occur conventionally can be avoided. will be completely eliminated. -, (f) Example The following three examples of the present invention will be described in detail with reference to the stamper manufacturing process diagrams shown in FIGS. 1(a) to (e).

第1図(a)に示すように、レジスト膜被着の担体基板
としてAs2 Se3− AS2 Te3系ガラ−スの
導電性基板10′を用い、該基板上に膜着されるレジス
ト11’は導電性レジストと、して2例えば■属半導体
元素テルルTe、ゲルマニュームGeと錫Snの組成に
なる厚さ700人程度の膜を真空蒸着法により被着させ
る。
As shown in FIG. 1(a), a conductive substrate 10' made of As2Se3-AS2Te3 glass is used as a carrier substrate on which a resist film is deposited, and a resist 11' deposited on the substrate is conductive. A film having a thickness of about 700 mm and having a composition of two semiconductor elements, for example, tellurium (Te), germanium (Ge), and tin (Sn), is deposited by vacuum evaporation.

同図(blに示すように前記レジスト11′膜被着基板
に対して+ 5m−のアルゴン(Ar)レーザ光の照射
17によりディスクパターンを書込み、これに続いて同
図(C)に示すように5例えばCVD装置等により四弗
化炭素(CF4 )ガス雰囲気中、スパッタエツチング
手段でレジスト凹凸パターン13形成の現像を行う。
As shown in the same figure (bl), a disk pattern is written on the resist 11' film-covered substrate by irradiation 17 with +5 m- argon (Ar) laser light, and then as shown in the same figure (C). Step 5: For example, the uneven resist pattern 13 is developed using sputter etching means in a carbon tetrafluoride (CF4) gas atmosphere using a CVD device or the like.

更に同図(dlには前記パターン現像後の基板全体を電
解槽に浸漬して該基板を陰極としてNi電着層15を略
300μm被着した状態である。
Furthermore, in the same figure (dl), the entire substrate after the pattern development is immersed in an electrolytic bath, and a Ni electrodeposition layer 15 of about 300 μm is deposited using the substrate as a cathode.

第1図(elは厚さ300μmのニッケル鍍金部分を剥
離してスタンパが完成した図である。
FIG. 1 (el is a diagram in which the stamper is completed by peeling off the 300 μm thick nickel plating part.

、 斯様な本発明実施例によるスタンパの製作方法は、
従来問題とされた電極鍍金膜14を介することなく直接
、ニッケル鍍金がされる為、スタンパ面の欠陥密度を従
来より二相減少させることが出来た。
, The method for manufacturing a stamper according to the embodiment of the present invention is as follows:
Since nickel plating is performed directly without intervening the electrode plating film 14, which has been a problem in the past, the defect density on the stamper surface can be reduced by two phases compared to the past.

(栢発明の効果 以上、詳細に説明した様に本発明スタンパの製遣方法に
よれば、鍍金用電極膜14(第4図参照)の剥がれ等に
よるスタンパ表面の欠陥が皆無となり、精細な光デイス
ク成形用スタンパが形成される利点がある。
(Effects of the Invention As explained in detail above, according to the method for manufacturing the stamper of the present invention, there are no defects on the stamper surface due to peeling of the plating electrode film 14 (see Fig. 4), and fine light is produced. There is an advantage that a stamper for forming a disk is formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例とするスタンパ製造方法を説明
するプロセス断面図。 第2図は光デイスク成形の要部プロセスを示す断面図で
ある。 第3図は光ディスクの正面図である。 第4図は従来のスタンパ製造方法を示すプロセス断面図
である。 図中、2はスタンパ、4は成形用樹脂。 6は複製の光デイスク成型体。 7はトラック、10.10’は担体基板。 ILII’はレジスト層。 13は凹凸パターン。 15はニッケル鍍金層よりなるスタンパ17はアルゴン
レーザ光 である。 第11珂 第3図 革4図
FIG. 1 is a process sectional view illustrating a stamper manufacturing method according to an embodiment of the present invention. FIG. 2 is a sectional view showing the main process of optical disk molding. FIG. 3 is a front view of the optical disc. FIG. 4 is a process sectional view showing a conventional stamper manufacturing method. In the figure, 2 is a stamper and 4 is a molding resin. 6 is a replica optical disk molded body. 7 is a track, 10.10' is a carrier substrate. ILII' is a resist layer. 13 is an uneven pattern. A stamper 17 made of a nickel plating layer 15 is an argon laser beam. Figure 11, Figure 3, Leather Figure 4

Claims (1)

【特許請求の範囲】 (11逆型の凹凸パターンを形成したフォトレジスト被
着の担体基板表面を電気鍍金して電鋳型を製作するに際
し、導電性の月俸基板並びに該基板に被着するレジスト
を導電性レジストとすることを特徴とするスタンパの製
造方法。 (2)前記導電性レジストとしてTe−Ge−5n組成
の蒸着膜を用いたことを特徴とする特許請求の範囲第1
項記載のスタンパの製造方法。 (3)前記担体基板としてカルコゲンガラスを使用した
ことを特徴とする特許請求の範囲第1項記載のスタンパ
の製造方法。
[Claims] (11) When producing an electroforming mold by electroplating the surface of a carrier substrate coated with a photoresist on which an inverted uneven pattern is formed, a conductive monthly salary substrate and a resist coated on the substrate are used. A method for manufacturing a stamper, characterized in that the conductive resist is used. (2) A vapor deposited film having a Te-Ge-5n composition is used as the conductive resist.
Method for manufacturing the stamper described in Section 1. (3) The method for manufacturing a stamper according to claim 1, wherein chalcogen glass is used as the carrier substrate.
JP9915884A 1984-05-17 1984-05-17 Manufacture of stamper Pending JPS60243295A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9915884A JPS60243295A (en) 1984-05-17 1984-05-17 Manufacture of stamper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9915884A JPS60243295A (en) 1984-05-17 1984-05-17 Manufacture of stamper

Publications (1)

Publication Number Publication Date
JPS60243295A true JPS60243295A (en) 1985-12-03

Family

ID=14239860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9915884A Pending JPS60243295A (en) 1984-05-17 1984-05-17 Manufacture of stamper

Country Status (1)

Country Link
JP (1) JPS60243295A (en)

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